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    • 91. 发明授权
    • Apparatus and method for setting macro of remote control
    • 用于设置遥控器宏的装置和方法
    • US07525473B2
    • 2009-04-28
    • US11030331
    • 2005-01-07
    • Chang-nam ChuHee-min Kwon
    • Chang-nam ChuHee-min Kwon
    • H04L17/02
    • G08C17/00G08C2201/21G08C2201/33G08C2201/41
    • An apparatus and method for easily setting a macro of a programmable remote control using a PC. The apparatus setting a macro of a remote control including: an input unit, inputting data or commands; a display unit displaying the data input by the user and/or data that is able to be selected by the user; a data transceiver receiving data from the remote control and transmitting data to the remote control; a memory storing device names assigned by the user and a data file of device function control commands received from the remote control via the data transceiver; and a controller displaying on the display unit a list of the device names and the commands included in the data file stored in the memory and setting a command selected from the command list as a macro command corresponding to a macro name.
    • 一种用于使用PC容易地设置可编程遥控器的宏的装置和方法。 该设备设置遥控器的宏,包括:输入单元,输入数据或命令; 显示由用户输入的数据和/或能够由用户选择的数据的显示单元; 数据收发器从遥控器接收数据并向遥控器发送数据; 由用户分配的存储设备名称的存储器和经由数据收发器从遥控器接收的设备功能控制命令的数据文件; 以及控制器,在显示单元上显示包含在存储在存储器中的数据文件中的设备名称和命令的列表,并且将从命令列表中选择的命令设置为与宏名称对应的宏命令。
    • 92. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20080308895A1
    • 2008-12-18
    • US12222794
    • 2008-08-15
    • Chang Nam Kim
    • Chang Nam Kim
    • H01L29/00
    • H01L21/76232H01L21/823462H01L21/823481
    • A semiconductor device and fabricating method thereof are provided. A dual gate oxide layer is formed by thermal oxidation after carrying out a prescribed pre-processing on an STI edge, which results in a high quality oxide layer by thermal oxidation and a uniformly maintained gate oxide layer thickness of a high voltage device area. The present invention includes a semiconductor substrate divided into an active area and an inactive area, the active area including a high voltage device area and a low voltage device area; a device isolation layer on the inactive area of the semiconductor substrate; and a gate oxide layer on the high voltage device area of the semiconductor substrate, the gate oxide layer having a uniform thickness.
    • 提供了一种半导体器件及其制造方法。 在STI边缘上进行规定的预处理后,通过热氧化形成双栅氧化层,通过热氧化形成高质量的氧化物层,并且均匀维持高电压器件面积的栅氧化层厚度。 本发明包括分为有源区和非工作区的半导体衬底,有源区包括高电压器件面积和低电压器件面积; 半导体衬底的非活性区域上的器件隔离层; 以及在半导体衬底的高电压器件区域上的栅氧化层,栅氧化层具有均匀的厚度。