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91. 发明授权

US08142960B2 Exposure method, mask data producing method, and semiconductor device manufacturing method 有权
标题翻译：曝光方法，掩模数据制作方法以及半导体装置的制造方法
公开(公告)号：US08142960B2
公开(公告)日：2012-03-27
申请号：US12536758
申请日：2009-08-06
申请人： Satoshi Nagai , Kazuya Fukuhara
发明人： Satoshi Nagai , Kazuya Fukuhara
IPC分类号： G03F9/00 , G06F17/50
CPC分类号： G03F7/70433
摘要： An exposure method has irradiating a mask with light based on an exposure performing condition, a first mask pattern and a second mask pattern being formed in the mask, and projecting images of the first mask pattern and second mask pattern onto a wafer through a projection lens, a lower-layer film material and a photoresist being sequentially laminated on the wafer, wherein the exposure performing condition is a condition on which, when exposure is performed on a predetermined exposure condition, the predetermined exposure condition is adjusted such that a difference between a wafer position at which a best focus is obtained for the image of the first mask pattern and a wafer position at which a best focus is obtained for the image of the second mask pattern falls within a predetermined range, the wafer position of the first mask pattern and the wafer position of the second mask pattern being predicted using film thicknesses and optical characteristics of the photoresist and the lower-layer film material.
摘要翻译：曝光方法基于曝光执行条件照射具有光的掩模，在掩模中形成第一掩模图案和第二掩模图案，并且通过投影透镜将第一掩模图案和第二掩模图案的图像投影到晶片上，下层薄膜材料和光致抗蚀剂依次层压在晶片上，其中曝光执行条件是当在预定曝光条件下进行曝光时，调整预定曝光条件使得在对于第一掩模图案的图像获得最佳聚焦的晶片位置和对于第二掩模图案的图像获得最佳聚焦的晶片位置落在预定范围内，第一掩模图案的晶片位置并且使用光致抗蚀剂和下层的膜厚度和光学特性来预测第二掩模图案的晶片位置层膜材料。

92. 发明申请

US20110300472A1 Exposure Apparatus Inspection Mask and Exposure Apparatus Inspection Method 有权
标题翻译：曝光装置检查面具和曝光装置检查方法
公开(公告)号：US20110300472A1
公开(公告)日：2011-12-08
申请号：US12886157
申请日：2010-09-20
申请人： Nobuhiro KOMINE , Kazuya Fukuhara
发明人： Nobuhiro KOMINE , Kazuya Fukuhara
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： G03F1/44 , G03F7/70641 , G03F7/70683
摘要： According to one embodiment, an exposure apparatus inspection mask includes a substrate and a first pattern portion. The substrate has a major surface reflective to exposure light. The first pattern portion is provided on the major surface. The first pattern portion includes a first lower layer and a plurality of first reflection layers. The first lower layer is provided on the major surface and includes a plurality of first absorption layers periodically arranged at a prescribed pitch along a first direction parallel to the major surface and is absorptive to the exposure light. The plurality of first reflection layers are provided on a side of the first lower layer opposite to the substrate, are periodically arranged at the pitch along the first direction, expose at least part of each of the plurality of first absorption layers, and have higher reflectance for the exposure light than the first absorption layers.
摘要翻译：根据一个实施例，曝光装置检查掩模包括基板和第一图案部分。基板具有反射曝光光的主表面。第一图案部分设置在主表面上。第一图案部分包括第一下层和多个第一反射层。第一下层设置在主表面上，并且包括沿着平行于主表面的第一方向以规定间距周期性地排列并且吸收曝光光的多个第一吸收层。多个第一反射层设置在与基板相对的第一下层的一侧上，沿着第一方向以间距周期性地布置，暴露多个第一吸收层中的每一个的至少一部分，并且具有更高的反射率用于曝光光比第一吸收层。

