专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06489175B1 Electrically pumped long-wavelength VCSEL and methods of fabrication 失效
标题翻译：电泵浦长波长VCSEL和制造方法
公开(公告)号：US06489175B1
公开(公告)日：2002-12-03
申请号：US10026846
申请日：2001-12-18
申请人： Wenbin Jiang , Julian Cheng , Chan-Long Shieh , Hsing-Chung Lee
发明人： Wenbin Jiang , Julian Cheng , Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： H01L2100
CPC分类号： B82Y20/00 , H01L21/02395 , H01L21/02433 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/0262 , H01S5/18313 , H01S5/32366 , H01S5/34306 , H01S5/34346 , H01S2304/02 , H01S2304/04
摘要： A method of fabricating a vertical cavity surface emitting laser comprising the steps of epitaxially growing a first DBR positioned on a substrate wherein the first DBR is epitaxially grown using MOCVD. The substrate is orientated in an off-axis crystallographic direction which increases the radiative efficiency. A first cladding layer is positioned on the first DBR and an active region is epitaxially grown on the first cladding layer wherein the active region is epitaxially grown using plasma assisted MBE. A second DBR is epitaxially grown on the second cladding layer wherein the second DBR is epitaxially grown using MOCVD. The active region is epitaxially grown using plasma assisted MBE to increase the mole fraction of nitrogen (N) incorporation. The DBR's are grown using MOCVD to improve the electrical performance.
摘要翻译：一种制造垂直腔表面发射激光器的方法，包括以下步骤：外延生长位于衬底上的第一DBR，其中使用MOCVD外延生长第一DBR。基板在偏轴结晶方向取向，这提高了辐射效率。第一覆层位于第一DBR上，并且在第一覆层上外延生长有源区，其中使用等离子体辅助MBE外延生长有源区。在第二覆层上外延生长第二DBR，其中使用MOCVD外延生长第二DBR。使用等离子体辅助MBE外延生长活性区域以增加氮（N）掺入的摩尔分数。使用MOCVD生长DBR以提高电气性能。

2. 发明授权

US06642070B2 Electrically pumped long-wavelength VCSEL and methods of fabrication 失效
公开(公告)号：US06642070B2
公开(公告)日：2003-11-04
申请号：US10280521
申请日：2002-10-25
申请人： Wenbin Jiang , Julian Cheng , Chan-Long Shieh , Hsing-Chung Lee
发明人： Wenbin Jiang , Julian Cheng , Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： H01L2120
CPC分类号： B82Y20/00 , H01L21/02395 , H01L21/02433 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/0262 , H01S5/18313 , H01S5/32366 , H01S5/34306 , H01S5/34346 , H01S2304/02 , H01S2304/04
摘要： A method of fabricating a vertical cavity surface emitting laser comprising the steps of epitaxially growing a first DBR positioned on a substrate wherein the first DBR is epitaxially grown using MOCVD. The substrate is orientated in an off-axis crystallographic direction which increases the radiative efficiency. A first cladding layer is positioned on the first DBR and an active region is epitaxially grown on the first cladding layer wherein the active region is epitaxially grown using plasma assisted MBE. A second DBR is epitaxially grown on the second cladding layer wherein the second DBR is epitaxially grown using MOCVD. The active region is epitaxially grown using plasma assisted MBE to increase the mole fraction of nitrogen (N) incorporation. The DBR's are grown using MOCVD to improve the electrical performance.

3. 发明授权

US07013088B1 Method and apparatus for parallel optical interconnection of fiber optic transmitters, receivers and transceivers 有权
标题翻译：用于光纤发射器，接收器和收发器的并行光互连的方法和装置
公开(公告)号：US07013088B1
公开(公告)日：2006-03-14
申请号：US09651140
申请日：2000-08-30
申请人： Wenbin Jiang , Hsing-Chung Lee , Min-Wen Cheng , Chan-Long Shieh , Cheng Ping Wei , Edwin D. Dair
发明人： Wenbin Jiang , Hsing-Chung Lee , Min-Wen Cheng , Chan-Long Shieh , Cheng Ping Wei , Edwin D. Dair
IPC分类号： H04B10/00
CPC分类号： G02B6/4204 , G02B6/4214 , G02B6/4244 , G02B6/4245 , G02B6/4246 , G02B6/4261 , G02B6/4277 , G02B6/428 , G02B6/4284 , G02B6/4292 , H04B10/801 , H05K1/0274 , H05K1/14
摘要： A multichannel fiber optic module has an electromagnetic shield surrounding high frequency electrical components which is electrically and mechanically coupled to one or more guide rails near edges of a printed circuit board. The one or more guide rails of the printed circuit board include a ground trace on the top and/or bottom surfaces of the printed circuit board. The fiber optic module can be hot inserted into a module cage which has guide rail slots for mating with the guide rails of the fiber optic module. Through the guide rail slots, electromagnetic radiation from the fiber optic module is shunted to a ground plane to which the module cage is coupled on a host chassis ground. Standard singular fiber receptacles are used for the parallel data link modules to allow field cable termination.
摘要翻译：多通道光纤模块具有围绕高频电气部件的电磁屏蔽，其电连接和机械耦合到印刷电路板的边缘附近的一个或多个导轨。印刷电路板的一个或多个导轨包括在印刷电路板的顶部和/或底部表面上的接地迹线。光纤模块可以热插入到具有用于与光纤模块的导轨配合的导轨槽的模块保持架中。通过导轨槽，来自光纤模块的电磁辐射被分流到模块笼耦合到主机箱地面上的接地平面上。标准的单个光纤插座用于并行数据链路模块，以允许现场电缆终端。

