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1. 发明申请

US20140057457A1 Non-melt thin-wafer laser thermal annealing methods 有权
标题翻译：非熔化薄晶片激光热退火方法
公开(公告)号：US20140057457A1
公开(公告)日：2014-02-27
申请号：US13595873
申请日：2012-08-27
申请人： Yun Wang , Andrew M. Hawryluk , Xiaoru Wang , Xiaohua Shen
发明人： Yun Wang , Andrew M. Hawryluk , Xiaoru Wang , Xiaohua Shen
IPC分类号： H01L21/268 , H01L21/02
CPC分类号： H01L21/268 , H01L21/02107 , H01L21/28518 , H01L27/14634 , H01L27/1469
摘要： Methods of annealing a thin semiconductor wafer are disclosed. The methods allow for high-temperature annealing of one side of a thin semiconductor wafer without damaging or overheating heat-sensitive electronic device features that are either on the other side of the wafer or embedded within the wafer. The annealing is performed at a temperature below the melting point of the wafer so that no significant dopant redistribution occurs during the annealing process. The methods can be applied to activating dopants or to forming ohmic contacts.
摘要翻译：公开了薄半导体晶片的退火方法。该方法允许薄半导体晶片的一侧进行高温退火，而不会损坏或过热晶片另一侧或嵌入晶片内的热敏电子器件特征。在低于晶片的熔点的温度下进行退火，使得在退火过程中不会发生显着的掺杂剂再分布。该方法可用于活化掺杂剂或形成欧姆接触。

2. 发明授权

US09490128B2 Non-melt thin-wafer laser thermal annealing methods 有权
标题翻译：非熔化薄晶片激光热退火方法
公开(公告)号：US09490128B2
公开(公告)日：2016-11-08
申请号：US13595873
申请日：2012-08-27
申请人： Yun Wang , Andrew M. Hawryluk , Xiaoru Wang , Xiaohua Shen
发明人： Yun Wang , Andrew M. Hawryluk , Xiaoru Wang , Xiaohua Shen
IPC分类号： H01L21/268 , H01L27/146 , H01L21/02 , H01L21/285
CPC分类号： H01L21/268 , H01L21/02107 , H01L21/28518 , H01L27/14634 , H01L27/1469
摘要： Methods of annealing a thin semiconductor wafer are disclosed. The methods allow for high-temperature annealing of one side of a thin semiconductor wafer without damaging or overheating heat-sensitive electronic device features that are either on the other side of the wafer or embedded within the wafer. The annealing is performed at a temperature below the melting point of the wafer so that no significant dopant redistribution occurs during the annealing process. The methods can be applied to activating dopants or to forming ohmic contacts.
摘要翻译：公开了薄半导体晶片的退火方法。该方法允许对薄半导体晶片的一侧进行高温退火，而不会损坏或过热晶片另一侧或嵌入晶片内的热敏电子器件特征。在低于晶片的熔点的温度下进行退火，使得在退火过程中不会发生显着的掺杂剂再分布。该方法可用于活化掺杂剂或形成欧姆接触。

3. 发明申请

US20130196455A1 TWO-BEAM LASER ANNEALING WITH IMPROVED TEMPERATURE PERFORMANCE 有权
标题翻译：具有改善温度性能的双光束激光退火
公开(公告)号：US20130196455A1
公开(公告)日：2013-08-01
申请号：US13359936
申请日：2012-01-27
申请人： Xiaohua Shen , Yun Wang , Xiaoru Wang
发明人： Xiaohua Shen , Yun Wang , Xiaoru Wang
IPC分类号： H01L21/66 , H05B1/00 , H01L21/263
CPC分类号： H01L21/2636 , B23K26/0608 , B23K26/0732 , B23K26/08 , B23K2101/40 , G01N21/55 , H01L21/268 , H01L21/324 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： Systems and methods are disclosed for performing laser annealing in a manner that reduces or minimizes wafer surface temperature variations during the laser annealing process. The systems and methods include annealing the wafer surface with first and second laser beams that represent preheat and anneal laser beams having respective first and second intensities. The preheat laser beam brings the wafer surface temperate close to the annealing temperature and the anneal laser beam brings the wafer surface temperature up to the annealing temperature. The anneal laser beam can have a different wavelength, or the same wavelength but different orientation relative to the wafer surface. Reflectivity maps of the wafer surface at the preheat and anneal wavelengths are measured and used to select first and second intensities that ensure good anneal temperature uniformity as a function of wafer position.
摘要翻译：公开了以在减少或最小化激光退火过程中的晶片表面温度变化的方式进行激光退火的系统和方法。这些系统和方法包括用表示具有相应的第一和第二强度的预热和退火激光束的第一和第二激光束退火晶片表面。预热激光束使晶片表面温度接近退火温度，退火激光束使晶片表面温度达到退火温度。退火激光束可以具有相对于晶片表面的不同波长或相同波长但不同的取向。在预热和退火波长处的晶片表面的反射率图被测量并用于选择第一和第二强度，其确保作为晶片位置的函数的良好的退火温度均匀性。

