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1. 发明申请

US20090081513A1 GAS DIFFUSION LAYER, FUEL CELL, METHOD FOR MANUFACTURING GAS DIFFUSION LAYER, AND METHOD FOR MANUFACTURING FUEL CELL 审中-公开
标题翻译：气体扩散层，燃料电池，制造气体扩散层的方法以及制造燃料电池的方法
公开(公告)号：US20090081513A1
公开(公告)日：2009-03-26
申请号：US12210459
申请日：2008-09-15
申请人： Yuji SASAKI , Takahiro TERADA , Yasutada NAKAGAWA , Yuichi YOSHIDA
发明人： Yuji SASAKI , Takahiro TERADA , Yasutada NAKAGAWA , Yuichi YOSHIDA
IPC分类号： H01M8/10 , H01M4/02 , B05D5/12
CPC分类号： H01M8/0234 , H01M8/04119 , H01M8/1009 , H01M8/1011 , H01M2008/1095 , Y02E60/523 , Y02P70/56
摘要： A gas diffusion layer to be provided on an air electrode of a fuel cell, the gas diffusion layer includes: a portion to be at a relatively high temperature; and a portion to be at a relatively low temperature. Gas permeability of the portion to be at a relatively high temperature is different from gas permeability of the portion to be at a relatively low temperature.
摘要翻译：一种设置在燃料电池的空气电极上的气体扩散层，气体扩散层包括：处于较高温度的部分; 以及处于较低温度的部分。处于相对较高温度的部分的气体渗透性不同于处于相对低的温度的部分的气体渗透性。

2. 发明申请

US20090104497A1 FUEL ELECTRODE CATALYST, METHOD FOR PRODUCING FUEL ELECTRODE CATALYST, FUEL CELL, AND METHOD FOR PRODUCING FUEL CELL 审中-公开
标题翻译：燃料电极催化剂，燃料电极催化剂的制造方法，燃料电池及燃料电池的制造方法
公开(公告)号：US20090104497A1
公开(公告)日：2009-04-23
申请号：US12253577
申请日：2008-10-17
申请人： Yuji SASAKI , Takahiro Terada , Yasutada Nakagawa , Hirofumi Kan
发明人： Yuji SASAKI , Takahiro Terada , Yasutada Nakagawa , Hirofumi Kan
IPC分类号： H01M4/92 , H01M8/10 , B01J23/652 , B01J27/20 , H01M4/88
CPC分类号： H01M4/921 , B01J23/652 , H01M4/8842 , H01M2008/1095 , Y10T29/49108
摘要： A fuel electrode catalyst includes: a solid solution of platinum (Pt) and molybdenum (Mo), a crystal structure of the solid solution being a face-centered cubic structure, and a component ratio of the molybdenum (Mo) in the solid solution being from 10 atom % (at %) to 20 atom % (at %), and a method for producing a fuel electrode catalyst, includes: generating platinum hydrate and molybdenum oxide from chloroplatinic acid (H2PtCl6) and sodium molybdate dihydrate (Na2MoO4.2H2O); reducing the platinum hydrate and the molybdenum oxide; and therewith solid-solving molybdenum (Mo) into platinum (Pt).
摘要翻译：燃料电极催化剂包括：铂（Pt）和钼（Mo）的固溶体，固溶体的晶体结构为面心立方结构，固溶体中的钼（Mo）的组分比为 10原子％（原子％）〜20原子％（原子％），以及燃料电极催化剂的制造方法，包括：从氯铂酸（H2PtCl6）和钼酸钠二水合物（Na2MoO4.2H2O）中生成铂水合物和氧化钼， ; 还原铂金水合物和氧化钼; 并将固溶钼（Mo）制成铂（Pt）。

