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2. 发明授权

US07214558B2 Method for forming patterns on a semiconductor device using a lift off technique 失效
标题翻译：使用剥离技术在半导体器件上形成图案的方法
公开(公告)号：US07214558B2
公开(公告)日：2007-05-08
申请号：US11257060
申请日：2005-10-25
申请人： Atsushi Kurokawa , Hiroshi Inagawa , Toshiaki Kitahara , Yoshinori Imamura
发明人： Atsushi Kurokawa , Hiroshi Inagawa , Toshiaki Kitahara , Yoshinori Imamura
IPC分类号： H01L21/00 , H01L21/8235
CPC分类号： H01L29/66318 , H01L29/0657 , H01L29/41708 , H01L29/42304 , H01L29/7371
摘要： Provided is a technique of improving the properties of a bipolar transistor. Described specifically, upon formation of a collector electrode around a base mesa by the lift-off method, a resist film is formed over connection portions between the outer periphery of a region OA1 and a region in which the base mesa 4a is formed, followed by successive formation of gold germanium (AuGe), nickel (Ni) and Au in the order of mention over the entire surface of a substrate so that the stacked film of them will not become an isolated pattern. As a result, the stacked film over the base mesa 4a is connected to a stacked film at the outer periphery of the region OA1, facilitating peeling of the stacked film over the base mesa 4a. In addition, generation of side etching upon formation of a via hole extending from the back side of the substrate to a backside via electrode is reduced by forming the backside via electrode using a material such as WSi which hardly reacts with an n type GaAs layer or n type InGaAs layer.
摘要翻译：提供了改进双极晶体管的性质的技术。具体地说，通过剥离法在基台周围形成集电极时，在区域OA1的外周与形成有基台面4a的区域之间的连接部分上形成抗蚀剂膜，随后在衬底的整个表面上依次形成金锗（AuGe），镍（Ni）和Au，使得它们的堆叠膜不会变成隔离图案。结果，基底台面4a上的层叠膜在区域OA1的外周与层叠膜连接，有利于层叠膜在基台面4a上的剥离。此外，通过使用几乎不与n型GaAs层反应的诸如WSi的材料形成背面通孔电极来减少形成从基板的背面延伸到背面通孔电极的通孔形成侧面蚀刻，或 n型InGaAs层。

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