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    • 91. 发明申请
    • APPARATUS FOR TESTING TENSILE STRENGTH UNDER HIGH TEMPERATURE CONDITION AND UNIT FOR MEASURING ELONGATION PROVIDED IN THE SAME
    • 用于在高温条件下测试拉伸强度的装置和用于测量其中提供的伸长率的单元
    • US20110126635A1
    • 2011-06-02
    • US12947173
    • 2010-11-16
    • BONG JAE LEEYong Ho YooHeung Youl KimHyung Jun KimKyung Hoon Park
    • BONG JAE LEEYong Ho YooHeung Youl KimHyung Jun KimKyung Hoon Park
    • G01N3/08
    • G01N3/18G01N3/60G01N2203/0017
    • Provided are an apparatus for testing a tensile strength under a high temperature condition and a unit for measuring elongation provided in the same. The apparatus for testing a tensile strength under a high temperature condition includes a base frame part, a test sample loader and a cylinder part connected to the base frame part and applying a tensile force to a test sample, and a heater for forming a high temperature condition to the test sample. The unit for measuring elongation includes a movable frame, a vertical bar, and a measurement head part connected to the vertical bar to measure elongation of the test sample and blocking heat from the heater. Therefore, since a tensile strength and elongation of the test sample can be measured under a high temperature condition, it is possible to recognize deformation characteristics of a material due to a fire and prevent deformation of or damage to the elongation measurement unit even under the high temperature condition, improving durability and reliability of the apparatus.
    • 提供了一种用于在高温条件下测试拉伸强度的装置和用于测量在其中提供的伸长率的单元。 用于在高温条件下测试拉伸强度的装置包括底架部件,试样装载器和连接到基架部件的圆筒部件并向试样施加张力,以及用于形成高温的加热器 测试样品的条件。 用于测量伸长率的单元包括可移动框架,垂直杆和连接到垂直杆的测量头部分,以测量测试样品的伸长率并阻止来自加热器的热量。 因此,由于可以在高温条件下测定试样的拉伸强度和伸长率,所以能够识别由于火灾引起的材料的变形特性,即使在高温下也能够防止伸长率测定单元的变形或损坏 温度条件,提高设备的耐久性和可靠性。
    • 92. 发明申请
    • JIG FOR COMPRESSION TEST IN A HEATING FURNACE
    • JIG用于加热炉中的压缩试验
    • US20110107854A1
    • 2011-05-12
    • US12941264
    • 2010-11-08
    • HYUNG JUN KIMHEUNG YOUL KIM
    • HYUNG JUN KIMHEUNG YOUL KIM
    • G01L1/00
    • G01N3/18G01N2203/0447
    • Provided is a jig for a compression test in a heating furnace capable of variously changing boundary conditions such as a both-end hinge, a both-end fixing, or one-end hinge and one-end fixing through simple attachment and detachment of a holder.The jig for a compression test in a heating furnace includes an upper plate having a lower surface in which a hemispherical projection is formed at a center thereof, a lower plate correspondingly disposed under the upper plate, and having an upper surface in which a hemispherical concave part is formed, and holders each having an upper flange inserted into a fixing groove of the upper surface of the upper plate, a lower flange inserted into a fixing groove of the lower surface of the lower plate, and a middle flange inserted into a gap between the upper plate and the lower plate, wherein a hinge condition and an end fixing condition of a test sample are implemented through attachment and detachment of the holders.Therefore, it is possible to easily implement hinge and fixing conditions of a test sample installed in a heating furnace using one jig, remarkably reducing time and cost consumed to install the test sample.
