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91. 发明授权

US08250293B2 Data exchange in resistance changing memory for improved endurance 有权
标题翻译：电阻变化记忆中的数据交换，以提高耐力
公开(公告)号：US08250293B2
公开(公告)日：2012-08-21
申请号：US12687951
申请日：2010-01-15
申请人： Thomas Happ , Jan Boris Philipp
发明人： Thomas Happ , Jan Boris Philipp
IPC分类号： G06F12/10 , G06F12/16
CPC分类号： G11C11/16 , G11C11/1673 , G11C11/1675 , G11C13/0002 , G11C13/0035 , G11C13/0069
摘要： According to one embodiment of the present invention, a method of operating an integrated circuit including a plurality of resistance changing memory cells grouped into physical memory units is provided. The method includes: Monitoring writing access numbers assigned to the physical memory units, each writing access number reflecting the number of writing accesses to the physical memory unit to which the writing access number is assigned; if the value of a writing access number assigned to a first physical memory unit exceeds a writing access threshold value, a data exchange process is carried out during which the data content stored within the first physical memory unit is exchanged with the data content of a second physical memory unit having a writing access number of a lower value.
摘要翻译：根据本发明的一个实施例，提供了一种操作集成电路的方法，该集成电路包括分组成物理存储器单元的多个电阻变化存储器单元。该方法包括：监视分配给物理存储器单元的写入访问号码，每个写入访问号码反映写入访问次数到写入访问号码的物理存储单元; 如果分配给第一物理存储器单元的写访问号码的值超过写访问阈值，则执行数据交换处理，在该数据交换处理期间，存储在第一物理存储单元内的数据内容与第二物理存储单元的数据内容交换物理存储单元具有较低值的写入访问号。

92. 发明授权

US08084799B2 Integrated circuit with memory having a step-like programming characteristic 有权
标题翻译：具有阶梯状编程特性的具有存储器的集成电路
公开(公告)号：US08084799B2
公开(公告)日：2011-12-27
申请号：US11488422
申请日：2006-07-18
申请人： Thomas Happ , Jan Boris Philipp
发明人： Thomas Happ , Jan Boris Philipp
IPC分类号： H01L27/108
CPC分类号： G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/0078 , G11C2013/009 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： A memory cell includes a first electrode, a second electrode, and phase change material between the first electrode and the second electrode. The phase change material has a step-like programming characteristic. The first electrode, the second electrode, and the phase change material form a via or trench memory cell.
摘要翻译：存储单元包括在第一电极和第二电极之间的第一电极，第二电极和相变材料。相变材料具有阶梯状编程特性。第一电极，第二电极和相变材料形成通孔或沟槽存储单元。

93. 发明授权

US08017930B2 Pillar phase change memory cell 有权
标题翻译：支柱相变存储单元
公开(公告)号：US08017930B2
公开(公告)日：2011-09-13
申请号：US11643438
申请日：2006-12-21
申请人： Jan Boris Philipp , Thomas Happ
发明人： Jan Boris Philipp , Thomas Happ
IPC分类号： H01L47/00
CPC分类号： H01L45/1675 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148
摘要： A memory cell includes a first electrode, a storage location, and a second electrode. The storage location includes a phase change material and contacts the first electrode. The storage location has a first cross-sectional width. The second electrode contacts the storage location and has a second cross-sectional width greater than the first cross-sectional width. The first electrode, the storage location, and the second electrode form a pillar phase change memory cell.
摘要翻译：存储单元包括第一电极，存储位置和第二电极。存储位置包括相变材料并与第一电极接触。存储位置具有第一横截面宽度。第二电极接触存储位置并且具有大于第一横截面宽度的第二横截面宽度。第一电极，存储位置和第二电极形成柱状相变存储单元。