3. 发明申请

US20100136796A1 SUBSTRATE HOLDING MEMBER, IMMERSION TYPE EXPOSURE DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：基板保持构件，浸入式接触装置及制造半导体装置的方法
公开(公告)号：US20100136796A1
公开(公告)日：2010-06-03
申请号：US12628800
申请日：2009-12-01
申请人： Masayuki HATANO , Takuya KONO , Yasutada NAKAGAWA , Yuji SASAKI
发明人： Masayuki HATANO , Takuya KONO , Yasutada NAKAGAWA , Yuji SASAKI
IPC分类号： H01L21/30 , G03B27/58
CPC分类号： G03F7/70341 , G03F7/707
摘要： A substrate holding member according to an embodiment includes an opening having a minimum internal diameter lager than a diameter of a space in which a substrate to be exposed on a substrate stage is disposed, wherein an inner peripheral surface of the opening has a shape expanding toward a lower surface at least partly.
摘要翻译：根据实施例的基板保持构件包括具有最小内径的开口，该开口比设置在基板载台上要暴露的基板的空间的直径大，该开口的内周面具有朝向至少部分地是下表面。

4. 发明申请

US20130029466A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130029466A1
公开(公告)日：2013-01-31
申请号：US13632853
申请日：2012-10-01
申请人： Hiroki HOZUMI , Yuji SASAKI , Shusaku YANAGAWA
发明人： Hiroki HOZUMI , Yuji SASAKI , Shusaku YANAGAWA
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/045 , H01L29/0619 , H01L29/0634 , H01L29/0638 , H01L29/0696 , H01L29/1095 , H01L29/4238 , H01L29/66734 , H01L29/7811
摘要： Disclosed herein is a semiconductor device, including: a first semiconductor region of a first conductivity type; a second semiconductor region having pairs of first pillar regions of the first conductivity type, and second pillar regions of a second conductivity type alternately provided; a third semiconductor region of the second conductivity type; a fourth semiconductor region of the first conductivity type; and control electrodes each provided within a trench through an insulating film, a sidewall of the trench being formed so as to contact each of the third semiconductor region and the fourth semiconductor region.
摘要翻译：本文公开了一种半导体器件，包括：第一导电类型的第一半导体区域; 具有交替设置的具有第一导电类型的第一支柱区域和第二导电类型的第二柱状区域的第二半导体区域; 第二导电类型的第三半导体区域; 第一导电类型的第四半导体区域; 以及控制电极，每个控制电极通过绝缘膜设置在沟槽内，所述沟槽的侧壁形成为与第三半导体区域和第四半导体区域接触。

5. 发明申请

US20110303187A1 IGNITION TIMING CONTROLLER FOR INTERNAL COMBUSTION ENGINE 失效
标题翻译：点火时间控制器内燃机
公开(公告)号：US20110303187A1
公开(公告)日：2011-12-15
申请号：US13153737
申请日：2011-06-06
申请人： Yuji SASAKI
发明人： Yuji SASAKI
IPC分类号： G01L23/22 , F02P5/15
CPC分类号： F02P5/152 , Y02T10/46
摘要： An ignition timing controller for an engine includes basic knock-limit ignition timing calculation means that calculates a basic knock-limit ignition timing on the basis of an operating state of the engine; learning-region variation calculation means that learns the knock-limit ignition timing of the engine in two operating regions and thereby calculates a learning-region variation due to octane number and a learning-region variation due to humidity in one of the operating regions; estimated variation calculation means that estimates a variation due to octane number and a variation due to humidity in a present operating state on the basis of the learning-region variation due to octane number and the learning-region variation due to humidity; and knock-limit ignition timing calculation means that calculates the knock-limit ignition timing in the present operating state on the basis of the basic knock-limit ignition timing, the variation due to octane number, and the variation due to humidity.
摘要翻译：用于发动机的点火正时控制器包括：基本爆震极限点火正时计算装置，其基于发动机的运行状态计算基本的极限点火正时; 学习区域变化计算装置，其学习两个操作区域中的发动机的极限点火正时，从而计算由于辛烷值的学习区域变化和由于一个操作区域中的湿度导致的学习区域变化; 估计变化计算装置根据由于辛烷值和由于湿度引起的学习区域变化而导致的学习区域变化，估计在当前操作状态下由于辛烷值和由于湿度引起的变化的变化; 爆燃极限点火正时计算装置，根据基本爆燃极限点火正时，由于辛烷值引起的变化以及由湿度引起的变化，计算当前运行状态下的爆震极限点火正时。

