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91. 发明授权

US08289661B2 CPP structure with enhanced GMR ratio 有权
标题翻译： CPP结构具有增强的GMR比
公开(公告)号：US08289661B2
公开(公告)日：2012-10-16
申请号：US13065975
申请日：2011-04-04
申请人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
发明人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y40/00 , G11B5/3906 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01F41/18 , H01F41/303 , H01L43/10 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1129 , Y10T428/115
摘要： A CPP-GMR spin valve having a CoFe/NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies from 85 to 100 atomic % to maintain low Hc and λS values. A higher than normal Fe content in the CoFe layer improves the MR ratio by ≧16% compared with conventional CoFe/NiFe free layers in which the Fe content in CoFe is typically
摘要翻译：公开了一种具有CoFe / NiFe复合自由层的CPP-GMR自旋阀，其中CoFe层的Fe含量为20〜70原子％，NiFe层的Ni含量为85〜100原子％，保持低Hc， λS值。与FeFe中的Fe含量通常<20原子％，NiFe中的Ni含量<85原子％的常规CoFe / NiFe自由层相比，CoFe层中高于正常Fe含量使MR比提高了16％。 CPP-GMR性能也可以通过在被钉扎层和自由层之间的铜间隔物中结合约束电流通路层来优化。对于具有AP2 / Ru / AP1配置的钉扎层，通过由[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成的AP1层来进一步提高自旋阀性能。

92. 发明授权

US08183061B2 High density spin-transfer torque MRAM process 有权
标题翻译：高密度自旋转移力矩MRAM工艺
公开(公告)号：US08183061B2
公开(公告)日：2012-05-22
申请号：US12931648
申请日：2011-02-07
申请人： Tom Zhong , Chyu-Jiuh Torng , Rongfu Xiao , Adam Zhong , Wai-Ming Johnson Kan , Daniel Liu
发明人： Tom Zhong , Chyu-Jiuh Torng , Rongfu Xiao , Adam Zhong , Wai-Ming Johnson Kan , Daniel Liu
IPC分类号： H01L21/441
CPC分类号： H01L27/228 , H01L43/12
摘要： A STT-MRAM integration scheme is disclosed wherein the connection between a MTJ and CMOS metal is simplified by forming an intermediate via contact (VAC) on a CMOS landing pad, a metal (VAM) pad that contacts and covers the VAC, and a MTJ on the VAM. A dual damascene process is performed to connect BIT line metal to CMOS landing pads through VAC/VAM/MTJ stacks in a device region, and to connect BIT line connection pads to CMOS connection pads through BIT connection vias outside the device region. The VAM pad is a single layer or composite made of Ta, TaN, or other conductors which serves as a diffusion barrier, has a highly smooth surface for MTJ formation, and provides excellent selectivity with refill dielectric materials during a chemical mechanical polish process. Each VAC is from 500 to 3000 Angstroms thick to minimize additional circuit resistance and minimize etch burden.
摘要翻译：公开了一种STT-MRAM集成方案，其中通过在CMOS着陆焊盘，接触和覆盖VAC的金属（VAM）焊盘上形成中间通孔接触（VAC）来简化MTJ和CMOS金属之间的连接，以及MTJ 在VAM上。执行双镶嵌工艺，通过设备区域中的VAC / VAM / MTJ堆叠将BIT线金属连接到CMOS着陆焊盘，并通过设备区域外的BIT连接通孔将BIT线连接焊盘连接到CMOS连接焊盘。 VAM焊盘是由Ta，TaN或用作扩散阻挡层的其它导体制成的单层或复合材料，具有用于MTJ形成的高度光滑的表面，并且在化学机械抛光工艺期间提供了与补充介电材料的优异选择性。每个VAC为500至3000埃厚，以最小化额外的电路电阻并最小化蚀刻负担。

93. 发明授权

US08138561B2 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM 有权
标题翻译：用于制造自旋转矩（STT）-RAM的高性能MTJ装置的结构和方法
公开(公告)号：US08138561B2
公开(公告)日：2012-03-20
申请号：US12284066
申请日：2008-09-18
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Po-Kang Wang , Robert Beach , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Po-Kang Wang , Robert Beach , Witold Kula
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F41/307 , H01L43/12
摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by a NOX process, a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc0, and a Ru capping layer to enhance the spin scattering effect and increase dR/R. Good write margin is achieved by modifying the NOX process to afford a RA less than 10 ohm-μm2 and good read margin is realized with a dR/R of >100% by annealing at 330° C. or higher to form crystalline CoFeB free layers. The NCC thickness is maintained in the 6 to 10 Angstrom range to reduce Rp and avoid Fe(Si) granules from not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A FeSiO layer may be inserted below the Ru layer in the capping layer to prevent the Ru from causing a high damping constant in the upper CoFeB free layer.
摘要翻译：公开了一种STT-RAM MTJ，其具有通过NOX工艺形成的MgO隧道势垒，具有中间纳米通道层的CoFeB / FeSiO / CoFeB复合自由层以最小化Jc0，以及Ru覆盖层以增强自旋散射效应并增加 dR / R。通过改变NOX工艺以获得RA小于10欧姆 - μm2的良好的写入余量，并且通过在330℃或更高温度退火以dO / R> 100％实现良好的读取余量以形成结晶CoFeB自由层。 NCC厚度保持在6至10埃范围内以减少Rp，并避免Fe（Si）颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。可以在覆盖层中的Ru层下方插入FeSiO层，以防止Ru在上部CoFeB自由层中引起高阻尼常数。

