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91. 发明授权

US08593124B2 Switching power source apparatus 失效
标题翻译：开关电源装置
公开(公告)号：US08593124B2
公开(公告)日：2013-11-26
申请号：US13209808
申请日：2011-08-15
申请人： Masaru Nakamura
发明人： Masaru Nakamura
IPC分类号： G05F1/00
CPC分类号： H02M3/1588 , H02M2001/0025 , Y02B70/1466
摘要： A switching power source apparatus includes a high-side MOSFET 11, a ramp generator 18 to generate a ramp signal, an amplitude signal generator (second feedback controller 2) to generate an amplitude signal Comp corresponding to an amplitude of the ramp signal, and a first feedback controller 1 to control the ON timing of the high-side MOSFET 11 according to the ramp signal, a feedback signal FB, and a first reference voltage REF and control the ON width of the high-side MOSFET 11 according to the amplitude signal Comp. The ramp generator 18 controls the inclination of the ramp signal so that the ramp signal maintains a predetermined amplitude. The first feedback controller 1 controls the ON width of the high-side MOSFET 11 so that the ON width does not become narrower than a predetermined limit value.
摘要翻译：开关电源装置包括高边MOSFET 11，产生斜坡信号的斜坡发生器18，振幅信号发生器（第二反馈控制器2），用于产生对应于斜坡信号振幅的幅度信号Comp，以及第一反馈控制器1根据斜坡信号，反馈信号FB和第一参考电压REF来控制高边MOSFET 11的导通定时，并根据振幅信号控制高边MOSFET 11的导通宽度比较斜坡发生器18控制斜坡信号的倾斜，使得斜坡信号保持预定的幅度。第一反馈控制器1控制高侧MOSFET 11的导通宽度，使得ON宽度不会比预定极限值变窄。

92. 发明申请

US20130275893A1 SCREEN CREATION SYSTEM FOR PROGRAMMABLE DISPLAY 审中-公开
标题翻译：可编程显示屏幕创建系统
公开(公告)号：US20130275893A1
公开(公告)日：2013-10-17
申请号：US13996794
申请日：2010-12-24
申请人： Yoshihisa Kawamura , Masaru Nakamura
发明人： Yoshihisa Kawamura , Masaru Nakamura
IPC分类号： G06F3/0481
CPC分类号： G06F3/0481 , G06F8/34
摘要： A screen creation system for creating a screen to be displayed at a graphical user interface of a programmable display includes: a registering unit that registers setting items that are set as a template regarding a configuration of a plurality of parts that makes the screen as elements that constitute the screen. When a new registration of the template is instructed regarding parts that are selected from the graphical user interface, the registering unit for registering the template is configured to: group and present setting items for each one of the selected parts based on properties thereof; and accept selection of the setting items to be included in the template.
摘要翻译：一种用于创建要在可编程显示器的图形用户界面处显示的屏幕的屏幕创建系统，包括：注册单元，其将设置为关于使屏幕的多个部件的配置设置为模板的设置项目作为元素，构成屏幕。当指示关于从图形用户界面选择的部件的模板的新注册时，用于登记模板的注册单元被配置为：基于其属性对所选择的部分中的每一个进行组合和呈现设置项; 并接受选择要包含在模板中的设置项目。

93. 发明申请

US20120043949A1 SWITCHING POWER SOURCE APPARATUS 失效
标题翻译：切换电源设备
公开(公告)号：US20120043949A1
公开(公告)日：2012-02-23
申请号：US13209808
申请日：2011-08-15
申请人： Masaru NAKAMURA
发明人： Masaru NAKAMURA
IPC分类号： G05F1/10
CPC分类号： H02M3/1588 , H02M2001/0025 , Y02B70/1466
摘要： A switching power source apparatus includes a high-side MOSFET 11, a ramp generator 18 to generate a ramp signal, an amplitude signal generator (second feedback controller 2) to generate an amplitude signal Comp corresponding to an amplitude of the ramp signal, and a first feedback controller 1 to control the ON timing of the high-side MOSFET 11 according to the ramp signal, a feedback signal FB, and a first reference voltage REF and control the ON width of the high-side MOSFET 11 according to the amplitude signal Comp. The ramp generator 18 controls the inclination of the ramp signal so that the ramp signal maintains a predetermined amplitude. The first feedback controller 1 controls the ON width of the high-side MOSFET 11 so that the ON width does not become narrower than a predetermined limit value.
摘要翻译：开关电源装置包括高边MOSFET 11，产生斜坡信号的斜坡发生器18，振幅信号发生器（第二反馈控制器2），用于产生对应于斜坡信号振幅的幅度信号Comp，以及第一反馈控制器1根据斜坡信号，反馈信号FB和第一参考电压REF来控制高边MOSFET 11的导通定时，并根据振幅信号控制高边MOSFET 11的导通宽度比较斜坡发生器18控制斜坡信号的倾斜，使得斜坡信号保持预定的幅度。第一反馈控制器1控制高侧MOSFET 11的导通宽度，使得ON宽度不会比预定极限值变窄。

