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1. 发明授权

US08729881B2 Voltage/current control apparatus and method 有权
标题翻译：电压/电流控制装置及方法
公开(公告)号：US08729881B2
公开(公告)日：2014-05-20
申请号：US13109922
申请日：2011-05-17
申请人： Yu Cheng Chang
发明人： Yu Cheng Chang
IPC分类号： H02M3/156
CPC分类号： H02M3/1588 , H02M2001/0009 , H02M2001/0025 , Y02B70/1466
摘要： A voltage/current control apparatus and method are disclosed. The apparatus includes a low-side field effect transistor (FET) having a source, a gate and a drain, a high-side field effect transistor (FET) having a source, a gate and a drain, a gate driver integrated circuit (IC), a sample and hold circuit, and a comparator configured to produce a trigger signal at the output when a sum of the first and second input signals is equal to a sum of the third and fourth input signals, wherein the trigger signal is configured to trigger a beginning of a new cycle by turning the gate of the high-side FET “on” and the gate of the low-side FET “off”.
摘要翻译：公开了电压/电流控制装置和方法。该装置包括具有源极，栅极和漏极的低侧场效应晶体管（FET），具有源极，栅极和漏极的高侧场效应晶体管（FET），栅极驱动器集成电路（IC ），采样保持电路和比较器，被配置为当第一和第二输入信号的和等于第三和第四输入信号的和时在输出端产生触发信号，其中触发信号被配置为通过使高侧FET的栅极“开”并且低边FET的栅极“关闭”来触发新周期的开始。

2. 发明申请

US20090079409A1 VOLTAGE/CURRENT CONTROL APPARATUS AND METHOD 有权
公开(公告)号：US20090079409A1
公开(公告)日：2009-03-26
申请号：US11861154
申请日：2007-09-25
申请人： Yu Cheng Chang
发明人： Yu Cheng Chang
IPC分类号： G05F1/10
CPC分类号： H02M3/1588 , H02M3/157 , Y02B70/1466
摘要： A voltage/current control apparatus and method are disclosed. The apparatus includes a low-side field effect transistor (FET) having a source, a gate and a drain, a high-side field effect transistor (FET) having a source, a gate and a drain, a gate driver integrated circuit (IC), a sample and hold circuit, and a comparator configured to produce a trigger signal at the output when a sum of the first and second input signals is equal to a sum of the third and fourth input signals, wherein the trigger signal is configured to trigger a beginning of a new cycle by turning the gate of the high-side FET “on” and the gate of the low-side FET “off”.

3. 发明申请

US20090273328A1 VOLTAGE/CURRENT CONTROL APPARATUS AND METHOD 有权
标题翻译：电压/电流控制装置及方法
公开(公告)号：US20090273328A1
公开(公告)日：2009-11-05
申请号：US12468770
申请日：2009-05-19
申请人： Yu Cheng Chang
发明人： Yu Cheng Chang
IPC分类号： G05F1/10
CPC分类号： H02M3/1588 , H02M3/157 , Y02B70/1466
摘要： A voltage/current control apparatus and method are disclosed. The apparatus includes a low-side field effect transistor (FET) having a source, a gate and a drain, a high-side field effect transistor (FET) having a source, a gate and a drain, a gate driver integrated circuit (IC), a sample and hold circuit, and a comparator configured to produce a trigger signal at the output when a sum of the first and second input signals is equal to a sum of the third and fourth input signals, wherein the trigger signal is configured to trigger a beginning of a new cycle by turning the gate of the high-side FET “on” and the gate of the low-side FET “off”.
摘要翻译：公开了电压/电流控制装置和方法。该装置包括具有源极，栅极和漏极的低侧场效应晶体管（FET），具有源极，栅极和漏极的高侧场效应晶体管（FET），栅极驱动器集成电路（IC ），采样保持电路和比较器，被配置为当第一和第二输入信号的和等于第三和第四输入信号的和时在输出端产生触发信号，其中触发信号被配置为通过使高侧FET的栅极“开”并且低边FET的栅极“关闭”来触发新周期的开始。