4. 发明授权

US06556610B1 Semiconductor lasers 失效
标题翻译：半导体激光器
公开(公告)号：US06556610B1
公开(公告)日：2003-04-29
申请号：US09834521
申请日：2001-04-12
申请人： Wenbin Jiang , Chan-Long Shieh , Xiqing Sun , Jeff Tsao , Hsing-Chung Lee
发明人： Wenbin Jiang , Chan-Long Shieh , Xiqing Sun , Jeff Tsao , Hsing-Chung Lee
IPC分类号： H01S3094
CPC分类号： H01S5/18369 , H01S5/0071 , H01S5/02272 , H01S5/0264 , H01S5/0265 , H01S5/041 , H01S5/06203 , H01S5/1085 , H01S5/18305 , H01S5/18313 , H01S5/2027 , H01S5/2215 , H01S5/2231 , H01S5/4025 , H01S5/4075 , H01S5/423
摘要： Semiconductor lasers are formed by integrating an electrically pumped semiconductor laser, a beam steering element and a vertical cavity surface emitting laser (VCSEL) together. The electrically pumped semiconductor laser is modulated to modulate a pump beam of photons at a first wavelength. The beam steering element directs the pump beam to the VCSEL to provide optical pumping. The VCSEL receives the pump beam of photons at the first wavelength and is stimulated to emit photons of a laser beam at a second wavelength longer than the first. In embodiments, index guiding is provided in the VCSEL to improve the optical pumping and emission efficiencies when the pump beam is modulated at high frequencies. Embodiments of the beam steering element include a silicon bench, a polymer element, and a facet included in the edge emitting laser and an external mirror. Embodiments of index guiding include an air gap to form a mesa and an oxide confinement ring shaped layer.
摘要翻译：通过将电泵浦半导体激光器，光束操纵元件和垂直腔表面发射激光器（VCSEL）集成在一起来形成半导体激光器。调制电泵浦的半导体激光器以调制第一波长的光束的泵浦光束。光束操纵元件将泵浦光束引导到VCSEL以提供光泵浦。 VCSEL接收第一波长的光子束，并被激发以比第一波长长的第二波长发射激光束的光子。在实施例中，在VCSEL中提供索引引导以在泵浦光束以高频调制时提高光泵浦和发射效率。光束操纵元件的实施例包括硅台架，聚合物元件和包括在边缘发射激光器中的小面和外部反射镜。折射率引导的实施例包括形成台面的气隙和氧化物限制环形层。

5. 发明授权

US06940885B1 Systems, methods, and apparatuses for optically pumped vertical cavity surface emitting laser devices 失效
标题翻译：用于光泵浦垂直腔表面发射激光器件的系统，方法和装置
公开(公告)号：US06940885B1
公开(公告)日：2005-09-06
申请号：US10231592
申请日：2002-08-30
申请人： Julian Cheng , Chan-Long Shieh , M. V. Ramana Murty , Hsing-Chung Lee
发明人： Julian Cheng , Chan-Long Shieh , M. V. Ramana Murty , Hsing-Chung Lee
IPC分类号： H01S5/183 , H01S5/02 , H01S5/026 , H01S5/04 , H01S5/06 , H01S5/062 , H01S5/18 , H01S5/00 , H01S3/094
CPC分类号： H01S5/041 , H01S5/0215 , H01S5/0216 , H01S5/026 , H01S5/0265 , H01S5/0608 , H01S5/06216 , H01S5/06226 , H01S5/1085 , H01S5/18 , H01S5/18311
摘要： Monolithic integrated vertical-cavity surface-emitting laser devices are disclosed including an edge-emitting semiconductor pump laser (PL), an optically-pumped vertical-cavity surface-emitting laser (VCSEL), and a means for deflecting and shaping the output beam of the pump laser to optically excite the VCSEL. The optically-pumped VCSEL structure may be adapted to include a resonant cavity with multiple fixed wavelengths, or a resonance cavity whose wavelength is continuously tunable. Wafer level manufacturing techniques are also disclosed.
摘要翻译：公开了包括边缘发射半导体泵浦激光器（PL），光泵浦垂直腔表面发射激光器（VCSEL）的单片集成垂直腔表面发射激光器件，以及用于偏转和成形输出光束泵激光器来激发VCSEL。光泵浦VCSEL结构可以适于包括具有多个固定波长的谐振腔，或者其波长是连续可调谐的谐振腔。还披露了晶片级制造技术。

