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    • 1. 发明授权
    • Light emitting device and methods for forming the same
    • 发光装置及其形成方法
    • US08659045B2
    • 2014-02-25
    • US11848458
    • 2007-08-31
    • Tzong-Liang TsaiYu-Chu LiChiung-Chi Tsai
    • Tzong-Liang TsaiYu-Chu LiChiung-Chi Tsai
    • H01L33/00
    • H01L33/62H01L33/14H01L33/22H01L33/32H01L33/42H01L2924/0002H01L2924/00
    • The present invention provides a light emitting device, which includes a transparent substrate, an epitaxial stack structure having a first portion and a second portion on the transparent substrate, a II/V group compound contact layer on the first portion of the epitaxial stack structure, a nitride-crystallized layer on the II/V group compound contact layer, a transparent conductive layer covering the nitride-crystallized layer, a first electrode on a portion of the transparent conductive layer, and a second electrode on the second portion of the epitaxial stack structure and structurally separated from the structure on the first portion of the epitaxial stack structure. The nitride-crystallized layer may help increase the external quantum efficiency of the light emitting device, thereby the light emitting efficiency of the light emitting device may also be improved.
    • 本发明提供了一种发光器件,其包括透明衬底,在透明衬底上具有第一部分和第二部分的外延堆叠结构,在外延堆叠结构的第一部分上的II / V族化合物接触层, II / V族化合物接触层上的氮化物结晶层,覆盖氮化物结晶层的透明导电层,透明导电层的一部分上的第一电极和外延层的第二部分上的第二电极 结构和结构上与外延堆叠结构的第一部分上的结构分离。 氮化物结晶层可以有助于增加发光器件的外部量子效率,从而也可以提高发光器件的发光效率。
    • 2. 发明授权
    • Semiconductor light-emitting device and method of fabricating the same
    • 半导体发光器件及其制造方法
    • US07659557B2
    • 2010-02-09
    • US11798873
    • 2007-05-17
    • Chiung-Chi TsaiTzong-Liang TsaiYu-Chu Li
    • Chiung-Chi TsaiTzong-Liang TsaiYu-Chu Li
    • H01L33/00
    • H01L33/26H01L33/40
    • The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second conductive type semiconductor material layer, a II-V group (or II-IV-V group) compound contact layer, a transparent conductive layer, and a second electrode. The existence of the II-V group (or II-IV-V group) compound contact layer improves the ohmic contact between the second conductive type semiconductor material layer and the transparent conductive layer.
    • 本发明提供具有II-V族(或II-IV-V族)化合物接触层的半导体发光器件及其制造方法。 根据本发明的优选实施例的半导体发光器件包括基板,第一导电型半导体材料层,发光层,第一电极,第二导电型半导体材料层,II-V族( 或II-IV-V族)化合物接触层,透明导电层和第二电极。 II-V族(或II-IV-V族)化合物接触层的存在改善了第二导电类型半导体材料层和透明导电层之间的欧姆接触。
    • 5. 发明申请
    • Light emitting device and method for making the same
    • 发光装置及其制造方法
    • US20080277678A1
    • 2008-11-13
    • US11801155
    • 2007-05-08
    • Yu-Chu LiChiung-Chi TsaiTzong-Liang TsaiSu-Hui Lin
    • Yu-Chu LiChiung-Chi TsaiTzong-Liang TsaiSu-Hui Lin
    • H01L29/22H01L21/00H01L27/15
    • H01L33/22H01L33/38
    • A method for making a light emitting device includes: forming a multi-layer structure on a substrate; forming a patterned mask material on one side of the multi-layer structure such that the patterned mask material covers an etch region of the multi-layer structure; forming a roughened layer on the multi-layer structure; removing the patterned mask material from the multi-layer structure so as to expose the etch region of the multi-layer structure; forming an etch mask material on the roughened layer; dry etching the multi-layer structure at the exposed etch region so as to define an electrode-forming region on the first semiconductor layer that corresponds to the etch region of the multi-layer structure; and forming an electrode on the electrode-forming region of the first semiconductor layer.