4. 发明申请

US20080206545A1 Porous material and method for preparing the same 审中-公开
标题翻译：多孔材料及其制备方法
公开(公告)号：US20080206545A1
公开(公告)日：2008-08-28
申请号：US11979394
申请日：2007-11-02
申请人： Yu Cheng Chang , Jing Lyang Jeng , Kun Cheng Lin , Te Yu Wei , Shih Yuan Lu
发明人： Yu Cheng Chang , Jing Lyang Jeng , Kun Cheng Lin , Te Yu Wei , Shih Yuan Lu
IPC分类号： B32B3/26 , C08J9/26
CPC分类号： C01B33/1585 , C01B33/155 , C08J2205/026 , F16L59/028 , Y10T428/249969
摘要： The present invention is related to a porous structure material, which is synthesized by mixing an alkyl siloxane compound or a silicate compound with an organic solvent through a sol-gel process, and modified by modification agents. The present invention is also related to a method for manufacturing porous structure material, which comprises reacting an alkyl siloxane compound or a silicate compound with an organic solvent through sol-gel process. The present invention utilizes modification agents to modify hydrophilic groups into hydrophobic groups on the surface of the porous structure material, thereby to lower the surface tension and maintain the porous structure. The porous structure material of the present invention has properties of low conductive coefficient, high porosity, high hydrophobicity and self-cleaning.
摘要翻译：本发明涉及通过溶胶 - 凝胶法将烷基硅氧烷化合物或硅酸盐化合物与有机溶剂混合并通过改性剂进行改性而合成的多孔结构材料。本发明还涉及一种多孔结构材料的制造方法，其包括通过溶胶 - 凝胶法使烷基硅氧烷化合物或硅酸盐化合物与有机溶剂反应。本发明利用改性剂将亲水基团改性为多孔结构材料表面的疏水基团，从而降低表面张力并保持多孔结构。本发明的多孔结构材料具有低导电系数，高孔隙率，高疏水性和自清洁性。

5. 发明申请

US20120293144A1 VOLTAGE/CURRENT CONTROL APPARATUS AND METHOD 有权
标题翻译：电压/电流控制装置及方法
公开(公告)号：US20120293144A1
公开(公告)日：2012-11-22
申请号：US13109922
申请日：2011-05-17
申请人： Yu Cheng Chang
发明人： Yu Cheng Chang
IPC分类号： G05F1/10
CPC分类号： H02M3/1588 , H02M2001/0009 , H02M2001/0025 , Y02B70/1466
摘要： A voltage/current control apparatus and method are disclosed. The apparatus includes a low-side field effect transistor (FET) having a source, a gate and a drain, a high-side field effect transistor (FET) having a source, a gate and a drain, a gate driver integrated circuit (IC), a sample and hold circuit, and a comparator configured to produce a trigger signal at the output when a sum of the first and second input signals is equal to a sum of the third and fourth input signals, wherein the trigger signal is configured to trigger a beginning of a new cycle by turning the gate of the high-side FET “on” and the gate of the low-side FET “off”.
摘要翻译：公开了电压/电流控制装置和方法。该装置包括具有源极，栅极和漏极的低侧场效应晶体管（FET），具有源极，栅极和漏极的高侧场效应晶体管（FET），栅极驱动器集成电路（IC ），采样保持电路和比较器，被配置为当第一和第二输入信号的和等于第三和第四输入信号的和时在输出端产生触发信号，其中触发信号被配置为通过转动高侧FET的栅极导通并关闭低边FET的栅极来触发新周期的开始。

6. 发明授权

US07977930B2 Voltage/current control apparatus and method 有权
标题翻译：电压/电流控制装置及方法
公开(公告)号：US07977930B2
公开(公告)日：2011-07-12
申请号：US12468770
申请日：2009-05-19
申请人： Yu Cheng Chang
发明人： Yu Cheng Chang
IPC分类号： G05F1/575 , G05F1/618
CPC分类号： H02M3/1588 , H02M3/157 , Y02B70/1466
摘要： A voltage/current control apparatus and method are disclosed. The apparatus includes a low-side field effect transistor (FET) having a source, a gate and a drain, a high-side field effect transistor (FET) having a source, a gate and a drain, a gate driver integrated circuit (IC), a sample and hold circuit, and a comparator configured to produce a trigger signal at the output when a sum of the first and second input signals is equal to a sum of the third and fourth input signals, wherein the trigger signal is configured to trigger a beginning of a new cycle by turning the gate of the high-side FET “on” and the gate of the low-side FET “off”.
摘要翻译：公开了电压/电流控制装置和方法。该装置包括具有源极，栅极和漏极的低侧场效应晶体管（FET），具有源极，栅极和漏极的高侧场效应晶体管（FET），栅极驱动器集成电路（IC ），采样保持电路和比较器，被配置为当第一和第二输入信号的和等于第三和第四输入信号的和时在输出端产生触发信号，其中触发信号被配置为通过使高侧FET的栅极“开”并且低边FET的栅极“关闭”来触发新周期的开始。

