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91. 发明授权

US06555629B1 Method and device for continuous production of polymers 失效
标题翻译：用于连续生产聚合物的方法和装置
公开(公告)号：US06555629B1
公开(公告)日：2003-04-29
申请号：US09673156
申请日：2000-11-14
申请人： Detlev Pysall , Olaf Wachsen , Thomas Bayer , Stefan Wulf
发明人： Detlev Pysall , Olaf Wachsen , Thomas Bayer , Stefan Wulf
IPC分类号： C08F204
CPC分类号： B01F13/0059 , B01F5/0403 , B01F2005/0031 , B01F2015/062 , B01F2215/0049 , B01J19/0093 , B01J19/242 , B01J2219/00889 , B29K2105/0002
摘要： Process and apparatus for the continuous preparation of polymers Two reaction partners (starting materials) are stored in separate reservoirs 2, 3, 4 and 5 and are transported using overpressure via heated heat exchangers 11, 12 into a micromixer 18 by means of control and metering devices 6, 7, which can be metering pumps. In the heat exchangers 11, 12, the starting materials are heated, separately in each case, to the extent that during the mixing operation in the micromixer 18 the required reaction temperature is immediately reached. The polymerization takes place in a downstream tube reactor 20 which consists of tubes 21, 22, 23 which are connected in series.
摘要翻译：用于连续制备聚合物的方法和设备将两个反应物（起始物料）储存在分开的储存器2,3,4和5中，并通过加热的热交换器11,12通过超压将其通过控制和计量运送到微混合器18中装置6,7可以是计量泵。在热交换器11,12中，原料在各种情况下分别被加热到在微混合器18的混合操作期间立即达到所需的反应温度的程度。聚合发生在下游管式反应器20中，其由串联连接的管21,22,23组成。

92. 发明授权

US06432022B1 Low-play planetary gear mechanism 有权
标题翻译：低调行星齿轮机构
公开(公告)号：US06432022B1
公开(公告)日：2002-08-13
申请号：US09575079
申请日：2000-05-19
申请人： Thomas Bayer
发明人： Thomas Bayer
IPC分类号： F16H5704
CPC分类号： F16H57/0482 , Y10S475/901 , Y10T74/19977
摘要： A low-play planetary gear mechanism for high rotational speeds and low torque transmission and having roller bearings for the parts which rotate within the gear mechanism. The gear mechanism is designed for a long, maintenance-free service life in continuous operation at high drive speeds. To accomplish this, the running surfaces of at least some of the gears are coated with a coating that has a higher wear resistance and a lower coefficient of friction than the respectively associated base material. As such, all of the surfaces of the gear mechanism which come into contact with one another are able to run for long periods at the end of assembly of the gear mechanism. With this gear mechanism, there is no circulating lubricating oil originating from a lubricating-oil collection chamber and which flows freely around any of the moving parts of the gear mechanism.
摘要翻译：一种低转速行星齿轮机构，用于高转速和低转矩传动，并具有用于在齿轮机构内旋转的部件的滚子轴承。齿轮机构设计用于在高驱动速度下连续运行的长期，免维护的使用寿命。为了实现这一点，至少一些齿轮的运行表面涂覆有比相应的基材具有更高的耐磨性和较低的摩擦系数的涂层。因此，齿轮机构的彼此接触的所有表面能够在齿轮机构的组装结束时能够长时间运行。利用这种齿轮机构，不存在来自润滑油收集室的循环润滑油，并且能够绕齿轮机构的任何运动部件自由流动。