4. 发明授权

US08546805B2 Two-beam laser annealing with improved temperature performance 有权
标题翻译：双光束激光退火具有改善的温度性能
公开(公告)号：US08546805B2
公开(公告)日：2013-10-01
申请号：US13359936
申请日：2012-01-27
申请人： Xiaohua Shen , Yun Wang , Xiaoru Wang
发明人： Xiaohua Shen , Yun Wang , Xiaoru Wang
IPC分类号： H01L29/04 , H01L31/20 , H01L31/036 , H01L31/0376
CPC分类号： H01L21/2636 , B23K26/0608 , B23K26/0732 , B23K26/08 , B23K2101/40 , G01N21/55 , H01L21/268 , H01L21/324 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： Systems and methods are disclosed for performing laser annealing in a manner that reduces or minimizes wafer surface temperature variations during the laser annealing process. The systems and methods include annealing the wafer surface with first and second laser beams that represent preheat and anneal laser beams having respective first and second intensities. The preheat laser beam brings the wafer surface temperate close to the annealing temperature and the anneal laser beam brings the wafer surface temperature up to the annealing temperature. The anneal laser beam can have a different wavelength, or the same wavelength but different orientation relative to the wafer surface. Reflectivity maps of the wafer surface at the preheat and anneal wavelengths are measured and used to select first and second intensities that ensure good anneal temperature uniformity as a function of wafer position.
摘要翻译：公开了以在减少或最小化激光退火过程中的晶片表面温度变化的方式进行激光退火的系统和方法。这些系统和方法包括用表示具有相应的第一和第二强度的预热和退火激光束的第一和第二激光束退火晶片表面。预热激光束使晶片表面温度接近退火温度，退火激光束使晶片表面温度达到退火温度。退火激光束可以具有相对于晶片表面的不同波长或相同波长但不同的取向。在预热和退火波长处的晶片表面的反射率图被测量并用于选择第一和第二强度，其确保作为晶片位置的函数的良好的退火温度均匀性。

5. 发明授权

US09190570B2 Laser annealing of GaN LEDs with reduced pattern effects 有权
标题翻译：具有减少图案效果的GaN LED的激光退火
公开(公告)号：US09190570B2
公开(公告)日：2015-11-17
申请号：US13678946
申请日：2012-11-16
申请人： Andrew M. Hawryluk , Yun Wang
发明人： Andrew M. Hawryluk , Yun Wang
IPC分类号： H01L29/10 , H01L29/76 , H01L31/036 , H01L31/112 , H01L33/32 , H01L33/38 , H01L33/00
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/0095 , H01L33/38
摘要： The disclosure is directed to laser annealing of GaN light-emitting diodes (LEDs) with reduced pattern effects. A method includes forming elongate conductive structures atop either an n-GaN layer or a p-GaN layer of a GaN LED structure, the elongate conductive structures having long and short dimensions, and being spaced apart and substantially aligned in the long dimensions. The method also includes generating a P-polarized anneal laser beam that has an anneal wavelength that is greater than the short dimension. The method also includes irradiating either the n-GaN layer or the p-GaN layer of the GaN LED structure through the conductive structures with the P-polarized anneal laser beam, including directing the anneal laser beam relative to the conductive structures so that the polarization direction is perpendicular to the long dimension of the conductive structures.
摘要翻译：本发明涉及具有减小的图案效应的GaN发光二极管（LED）的激光退火。一种方法包括在GaN LED结构的n-GaN层或p-GaN层顶上形成细长的导电结构，细长的导电结构具有长和短的尺寸，并且在长尺寸上间隔开并基本对准。该方法还包括产生具有大于短尺寸的退火波长的P偏振退火激光束。该方法还包括通过具有P偏振退火激光束的导电结构照射GaN LED结构的n-GaN层或p-GaN层，包括相对于导电结构引导退火激光束使得极化方向垂直于导电结构的长尺寸。