94. 发明授权

US08133745B2 Method of magnetic tunneling layer processes for spin-transfer torque MRAM 有权
标题翻译：旋转转矩MRAM的磁隧道层工艺方法
公开(公告)号：US08133745B2
公开(公告)日：2012-03-13
申请号：US11975045
申请日：2007-10-17
申请人： Tom Zhong , Rongfu Xiao , Chyu-Jiuh Torng , Adam Zhong
发明人： Tom Zhong , Rongfu Xiao , Chyu-Jiuh Torng , Adam Zhong
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , B82Y10/00 , H01L27/228
摘要： A method for forming a MTJ in a STT-MRAM is disclosed in which the easy-axis CD is determined independently of the hard-axis CD. One approach involves two photolithography steps and two etch steps to form a post in a hard mask which is transferred through a MTJ stack of layers by a third etch process. Optionally, the third etch may stop on the tunnel barrier or in the free layer. A second embodiment involves forming a first parallel line pattern on a hard mask layer and transferring the line pattern through the MTJ stack with a first etch step. A planar insulation layer is formed adjacent to the sidewalls in the line pattern and then a second parallel line pattern is formed which is transferred by a second etch through the MTJ stack to form a post pattern. Etch end point may be controlled independently for hard-axis and easy-axis dimensions.
摘要翻译：公开了一种用于在STT-MRAM中形成MTJ的方法，其中容易轴CD独立于硬轴CD来确定。一种方法涉及两个光刻步骤和两个蚀刻步骤，以在通过第三蚀刻工艺通过MTJ叠层堆叠的硬掩模中形成柱。可选地，第三蚀刻可以在隧道势垒上或在自由层中停止。第二实施例涉及在硬掩模层上形成第一平行线图案，并通过第一蚀刻步骤通过MTJ堆叠传送线图案。平面绝缘层与线图案中的侧壁相邻地形成，然后形成第二平行线图案，其通过第二次蚀刻通过MTJ叠层转印以形成柱形图案。蚀刻终点可以独立控制硬轴和易轴尺寸。

95. 发明授权

US08107201B2 Hard bias design for extra high density recording 有权
标题翻译：用于超高密度记录的硬偏置设计
公开(公告)号：US08107201B2
公开(公告)日：2012-01-31
申请号：US12660908
申请日：2010-03-05
申请人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
发明人： Kunliang Zhang , Yun-Fei Li , Chyu-Jiuh Torng , Chen-Jung Chien
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.
摘要翻译：用于偏置读取头内的MR元件中的自由层的硬偏置结构由具有Co78.6Cr5.2Pt16.2 / Co65Cr15Pt20配置的复合硬偏置层组成。 Co65Cr15Pt20上层具有较大的Hc值，厚度约为Co78.6Cr5.2Pt16.2层的2〜10倍。硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。可选地，Co78.6Cr5.2Pt16.2层的厚度为零，Co65Cr15Pt20层形成在BCC底层上。本发明还包括层压硬偏置结构。可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

96. 发明授权

US08080432B2 High performance MTJ element for STT-RAM and method for making the same 有权
标题翻译：用于STT-RAM的高性能MTJ元件和制作相同的方法
公开(公告)号：US08080432B2
公开(公告)日：2011-12-20
申请号：US12803190
申请日：2010-06-21
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L21/00 , H01L21/336 , H01L21/461
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3272 , H01F10/329 , H01F10/3295 , H01F41/307 , H01L43/10 , H01L43/12
摘要： A method of forming a STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that comprises an amorphous layer of Co60Fe20B20. of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.
摘要翻译：形成利用自旋角动量转移的STT-MTJ MRAM单元的形成方法，作为改变自由层的磁矩方向的机构。该器件包括形成在被钉扎层的Ar离子等离子体平滑表面上的IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧道势垒层，在一个实施例中，包含非晶态的自由层 Co60Fe20B20层。分别在3和6埃的Fe的两个结晶层之间形成约20埃的厚度。自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

