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1. 发明申请

US20110140075A1 LIGHT-EMITTING DEVICE INCLUDING QUANTUM DOTS 有权
标题翻译：发光装置，包括量子点
公开(公告)号：US20110140075A1
公开(公告)日：2011-06-16
申请号：US12896856
申请日：2010-10-02
申请人： Zhaoqun ZHOU , Peter T. Kazlas , Mead Misic , Zoran Popovic , John Spencer Morris
发明人： Zhaoqun ZHOU , Peter T. Kazlas , Mead Misic , Zoran Popovic , John Spencer Morris
IPC分类号： H01L33/04 , B82Y99/00
CPC分类号： H01L51/5012 , B82Y20/00 , H01L51/5048 , H01L51/5088 , H01L2251/552
摘要： A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injection electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting holes, a layer comprising a hole injection material, and an anode. In certain embodiments, the hole injection material can be a p-type doped hole transport material. In certain preferred embodiments, quantum dots comprise semiconductor nanocrystals. In another aspect of the invention, there is provided a light emitting device wherein the device has an initial turn-on voltage that is not greater than 1240/λ, wherein λ represents the wavelength (nm) of light emitted by the emissive layer. Other light emitting devices and a method are disclosed.
摘要翻译：公开了包括包含量子点的发射材料的发光器件。在一个实施例中，该器件包括阴极，包含能够传输和注入包含无机材料的电子的材料的层，包含量子点的发射层，包含能够传输空穴的材料的层，包括空穴注入材料，和阳极。在某些实施例中，空穴注入材料可以是p型掺杂的空穴传输材料。在某些优选实施例中，量子点包括半导体纳米晶体。在本发明的另一方面，提供了一种发光器件，其中器件具有不大于1240 /λ的初始导通电压，其中λ表示由发射层发射的光的波长（nm）。公开了其它发光器件和方法。

2. 发明授权

US09793505B2 Light-emitting device including quantum dots 有权
公开(公告)号：US09793505B2
公开(公告)日：2017-10-17
申请号：US12896856
申请日：2010-10-02
申请人： Zhaoqun Zhou , Peter T. Kazlas , Mead Misic , Zoran Popovic , John Spencer Morris
发明人： Zhaoqun Zhou , Peter T. Kazlas , Mead Misic , Zoran Popovic , John Spencer Morris
IPC分类号： H01L33/04 , B82Y99/00 , H01L51/50 , B82Y20/00
CPC分类号： H01L51/5012 , B82Y20/00 , H01L51/5048 , H01L51/5088 , H01L2251/552
摘要： A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injection electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting holes, a layer comprising a hole injection material, and an anode. In certain embodiments, the hole injection material can be a p-type doped hole transport material. In certain preferred embodiments, quantum dots comprise semiconductor nanocrystals. In another aspect of the invention, there is provided a light emitting device wherein the device has an initial turn-on voltage that is not greater than 1240/λ, wherein λ represents the wavelength (nm) of light emitted by the emissive layer. Other light emitting devices and a method are disclosed.

3. 发明申请

US20100051901A1 Light emitting devices and displays with improved performance 审中-公开
标题翻译：具有改进性能的发光器件和显示器
公开(公告)号：US20100051901A1
公开(公告)日：2010-03-04
申请号：US12454705
申请日：2009-05-21
申请人： Peter T. Kazlas , Marshall Cox , Seth Coe-Sullivan , Dorai Ramprasad , Jonathan S. Steckel , Craig Breen , Caroline J. Roush , Mead Misic
发明人： Peter T. Kazlas , Marshall Cox , Seth Coe-Sullivan , Dorai Ramprasad , Jonathan S. Steckel , Craig Breen , Caroline J. Roush , Mead Misic
IPC分类号： H01L33/00
CPC分类号： C09K11/565 , B82Y20/00 , B82Y30/00 , H01L51/5012 , H05B33/14
摘要： Light emitting devices and devices with improved performance are disclosed. In one embodiment, a light emitting device includes an emissive material disposed between a first electrode, and a second electrode, wherein the emissive material comprises semiconductor nanocrystals capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation, wherein the light emitting device can have a peak external quantum efficiency of at least about 1.0 percent. Also disclosed is a display including at least one light emitting device including an emissive material disposed between a first electrode, and a second electrode, wherein the at least one light emitting device can have a peak external quantum efficiency of at least about 1.0 percent. In another embodiment, a light emitting device includes an emissive material disposed between a first electrode and a second electrode. The emissive material comprises semiconductor nanocrystals capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation. The device further includes a first spacer material disposed between the emissive material and the first electrode. In certain embodiments, the device further includes a first material capable of transporting charge disposed between the emissive material and the first electrode, wherein the first spacer material is disposed between the emissive material and the first electrode. In certain embodiments, for example, light emitting devices can have a maximum peak emission in a range from about 380 nm to about 500 nm. In certain embodiments, the light emitting device can have a maximum peak emission peak in the range from about 450 nm to about 490 nm. Displays including light emitting devices are also disclosed.
摘要翻译：公开了具有改进性能的发光器件和器件。在一个实施例中，发光器件包括设置在第一电极和第二电极之间的发光材料，其中发射材料包含能够发射包括在激发的光谱的蓝色区域中的最大峰值发射的光的半导体纳米晶体，其中发光器件可以具有至少约1.0％的峰值外部量子效率。还公开了一种显示器，其包括至少一个包括设置在第一电极和第二电极之间的发光材料的发光器件，其中所述至少一个发光器件可以具有至少约1.0％的峰值外部量子效率。在另一个实施例中，发光器件包括设置在第一电极和第二电极之间的发光材料。发射材料包括能够发射光的半导体纳米晶体，其包括在激发时在光谱的蓝色区域中的最大峰值发射。该装置还包括设置在发光材料和第一电极之间的第一间隔物材料。在某些实施例中，该装置还包括能够传输设置在发射材料和第一电极之间的电荷的第一材料，其中第一间隔物材料设置在发光材料和第一电极之间。在某些实施例中，例如，发光器件可以具有在约380nm至约500nm范围内的最大峰值发射。在某些实施方案中，发光器件可具有在约450nm至约490nm范围内的最大峰值发射峰值。还公开了包括发光器件的显示器。

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