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2. 发明申请

US20150125985A1 ETCHING FLUID AND PRODUCTION METHOD FOR SILICON-BASED SUBSTRATE USING SAME 审中-公开
标题翻译：使用相同的硅基底材蚀刻流体和生产方法
公开(公告)号：US20150125985A1
公开(公告)日：2015-05-07
申请号：US14400106
申请日：2013-05-10
申请人： WAKO PURE CHEMICAL INDUSTRIES, LTD.
发明人： Naoko Ohuchi , Masahiko Kakizawa , Hiroyuki Tsurumoto , Terumi Watanabe , Shinshi Kawara
IPC分类号： C09K13/02 , H01L31/18
CPC分类号： C09K13/02 , H01L31/02363 , H01L31/1804 , Y02E10/50
摘要： It is the object of the present invention to provide an alkali etching solution for solar cell manufacturing, which is capable of forming uniformly a fine hubbly structure throughout a whole wafer on the surface of a wafer having a silicon as a main component, and still more is applicable to various wafers; and a method for manufacturing a silicon-based substrate for solar cell manufacturing, using the etching solution. The present invention relates to the alkali etching solution for solar cell manufacturing, comprising (A) a mono- or disulfonic acid or a salt thereof represented by the general formula [1], (B) an alkali compound, and (C) water; and a method for manufacturing a silicon-based substrate for solar cell manufacturing, characterized by etching a wafer having a silicon as a main component, using the etching solution, to form a hubbly structure at the surface of the wafer: {wherein p moieties of R1 each independently represents a hydrogen atom, a hydroxyl group or an alkyl group having 1 to 10 carbon atoms; q moieties of M each independently represents a hydrogen atom, an alkali metal atom, an ammonium (NH4) group or a tetraalkylammonium (R24N) group (wherein R2 represents an alkyl group having 1 to 4 carbon atoms); n represents 0 or 1; and p and q each independently represents 1 or 2}.
摘要翻译：本发明的目的是提供一种用于太阳能电池制造的碱蚀刻溶液，其能够在以硅为主要成分的晶片的表面上整个晶片上均匀地形成精细的轮状结构，适用于各种晶圆; 以及使用该蚀刻液的太阳能电池制造用硅基基板的制造方法。本发明涉及用于太阳能电池制造的碱蚀刻溶液，其包含（A）由通式[1]表示的单磺酸或二磺酸或其盐，（B）碱金属化合物和（C）水; 以及制造用于太阳能电池制造的硅基基板的方法，其特征在于，使用所述蚀刻溶液蚀刻具有硅作为主要成分的晶片，以在所述晶片的表面上形成一个轮状结构：{其中p部分 R1各自独立地表示氢原子，羟基或碳原子数1〜10的烷基。 q部分各自独立地表示氢原子，碱金属原子，铵（NH 4）基或四烷基铵（R 24 N）基团（其中R 2表示具有1至4个碳原子的烷基）; n表示0或1; p和q各自独立地表示1或2}。

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