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    • 99. 发明授权
    • Write-once magentic junction memory array
    • 一次写入磁存储器阵列
    • US08659852B2
    • 2014-02-25
    • US12106363
    • 2008-04-21
    • Haiwen XiSong S. Xue
    • Haiwen XiSong S. Xue
    • G11B5/33
    • G11C11/1675G11C11/161G11C11/1673
    • A magnetic junction memory array and methods of using the same are described. The magnetic junction memory array includes a plurality of electrically conductive word lines extending in a first direction, a plurality of electrically conductive bit lines extending in a second direction and forming a cross-point array with the plurality of electrically conductive word lines, and a memory cell proximate to, at least selected, cross-points forming a magnetic junction memory array. Each memory cell includes a magnetic pinned layer electrically between a magnetic bit and an isolation transistor. The isolation transistor has a current source and a gate. The current source is electrically coupled to the cross-point bit line and the gate is electrically coupled to the cross-point word line. An electrically conductive cover layer is disposed on and in electrical communication with the magnetic bits.
    • 描述了磁结存储器阵列及其使用方法。 磁结存储器阵列包括沿第一方向延伸的多个导电字线,沿第二方向延伸的多个导电位线,并与多个导电字线形成交叉点阵列,以及存储器 靠近,至少选择的形成磁结存储器阵列的交叉点的单元。 每个存储单元包括在磁性位和隔离晶体管之间电气的磁性固定层。 隔离晶体管具有电流源和栅极。 电流源电耦合到交叉点位线,并且栅极电耦合到交叉点字线。 导电覆盖层设置在与磁头电气连接的位置上。