6. 发明授权

US08193594B2 Two-terminal switching devices and their methods of fabrication 有权
标题翻译：两端开关器件及其制造方法
公开(公告)号：US08193594B2
公开(公告)日：2012-06-05
申请号：US13015013
申请日：2011-01-27
申请人： Gang Yu , Chan-Long Shieh , Hsing-Chung Lee
发明人： Gang Yu , Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： H01L21/00 , H01L47/00 , H01L29/04
CPC分类号： H01L29/861 , G02F1/1365 , G02F1/167 , H01L29/22 , H01L29/417 , H01L29/786 , H01L45/00 , H01L51/0035 , H01L51/0579 , H01L51/0587
摘要： Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotating element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points.
摘要翻译：提供了具有高导通/截止电流比和高击穿电压特性的两端开关器件。这些器件可以用作有源矩阵显示器的驱动电路中的开关，例如在电泳，旋转元件和液晶显示器中。开关器件包括两个电极和位于电极之间的宽带半导体材料层。根据一个示例，阴极包括具有低功函数的金属，阳极包括具有p +或p ++类型的导电性的有机材料，并且宽带半导体包括金属氧化物。阴极和阳极材料之间的功函数差异优选为至少约0.6eV。可以实现在约15V的电压范围内的至少10,000的开/关电流比。如果需要，可以在具有低熔点的柔性聚合物基材上形成装置。

7. 发明申请

US20090289301A1 LASER ANNEALING OF METAL OXIDE SEMICONDUCTORON TEMPERATURE SENSITIVE SUBSTRATE FORMATIONS 审中-公开
标题翻译：金属氧化物半导体温度敏感基板的激光退火
公开(公告)号：US20090289301A1
公开(公告)日：2009-11-26
申请号：US12124420
申请日：2008-05-21
申请人： Chan-Long Shieh , Hsing-Chung Lee
发明人： Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： H01L21/268 , H01L21/28 , H01L27/12
CPC分类号： H01L21/268 , H01L29/66969 , H01L29/78603 , H01L29/78693
摘要： A method of annealing a metal oxide on a temperature sensitive substrate formation includes the steps of providing a temperature sensitive substrate formation and forming a spacer layer on a surface of the temperature sensitive substrate formation. A metal oxide semiconductor device is formed on the spacer layer, the device includes at least a layer of metal oxide semiconductor material, an interface of the metal oxide layer with a dielectric layer, and a gate metal layer adjacent the layer of metal oxide semiconductor material and the interface. The method then includes the step of at least partially annealing the layer of metal oxide semiconductor material by heating the adjacent gate metal layer with pulses of infra red or visible light radiation.
摘要翻译：在温度敏感的基板形成上退火金属氧化物的方法包括以下步骤：在温度敏感的基板形成的表面上形成温度敏感的基板并形成间隔层。金属氧化物半导体器件形成在间隔层上，该器件至少包括一层金属氧化物半导体材料，金属氧化物层与电介质层的界面，以及与金属氧化物半导体材料层相邻的栅极金属层和界面。该方法然后包括通过用红外或可见光辐射的脉冲加热相邻栅极金属层来至少部分地退火金属氧化物半导体材料层的步骤。

8. 发明授权

US06906353B1 High speed implanted VCSEL 有权
标题翻译：高速植入VCSEL
公开(公告)号：US06906353B1
公开(公告)日：2005-06-14
申请号：US10715165
申请日：2003-11-17
申请人： Chan-Long Shieh , Hsing-Chung Lee
发明人： Chan-Long Shieh , Hsing-Chung Lee
IPC分类号： H01L33/00 , H01S3/08 , H01S5/183 , H01S5/20
CPC分类号： H01S5/18308 , H01S5/18341 , H01S5/18369 , H01S5/2063 , H01S5/3095 , H01S2301/166
摘要： A vertical cavity surface emitting laser includes a first mirror region forming a first distributed Bragg reflector, a first cladding region, an active region, a second cladding region including a high electrical resistance implanted region positioned to define a current path, a second mirror region, and a current spreading region. A first electrical contact is positioned on the current spreading region and a second electrical contact is positioned to conduct electrical current in circuit with the first electrical contact through the current path. The current spreading region and the second mirror region cooperate to produce substantially uniform current distribution in the current path. A third mirror region is positioned on the current spreading region. The second and third mirror regions cooperate to provide a complete distributed Bragg reflector.
摘要翻译：垂直腔表面发射激光器包括形成第一分布布拉格反射器的第一反射镜区域，第一包层区域，有源区域，包括定位成限定电流路径的高电阻注入区域的第二包层区域，第二镜像区域，和电流扩展区域。第一电触头位于电流扩展区上，并且第二电触点被定位成使电流通过电流路径与第一电触头相通。电流扩散区域和第二反射镜区域协作以在电流路径中产生基本均匀的电流分布。第三反射镜区域位于电流扩展区域上。第二和第三镜面区域配合以提供完整的布拉格反射器。