    • 一种制造发光器件的方法包括:在衬底上形成多层结构; 在所述多层结构的一侧上形成图案化掩模材料,使得所述图案化掩模材料覆盖所述多层结构的蚀刻区域; 在多层结构上形成粗糙层; 从所述多层结构中去除所述图案化掩模材料,以暴露所述多层结构的蚀刻区域; 在粗糙层上形成蚀刻掩模材料; 在暴露的蚀刻区域干蚀刻多层结构,以便在对应于多层结构的蚀刻区域的第一半导体层上限定电极形成区域; 以及在所述第一半导体层的电极形成区上形成电极。
    • 6. 发明申请
    • LIGHT EMITTING DEVICE AND METHODS FOR FORMING THE SAME
    • 发光装置及其形成方法
    • US20080054289A1
    • 2008-03-06
    • US11848458
    • 2007-08-31
    • Tzong-Liang TsaiYu-Chu LiChiung-Chi Tsai
    • Tzong-Liang TsaiYu-Chu LiChiung-Chi Tsai
    • H01L33/00
    • H01L33/62H01L33/14H01L33/22H01L33/32H01L33/42H01L2924/0002H01L2924/00
    • The present invention provides a light emitting device, which includes a transparent substrate, an epitaxial stack structure having a first portion and a second portion on the transparent substrate, a II/V group compound contact layer on the first portion of the epitaxial stack structure, a nitride-crystallized layer on the II/V group compound contact layer, a transparent conductive layer covering the nitride-crystallized layer, a first electrode on a portion of the transparent conductive layer, and a second electrode on the second portion of the epitaxial stack structure and structurally separated from the structure on the first portion of the epitaxial stack structure. The nitride-crystallized layer may help increase the external quantum efficiency of the light emitting device, thereby the light emitting efficiency of the light emitting device may also be improved.
    • 本发明提供了一种发光器件,其包括透明衬底,在透明衬底上具有第一部分和第二部分的外延堆叠结构,在外延堆叠结构的第一部分上的II / V族化合物接触层, II / V族化合物接触层上的氮化物结晶层,覆盖氮化物结晶层的透明导电层,透明导电层的一部分上的第一电极和外延层的第二部分上的第二电极 结构和结构上与外延堆叠结构的第一部分上的结构分离。 氮化物结晶层可以有助于增加发光器件的外部量子效率,从而也可以提高发光器件的发光效率。
    • 9. 发明申请
    • Optoelectronic device
    • 光电器件
    • US20090008624A1
    • 2009-01-08
    • US11984062
    • 2007-11-13
    • Tzong-Liang TsaiYu-Chu Li
    • Tzong-Liang TsaiYu-Chu Li
    • H01L33/00
    • H01L33/12H01L21/0237H01L21/0242H01L21/02439H01L21/02458H01L21/02505H01L21/0254H01L33/24H01L33/32
    • The present invention provides an optoelectronic device, which includes a first electrode, a substrate on the first electrode, and a buffer layer on the substrate. The buffer layer further includes a first gallium nitride based compound layer on the substrate, a II-V group compound layer on the first gallium nitride based compound layer, a second gallium nitride based compound layer on the II-V group compound layer, and a third gallium nitride based compound layer on the second gallium nitride based compound layer. Then, a first semiconductor conductive layer is formed on the buffer layer; an active layer is formed on the first semiconductor conductive layer, in which the active layer is an uneven Multi-Quantum Well; a second semiconductor conductive layer on the active layer; a transparent conductive layer on the second semiconductor conductive layer; and a second electrode on the transparent conductive layer.
    • 本发明提供一种光电器件,其包括第一电极,第一电极上的衬底和衬底上的缓冲层。 缓冲层还包括在基板上的第一氮化镓基化合物层,第一氮化镓基化合物层上的II-V族化合物层,II-V族化合物层上的第二氮化镓基化合物层和 第二氮化镓基化合物层上的第三氮化镓基化合物层。 然后,在缓冲层上形成第一半导体导电层; 在第一半导体导电层上形成有源层,其中有源层是不均匀的多量子阱; 在所述有源层上的第二半导体导电层; 第二半导体层上的透明导电层; 和在透明导电层上的第二电极。
    • 10. 发明申请
    • Optoelectronic device
    • 光电器件
    • US20090008626A1
    • 2009-01-08
    • US12000610
    • 2007-12-14
    • Tzong-Liang TsaiYu-Chu Li
    • Tzong-Liang TsaiYu-Chu Li
    • H01L29/06H01L33/00
    • H01L33/24H01L33/007H01L33/02H01L33/26
    • The present invention provides an optoelectronic device which includes a first electrode, a substrate on the first electrode; a buffer layer on the substrate, in which the buffer layer includes a first gallium nitride based compound layer on the substrate, a second gallium nitride based compound layer, and a II-V group compound layer between the first gallium nitride based compound layer and the second gallium nitride based compound layer; a first semiconductor conductive layer on the buffer layer; an active layer on the first semiconductor conductive layer, in which the active layer is an uneven Multi-Quantum Well; a semiconductor conductive layer on the active layer; a transparent layer on the second semiconductor conductive layer; and a second electrode on the transparent layer.
    • 本发明提供一种光电器件,其包括第一电极,第一电极上的衬底; 所述衬底上的缓冲层,其中所述缓冲层在所述衬底上包括第一氮化镓基化合物层,所述第二氮化镓基化合物层和所述第一氮化镓基化合物层和所述第一氮化镓基化合物层之间的II-V族化合物层 第二氮化镓基化合物层; 在缓冲层上的第一半导体导电层; 在第一半导体导电层上的有源层,其中有源层是不均匀的多量子阱; 有源层上的半导体导电层; 第二半导体层上的透明层; 和透明层上的第二电极。