    • 本发明提供一种加热炉中的压缩试验用夹具,其能够通过简单的安装和拆卸固定而能够不同地改变诸如两端铰链,两端固定或一端铰链的边界条件 。 在加热炉中用于压缩试验的夹具包括:具有下表面的上板,其中半球形突起在其中心处形成,下板相应地设置在上板的下方,并且具有上表面,其中半球形凹 并且每个具有插入上板的上表面的固定槽中的上凸缘的支架,插入到下板的下表面的固定槽中的下凸缘和插入到间隙中的中间凸缘 在上板和下板之间,其中通过夹持器的附接和拆卸来实现测试样品的铰链状态和端部固定状态。 因此,可以使用一个夹具容易地实现安装在加热炉中的试样的铰链和固定条件,显着地减少了安装试样所需的时间和成本。
    • 98. 发明申请
    • Spin Transistor Using Perpendicular Magnetization
    • 旋转晶体管使用垂直磁化
    • US20080308844A1
    • 2008-12-18
    • US11949659
    • 2007-12-03
    • Hyun-Cheol KooSuk-Hee HanJoon-Yeon ChangHyung-Jun KimJin-Seock Ma
    • Hyun-Cheol KooSuk-Hee HanJoon-Yeon ChangHyung-Jun KimJin-Seock Ma
    • H01L29/96
    • G11C11/16H01L29/20H01L29/66984
    • A spin transistor useful for device miniaturization and high-density integration is provided. The spin transistor includes: a semiconductor substrate including a channel layer; ferromagnetic source and drain disposed on the semiconductor substrate to be separated from each other and to be magnetized in a direction perpendicular to a surface of the channel layer; a gate formed on the semiconductor substrate between the source and the drain to adjust spins of electrons passing through the channel layer, wherein spin-polarized electrons are injected from the source to the channel layer, and the electrons injected into the channel layer pass though the channel layer and are injected into the drain, and wherein the spins of the electrons passing through the channel layer undergo precession due to a spin-orbit coupling induced magnetic field according to a voltage of the gate.
    • 提供了用于器件小型化和高密度集成的自旋晶体管。 自旋晶体管包括:包括沟道层的半导体衬底; 设置在半导体衬底上的铁磁源极和漏极彼此分离并沿垂直于沟道层表面的方向被磁化; 形成在源极和漏极之间的半导体衬底上的栅极,以调节通过沟道层的电子的旋转,其中自旋极化电子从源极注入沟道层,并且注入沟道层的电子通过 沟道层并且注入到漏极中,并且其中通过沟道层的电子的自旋由于根据栅极的电压的自旋 - 轨道耦合感应磁场而进行进动。
    • 100. 发明申请
    • Spin Transistor Using Stray Magnetic Field
    • 旋转晶体管使用杂散磁场
    • US20080169492A1
    • 2008-07-17
    • US11777228
    • 2007-07-12
    • Hyun Cheol KooJong Hwa EomSuk Hee HanJoon Yeon ChangHyung Jun Kim
    • Hyun Cheol KooJong Hwa EomSuk Hee HanJoon Yeon ChangHyung Jun Kim
    • H01L29/78
    • H01L29/66984G11C11/16H01L29/0843Y10S257/902Y10S977/933
    • Disclosed herein is a spin transistor including: a semiconductor substrate having a channel layer formed therein; first and second electrodes which are formed to be spaced apart from each other on the substrate at a predetermined distance along a longitudinal direction of the channel layer; a source and drain which include magnetized ferromagnetic materials and are formed to be spaced apart form each other between the first electrode and the second electrode at a predetermined distance along the longitudinal direction of the channel layer; and a gate which is formed on the substrate between the source and the drain, and adjusts spin orientations of electrons passing through the channel layer, wherein the electrons passing through the channel layer are spin-aligned at a lower side of the source by a stray magnetic field of the source and spin-filtered at a lower side of the drain by a stray field of the drain.
    • 本文公开了一种自旋晶体管,包括:其中形成有沟道层的半导体衬底; 第一和第二电极,沿着沟道层的纵向以预定的距离形成在衬底上彼此间隔开; 源极和漏极,其包括磁化铁磁材料,并且沿着沟道层的纵向方向以预定的距离在第一电极和第二电极之间彼此间隔开形成间隔开的源极和漏极; 以及形成在源极和漏极之间的衬底上的栅极,并且调节通过沟道层的电子的自旋取向,其中通过沟道层的电子通过杂散在源的较低侧自旋对准 源极的磁场,并通过漏极的杂散场在漏极的下侧进行自旋滤波。