93. 发明授权

US06218264B1 Method of producing a calibration standard for 2-D and 3-D profilometry in the sub-nanometer range 失效
标题翻译：在亚纳米范围内制作2-D和3-D轮廓测量法的校准标准的方法
公开(公告)号：US06218264B1
公开(公告)日：2001-04-17
申请号：US09314410
申请日：1999-05-19
申请人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Martin Nonnenmacher , Helga Weiss
发明人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Martin Nonnenmacher , Helga Weiss
IPC分类号： H01L21311
CPC分类号： G01Q40/02 , Y10S438/975 , Y10S977/852 , Y10S977/878 , Y10T428/24926
摘要： A calibration standard comprises a supporting structure (1) of single crystal material with at least one pair of different kinds of structures consisting of a raised line (2) and a trench (3). These structures have the identical width in the range of about 500 nm. The single crystal material preferably is silicon with (110)-orientation. A method of producing the calibration standard comprises the steps: providing two polished wafers of the same single crystal material and with the same crystal orientation, forming an oxide layer on the polished surface of the first wafer, bonding the second wafer to the first oxidized wafer with the polished surfaces of the wafers facing each other, cutting the bonded structure transverse to the polished surfaces, selectively etching both the wafers to a defined depth to expose a portion of the oxide layer, masking the portions of the oxide layer now representing the raised line (2) and selectively etching the oxide layer in the unmasked areas to a defined depth to form the trench (3). The calibration standard overcomes the problem of measuring the diameter of an ultrafine tip for AFM/STM profilometry in the sub-nanometer range.
摘要翻译：校准标准包括具有由凸起线（2）和沟槽（3）组成的至少一对不同种类的结构的单晶材料的支撑结构（1）。这些结构具有在约500nm范围内相同的宽度。单晶材料优选为具有（110）取向的硅。一种生产校准标准的方法包括以下步骤：提供相同单晶材料的两个抛光晶片并具有相同的晶体取向，在第一晶片的抛光表面上形成氧化物层，将第二晶片接合到第一氧化晶片其中晶片的抛光表面彼此面对，切割与抛光表面横向的结合结构，选择性地将两个晶片刻蚀到限定的深度以暴露氧化物层的一部分，掩盖现在代表凸起的氧化物层的部分线（2），并且将未掩模区域中的氧化物层选择性蚀刻到限定的深度以形成沟槽（3）。校准标准克服了在亚纳米范围内测量AFM / STM轮廓测量法的超细尖端直径的问题。

94. 发明授权

US5382795A Ultrafine silicon tips for AFM/STM profilometry 失效
标题翻译：用于AFM / STM轮廓测定的超细硅胶头
公开(公告)号：US5382795A
公开(公告)日：1995-01-17
申请号：US209682
申请日：1994-03-10
申请人： Thomas Bayer , Johann Greschner , Yves Martin , Helga Weiss , Hemantha K. Wickramasinghe , Olaf Wolter
发明人： Thomas Bayer , Johann Greschner , Yves Martin , Helga Weiss , Hemantha K. Wickramasinghe , Olaf Wolter
IPC分类号： G01B7/34 , G01B21/30 , G01N27/00 , G01Q10/04 , G01Q60/04 , G01Q60/16 , G01Q60/38 , G01Q70/10 , H01J37/28 , H01L21/00 , H01L21/66
CPC分类号： G01Q60/38 , B82Y35/00 , G01Q60/04 , G01Q60/16 , G01Q70/10 , Y10S977/878
摘要： An ultrafine tip for AFM and STM profilometry of trenches having sidewalls. The tip includes a lateral circumferential edge protrusion to allow profilometry of the sidewalls of a trench located in a semiconductor or insulator substrate.
摘要翻译：具有侧壁的沟槽的AFM和STM轮廓测量法的超细尖端。尖端包括侧向周向边缘突起，以允许位于半导体或绝缘体衬底中的沟槽的侧壁的轮廓测量。