93. 发明授权

US08072601B2 Pattern monitor mark and monitoring method suitable for micropattern 有权
标题翻译：模式监视标记和适用于微图案的监控方法
公开(公告)号：US08072601B2
公开(公告)日：2011-12-06
申请号：US12037757
申请日：2008-02-26
申请人： Kazuya Fukuhara , Kazutaka Ishigo
发明人： Kazuya Fukuhara , Kazutaka Ishigo
IPC分类号： G01B11/00 , G01B11/14 , H01L21/00 , H01L21/66 , G01R31/26
CPC分类号： H01L22/20 , H01L22/12
摘要： A method of forming a monitor mark includes forming an insulating film on a semiconductor substrate, and forming a first repetitive line pattern group and a second repetitive line pattern group by patterning the insulating film on the semiconductor substrate, such that the first repetitive line pattern group and the second repetitive line pattern group face each other with a predetermined space therebetween.
摘要翻译：形成监视标记的方法包括在半导体衬底上形成绝缘膜，并且通过对半导体衬底上的绝缘膜进行构图来形成第一重复线图案组和第二重复线图案组，使得第一重复线图案组并且第二重复线图案组之间以预定的间隔彼此面对。

94. 发明授权

US07960075B2 Photomask unit, exposing method and method for manufacturing semiconductor device 有权
标题翻译：光掩模单元，制造半导体器件的曝光方法和方法
公开(公告)号：US07960075B2
公开(公告)日：2011-06-14
申请号：US11939030
申请日：2007-11-13
申请人： Satoshi Nagai , Kazuya Fukuhara , Masamitsu Itoh , Kenji Kawano , Satoshi Tanaka
发明人： Satoshi Nagai , Kazuya Fukuhara , Masamitsu Itoh , Kenji Kawano , Satoshi Tanaka
IPC分类号： G03F1/00 , G02B5/08
CPC分类号： G03F1/62 , G03F7/70158 , G03F7/70191
摘要： A photomask unit includes a mask substrate having patterns arranged at a pitch P; and a pellicle which protects the mask substrate, wherein the pellicle is configured so that transmittance of incident light of an incident angle θ (0°
摘要翻译：光掩模单元包括具有以间距P布置的图案的掩模基板; 以及保护所述掩模基板的防护薄膜组件，其中，所述防护薄膜组件使得入射角的入射光的透射率; （0°<θ; <90°）高于入射角0°的入射光的透射率。

95. 发明申请

US20110068081A1 Pattern Forming Method 失效
标题翻译：图案形成方法
公开(公告)号：US20110068081A1
公开(公告)日：2011-03-24
申请号：US12884617
申请日：2010-09-17
申请人： Hiroyuki KASHIWAGI , Kazuya FUKUHARA
发明人： Hiroyuki KASHIWAGI , Kazuya FUKUHARA
IPC分类号： B29C35/08 , B29C59/02
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F1/50 , G03F1/54 , G03F7/2014
摘要： According to one embodiment, a pattern forming method is disclosed. The method includes contacting a template with light curable resin on a substrate. The template comprises a concave-convex pattern including concave portions and convex portions, and a metal layer provided on a convex portion of the concave-convex pattern. The concave-convex pattern is to be contacted with the light curable resin. The pattern forming method further includes irradiating the light curable resin with light of a predetermined wavelength under a condition ε1=−2ε2. Where ε1 is a complex relative permittivity of the metal layer corresponding to the predetermined wavelength, ε2 is a complex relative permittivity of the light curable resin corresponding to the predetermined wavelength.
摘要翻译：根据一个实施例，公开了一种图案形成方法。该方法包括使模板与基材上的光固化树脂接触。模板包括凹凸图案，其包括凹部和凸部，以及金属层，设置在凹凸图案的凸部上。凹凸图案与光固化树脂接触。图案形成方法还包括在条件1 = -2＆amp; 2的条件下用光可固化树脂照射预定波长的光。其中，1是对应于预定波长的金属层的复相对介电常数，2是对应于预定波长的光固化树脂的复相对介电常数。

