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    • 95. 发明授权
    • Spark plug and manufacturing method thereof
    • 火花塞及其制造方法
    • US08492964B2
    • 2013-07-23
    • US13158094
    • 2011-06-10
    • Mai NakamuraAkira Suzuki
    • Mai NakamuraAkira Suzuki
    • H01T13/20H01T13/00
    • H01T13/06H01T21/02
    • A spark plug including a center electrode; an insulator; and a metal shell, the metal shell including: a tool engaging section; a body section; and a groove section formed between the tool engaging section and the body section, and having bulges which bulge in an outer peripheral direction and in an inner peripheral direction. When a portion of the groove section having a largest outer diameter is a first section, a thinnest portion from the first section to the body section is a second section, and a portion having a thickness that is the same as that of the first section is a third section, a relation between a thickness A of the second section and a radius of curvature R of an outer surface of the metal shell that continues from the second section to the third section satisfies R×A≧0.20 mm2.
    • 一种包括中心电极的火花塞; 绝缘体 和金属壳,所述金属壳包括:工具接合部; 身体部位 以及形成在工具接合部和主体部之间的槽部,并且具有在外周方向和内周方向上凸出的凸出部。 当具有最大外径的槽部的一部分是第一部分时,从第一部分到主体部分的最薄部分是第二部分,并且具有与第一部分相同的厚度的部分是 第三部分,第二部分的厚度A和从第二部分延续到第三部分的金属壳体的外表面的曲率半径R之间的关系满足R×A> = 0.20mm2。
    • 97. 发明授权
    • Mesa semiconductor device and method of manufacturing the same
    • 梅萨半导体器件及其制造方法
    • US08362595B2
    • 2013-01-29
    • US12338686
    • 2008-12-18
    • Akira SuzukiKatsuyuki SekiKeita Odajima
    • Akira SuzukiKatsuyuki SekiKeita Odajima
    • H01L29/06H01L27/082H01L27/102H01L29/70H01L31/11
    • H01L29/8613H01L2924/0002H01L2924/00
    • The invention provides a mesa semiconductor device and a method of manufacturing the same which minimize the manufacturing cost and prevents contamination and physical damage of the device. An N− type semiconductor layer is formed on a front surface of a semiconductor substrate, and a P type semiconductor layer is formed thereon. An anode electrode is further formed on the P type semiconductor layer so as to be connected to the P type semiconductor layer, and a mesa groove is formed from the front surface of the P type semiconductor layer deeper than the N− type semiconductor layer so as to surround the anode electrode. Then, a second insulation film is formed from inside the mesa groove onto the end portion of the anode electrode. The second insulation film is made of an organic insulator such as polyimide type resin or the like. The lamination body made of the semiconductor substrate and the layers laminated thereon is then diced along a scribe line.
    • 本发明提供一种台面半导体器件及其制造方法,其使制造成本最小化并防止器件的污染和物理损坏。 在半导体衬底的前表面上形成N-型半导体层,并在其上形成P型半导体层。 在P型半导体层上进一步形成阳极,以连接到P型半导体层,并且从比N型半导体层更深的P型半导体层的前表面形成台面槽,以便 以包围阳极电极。 然后,从台面槽的内侧形成第二绝缘膜至阳极电极的端部。 第二绝缘膜由聚酰亚胺树脂等有机绝缘体构成。 然后将由半导体衬底制成的层压体和层压在其上的层沿划线切割。
    • 99. 发明授权
    • Mesa type semiconductor device and manufacturing method thereof
    • Mesa型半导体器件及其制造方法
    • US08319317B2
    • 2012-11-27
    • US12481292
    • 2009-06-09
    • Katsuyuki SekiNaofumi TsuchiyaAkira SuzukiKikuo Okada
    • Katsuyuki SekiNaofumi TsuchiyaAkira SuzukiKikuo Okada
    • H01L23/58
    • H01L21/8222H01L21/02118H01L21/312H01L21/31662H01L27/0814H01L2924/10155
    • Problems with a conventional mesa type semiconductor device, which are deterioration in a withstand voltage and occurrence of a leakage current caused by reduced thickness of an insulation film on an inner wall of a mesa groove corresponding to a PN junction, are solved using an inexpensive material, and a mesa type semiconductor device of high withstand voltage and high reliability is offered together with its manufacturing method. A stable protection film made of a thermal oxide film is formed on the inner wall of the mesa groove in the mesa type semiconductor device to cover and protect the PN junction, and an insulation film having negative electric charges is formed to fill a space in the mesa groove covered with the thermal oxide film so that an electron accumulation layer is not easily formed at an interface between an N− type semiconductor layer and the thermal oxide film. With the structure described above, an influence of the positive electric charges in the thermal oxide film is weakened and an extension of a depletion layer into the N− type semiconductor layer at the interface with the thermal oxide film is secured.
    • 使用便宜的材料来解决传统的台面型半导体器件的问题,其中耐腐蚀性劣化和由与PN结相对应的台面凹槽的内壁上的绝缘膜的厚度减小引起的漏电流的发生 并且提供具有高耐压和高可靠性的台面型半导体器件及其制造方法。 在台面型半导体器件的台面槽的内壁上形成由热氧化膜制成的稳定的保护膜,以覆盖和保护PN结,形成具有负电荷的绝缘膜以填充 用热氧化膜覆盖的台面槽,使得在N-型半导体层和热氧化膜之间的界面处不容易形成电子蓄积层。 利用上述结构,确保了热氧化膜中的正电荷的影响,确保了与热氧化膜的界面处的耗尽层向N型半导体层的延伸。
    • 100. 发明授权
    • Biopsy tissue sampling treatment instrument
    • 活检组织取样治疗仪
    • US08241227B2
    • 2012-08-14
    • US12845262
    • 2010-07-28
    • Junichi OhnishiMasatoshi TonomuraAkira Suzuki
    • Junichi OhnishiMasatoshi TonomuraAkira Suzuki
    • A61B10/00
    • A61B10/0266A61B2010/0216A61B2017/320008A61B2090/036
    • A biopsy tissue sampling treatment instrument includes a stem portion having a predetermined length sufficient to puncture living tissue; a puncturing portion formed at a distal end of the stem portion and having a protruding surface portion expanding rearward along a puncture direction of the stem portion; a tissue holding surface provided on a rear side of the protruding surface portion in the puncturing portion and having an area large enough to hold the living tissue; a stopper member provided at a rear end of the stem portion and having an abutting portion capable of abutting against the living tissue punctured by the stem portion; and an operating member provided on the stopper member and configured to hold the stem portion to the living tissue, allowing the stem portion to puncture the living tissue. Consequently, the biopsy tissue sampling treatment instrument increases holding capacity for the living tissue to be extracted, allows living tissue to be extracted in sufficient sampling quantities, and makes it easy to take samples of living tissue at an intended depth in tissue.
    • 活检组织取样处理器具包括具有足以刺穿活组织的预定长度的茎部; 穿刺部,形成在所述杆部的前端,具有沿所述杆部的穿刺方向向后方延伸的突出面部; 组织保持面,其设置在所述穿刺部的所述突出面部的后侧,并且具有足够大以容纳所述生物体组织的面积; 止挡构件,设置在所述杆部的后端,并且具有能够抵靠由所述杆部刺穿的所述生物体组件的抵接部; 以及操作构件,其设置在所述止动构件上并且构造成将所述杆部保持在所述生物体组织上,从而使所述杆部穿刺所述生物体组织。 因此,活检组织取样处理器具能够提高生物体组织的吸收能力,能够以足够的取样量提取生物体组织,容易地将组织中的生物体组织取样。