专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明授权

US07918485B2 Security system using conductive and non-conductive regions 有权
标题翻译：使用导电和非导电区域的安全系统
公开(公告)号：US07918485B2
公开(公告)日：2011-04-05
申请号：US11563989
申请日：2006-11-28
申请人： Gabriel Iftime , Yiliang Wu , Paul F. Smith , Peter M. Kazmaier , Beng S. Ong
发明人： Gabriel Iftime , Yiliang Wu , Paul F. Smith , Peter M. Kazmaier , Beng S. Ong
IPC分类号： B42D15/00 , B42D1/00 , B42D15/10
CPC分类号： B41J29/393 , G06K19/067 , Y10S283/901
摘要： Disclosed is an item, for example a document, including a substrate having thereon a multiplicity of separate printed markings, wherein the printed markings include both conductive printed markings and substantially non-conductive printed markings. The different conductive and substantially non-conductive regions on the substrate can be detected, for example by measuring the resistance or current of each printed marking. The pattern of different conductive and substantially non-conductive regions can be used as a security pattern of authenticity that cannot be replicated by standard office equipment, and/or can be used to encrypt information in binary code form in the item. A system for forming and detecting the different printed markings is also described.
摘要翻译：公开了一种物品，例如文件，包括其上具有多个分开的印刷标记的基板，其中印刷的标记包括导电印刷标记和基本不导电的印刷标记。可以例如通过测量每个印刷标记的电阻或电流来检测衬底上不同的导电和基本不导电的区域。可以将不同的导电和基本上不导电的区域的图案用作标准办公设备不能复制的真实性的安全模式，和/或可用于加密该项目中二进制代码形式的信息。还描述了用于形成和检测不同印刷标记的系统。

92. 发明授权

US07790498B2 Process using a broken gelled composition 有权
标题翻译：使用破碎的凝胶组合物的方法
公开(公告)号：US07790498B2
公开(公告)日：2010-09-07
申请号：US11406619
申请日：2006-04-19
申请人： Yiliang Wu , Beng S. Ong
发明人： Yiliang Wu , Beng S. Ong
IPC分类号： H01L51/40
CPC分类号： H01L51/0545 , H01L51/0036 , H01L51/0541 , H01L51/0558
摘要： A process including: (a) providing a gelable composition comprising a gelable semiconductor polymer and a liquid, wherein the polymer is at a low concentration in the liquid; (b) gelling the gelable composition to result in a gelled composition; (c) breaking the gelled composition to result in a flowable, broken gelled composition, wherein the viscosity of the flowable, broken gelled composition is at least about 10 times greater than the viscosity of the liquid; and (d) liquid depositing the flowable, broken gelled composition.
摘要翻译：一种方法，包括：（a）提供包含可凝胶化半导体聚合物和液体的可胶凝组合物，其中聚合物在液体中的浓度低; （b）凝胶化组合物凝胶化以产生胶凝组合物; （c）打破凝胶组合物以产生可流动的破碎的凝胶组合物，其中可流动的破碎的凝胶组合物的粘度比液体的粘度至少大约10倍; 和（d）液体沉积可流动的破碎的凝胶组合物。

93. 发明授权

US07652339B2 Ambipolar transistor design 有权
标题翻译：双极晶体管设计
公开(公告)号：US07652339B2
公开(公告)日：2010-01-26
申请号：US11697604
申请日：2007-04-06
申请人： Yiliang Wu , Beng S. Ong , Alphonsus Hon-Chung Ng
发明人： Yiliang Wu , Beng S. Ong , Alphonsus Hon-Chung Ng
IPC分类号： H01L29/73 , H01L29/735 , H01L23/31
CPC分类号： H01L51/0504 , H01L51/0068 , H01L51/0545 , H01L51/0562
摘要： An ambipolar transistor, including a p-type semiconductor region and an n-type semiconductor region near the p-type semiconductor region. Also a first terminal and second terminal contact both the p-type semiconductor region and the n-type semiconductor region. Furthermore, the p-type semiconductor region and the n-type semiconductor region substantially do not overlap each other. A method of manufacturing an ambipolar transistor is also disclosed, including forming a p-type semiconductor region, forming an n-type semiconductor region near the p-type semiconductor region, forming a first terminal contacting both the p-type semiconductor region and n-type semiconductor region, forming a second terminal contacting both the p-type semiconductor region and n-type semiconductor region; and wherein the p-type semiconductor region and the n-type semiconductor region substantially do not overlap, and have substantially no interfacial area.
摘要翻译：一种双极晶体管，包括p型半导体区域和p型半导体区域附近的n型半导体区域。第一端子和第二端子也接触p型半导体区域和n型半导体区域。此外，p型半导体区域和n型半导体区域基本上彼此不重叠。还公开了制造双极晶体管的方法，包括形成p型半导体区域，在p型半导体区域附近形成n型半导体区域，形成与p型半导体区域和n型半导体区域接触的第一端子，形成与p型半导体区域和n型半导体区域接触的第二端子; 并且其中p型半导体区域和n型半导体区域基本上不重叠，并且基本上没有界面面积。