96. 发明申请

US20110032501A1 EXPOSURE APPARATUS, EXPOSURE SYSTEM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：曝光装置，曝光系统及制造半导体器件的方法
公开(公告)号：US20110032501A1
公开(公告)日：2011-02-10
申请号：US12830881
申请日：2010-07-06
申请人： Kazuya FUKUHARA , Masayuki HATANO , Takuya KONO
发明人： Kazuya FUKUHARA , Masayuki HATANO , Takuya KONO
IPC分类号： G03B27/54
CPC分类号： G03F7/70525 , G03F7/705
摘要： In one embodiment, an exposure apparatus is configured to irradiate a mask with illumination light and to irradiate a wafer with light from the mask irradiated with the illumination light. The apparatus includes an information acquisition unit configured to acquire use history information that is information regarding a use history of the mask. The apparatus further includes a condition derivation unit configured to derive a setting value or a change amount of an optical setting condition of the exposure apparatus, based on the acquired use history information and correspondence information that indicates a correspondence between the use history of the mask and the optical setting condition of the exposure apparatus. The apparatus further includes an exposure unit configured to set the optical setting condition of the exposure apparatus to an optical setting condition specified by the derived setting value or change amount, and to expose the wafer under the set optical setting condition.
摘要翻译：在一个实施例中，曝光装置被配置为用照明光照射掩模，并且用来自照射照明光的掩模的光照射晶片。该装置包括：信息获取单元，被配置为获取与掩模的使用历史有关的信息的使用历史信息。该装置还包括条件导出单元，被配置为基于所获取的使用历史信息和对应信息来导出曝光装置的光学设置条件的设定值或变化量，该对应信息指示掩模的使用历史和曝光装置的光学设定条件。该装置还包括：曝光单元，被配置为将曝光装置的光学设置状态设置为由导出的设定值或变化量指定的光学设定条件，并在设定的光学设定条件下使晶片曝光。

97. 发明申请

US20100308513A1 TEMPLATE AND PATTERN FORMING METHOD 审中-公开
标题翻译：模式和图案形成方法
公开(公告)号：US20100308513A1
公开(公告)日：2010-12-09
申请号：US12796343
申请日：2010-06-08
申请人： Hiroyuki Kashiwagi , Kazuya Fukuhara , Ryoichi Inanami , Takuya Kono
发明人： Hiroyuki Kashiwagi , Kazuya Fukuhara , Ryoichi Inanami , Takuya Kono
IPC分类号： B29C35/08
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： According to one embodiment, a template for imprint lithography includes a transparent substrate having a pattern with a recess portion and a protruding portion, and a light-shielding portion formed on a bottom surface of the recess portion and on a top surface of the protruding portion. A side wall of the protruding portion is inclined.
摘要翻译：根据一个实施例，用于压印光刻的模板包括具有凹陷部分和突出部分的图案的透明基板，以及形成在凹部的底表面上并且在突出部分的顶表面上的遮光部分。突出部的侧壁倾斜。

98. 发明申请

US20100266960A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND EXPOSURE DEVICE 审中-公开
标题翻译：制造半导体器件和曝光器件的方法
公开(公告)号：US20100266960A1
公开(公告)日：2010-10-21
申请号：US12721310
申请日：2010-03-10
申请人： Hiromitsu MASHITA , Toshiya KOTANI , Michiya TAKIMOTO , Hidefumi MUKAI , Takafumi TAGUCHI , Kazuya FUKUHARA
发明人： Hiromitsu MASHITA , Toshiya KOTANI , Michiya TAKIMOTO , Hidefumi MUKAI , Takafumi TAGUCHI , Kazuya FUKUHARA
IPC分类号： G03F7/20 , G03B27/42
CPC分类号： G03B27/42 , G03F7/70525 , G03F7/70625
摘要： A method of manufacturing a semiconductor device according to an embodiment includes determining a second exposure parameter including exposure parameters except for an exposure amount from a dimension distribution information so that a resist pattern of a first resist pattern formed based on a second pattern has a desired dimension in a plurality of regions to be shot within a surface of a wafer.
摘要翻译：根据实施例的制造半导体器件的方法包括从尺寸分布信息确定包括曝光量除外的曝光参数的第二曝光参数，使得基于第二图案形成的第一抗蚀剂图案的抗蚀剂图案具有期望的尺寸在要在晶片表面内拍摄的多个区域中。

