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1. 发明授权

US06509587B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06509587B2
公开(公告)日：2003-01-21
申请号：US09955144
申请日：2001-09-19
申请人： Naoharu Sugiyama , Tsutomu Tezuka , Tomohisa Mizuno , Shinichi Takagi
发明人： Naoharu Sugiyama , Tsutomu Tezuka , Tomohisa Mizuno , Shinichi Takagi
IPC分类号： H01L350328
CPC分类号： H01L27/1203 , H01L21/84
摘要： High-speed and low-power-consuming transistors such as field effect transistors having strained Si channels and hetero-bipolar transistors are integrated with each other. Used here is a complex structure in which an MOSFET having a thin-film SiGe buffer layer and a strained Si channel are laminated on an insulating film and an HBT having an SiGe base layer formed on a thin-film SiGe layer by epitaxial growth and an Si emitter layer formed on the SiGe base layer are combined with each other. The thin-film SiGe layer formed on the insulating film of the MOSFET is made thinner than the counterpart of the HBT. The thin-film SiGe layer formed on the insulating film of the MOSFET has Ge concentration higher than that of the counterpart of the HBT.
摘要翻译：诸如具有应变Si沟道和异质双极晶体管的场效应晶体管的高速和低功耗晶体管彼此集成。这里使用的是这样的复杂结构，其中具有薄膜SiGe缓冲层和应变Si沟道的MOSFET层叠在绝缘膜上，并且通过外延生长在薄膜SiGe层上形成具有SiGe基层的HBT，形成在SiGe基底层上的Si发射极层彼此结合。在MOSFET的绝缘膜上形成的薄膜SiGe层比HBT的对应物薄。在MOSFET的绝缘膜上形成的薄膜SiGe层的Ge浓度高于HBT的绝缘膜。

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