94. 发明申请

US20090179194A1 ORGANIC THIN FILM TRANSISTORS 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US20090179194A1
公开(公告)日：2009-07-16
申请号：US12014884
申请日：2008-01-16
申请人： Yiliang Wu , Beng S. Ong
发明人： Yiliang Wu , Beng S. Ong
IPC分类号： H01L51/05 , H01L21/31
CPC分类号： H01L51/0529 , H01L21/02126 , H01L21/02211 , H01L21/02282 , H01L21/3122 , H01L51/0036 , H01L51/052 , H01L51/0537 , H01L51/0541 , H01L51/0545
摘要： An organic thin film transistor has a gate dielectric layer which is formed from a block copolymer. The block copolymer comprises a polar block and a nonpolar block. The resulting dielectric layer has good adhesion to the gate electrode and good compatibility with the semiconducting layer.
摘要翻译：有机薄膜晶体管具有由嵌段共聚物形成的栅极电介质层。嵌段共聚物包括极性嵌段和非极性嵌段。所得的电介质层对栅电极具有良好的粘合性，并且与半导体层具有良好的相容性。

95. 发明授权

US07397086B2 Top-gate thin-film transistor 有权
标题翻译：顶栅薄膜晶体管
公开(公告)号：US07397086B2
公开(公告)日：2008-07-08
申请号：US11317168
申请日：2005-12-23
申请人： Yiliang Wu , Beng S. Ong , Paul F. Smith
发明人： Yiliang Wu , Beng S. Ong , Paul F. Smith
IPC分类号： H01L29/76
CPC分类号： H01L51/0541 , B82Y10/00 , B82Y30/00 , H01L51/0036 , H01L51/052 , H01L51/0558 , H01L51/107
摘要： A thin-film transistor, such as a top-gate thin-film transistor, is provided herein. The thin-film transistor has a performance-enhancing layer, such as a performance-enhancing bottom layer, comprising a polymer other than a polyimide. In specific embodiments, the polymer is selected from the group consisting of polysiloxane, polysilsesquioxane, and mixtures thereof. In other embodiments, it is a self-assembling polymeric monolayer of a silane agent and an organophosphonic acid. The performance-enhancing layer directly contacts the substrate. The layer improves the carrier mobility and current on/off ratio of the thin film transistor.
摘要翻译：本文提供了诸如顶栅薄膜晶体管的薄膜晶体管。薄膜晶体管具有性能增强层，例如性能增强底层，其包含聚酰亚胺以外的聚合物。在具体实施方案中，聚合物选自聚硅氧烷，聚倍半硅氧烷及其混合物。在其它实施方案中，它是硅烷试剂和有机膦酸的自组装聚合物单层。性能增强层直接接触基板。该层改善了薄膜晶体管的载流子迁移率和电流开/关比。

96. 发明申请

US20070287221A1 Fabrication process for crystalline zinc oxide semiconductor layer 审中-公开
标题翻译：结晶氧化锌半导体层的制造工艺
公开(公告)号：US20070287221A1
公开(公告)日：2007-12-13
申请号：US11450998
申请日：2006-06-12
申请人： Beng S. Ong , Yuning Li , Yiliang Wu
发明人： Beng S. Ong , Yuning Li , Yiliang Wu
IPC分类号： H01L21/16 , H01L21/00
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02628 , H01L29/045
摘要： A process for fabricating at least one semiconductor layer of a thin film transistor composed of: liquid depositing one or more zinc oxide-precursor compositions and forming the at least one semiconductor layer of the thin film transistor including crystalline zinc oxide preferentially oriented with the c-axis perpendicular to the plane of the at least one semiconductor layer from the liquid deposited one or more zinc oxide-precursor compositions.
摘要翻译：一种用于制造薄膜晶体管的至少一个半导体层的工艺，所述半导体层由以下部分组成：液体沉积一种或多种氧化锌 - 前体组合物，并形成所述薄膜晶体管的至少一个半导体层，所述半导体层包括优先用c- 垂直于所述至少一个半导体层的平面从垂直于沉积的一种或多种氧化锌 - 前体组合物的液体的轴。