7. 发明授权

US08334662B2 Adaptive switch mode LED driver 有权
标题翻译：自适应开关模式LED驱动器
公开(公告)号：US08334662B2
公开(公告)日：2012-12-18
申请号：US12558275
申请日：2009-09-11
申请人： Xuecheng Jin , Yu Cheng Chang , Yang Li , Maofeng Lan , John W. Kesterson , Xiaoyan Wang , Chenghung Pan
发明人： Xuecheng Jin , Yu Cheng Chang , Yang Li , Maofeng Lan , John W. Kesterson , Xiaoyan Wang , Chenghung Pan
IPC分类号： G05F1/00 , H05B37/02 , H05B39/04 , H05B41/36
CPC分类号： H05B33/0842 , H01L22/14 , H01L2924/0002 , H05B33/0818 , H05B33/0827 , Y02B20/341 , H01L2924/00
摘要： An adaptive switch mode LED driver provides an intelligent approach to driving multiple strings of LEDs. The LED driver determines an optimal current level for each LED channel from a limited set of allowed currents. The LDO driver then determines a PWM duty cycle for driving the LEDs in each LED channel to provide precise brightness control over the LED channels. Beneficially, the LED driver minimizes the power dissipation in the LDO circuits driving each LED string, while also ensuring that the currents in each LED string are maintained within a limited range. A sample and hold LDO allows PWM control over extreme duty cycles with very fast dynamic response. Furthermore, fault protection circuitry ensures fault-free startup and operation of the LED driver.
摘要翻译：自适应开关模式LED驱动器提供了一种智能方法来驱动多串LED。 LED驱动器从有限的一组允许电流确定每个LED通道的最佳电流电平。然后，LDO驱动器确定用于驱动每个LED通道中的LED的PWM占空比，以在LED通道上提供精确的亮度控制。有利的是，LED驱动器使驱动每个LED串的LDO电路的功耗最小化，同时还确保每个LED串中的电流保持在有限的范围内。采样和保持LDO允许通过非常快的动态响应对极端占空比进行PWM控制。此外，故障保护电路确保LED驱动器的无故障启动和操作。

8. 发明申请

US20110062872A1 Adaptive Switch Mode LED Driver 有权
标题翻译：自适应开关模式LED驱动器
公开(公告)号：US20110062872A1
公开(公告)日：2011-03-17
申请号：US12558275
申请日：2009-09-11
申请人： Xuecheng Jin , Yu Cheng Chang , Yang Li , Maofeng Lan , John W. Kesterson , Xiaoyan Wang , Chenghung Pan
发明人： Xuecheng Jin , Yu Cheng Chang , Yang Li , Maofeng Lan , John W. Kesterson , Xiaoyan Wang , Chenghung Pan
IPC分类号： H05B37/00 , H01L21/66
CPC分类号： H05B33/0842 , H01L22/14 , H01L2924/0002 , H05B33/0818 , H05B33/0827 , Y02B20/341 , H01L2924/00
摘要： An adaptive switch mode LED driver provides an intelligent approach to driving multiple strings of LEDs. The LED driver determines an optimal current level for each LED channel from a limited set of allowed currents. The LDO driver then determines a PWM duty cycle for driving the LEDs in each LED channel to provide precise brightness control over the LED channels. Beneficially, the LED driver minimizes the power dissipation in the LDO circuits driving each LED string, while also ensuring that the currents in each LED string are maintained within a limited range. A sample and hold LDO allows PWM control over extreme duty cycles with very fast dynamic response. Furthermore, fault protection circuitry ensures fault-free startup and operation of the LED driver.
摘要翻译：自适应开关模式LED驱动器提供了一种智能方法来驱动多串LED。 LED驱动器从有限的一组允许电流确定每个LED通道的最佳电流电平。然后，LDO驱动器确定用于驱动每个LED通道中的LED的PWM占空比，以在LED通道上提供精确的亮度控制。有利的是，LED驱动器使驱动每个LED串的LDO电路的功耗最小化，同时还确保每个LED串中的电流保持在有限的范围内。采样和保持LDO允许通过非常快的动态响应对极端占空比进行PWM控制。此外，故障保护电路确保LED驱动器的无故障启动和操作。