94. 发明授权

US07965601B2 Disk recording/reproducing apparatus and disk recording method 有权
标题翻译：磁盘记录/再现装置和磁盘记录方法
公开(公告)号：US07965601B2
公开(公告)日：2011-06-21
申请号：US11666999
申请日：2005-11-01
申请人： Masaru Nakamura
发明人： Masaru Nakamura
IPC分类号： G11B7/00
CPC分类号： G11B20/10 , G11B7/0045 , G11B19/04 , G11B20/1879 , G11B2020/10972 , G11B2020/1476 , G11B2220/218 , G11B2220/2562
摘要： To provide an optical disk recording/reproducing apparatus capable of immediately suspending recording if a recording inadequate state occurs after start of recording, confirming the recording state by using an error-correction-code word unit and restarting recording after identifying the write continuation position. A recording starting section (1) instructs a recording gate/recording data creating section (5) to create a recording gate corresponding to a desired volume of data and recording data and to perform recording. If an inadequate-recording-state determining section (2) detects a recording inadequate state, a recording suspending section (3) instructs the recording gate/recording data creating section (5) to suspend outputting the recording gate and the recording data. A SYNC detection section (9) detects a SYNC signal from reproduced data, and a PO-error-correction processing section (11) performs PI-error-correction. A recording-suspended-position determining section (13) determines to what extent the recording has been performed. Depending on the result, a recording restart section (4) issues an instruction to restart recording, and the recording gate/recording data creating section (5) creates again the recording gate and recording data and restarts the recording.
摘要翻译：为了提供一种如果在开始记录之后发生记录不足状态，能够立即挂起记录的光盘记录/再现装置，通过使用纠错码字单元来确认记录状态，并且在识别写入连续位置之后重新开始记录。记录开始部分（1）指示记录门/记录数据创建部分（5）创建对应于所需数据量和记录数据的记录门并执行记录。如果不良记录状态确定部分（2）检测到记录不足状态，则记录暂停部分（3）指示记录门/记录数据创建部分（5）暂停输出记录门和记录数据。 SYNC检测部（9）从再现数据检测SYNC信号，PO纠错处理部（11）进行PI误差校正。记录暂停位置确定部（13）确定在多大程度上进行了记录。取决于结果，记录重启部分（4）发出重新开始记录的指令，并且记录门/记录数据创建部分（5）再次创建记录门和记录数据并重新开始记录。

95. 发明授权

US07897488B2 Dividing method for wafer having film on the front side thereof 有权
标题翻译：在其前侧具有膜的晶片的分割方法
公开(公告)号：US07897488B2
公开(公告)日：2011-03-01
申请号：US12468556
申请日：2009-05-19
申请人： Yosuke Watanabe , Ryugo Oba , Masaru Nakamura
发明人： Yosuke Watanabe , Ryugo Oba , Masaru Nakamura
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , B23K26/364 , B23K26/40 , B23K26/53 , B23K2103/172 , B23K2103/50
摘要： A wafer dividing method for dividing a wafer having a film on the front side thereof. The wafer dividing method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the substrate of the wafer from the front side thereof along the streets so that a focal point of the laser beam is set inside the substrate, thereby forming a modified layer in the substrate along each street, a film dividing step of applying a laser beam having an absorption wavelength to the film from the front side of the wafer along each street to thereby form a laser processed groove for dividing the film along each street, a back grinding step of grinding the back side of the substrate of the wafer to thereby reduce the thickness of the wafer to a predetermined thickness, a wafer supporting step of attaching the wafer to a dicing tape supported to an annular frame, and a wafer breaking step of applying an external force to the wafer by expanding the dicing tape to thereby break the wafer along each street.
摘要翻译：一种用于在其前侧分割具有膜的晶片的晶片分割方法。晶片分割方法包括：修改层形成步骤，其沿着街道从其前侧向晶片的基板施加具有透射波长的激光束，使得激光束的焦点设置在基板内部，从而形成沿着每个街道的基板中的改性层，膜分离步骤，沿着每条街道从晶片的前侧向膜施加具有吸收波长的激光束，从而形成用于沿着每条街道分割膜的激光加工槽，后磨削步骤，研磨晶片的基板的背面，从而将晶片的厚度减小到预定厚度;晶片支撑步骤，将晶片附着到支撑在环形框架上的切割带;以及晶片通过扩大切割胶带将外力施加到晶片从而沿着每个街道破裂晶片的断裂步骤。