6. 发明申请

US20120070965A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120070965A1
公开(公告)日：2012-03-22
申请号：US13306754
申请日：2011-11-29
申请人： Yuji SASAKI
发明人： Yuji SASAKI
IPC分类号： H01L21/20
CPC分类号： H01L29/0634 , H01L29/0619 , H01L29/063 , H01L29/0696 , H01L29/1095 , H01L29/66712 , H01L29/7811
摘要： A semiconductor device includes a first conductive type first semiconductor region, a second semiconductor region, and a second conductive type lateral RESURF region. The first semiconductor region is arranged on a first electrode side. The second semiconductor region includes first conductive type first pillar regions and a terminal part. The second pillar regions are alternately arranged on an element part. The terminal part is formed around the element part along a surface of the first semiconductor region on a second electrode side opposite to the first electrode side of the first semiconductor region. Furthermore, the second conductive type lateral RESURF region is formed in the second semiconductor region on the terminal part.
摘要翻译：半导体器件包括第一导电类型的第一半导体区域，第二半导体区域和第二导电型侧向RESURF区域。第一半导体区域布置在第一电极侧。第二半导体区域包括第一导电类型的第一支柱区域和端子部分。第二柱区域交替地布置在元件部分上。端子部分沿着与第一半导体区域的第一电极侧相对的第二电极侧的第一半导体区域的表面围绕元件部分形成。此外，第二导电型横向RESURF区域形成在端子部分上的第二半导体区域中。

7. 发明申请

US20120286115A1 UTILITY PART ASSEMBLY FOR MOUNTING UTILITY PART TO VEHICULAR INTERIOR PART 有权
标题翻译：实用部件大会为汽车内部部件安装实用程序
公开(公告)号：US20120286115A1
公开(公告)日：2012-11-15
申请号：US13467276
申请日：2012-05-09
申请人： Hirokazu HIRANO , Yuji SASAKI
发明人： Hirokazu HIRANO , Yuji SASAKI
IPC分类号： B60R11/00
CPC分类号： B60J1/2063 , B60J3/002 , B60J3/005 , B60J3/023 , Y10T24/30 , Y10T24/301 , Y10T24/309 , Y10T24/45105
摘要： A utility part assembly includes a vehicular interior part and a utility part. The vehicular interior part has a first surface and a second surface that is opposite to the first surface and has a first mounting hole and a second mounting hole. The utility part includes a first member provided on the first surface and a second member provided on the second surface. The first member has a first coupling pin and one of a second coupling pin and a first coupling hole, and the second member has a coupling portion that is coupled to the first coupling pin and another one of the second coupling pin and the first coupling hole. The first coupling pin is inserted through the first mounting hole and coupled to the coupling portion, and the second coupling pin is inserted through the second mounting hole and coupled to the first coupling hole.
摘要翻译：实用部件组件包括车辆内部部件和实用部件。车辆内部具有与第一表面相对的第一表面和第二表面，并且具有第一安装孔和第二安装孔。实用部件包括设置在第一表面上的第一构件和设置在第二表面上的第二构件。第一构件具有第一联接销和第二联接销和第一联接孔中的一个，并且第二构件具有联接部分，该联接部分联接到第一联接销，第二联接销和第一联接孔中的另一个。第一联接销插入穿过第一安装孔并联接到联接部分，并且第二联接销插入穿过第二安装孔并联接到第一联接孔。