97. 发明申请

US20110183158A1 CPP structure with enhanced GMR ratio 有权
标题翻译： CPP结构具有增强的GMR比
公开(公告)号：US20110183158A1
公开(公告)日：2011-07-28
申请号：US13065975
申请日：2011-04-04
申请人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
发明人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y40/00 , G11B5/3906 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01F41/18 , H01F41/303 , H01L43/10 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1129 , Y10T428/115
摘要： A CPP-GMR spin valve having a CoFe/NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies from 85 to 100 atomic % to maintain low Hc and λS values. A higher than normal Fe content in the CoFe layer improves the MR ratio by ≧16% compared with conventional CoFe/NiFe free layers in which the Fe content in CoFe is typically
摘要翻译：公开了一种具有CoFe / NiFe复合自由层的CPP-GMR自旋阀，其中CoFe层的Fe含量为20〜70原子％，NiFe层的Ni含量为85〜100原子％，保持低Hc， λS值。与FeFe中的Fe含量通常<20原子％，NiFe中的Ni含量<85原子％的常规CoFe / NiFe自由层相比，CoFe层中高于正常Fe含量使MR比提高了16％。 CPP-GMR性能也可以通过在被钉扎层和自由层之间的铜间隔物中结合约束电流通路层来优化。对于具有AP2 / Ru / AP1配置的钉扎层，通过由[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成的AP1层来进一步提高自旋阀性能。

98. 发明申请

US20110129946A1 High density spin-transfer torque MRAM process 有权
公开(公告)号：US20110129946A1
公开(公告)日：2011-06-02
申请号：US12931648
申请日：2011-02-07
申请人： Tom Zhong , Chyu-Jiuh Torng , Rongfu Xiao , Adam Zhong , Wai-Ming Johnson Kan , Daniel Liu
发明人： Tom Zhong , Chyu-Jiuh Torng , Rongfu Xiao , Adam Zhong , Wai-Ming Johnson Kan , Daniel Liu
IPC分类号： H01L21/00
CPC分类号： H01L27/228 , H01L43/12
摘要： A STT-MRAM integration scheme is disclosed wherein the connection between a MTJ and CMOS metal is simplified by forming an intermediate via contact (VAC) on a CMOS landing pad, a metal (VAM) pad that contacts and covers the VAC, and a MTJ on the VAM. A dual damascene process is performed to connect BIT line metal to CMOS landing pads through VAC/VAM/MTJ stacks in a device region, and to connect BIT line connection pads to CMOS connection pads through BIT connection vias outside the device region. The VAM pad is a single layer or composite made of Ta, TaN, or other conductors which serves as a diffusion barrier, has a highly smooth surface for MTJ formation, and provides excellent selectivity with refill dielectric materials during a chemical mechanical polish process. Each VAC is from 500 to 3000 Angstroms thick to minimize additional circuit resistance and minimize etch burden.

99. 发明授权

US07950136B2 Process of making an improved AP1 layer for a TMR device 有权
标题翻译：为TMR设备制造改进的AP1层的过程
公开(公告)号：US07950136B2
公开(公告)日：2011-05-31
申请号：US12152058
申请日：2008-05-12
申请人： Tong Zhao , Chyu-Jiuh Torng , Hui-Chuan Wang
发明人： Tong Zhao , Chyu-Jiuh Torng , Hui-Chuan Wang
IPC分类号： G11B5/187 , C23F1/12
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3163 , G11B5/3903 , G11B5/3909 , H01F10/3272 , H01F41/303 , H01L43/12 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A process to manufacturing a TMR read head with improved voltage breakdown is performed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next layer is deposited. This results in a smooth surface, onto which to deposit the tunneling barrier layer, with no disruption of the surface crystal structure of the completed AP1 layer.
摘要翻译：通过将AP1层铺设为两层或更多层来进行制造具有改善的电压击穿的TMR读取头的工艺。在下一层沉积之前，每个AP1子层在短时间内暴露于低能量等离子体。这导致在其上沉积隧道势垒层的光滑表面，而不破坏完成的AP1层的表面晶体结构。

100. 发明申请

US20100261295A1 High performance MTJ element for STT-RAM and method for making the same 有权
标题翻译：用于STT-RAM的高性能MTJ元件和制作相同的方法
公开(公告)号：US20100261295A1
公开(公告)日：2010-10-14
申请号：US12803190
申请日：2010-06-21
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L21/8246
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3272 , H01F10/329 , H01F10/3295 , H01F41/307 , H01L43/10 , H01L43/12
摘要： A method of forming a STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that comprises an amorphous layer of Co60Fe20B20.of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.
摘要翻译：形成利用自旋角动量转移的STT-MTJ MRAM单元的形成方法，作为改变自由层的磁矩方向的机构。该器件包括形成在被钉扎层的Ar离子等离子体平滑表面上的IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧道势垒层，在一个实施例中，包含非晶态的自由层分别在3和6埃厚度的Fe的两个结晶层之间形成大约20埃厚度的Co60Fe20B20的层。自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

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