99. 发明授权

US07807323B2 Exposure condition setting method, semiconductor device manufacturing method, and exposure condition setting program 失效
标题翻译：曝光条件设定方法，半导体器件制造方法和曝光条件设定程序
公开(公告)号：US07807323B2
公开(公告)日：2010-10-05
申请号：US11783469
申请日：2007-04-10
申请人： Kazuya Fukuhara
发明人： Kazuya Fukuhara
IPC分类号： G03F9/00
CPC分类号： G03F7/701 , G03F7/705 , Y10S430/146
摘要： A method of optimally setting exposure conditions when light emitted from an effective light source is applied to a mask pattern formed on a mask for exposure and diffracted light emitted from the mask is projected onto a substrate via a projection lens to expose the substrate thereto, the method comprising defining an image evaluation amount which represents characteristics of an optical image or a resist pattern and which contains a factor indicating the influence of a dimensional error of the mask pattern on the image characteristics, determining an initial condition of the effective light source and the mask pattern, defining at least one of a parameter of the effective light source and a parameter of the mask pattern, and changing at least one of the parameters to calculate the image evaluation amount, and deciding an optimum parameter on the basis of the result of the calculation.
摘要翻译：一种将从有效光源发出的光线最佳地设置曝光条件的方法施加到形成在用于曝光的掩模上的掩模图案并且从掩模发射的衍射光通过投影透镜投影到基板上以将基板曝光，方法包括定义表示光学图像或抗蚀剂图案的特性的图像评估量，并且其包含指示掩模图案的尺寸误差对图像特性的影响的因子，确定有效光源的初始状态和掩模图案，限定有效光源的参数和掩模图案的参数中的至少一个，并且改变至少一个参数以计算图像评估量，并且基于该结果来确定最佳参数计算。

100. 发明申请

US20100225890A1 METHOD FOR EVALUATING FLARE IN EXPOSURE TOOL 审中-公开
标题翻译：曝光工具中评估粉碎的方法
公开(公告)号：US20100225890A1
公开(公告)日：2010-09-09
申请号：US12564879
申请日：2009-09-22
申请人： Satoshi NAGAI , Kazuya FUKUHARA
发明人： Satoshi NAGAI , Kazuya FUKUHARA
IPC分类号： G01J1/10 , G03B27/54
CPC分类号： G03B27/54 , G03F7/70591 , G03F7/70941
摘要： A method for evaluating flare of an exposure tool has measuring a first reference integral exposure amount of illumination light emitted from the light source, and a unit reference integral exposure amount of illumination light emitted from the light source, the first reference integral exposure amount being required for the first evaluation pattern to be developed on the photosensitive film, the unit reference integral exposure amount being required for the first effective exposure region to be developed on the photosensitive film; calculating a first evaluation value by dividing the unit reference integral exposure amount by the first reference integral exposure amount; and evaluating a total flare amount of the illuminating optical system and the projecting optical system, using the first evaluation value.
摘要翻译：用于评估曝光工具的光晕的方法具有测量从光源发射的照明光的第一参考积分曝光量和从光源发射的照明光的单位参考积分曝光量，需要第一参考积分曝光量对于要在感光膜上显影的第一评估图案，要在感光膜上显影第一有效曝光区域所需的单位参考积分曝光量; 通过将单位参考积分曝光量除以第一参考积分曝光量来计算第一评估值; 以及使用所述第一评估值来评估所述照明光学系统和所述投影光学系统的总耀斑量。

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