94. 发明授权

US07906368B2 Phase change memory with tapered heater 有权
标题翻译：带锥形加热器的相变存储器
公开(公告)号：US07906368B2
公开(公告)日：2011-03-15
申请号：US11771501
申请日：2007-06-29
申请人： Matthew Breitwisch , Thomas Happ , Eric A. Joseph , Hsiang-Lan Lung , Jan Boris Philipp
发明人： Matthew Breitwisch , Thomas Happ , Eric A. Joseph , Hsiang-Lan Lung , Jan Boris Philipp
IPC分类号： H01L21/06
CPC分类号： H01L45/1675 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： An embodiment of the present invention includes a method of forming a nonvolatile phase change memory (PCM) cell. This method includes forming at least one bottom electrode; forming at least one phase change material layer on at least a portion of an upper surface of the bottom electrode; forming at least one heater layer on at least a portion of an upper surface of the phase change material layer; and shaping the heater layer into a tapered shape, such that an upper surface of the heater layer has a cross-sectional width that is longer than a cross-sectional width of a bottom surface of the heater layer contacting the phase change material layer.
摘要翻译：本发明的实施例包括形成非易失性相变存储器（PCM）单元的方法。该方法包括形成至少一个底部电极; 在所述底部电极的上表面的至少一部分上形成至少一个相变材料层; 在所述相变材料层的上表面的至少一部分上形成至少一个加热层; 并且将加热器层成形为锥形，使得加热器层的上表面的横截面宽度大于与相变材料层接触的加热器层的底表面的横截面宽度。

95. 发明授权

US07898847B2 Method to prevent overreset 有权
标题翻译：防止过度复位的方法
公开(公告)号：US07898847B2
公开(公告)日：2011-03-01
申请号：US11715749
申请日：2007-03-08
申请人： Jan Boris Philipp
发明人： Jan Boris Philipp
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C11/5678 , G11C13/0004 , G11C16/3468 , G11C2013/008 , G11C2013/0083 , G11C2013/0092
摘要： A method of addressing a memory cell includes applying a plurality of pulses to the memory cell, wherein a subsequent pulse has an amplitude greater than an initial pulse. In addition, a memory includes a memory cell and a control circuit configured to address the memory cell by applying a plurality of pulses to the memory cell, wherein a subsequent pulse has an amplitude greater than an initial pulse.
摘要翻译：寻址存储器单元的方法包括将多个脉冲施加到存储器单元，其中随后的脉冲具有大于初始脉冲的幅度。此外，存储器包括存储单元和控制电路，配置为通过向存储单元施加多个脉冲来对存储单元寻址，其中后续脉冲具有大于初始脉冲的幅度。

96. 发明授权

US07889536B2 Integrated circuit including quench devices 有权
标题翻译：集成电路包括淬火装置
公开(公告)号：US07889536B2
公开(公告)日：2011-02-15
申请号：US11957878
申请日：2007-12-17
申请人： Thomas Happ , Jan Boris Philipp
发明人： Thomas Happ , Jan Boris Philipp
IPC分类号： G11C11/00 , G11C11/36
CPC分类号： G11C13/003 , G11C13/0004 , G11C13/0069 , G11C2013/0078 , G11C2013/0092 , G11C2213/72 , G11C2213/74 , G11C2213/79
摘要： An integrated circuit includes a line, at least two quench devices coupled to the line, and a resistivity changing material memory cell coupled to the line. The at least two quench devices are configured to quench a write signal on the line during a write operation of the memory cell.
摘要翻译：集成电路包括线路，耦合到线路的至少两个骤冷器件以及耦合到该线路的电阻率变化材料存储器单元。至少两个骤冷装置被配置为在存储器单元的写入操作期间在线路上猝灭写入信号。

97. 发明申请

US20100323493A1 Method for Fabricating an Integrated Circuit Including Resistivity Changing Material Having a Planarized Surface 有权
标题翻译：包括具有平坦化表面的电阻率变化材料的集成电路的制造方法
公开(公告)号：US20100323493A1
公开(公告)日：2010-12-23
申请号：US12856007
申请日：2010-08-13
申请人： Jan Boris Philipp , Thomas Happ
发明人： Jan Boris Philipp , Thomas Happ
IPC分类号： H01L21/02
CPC分类号： H01L45/1683 , G11C11/5678 , G11C13/0004 , G11C2213/79 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148
摘要： An integrated circuit is fabricated by providing a preprocessed wafer including a first electrode, depositing a dielectric material over the preprocessed wafer, etching an opening in the dielectric material to expose a portion of the first electrode and depositing a first resistivity changing material over exposed portions of the etched dielectric material and the first electrode. The first resistivity changing material is planarized to expose the etched dielectric material. A second resistivity changing material is deposited over the etched dielectric material and the first resistivity changing material, and an electrode material is deposited over the second resistivity changing material.
摘要翻译：通过提供包括第一电极的预处理晶片，在预处理的晶片上沉积电介质材料，蚀刻介电材料中的开口以暴露第一电极的一部分并在第一电极的暴露部分上沉积第一电阻率变化材料来制造集成电路蚀刻的电介质材料和第一电极。第一电阻率变化材料被平坦化以暴露蚀刻的电介质材料。第二电阻率变化材料沉积在蚀刻的电介质材料和第一电阻率变化材料上，并且电极材料沉积在第二电阻率变化材料上。

