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1. 发明授权

US08760905B2 Electric fuse, semiconductor device, and information writing method of electric fuse 有权
标题翻译：电熔丝，半导体器件和电熔丝的信息写入方法
公开(公告)号：US08760905B2
公开(公告)日：2014-06-24
申请号：US13406724
申请日：2012-02-28
申请人： Yasuo Kanda , Koichi Amari , Shunsaku Tokitou , Yuji Torige , Takayuki Arima
发明人： Yasuo Kanda , Koichi Amari , Shunsaku Tokitou , Yuji Torige , Takayuki Arima
IPC分类号： G11C17/00
CPC分类号： H01L23/5256 , G11C17/16 , G11C17/18 , H01L2924/0002 , H01L2924/00
摘要： An electric fuse includes: a filament having a first conductive layer and a second conductive layer formed on the first conductive layer, wherein at least three discernible resistive states are generated in the filament by changing of a combination of a state of the first conductive layer and a state of the second conductive layer.
摘要翻译：电熔丝包括：具有形成在第一导电层上的第一导电层和第二导电层的灯丝，其中通过改变第一导电层的状态和第一导电层的状态的组合，在灯丝中产生至少三个可识别的电阻状态第二导电层的状态。

2. 发明申请

US20120243289A1 ELECTRIC FUSE, SEMICONDUCTOR DEVICE, AND INFORMATION WRITING METHOD OF ELECTRIC FUSE 有权
标题翻译：电保险丝，半导体器件和电熔丝的信息写入方法
公开(公告)号：US20120243289A1
公开(公告)日：2012-09-27
申请号：US13406724
申请日：2012-02-28
申请人： Yasuo Kanda , Koichi Amari , Shunsaku Tokitou , Yuji Torige , Takayuki Arima
发明人： Yasuo Kanda , Koichi Amari , Shunsaku Tokitou , Yuji Torige , Takayuki Arima
IPC分类号： G11C17/00 , H01L23/52
CPC分类号： H01L23/5256 , G11C17/16 , G11C17/18 , H01L2924/0002 , H01L2924/00
摘要： An electric fuse includes: a filament having a first conductive layer and a second conductive layer formed on the first conductive layer, wherein at least three discernible resistive states are generated in the filament by changing of a combination of a state of the first conductive layer and a state of the second conductive layer.
摘要翻译：电熔丝包括：具有形成在第一导电层上的第一导电层和第二导电层的灯丝，其中通过改变第一导电层的状态和第一导电层的状态的组合，在灯丝中产生至少三个可识别的电阻状态第二导电层的状态。

3. 发明授权

US08953404B2 Semiconductor device having an electrical fuse element 有权
标题翻译：具有电熔丝元件的半导体器件
公开(公告)号：US08953404B2
公开(公告)日：2015-02-10
申请号：US13185127
申请日：2011-07-18
申请人： Yasuo Kanda , Koichi Amari , Shunsaku Tokito , Yuji Torige , Takayuki Arima , Takafumi Kunihiro
发明人： Yasuo Kanda , Koichi Amari , Shunsaku Tokito , Yuji Torige , Takayuki Arima , Takafumi Kunihiro
IPC分类号： G11C17/18 , G11C17/00 , H01L23/525 , G11C17/16
CPC分类号： H01L23/5256 , G11C17/16 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device has an electrical fuse element including: a first filament; a second filament connected to the first filament; and a series readout section connected to an end of the first filament opposite to another end of the first filament connected to the second filament, the series readout section reading series resistance of the first filament and the second filament.
摘要翻译：一种半导体器件具有电熔丝元件，包括：第一细丝; 连接到第一细丝的第二细丝; 以及串联读出部，连接到与第一细丝连接的第一丝的另一端相反的第一丝的端部，串联读出部读取第一细丝和第二细丝的串联电阻。