97. 发明授权

US07105375B2 Reverse printing 有权
标题翻译：反向打印
公开(公告)号：US07105375B2
公开(公告)日：2006-09-12
申请号：US10909081
申请日：2004-07-30
申请人： Yiliang Wu , Nan-Xing Hu , Beng S. Ong
发明人： Yiliang Wu , Nan-Xing Hu , Beng S. Ong
IPC分类号： H01L51/40 , H01L21/336 , H01L21/8234
CPC分类号： H01L27/283 , H01L51/0019 , H01L51/0036 , H01L51/0052
摘要： A method of patterning organic semiconductor layers of electronic devices utilizing reverse printing.
摘要翻译：利用反向印刷图案化电子器件的有机半导体层的方法。

98. 发明授权

US06861664B2 Device with n-type semiconductor 有权
标题翻译： n型半导体器件
公开(公告)号：US06861664B2
公开(公告)日：2005-03-01
申请号：US10627860
申请日：2003-07-25
申请人： Beng S. Ong , Dasarao K. Murti , James M. Duff , Yiliang Wu
发明人： Beng S. Ong , Dasarao K. Murti , James M. Duff , Yiliang Wu
IPC分类号： H01L51/05 , H01L29/786 , H01L51/30 , H01L51/00
CPC分类号： H01L51/0053 , H01L51/0044 , H01L51/0072 , H01L51/0545
摘要： An electronic device includes a semiconductor layer in contact with a number of electrodes, wherein the semiconductive layer includes a compound wherein either or both of the following geometric isomers of the compound are present: wherein: n is 1, 2 or 3 for the polycyclic moiety; and R1 and R2 are independently selected from the group consisting of a hydrocarbon ring and a heterocyclic group, wherein R1 and R2 are the same or different hydrocarbon ring, the same or different heterocyclic group, or one of R1 and R2 is the hydrocarbon ring and the other the heterocyclic group.
摘要翻译：电子器件包括与多个电极接触的半导体层，其中半导体层包括其中存在化合物的以下几何异构体之一或两者的化合物：其中：对于多环部分，n为1,2或3 ; R 1和R 2独立地选自烃环和杂环基，其中R 1和R 2是相同或不同的烃环，相同或不同的杂环基，或者R 1和R 2中的一个是烃环和其他杂环基。

99. 发明授权

US07923718B2 Organic thin film transistor with dual layer electrodes 有权
标题翻译：具有双层电极的有机薄膜晶体管
公开(公告)号：US07923718B2
公开(公告)日：2011-04-12
申请号：US11564438
申请日：2006-11-29
申请人： Yiliang Wu , Beng S. Ong
发明人： Yiliang Wu , Beng S. Ong
IPC分类号： H01L29/08
CPC分类号： H01L51/105 , H01L51/0037 , H01L51/0525 , H01L51/0541 , H01L51/0545
摘要： A thin-film transistor (TFT) with dual-layer source and drain electrodes is provided. Each source and drain electrode comprises a first layer and a second layer. The first layer has a work function which differs from the energy level of the semiconductor by at least 0.5 eV and the second layer has a work function matching the energy level of the semiconductor. The semiconductor has a short channel length.
摘要翻译：提供了具有双层源极和漏极的薄膜晶体管（TFT）。每个源极和漏极包括第一层和第二层。第一层具有与半导体的能级不同至少0.5eV的功函数，第二层具有与半导体的能级匹配的功函数。半导体具有短的沟道长度。

100. 发明申请

US20090234056A1 PHASE-SEPARATED DIELECTRIC STRUCTURE FABRICATION PROCESS 有权
标题翻译：相分离电介质结构工艺
公开(公告)号：US20090234056A1
公开(公告)日：2009-09-17
申请号：US12436975
申请日：2009-05-07
申请人： Yiliang Wu , Hadi K. Mahabadi , Beng S. Ong , Paul F. Smith
发明人： Yiliang Wu , Hadi K. Mahabadi , Beng S. Ong , Paul F. Smith
IPC分类号： C08K5/06 , C08K5/05
CPC分类号： H01L51/052 , H01L51/0003 , H01L51/0036 , H01L51/0537 , H01L51/0541 , H01L51/0545
摘要： A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.
摘要翻译：一种制造电子器件的方法，包括：沉积包含半导体的层; 液体沉积包含低k电介质材料，较高k电介质材料和液体的电介质组合物，其中低k电介质材料和较高k电介质材料在液体沉积之前不相分离; 并引起下部k电介质材料和较高k电介质材料的相分离以形成相分离电介质结构，其中低k电介质材料的浓度高于绝缘结构最靠近包含半导体的层，其中沉积包含半导体的层在液体沉积电介质组合物之前或之后引起相分离。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式