98. 发明申请

US20100193763A1 CURRENT CONSTRICTING PHASE CHANGE MEMORY ELEMENT STRUCTURE 有权
标题翻译：当前的相位变化记忆元素结构
公开(公告)号：US20100193763A1
公开(公告)日：2010-08-05
申请号：US12727672
申请日：2010-03-19
申请人： Chieh-Fang Chen , Shih Hung Chen , Yi-Chou Chen , Thomas Happ , Chia Hua Ho , Ming-Hsiang Hsueh , Chung Hon Lam , Hsiang-Lan Lung , Jan Boris Philipp , Simone Raoux
发明人： Chieh-Fang Chen , Shih Hung Chen , Yi-Chou Chen , Thomas Happ , Chia Hua Ho , Ming-Hsiang Hsueh , Chung Hon Lam , Hsiang-Lan Lung , Jan Boris Philipp , Simone Raoux
IPC分类号： H01L45/00
CPC分类号： B82Y10/00 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/16
摘要： A layer of nanoparticles having a dimension on the order of 10 nm is employed to form a current constricting layer or as a hardmask for forming a current constricting layer from an underlying insulator layer. The nanoparticles are preferably self-aligning and/or self-planarizing on the underlying surface. The current constricting layer may be formed within a bottom conductive plate, within a phase change material layer, within a top conductive plate, or within a tapered liner between a tapered via sidewall and a via plug contains either a phase change material or a top conductive material. The current density of the local structure around the current constricting layer is higher than the surrounding area, thus allowing local temperature to rise higher than surrounding material. The total current required to program the phase change memory device, and consequently the size of a programming transistor, is reduced due to the current constricting layer.
摘要翻译：使用具有大约10nm的尺寸的纳米颗粒层形成电流收缩层或作为用于从下面的绝缘体层形成电流收缩层的硬掩模。纳米颗粒优选在下面的表面上自对准和/或自平坦化。电流收缩层可以形成在底部导电板内，在相变材料层内，在顶部导电板内，或在锥形衬垫之间的锥形衬里之间，锥形通孔侧壁和通孔插塞包含相变材料或顶部导电材料。电流收缩层周围的局部结构的电流密度高于周围区域，从而允许局部温度比周围材料高。由于电流收缩层，减少编程相变存储器件所需的总电流以及编程晶体管的尺寸。

99. 发明授权

US07714315B2 Thermal isolation of phase change memory cells 有权
标题翻译：相变记忆体的热隔离
公开(公告)号：US07714315B2
公开(公告)日：2010-05-11
申请号：US11437211
申请日：2006-05-19
申请人： Thomas Happ , Jan Boris Philipp , Ulrike Gruening-von Schwerin
发明人： Thomas Happ , Jan Boris Philipp , Ulrike Gruening-von Schwerin
IPC分类号： H01L29/76
CPC分类号： H01L45/144 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/128 , H01L45/1293 , H01L45/148
摘要： A memory includes an array of resistive memory cells, bit lines between rows of the memory cells for accessing the memory cells, and a conductive plate coupled to each of the memory cells.
摘要翻译：存储器包括电阻存储器单元的阵列，用于存储单元的存储单元的行之间的位线以及耦合到每个存储单元的导电板。

100. 发明授权

US07696510B2 Integrated circuit including memory having reduced cross talk 失效
标题翻译：包括具有减少串扰的存储器的集成电路
公开(公告)号：US07696510B2
公开(公告)日：2010-04-13
申请号：US11948204
申请日：2007-11-30
申请人： Jan Boris Philipp , Thomas Happ
发明人： Jan Boris Philipp , Thomas Happ
IPC分类号： H01L47/00
CPC分类号： H01L27/2472 , Y10S438/90
摘要： An integrated circuit includes a first electrode, a second, a first resistivity changing material contacting the first electrode at a first interface, and a second resistivity changing material contacting the second electrode at a second interface. A direct communication path between the first interface and the second interface is greater than the lateral distance.
摘要翻译：集成电路包括第一电极，第二电极，第一电阻率变化材料，在第一界面处接触第一电极，第二电阻率变化材料在第二界面处与第二电极接触。第一接口和第二接口之间的直接通信路径大于横向距离。

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