96. 发明授权

US07888239B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US07888239B2
公开(公告)日：2011-02-15
申请号：US12496406
申请日：2009-07-01
申请人： Masaru Nakamura , Masatoshi Wakahara , Motoko Nakayama , Yuki Nakamura
发明人： Masaru Nakamura , Masatoshi Wakahara , Motoko Nakayama , Yuki Nakamura
IPC分类号： H01L21/78 , H01L21/46
CPC分类号： H01L21/78 , B23K26/009 , B23K26/042 , B23K26/40 , B23K2103/172 , B23K2103/42 , B23K2103/50
摘要： In a semiconductor device manufacturing method in which a wafer formed with devices in a plurality of areas sectioned by a plurality of streets formed in a lattice-like pattern on the front surface is divided into the individual devices along the streets, when the wafer is divided into the individual devices by exposing cut grooves formed along the streets by a dicing before grinding process, a rigid plate is applied to the front surface of the wafer and an adhesive film is attached to the rear surface of the wafer. Thereafter, a separation groove forming step is performed in which a laser beam is directed to the adhesive film along the cut grooves from the dicing tape side applied with the wafer attached with the adhesive film to form separation grooves in the adhesive film along the cut grooves.
摘要翻译：在半导体器件制造方法中，将形成有在前表面上以格子状形成的多个街道的多个区域中的元件形成的晶片沿着街道划分为各个器件，当晶片被分割时通过在研磨处理之前通过切割将沿着街道形成的切割槽暴露在单个装置中，将刚性板施加到晶片的前表面，并且将粘合剂膜附着到晶片的后表面。此后，进行分离槽形成步骤，其中激光束沿着切割带从切割带一侧引导到粘合剂膜，所述切割带侧涂覆有安装有粘合剂膜的晶片，以沿着切割槽在粘合膜中形成分离槽。

97. 发明授权

US07858497B2 Stacked device manufacturing method 有权
标题翻译：堆叠器件制造方法
公开(公告)号：US07858497B2
公开(公告)日：2010-12-28
申请号：US12576010
申请日：2009-10-08
申请人： Masaru Nakamura
发明人： Masaru Nakamura
IPC分类号： H01L21/78 , H01L21/46 , H01L21/301
CPC分类号： H01L21/6836 , H01L25/0657 , H01L25/50 , H01L2221/68327 , H01L2221/68336 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
摘要： A stacked device manufacturing method including a kerf forming step of forming a kerf on the front side of each of plural wafers along each street, the kerf having a depth corresponding to a predetermined finished thickness of each wafer, a first stacking step of stacking a first one of the wafers and a second one of the wafers in such a manner that the front side of the second wafer is opposed to the front side of the first wafer and that the electrodes of the second wafer are respectively bonded to the electrodes of the first wafer, a first back grinding step of grinding the back side of the second wafer to expose each kerf of the second wafer to the back side of the second wafer, a second stacking step of stacking a third one of the wafers to the second wafer in such a manner that the front side of the third wafer is opposed to the back side of the second wafer and that the electrodes of the third wafer are respectively bonded to the electrodes of the second wafer, and a second back grinding step of grinding the back side of the third wafer to expose each kerf of the third wafer to the back side of the third wafer.
摘要翻译：一种堆叠式装置制造方法，包括：沿着每条街道在多个晶片的前侧形成切口的切口形成步骤，所述切口具有与每个晶片的预定最终厚度对应的深度;第一堆叠步骤，一个晶片和第二个晶片，使得第二晶片的前侧与第一晶片的前侧相对，并且第二晶片的电极分别接合到第一晶片的电极晶片，第一后研磨步骤，其研磨第二晶片的背面以将第二晶片的每个切口暴露于第二晶片的背面;第二堆叠步骤，将第三个晶片堆叠到第二晶片; 使得第三晶片的前侧与第二晶片的背面相对并且第三晶片的电极分别接合到第二晶片的电极，并且第二背面研磨步骤，研磨第三晶片的背面以将第三晶片的每个切口暴露于第三晶片的背面。