95. 发明授权

US5284754A Process for the continuous conversion of cephalosporin derivatives into glutaryl-7-aminocephalosporanic acid derivatives 失效
标题翻译：将头孢菌素衍生物连续转化为戊二酰-7-氨基头孢烷酸衍生物的方法
公开(公告)号：US5284754A
公开(公告)日：1994-02-08
申请号：US754000
申请日：1991-09-03
申请人： Thomas Bayer , Klaus Sauber
发明人： Thomas Bayer , Klaus Sauber
IPC分类号： C07D501/20 , C12N9/06 , C12N11/08 , C12N11/10 , C12P35/00 , C12P35/06
CPC分类号： C12N9/0024 , C12N11/08 , C12N11/10 , C12P35/06 , Y10S435/911
摘要： A process for the continuous conversion of cephalosporin derivatives into glutaryl-7-aminocephalosporanic acid derivativesA process for the continuous conversion of cephalosporin derivatives into the corresponding glutaryl-7-aminocephalosporanic acid derivatives in the presence of a catalyst containing D-amino-acid oxidase is described. The product yield can be increased, where appropriate, by addition of hydrogen peroxide.
摘要翻译：将头孢菌素衍生物连续转化为戊二酰-7-氨基头孢烷酸衍生物的方法在含有D-氨基酸氧化酶的催化剂存在下，将头孢菌素衍生物连续转化成相应的戊二酰-7-氨基头孢烷酸衍生物的方法是描述。通过加入过氧化氢可以适当地增加产物的产率。

96. 发明授权

US5051379A Method of producing micromechanical sensors for the AFM/STM profilometry and micromechanical AFM/STM sensor head 失效
标题翻译：用于AFM / STM轮廓测量和微机械AFM / STM传感器头的微机械传感器的生产方法
公开(公告)号：US5051379A
公开(公告)日：1991-09-24
申请号：US568306
申请日：1990-08-16
申请人： Thomas Bayer , Johann Greschner , Georg Kraus , Helga Weiss , Olaf Wolter
发明人： Thomas Bayer , Johann Greschner , Georg Kraus , Helga Weiss , Olaf Wolter
IPC分类号： G01B7/34 , B81C1/00 , C23F1/00 , G01N27/00 , G01Q60/16 , G01Q60/38 , G01Q70/02 , G02B21/00 , H01J37/28 , H01L21/302 , H01L41/09
CPC分类号： G01Q60/16 , B82Y35/00 , G01Q60/04 , G01Q60/38
摘要： A method and apparatus is described for a micromechanical sensor for the AFM/STM profilometry, which consist of a cantilever beam with a tip at its end and a mounting block at the opposite end. The method incorporated the steps of coating a wafer substrate; producing a mask for the desired cantilever beam pattern on the top side of the wafer; and a mask on the bottom side of the wafer; planarizing said cantilever beam pattern with photoresist; producing a mask for the desired tip in the area of the cantilever beam pattern producing the desired tip using an etching step, and simultaneously transferring the cantilever beam pattern from the upper to the lower part of the layer; and removing the supporting wafer material by etching through the bottom side mask. A mask for the desired cantilever beam pattern and the tip pattern contains all relevant information for a subsequent substrate etching process is described for etching step by step into a silicon substrate.

97. 发明授权

US4969415A PECVD (plasma enhanced chemical vapor deposition) method for depositing of tungsten or layers containing tungsten by in situ formation of tungsten fluorides 失效
公开(公告)号：US4969415A
公开(公告)日：1990-11-13
申请号：US458006
申请日：1989-12-28
申请人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Gerhard Schmid
发明人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Gerhard Schmid
IPC分类号： C23C16/08 , C23C16/30 , C23C16/448 , C23C16/50 , H01L21/28 , H01L21/285
CPC分类号： C23C16/4488 , C23C16/08 , H01L21/28556 , Y10S148/147
摘要： The apparatus comprises a plasma deposition chamber having a port through which a fluoro compound etch gas is introduced into the chamber and a port through which the chamber is evacuated, refractory metal cathode configuration within the chamber, an anode within the chamber, and energy impression means for ionizing the etch gas in the chamber, whereby the etch gas reacts with the refractory metal cathode configuration to convert the metal to gaseous refractory metal fluorides which decompose to form a deposited layer on a semiconductor substrate positioned on the anode.

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