4. 发明申请

US20120026822A1 SEMICONDUCTOR DEVICE AND METHOD OF DRIVING THE SAME 有权
标题翻译：半导体器件及其驱动方法
公开(公告)号：US20120026822A1
公开(公告)日：2012-02-02
申请号：US13185127
申请日：2011-07-18
申请人： Yasuo Kanda , Koichi Amari , Shunsaku Tokito , Yuji Torige , Takayuki Arima , Takafumi Kunihiro
发明人： Yasuo Kanda , Koichi Amari , Shunsaku Tokito , Yuji Torige , Takayuki Arima , Takafumi Kunihiro
IPC分类号： G11C17/16
CPC分类号： H01L23/5256 , G11C17/16 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device has an electrical fuse element including: a first filament; a second filament connected to the first filament; and a series readout section connected to an end of the first filament opposite to another end of the first filament connected to the second filament, the series readout section reading series resistance of the first filament and the second filament.
摘要翻译：一种半导体器件具有电熔丝元件，包括：第一细丝; 连接到第一细丝的第二细丝; 以及串联读出部，连接到与第一细丝连接的第一丝的另一端相反的第一丝的端部，串联读出部读取第一细丝和第二细丝的串联电阻。

5. 发明申请

US20120039105A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20120039105A1
公开(公告)日：2012-02-16
申请号：US13138907
申请日：2010-06-08
申请人： Yuji Torige
发明人： Yuji Torige
IPC分类号： G11C17/16
CPC分类号： G11C17/16 , G11C13/0004 , G11C13/003 , G11C17/18 , G11C2213/74 , G11C2213/79 , H01L27/105 , H01L27/112 , H01L27/11206 , H01L27/11286
摘要： Both decreasing access time and power consumption and improving storage bit count per one word line are compatibly attained. A memory cell array 1 has a configuration in which at least one row of memory cells MC having a fuse device F with a resistance value variable according to a flowing current and a plurality of cell transistors (TRB1 and TRB2) connected in parallel with respect to the fuse device F is arranged. In the relevant semiconductor device, out of the plurality of cell transistors (TRB1 and TRB2), the number of cell transistors turned ON is controllable by a writing control signal (WRITE) inputted from outside and an internal logic circuit 5 (and a word line drive circuit 4).
摘要翻译：同时实现了每一个字线的访问时间和功耗的降低以及提高存储位计数。存储单元阵列1具有这样的结构，其中具有根据流动电流具有可变电阻值的熔丝器件F的至少一行存储单元MC和多个单元晶体管（TRB1和TRB2）相对于保险丝装置F被布置。在相关半导体器件中，在多个单元晶体管（TRB1和TRB2）中，由外部输入的写控制信号（WRITE）和内部逻辑电路5（以及字线驱动电路4）。

6. 发明授权

US08456884B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08456884B2
公开(公告)日：2013-06-04
申请号：US13138907
申请日：2010-06-08
申请人： Yuji Torige
发明人： Yuji Torige
IPC分类号： G11C17/00
CPC分类号： G11C17/16 , G11C13/0004 , G11C13/003 , G11C17/18 , G11C2213/74 , G11C2213/79 , H01L27/105 , H01L27/112 , H01L27/11206 , H01L27/11286
摘要： Both decreasing access time and power consumption and improving storage bit count per one word line are compatibly attained. A memory cell array 1 has a configuration in which at least one row of memory cells MC having a fuse device F with a resistance value variable according to a flowing current and a plurality of cell transistors (TRB1 and TRB2) connected in parallel with respect to the fuse device F is arranged. In the relevant semiconductor device, out of the plurality of cell transistors (TRB1 and TRB2), the number of cell transistors turned ON is controllable by a writing control signal (WRITE) inputted from outside and an internal logic circuit 5 (and a word line drive circuit 4).
摘要翻译：同时实现了每一个字线的访问时间和功耗的降低以及提高存储位计数。存储单元阵列1具有这样的结构，其中具有根据流动电流具有可变电阻值的熔丝器件F的至少一行存储单元MC和多个单元晶体管（TRB1和TRB2）相对于保险丝装置F被布置。在相关半导体器件中，在多个单元晶体管（TRB1和TRB2）中，由外部输入的写控制信号（WRITE）和内部逻辑电路5（以及字线驱动电路4）。

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