8. 发明申请

US20120267707A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120267707A1
公开(公告)日：2012-10-25
申请号：US13538688
申请日：2012-06-29
申请人： Yuji SASAKI
发明人： Yuji SASAKI
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0649 , H01L29/0684 , H01L29/0688 , H01L29/1095 , H01L29/32 , H01L29/66712
摘要： Disclosed herein is a semiconductor device including: a first conductivity type semiconductor base body; a first conductivity type pillar region; second conductivity type pillar regions; element and termination regions provided in the first and second conductivity type pillar regions, transistors being formed in the element region, and no transistors being formed in the termination region; body regions; a gate insulating film; gate electrodes; source regions; and body potential extraction regions, wherein voids are formed in the second conductivity type pillar regions of the termination region.
摘要翻译：本发明公开了一种半导体器件，包括：第一导电型半导体基体; 第一导电型支柱区域; 第二导电型支柱区域; 设置在第一和第二导电型柱区域中的元件和端接区域，晶体管形成在元件区域中，并且在端接区域中不形成晶体管; 身体区域栅极绝缘膜; 栅电极; 源区; 以及体电位提取区域，其中在端接区域的第二导电型柱区域中形成空隙。

9. 发明申请

US20100035086A1 IRON NITRIDE MAGNETIC POWDER AND MAGNETIC RECORDING MEDIUM COMPRISING THE SAME 审中-公开
标题翻译：铁氧化物磁粉和包含其的磁记录介质
公开(公告)号：US20100035086A1
公开(公告)日：2010-02-11
申请号：US12534998
申请日：2009-08-04
申请人： Tetsutaro INOUE , Yuji SASAKI
发明人： Tetsutaro INOUE , Yuji SASAKI
IPC分类号： G11B5/39 , G11B5/33 , H01F1/04
CPC分类号： G11B5/70626 , G11B5/712 , G11B5/714 , H01F1/065 , Y10T428/1121 , Y10T428/115
摘要： A spherical or ellipsoidal iron nitride magnetic powder having a core comprising iron nitride including a Fe16N2 phase as a primary phase and an outer layer containing yttrium (Y) and aluminum (Al), in which an average particle size r of the iron nitride magnetic powder is 20 nm or less, an average diameter d of the core is 4 to 10 nm, and a ratio of r to d (r/d) is 2 to 3, and average content of yttrium and aluminum in the outer layer are from 0.9 to 5 atomic % and from 30 to 50 atomic %, respectively, each based on the total number of iron atoms in the iron nitride magnetic powder, and standard deviations of the contents of yttrium and aluminum are 0.6 atomic % or less and 17 atomic % or less, respectively.
摘要翻译：一种球形或椭圆形的氮化铁磁粉，其具有包括含有Fe16N2相作为主相的铁氮化物的芯和包含钇（Y）和铝（Al）的外层，其中，所述氮化铁磁粉的平均粒径r 核心的平均直径d为4〜10nm，r与d（r / d）的比例为2〜3，外层的钇和铝的平均含量为0.9 至5原子％和30至50原子％，分别基于铁氮化物磁性粉末中的铁原子总数，钇和铝的含量的标准偏差为0.6原子％以下，17原子％或更小。

10. 发明申请

US20120301784A1 NONAQUEOUS SECONDARY BATTERY 审中-公开
标题翻译：非标次级电池
公开(公告)号：US20120301784A1
公开(公告)日：2012-11-29
申请号：US13478506
申请日：2012-05-23
申请人： Akira YANO , Yuji SASAKI , Katsunori KOJIMA , Fusaji KITA
发明人： Akira YANO , Yuji SASAKI , Katsunori KOJIMA , Fusaji KITA
IPC分类号： H01M10/052 , H01M4/485 , H01M4/60 , B82Y30/00
CPC分类号： B82Y30/00 , H01M4/131 , H01M4/1391 , H01M4/366 , H01M4/505 , H01M4/625 , H01M4/628 , H01M10/0525 , Y02T10/7011
摘要： The nonaqueous secondary battery of the present invention comprises a positive electrode having a positive electrode mixture layer containing a lithium-containing composite oxide as a positive electrode active material, a negative electrode, a separator, and a nonaqueous electrolyte. The surface of the positive electrode active material or the positive electrode mixture layer is coated with polyvalent organic metal salt, particularly preferably with fluorine-containing polyvalent organic lithium salt.
摘要翻译：本发明的非水系二次电池包括具有含有作为正极活性物质的含锂复合氧化物的正极合剂层的正极，负极，隔膜和非水电解质。正极活性物质或正极合剂层的表面涂覆有多价有机金属盐，特别优选用含氟的多价有机锂盐。

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