6. 发明授权

US08658451B2 Activating GaN LEDs by laser spike annealing and flash annealing 有权
标题翻译：通过激光尖峰退火和闪光退火激活GaN LED
公开(公告)号：US08658451B2
公开(公告)日：2014-02-25
申请号：US13136019
申请日：2011-07-20
申请人： Yun Wang , Andrew M. Hawryluk
发明人： Yun Wang , Andrew M. Hawryluk
IPC分类号： H01L21/00
CPC分类号： H01L33/42 , H01L33/0095 , H01L33/32 , H01L2933/0016
摘要： Methods of performing fast thermal annealing in forming GaN light-emitting diodes (LEDs) are disclosed, as are GaN LEDs formed using fast thermal annealing. An exemplary method includes forming a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer. The method includes performing fast thermal annealing of the p-GaN layer using either a laser or a flash lamp. The method further includes forming a transparent conducting layer atop the GaN multilayer structure, and adding a p-contact to the transparent conducting layer and a n-contact to the n-GaN layer. The resultant GaN LEDs have enhanced output power, lower turn-on voltage and reduced series resistance.
摘要翻译：公开了在形成GaN发光二极管（LED）中执行快速热退火的方法，以及使用快速热退火形成的GaN LED。一种示例性的方法包括形成具有n-GaN层的GaN多层结构和夹持有源层的p-GaN层。该方法包括使用激光或闪光灯来进行p-GaN层的快速热退火。所述方法还包括在所述GaN多层结构顶部形成透明导电层，以及向所述n-GaN层向所述透明导电层添加p接触和n接触。所得GaN LED具有增强的输出功率，较低的导通电压和降低的串联电阻。

7. 发明授权

US08460959B2 Fast thermal annealing of GaN LEDs 有权
标题翻译： GaN LED快速热退火
公开(公告)号：US08460959B2
公开(公告)日：2013-06-11
申请号：US13199276
申请日：2011-08-24
申请人： Yun Wang , Andrew M. Hawryluk
发明人： Yun Wang , Andrew M. Hawryluk
IPC分类号： H01L21/00
CPC分类号： H01L33/0095 , H01L33/32 , H01L33/40 , H01L2933/0016
摘要： Methods of performing fast thermal annealing in forming GaN light-emitting diodes (LEDs) are disclosed, as are GaN LEDs formed using fast thermal annealing having a time duration of 10 seconds or faster. An exemplary method includes forming a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer. The method includes performing fast thermal annealing of the p-GaN layer using either a laser or a flash lamp. The method further includes forming a transparent conducting layer atop the GaN multilayer structure, and adding a p-contact to the transparent conducting layer and a n-contact to the n-GaN layer. The resultant GaN LEDs have enhanced output power, lower turn-on voltage and reduced series resistance.
摘要翻译：公开了在形成GaN发光二极管（LED）中执行快速热退火的方法，以及使用10秒或更快的持续时间的快速热退火形成的GaN LED。一种示例性的方法包括形成具有n-GaN层的GaN多层结构和夹持有源层的p-GaN层。该方法包括使用激光或闪光灯来进行p-GaN层的快速热退火。所述方法还包括在所述GaN多层结构顶部形成透明导电层，以及向所述n-GaN层向所述透明导电层添加p接触和n接触。所得GaN LED具有增强的输出功率，较低的导通电压和降低的串联电阻。