9. 发明授权

US07805687B2 One-time programmable (OTP) memory cell 有权
标题翻译：一次性可编程（OTP）存储单元
公开(公告)号：US07805687B2
公开(公告)日：2010-09-28
申请号：US11541369
申请日：2006-09-30
申请人： YongZhong Hu , Yu Cheng Chang , Sung-Shan Tai
发明人： YongZhong Hu , Yu Cheng Chang , Sung-Shan Tai
IPC分类号： G06F17/50
CPC分类号： G11C17/16 , G11C17/18 , H01L27/112 , H01L27/11206
摘要： A method of performing a programming, testing and trimming operation is disclosed in this invention. The method includes a step of applying a programming circuit for programming an OTP memory for probing and sensing one of three different states of the OTP memory for carrying out a trimming operation using one of the three states of the OTP memory whereby a higher utilization of OTP memory cells is achieved. Selecting and programming two conductive circuits of the OTP into two different operational characteristics thus enables the storing and sensing one of the three different states of the OTP memory. These two conductive circuits may include two different transistors for programming into a linear resistor and a nonlinear resistor with different current conducting characteristics. The programming processes include application of a high voltage and different programming currents thus generating different operational characteristics of these two transistors.
摘要翻译：在本发明中公开了执行编程，测试和修整操作的方法。该方法包括应用用于对OTP存储器进行编程的编程电路的步骤，用于探测和感测OTP存储器的三种不同状态之一，以使用OTP存储器的三种状态之一进行修整操作，由此OTP的较高利用率实现了存储单元。将OTP的两个导电电路选择和编程成两个不同的操作特性，因此能够存储和感测OTP存储器的三种不同状态之一。这两个导电电路可以包括用于编程成线性电阻器的两个不同晶体管和具有不同电流传导特性的非线性电阻器。编程过程包括应用高电压和不同的编程电流，从而产生这两个晶体管的不同操作特性。

10. 发明授权

US07557554B2 Voltage/current control apparatus and method 有权
标题翻译：电压/电流控制装置及方法
公开(公告)号：US07557554B2
公开(公告)日：2009-07-07
申请号：US11861154
申请日：2007-09-25
申请人： Yu Cheng Chang
发明人： Yu Cheng Chang
IPC分类号： G05F1/575 , G05F1/618
CPC分类号： H02M3/1588 , H02M3/157 , Y02B70/1466
摘要： A voltage/current control apparatus and method are disclosed. The apparatus includes a low-side field effect transistor (FET) having a source, a gate and a drain, a high-side field effect transistor (FET) having a source, a gate and a drain, a gate driver integrated circuit (IC), a sample and hold circuit, and a comparator configured to produce a trigger signal at the output when a sum of the first and second input signals is equal to a sum of the third and fourth input signals, wherein the trigger signal is configured to trigger a beginning of a new cycle by turning the gate of the high-side FET “on” and the gate of the low-side FET “off”.
摘要翻译：公开了电压/电流控制装置和方法。该装置包括具有源极，栅极和漏极的低侧场效应晶体管（FET），具有源极，栅极和漏极的高侧场效应晶体管（FET），栅极驱动器集成电路（IC ），采样保持电路和比较器，被配置为当第一和第二输入信号的和等于第三和第四输入信号的和时在输出端产生触发信号，其中触发信号被配置为通过使高侧FET的栅极“开”并且低边FET的栅极“关闭”来触发新周期的开始。

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