98. 发明授权

US07796484B2 Tilt adjusting method and information recording/reproducing apparatus using the same 有权
标题翻译：倾斜调整方法及使用其的信息记录/再现装置
公开(公告)号：US07796484B2
公开(公告)日：2010-09-14
申请号：US12064215
申请日：2006-09-19
申请人： Masaru Nakamura
发明人： Masaru Nakamura
IPC分类号： G11B11/00
CPC分类号： G11B7/0956 , G11B7/005 , G11B20/10009 , G11B20/10111 , G11B20/1012 , G11B20/10296 , G11B20/10481 , G11B2220/2537
摘要： [Problems] To effectively perform optimal tilt adjustment. [Means for Solving the Problems] A tilt adjusting method adjusts a tilt angle of an actual incident light and reflected light with respect to an incident light and a reflected light under optimal tilt when recording and reproducing data onto/from an information recording medium. Two or more output signals having a balance between a signal component and a noise component changing with respect to a parameter of a correction object are extracted from the reproduction signal of the information recording medium and the signal component and the noise component are evaluated for performing signal correction, thereby calculating a first and a second coefficient. When the first coefficient is out of a set reference range, the tilt adjustment is performed by the first coefficient and when the first coefficient in the set reference range, the tilt adjustment is performed by the second coefficient.
摘要翻译： [问题]有效执行最佳倾斜调整。解决问题的方法当在信息记录介质上记录和再现数据时，倾斜调整方法调整实际入射光和反射光相对于入射光和最佳倾斜下的反射光的倾斜角。从信息记录介质的再现信号中提取具有相对于校正对象的参数改变的信号分量和噪声分量之间的平衡的两个或更多个输出信号，并且评估噪声分量以执行信号校正，从而计算第一和第二系数。当第一系数超出设定的参考范围时，通过第一系数执行倾斜调整，并且当设定的参考范围中的第一系数时，通过第二系数执行倾斜调整。

99. 发明授权

US07696069B2 Wafer dividing method 有权
标题翻译：晶圆分割法
公开(公告)号：US07696069B2
公开(公告)日：2010-04-13
申请号：US12073652
申请日：2008-03-07
申请人： Masaru Nakamura
发明人： Masaru Nakamura
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , B23K26/364 , B23K26/40 , B23K26/53 , B23K2103/50 , B28D5/0011
摘要： Disclosed herein is a method of dividing a wafer having a plurality of streets which are formed in a lattice pattern on the front surface and having devices which are formed in a plurality of areas sectioned by the plurality of streets into individual devices along the streets. The method includes applying a laser beam of a wavelength having permeability for the wafer along the streets to form a deteriorated layer along the streets in the inside of the wafer; forming a groove in areas corresponding to the streets from the rear side of the wafer; and exerting external force to the wafer where the deteriorated layer and the groove have been formed along the streets to divide the wafer into individual devices along the streets.
摘要翻译：本发明公开了一种分割具有多个街道的晶片的方法，该多个街道形成为前表面上的格子图案，并且具有形成在由多个街道划分的多个区域中的装置，沿街道形成单个装置。该方法包括沿着街道施加具有晶片渗透性的波长的激光束，以沿晶片内部的街道形成劣化层; 在与所述街道相对应的区域中从所述晶片的后侧形成凹槽; 并且沿着街道向已经形成有劣化层和凹槽的晶片施加外力，以将晶片划分成沿着街道的各个装置。

100. 发明授权

US07696010B2 Wafer dividing method 有权
标题翻译：晶圆分割法
公开(公告)号：US07696010B2
公开(公告)日：2010-04-13
申请号：US11639209
申请日：2006-12-15
申请人： Kazuma Sekiya , Masaru Nakamura , Satoshi Kobayashi
发明人： Kazuma Sekiya , Masaru Nakamura , Satoshi Kobayashi
IPC分类号： H01L21/00
CPC分类号： H01L21/67092 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D5/0011 , B28D5/0052 , B28D5/0094 , H01L21/67132 , H01L21/6836 , H01L21/78 , H01L2221/68327
摘要： A method of dividing a wafer having devices which are formed in a plurality of areas sectioned by a plurality of dividing lines formed in a lattice pattern on the front surface, into individual devices along the dividing lines, comprising: a deteriorated layer forming step for forming a deteriorated layer in the inside of the wafer along the dividing lines by applying a laser beam of a wavelength having permeability for the wafer along the dividing lines; a wafer supporting step for putting the rear surface of the wafer on the surface of an adhesive tape which is mounted on an annular frame and whose adhesive strength is reduced by applying ultraviolet radiation thereto; an adhesive strength reducing step for reducing the adhesive strength of the adhesive tape by applying ultraviolet radiation to the adhesive tape to which the wafer has been affixed; and a dividing step for dividing the wafer into individual devices along the dividing lines where the deteriorated layer has been formed by exerting external force to the wafer affixed to the adhesive tape whose adhesive strength has been reduced after the adhesive strength reducing step.
摘要翻译：一种分割具有形成在由前表面上形成为格子状的多个分割线划分的多个区域中的装置的晶片的分割方法，包括：劣化层形成步骤，用于形成通过沿分割线施加具有晶片的磁导率的波长的激光束，沿着分割线在晶片内部的劣化层; 晶片支撑步骤，用于将晶片的后表面放置在安装在环形框架上并通过施加紫外线辐射而降低粘合强度的胶带的表面上; 粘合强度降低步骤，通过对已经粘贴所述晶片的粘合带施加紫外线辐射来降低所述粘合带的粘合强度; 以及分割步骤，用于通过对固定到粘合强度已经降低的粘合带上的晶片的外力施加外力，沿着分割线将晶片分割成各个器件。

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