8. 发明申请

US20110309374A1 Fast thermal annealing of GaN LEDs 有权
标题翻译： GaN LED快速热退火
公开(公告)号：US20110309374A1
公开(公告)日：2011-12-22
申请号：US13199276
申请日：2011-08-24
申请人： Yun Wang , Andrew M. Hawryluk
发明人： Yun Wang , Andrew M. Hawryluk
IPC分类号： H01L33/02
CPC分类号： H01L33/0095 , H01L33/32 , H01L33/40 , H01L2933/0016
摘要： Methods of performing fast thermal annealing in forming GaN light-emitting diodes (LEDs) are disclosed, as are GaN LEDs formed using fast thermal annealing having a time duration of 10 seconds or faster. An exemplary method includes forming a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer. The method includes performing fast thermal annealing of the p-GaN layer using either a laser or a flash lamp. The method further includes forming a transparent conducting layer atop the GaN multilayer structure, and adding a p-contact to the transparent conducting layer and a n-contact to the n-GaN layer. The resultant GaN LEDs have enhanced output power, lower turn-on voltage and reduced series resistance.
摘要翻译：公开了在形成GaN发光二极管（LED）中执行快速热退火的方法，以及使用10秒或更快的持续时间的快速热退火形成的GaN LED。一种示例性的方法包括形成具有n-GaN层的GaN多层结构和夹持有源层的p-GaN层。该方法包括使用激光或闪光灯来进行p-GaN层的快速热退火。所述方法还包括在所述GaN多层结构顶部形成透明导电层，以及向所述n-GaN层向所述透明导电层添加p接触和n接触。所得GaN LED具有增强的输出功率，较低的导通电压和降低的串联电阻。

9. 发明申请

US20140131723A1 LASER ANNEALING OF GAN LEDS WITH REDUCED PATTERN EFFECTS 有权
标题翻译：具有减少图案效果的GAN LED的激光退火
公开(公告)号：US20140131723A1
公开(公告)日：2014-05-15
申请号：US13678946
申请日：2012-11-16
申请人： Andrew M. Hawryluk , Yun Wang
发明人： Andrew M. Hawryluk , Yun Wang
IPC分类号： H01L33/32 , H01L33/00
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/0095 , H01L33/38
摘要： The disclosure is directed to laser annealing of GaN light-emitting diodes (LEDs) with reduced pattern effects. A method includes forming elongate conductive structures atop either an n-GaN layer or a p-GaN layer of a GaN LED structure, the elongate conductive structures having long and short dimensions, and being spaced apart and substantially aligned in the long dimensions. The method also includes generating a P-polarized anneal laser beam that has an anneal wavelength that is greater than the short dimension. The method also includes irradiating either the n-GaN layer or the p-GaN layer of the GaN LED structure through the conductive structures with the P-polarized anneal laser beam, including directing the anneal laser beam relative to the conductive structures so that the polarization direction is perpendicular to the long dimension of the conductive structures.
摘要翻译：本发明涉及具有减小的图案效应的GaN发光二极管（LED）的激光退火。一种方法包括在GaN LED结构的n-GaN层或p-GaN层顶上形成细长的导电结构，细长的导电结构具有长和短的尺寸，并且在长尺寸上间隔开并基本对准。该方法还包括产生具有大于短尺寸的退火波长的P偏振退火激光束。该方法还包括通过具有P偏振退火激光束的导电结构照射GaN LED结构的n-GaN层或p-GaN层，包括相对于导电结构引导退火激光束使得极化方向垂直于导电结构的长尺寸。

10. 发明申请

US20110108796A1 Laser spike annealing for GaN LEDs 有权
标题翻译： GaN LED激光尖峰退火
公开(公告)号：US20110108796A1
公开(公告)日：2011-05-12
申请号：US12590360
申请日：2009-11-06
申请人： Yun Wang , Andrew M. Hawryluk
发明人： Yun Wang , Andrew M. Hawryluk
IPC分类号： H01L33/00
CPC分类号： H01L33/0095 , H01L33/007 , H01L33/025 , H01L33/42
摘要： Methods of performing laser spike annealing (LSA) in forming gallium nitride (GaN) light-emitting diodes (LEDs) as well as GaN LEDs formed using LSA are disclosed. An exemplary method includes forming atop a substrate a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer. The method also includes performing LSA by scanning a laser beam over the p-GaN layer. The method further includes forming a transparent conducting layer atop the GaN multilayer structure, and adding a p-contact to the transparent conducting layer and a n-contact to the n-GaN layer. The resultant GaN LEDs have enhanced output power, lower turn-on voltage and reduced series resistance.
摘要翻译：公开了在形成氮化镓（GaN）发光二极管（LED）以及使用LSA形成的GaN LED中执行激光尖峰退火（LSA）的方法。一种示例性方法包括在衬底上形成具有n-GaN层的GaN多层结构和夹持有源层的p-GaN层。该方法还包括通过在p-GaN层上扫描激光束来执行LSA。所述方法还包括在所述GaN多层结构顶部形成透明导电层，以及向所述n-GaN层向所述透明导电层添加p接触和n接触。所得GaN LED具有增强的输出功率，较低的导通电压和降低的串联电阻。

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