9. 发明授权

US5547898A Method for p-doping of a light-emitting device 失效
标题翻译：发光装置的p掺杂方法
公开(公告)号：US5547898A
公开(公告)日：1996-08-20
申请号：US529468
申请日：1995-09-18
申请人： Piotr Grodzinski , Hsing-Chung Lee , Chan-Long Shieh
发明人： Piotr Grodzinski , Hsing-Chung Lee , Chan-Long Shieh
IPC分类号： C23C16/18 , H01L21/205 , H01S5/00 , H01S5/183 , H01S5/30 , H01L21/20
CPC分类号： H01S5/3054 , H01S5/18361
摘要： A method for controlling carbon doping levels in a Distributed Bragg Reflectors (DBRs) for a Vertical Cavity Surface Emitting Laser (VCSELs) devices is provided. A first stack of mirrors (105) is deposited on the surface (101) of the substrate (102). A first cladding region (106) is deposited on the first stack of mirrors (105). An active layer (108) is deposited on the first cladding layer (106). A second cladding layer (109) is deposited on the active layer (108). A second stack of mirrors (111) is deposited on the second cladding layer (109) having a carbon doping level controlled by ratio of Group V containing organometallic (tertiarybutylarsine) to Group III organometallics (trimethylgallium and trimethylaluminum).
摘要翻译：提供了一种用于控制用于垂直腔面发射激光器（VCSEL））的分布式布拉格反射器（DBR）中的碳掺杂水平的方法。在衬底（102）的表面（101）上沉积第一叠反射镜（105）。第一包层区域（106）沉积在第一反射镜叠层（105）上。有源层（108）沉积在第一覆层（106）上。第二覆层（109）沉积在有源层（108）上。第二堆叠反射镜（111）沉积在具有由含有有机金属（叔丁基胂）至III族有机金属（三甲基镓和三甲基铝）的V族的比例控制的碳掺杂浓度的第二包覆层上。

10. 发明授权

US5530715A Vertical cavity surface emitting laser having continuous grading 失效
标题翻译：具有连续分级的垂直腔表面发射激光
公开(公告)号：US5530715A
公开(公告)日：1996-06-25
申请号：US346559
申请日：1994-11-29
申请人： Chan-Long Shieh , Michael S. Lebby , Hsing-Chung Lee , Piotr Grodzinski
发明人： Chan-Long Shieh , Michael S. Lebby , Hsing-Chung Lee , Piotr Grodzinski
IPC分类号： H01S5/00 , H01S5/183 , H01S3/08
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/3054 , H01S5/3215 , H01S5/34313
摘要： A first stack of distributed Bragg mirrors having alternating layers of aluminum gallium arsenide differing in concentrations of an aluminum are disposed on a surface of a substrate with a first plurality of continuous gradient layers positioned between the alternating layers of differing aluminum concentrations to dynamically move the aluminum concentration from one of the alternating layer to another alternating layers. A first cladding region is disposed on the first stack of distributed Bragg mirrors. An active region is disposed on the first cladding region with a second cladding region being dispose on the active region. A second stack of distributed Bragg mirrors having alternating layers of aluminum gallium arsenide differing concentrations of aluminum are disposed on the second cladding region with a second plurality of continuous gradient layers being positioned between the alternating layers of differing aluminum concentrations to dynamically change the aluminum concentration from one of the altering layers to another alternating layers.
摘要翻译：具有不同于铝浓度的铝砷化镓的交替层的分布布拉格反射镜的第一堆叠被布置在基板的表面上，其中第一多个连续梯度层位于不同铝浓度的交替层之间以动态地移动铝从交替层之一到另一个交替层的浓度。第一包层区域布置在分布布拉格反射镜的第一堆叠上。有源区设置在第一包层区上，第二包层区设置在有源区上。具有不同浓度的铝的交替铝砷化镓层的第二层布拉格反射镜布置在第二覆层区域上，第二多个连续梯度层位于不同铝浓度的交替层之间以动态地将铝浓度从另一个交替层的改变层之一。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式