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1. 发明授权

US06998562B2 Controller for a wire electrical discharge machine 有权
标题翻译：电线放电机控制器
公开(公告)号：US06998562B2
公开(公告)日：2006-02-14
申请号：US11141471
申请日：2005-06-01
申请人： Yasuo Arakawa , Toshiyuki Ogata , Kaoru Hiraga
发明人： Yasuo Arakawa , Toshiyuki Ogata , Kaoru Hiraga
IPC分类号： B23H1/00 , B23H7/02 , B23H7/20
CPC分类号： B23H7/20 , B23H7/04 , B23H7/065
摘要： Set feed speed is lowered when a short circuit is detected in a range within which machining is unstable, the range starting from the point at which discharge is detected after machining starts from a machining start point, thus control is carried our according to a machining rate, thereby preventing successive occurrence of short circuits. When machining proceeds beyond the unstable range, the lowered feed speed is returned to the normal feed speed.
摘要翻译：在加工不稳定的范围内检测到短路时，设定进给速度降低，从加工后检测到放电的点开始的范围从加工起点开始，由此根据加工速度进行控制，从而防止短路的连续发生。当加工进入超出不稳定范围时，降低的进给速度返回正常进给速度。

2. 发明申请

US20050269296A1 CONTROLLER FOR A WIRE ELECTRICAL DISCHARGE MACHINE 有权
标题翻译：电力放电机控制器
公开(公告)号：US20050269296A1
公开(公告)日：2005-12-08
申请号：US11141471
申请日：2005-06-01
申请人： Yasuo Arakawa , Toshiyuki Ogata , Kaoru Hiraga
发明人： Yasuo Arakawa , Toshiyuki Ogata , Kaoru Hiraga
IPC分类号： B23H7/04 , B23H7/06 , B23H7/14 , B23H7/20
CPC分类号： B23H7/20 , B23H7/04 , B23H7/065
摘要： Set feed speed is lowered when a short circuit is detected in a range within which machining is unstable, the range starting from the point at which discharge is detected after machining starts from a machining start point, thus control is carried our according to a machining rate, thereby preventing successive occurrence of short circuits. When machining proceeds beyond the unstable range, the lowered feed speed is returned to the normal feed speed.
摘要翻译：在加工不稳定的范围内检测到短路时，设定进给速度降低，从加工开始后检测到放电的点开始的范围从加工起点开始，由此根据加工速度进行控制，从而防止短路的连续发生。当加工进入超出不稳定范围时，降低的进给速度返回正常进给速度。

3. 发明授权

US07888617B2 Controller for wire-cut electrical discharge machine 有权
标题翻译：线切割放电机控制器
公开(公告)号：US07888617B2
公开(公告)日：2011-02-15
申请号：US12044184
申请日：2008-03-07
申请人： Kaoru Hiraga , Toshiyuki Ogata
发明人： Kaoru Hiraga , Toshiyuki Ogata
IPC分类号： B23H7/02 , B23H7/20
CPC分类号： B23H7/065 , B23H7/20
摘要： In a reference (n-th) machining pass, the wire travels along a machining route RTn and passes through a reentrant angular corner with wire position WMn, producing a workpiece edge Hn. In the following (n+1)-th machining pass, the wire travels along a machining route RTn+1, but the straight sections preceding and following the corner are replaced with a circular arc route so that the wire passes smoothly through a straight route, then a circular arc route, and then a straight route. The radius of curvature of the circular arc route is determined in the controller on the basis of the difference between the offset specified for the reference (n-th) machining pass and the offset specified for the (n+1)-th pass in which the circular arc route is inserted. Accordingly, the machining margin does not increase in the reentrant angular corner and the machining accuracy is thereby improved.
摘要翻译：在参考（第n）个加工道次中，线沿着加工路径RTn行进，并通过具有线位置WMn的可重入角角，产生工件边缘Hn。在下面的第（n + 1）次加工中，线沿着加工路径RTn + 1行进，但是角部前后的直线部分被圆弧路线替代，使得线材顺利地通过直线路线，然后是圆弧路线，然后是直线路线。圆弧路径的曲率半径基于对第（n）个加工通过指定的偏移与第（n + 1）次通过指定的偏移量之间的差异，在控制器中确定，其中插入圆弧路线。因此，在凹入角角中的加工余量不增加，从而提高了加工精度。

4. 发明申请

US20080086724A1 Controller for machine tool 审中-公开
标题翻译：机床控制器
公开(公告)号：US20080086724A1
公开(公告)日：2008-04-10
申请号：US11902202
申请日：2007-09-19
申请人： Toshiyuki Ogata , Kaoru Hiraga
发明人： Toshiyuki Ogata , Kaoru Hiraga
IPC分类号： G06F9/44
CPC分类号： G05B19/4155 , G05B2219/35573 , G05B2219/36225
摘要： A processing program is constituted by a main program and sub-programs, and a plurality of processing programs are stored in a storage means. Only main programs are extracted from the storage means and displayed on a display device by a list. Extraction of only the main program is performed by determining whether a program to be detected has a specific code included in only the main program or whether the program to be detected has a specific code included in only a sub-program.
摘要翻译：处理程序由主程序和子程序构成，并且多个处理程序存储在存储装置中。仅从存储装置提取主程序并通过列表显示在显示装置上。仅通过确定要检测的程序是否具有仅包括在主程序中的特定代码，或者所检测的程序是否仅包括在子程序中的特定代码来执行仅主程序的提取。

5. 发明申请

US20070156278A1 Monitoring device for machining apparatus 审中-公开
标题翻译：加工设备监控装置
公开(公告)号：US20070156278A1
公开(公告)日：2007-07-05
申请号：US11646564
申请日：2006-12-28
申请人： Kaoru Hiraga , Toshiyuki Ogata
发明人： Kaoru Hiraga , Toshiyuki Ogata
IPC分类号： G06F19/00
CPC分类号： G05B19/406
摘要： A monitoring device capable of automatically plotting a machining path according to a machining program to be executed or being executed for a machining apparatus in which workpieces and machining programs are automatically changed and executed successively. When a machining program is selected from machining managing means, the selected machining program is stored to be renewed in machining program execution means. When machining program analysis means determines the renewal of the machining program in the machining program, the machining program analysis means analyzes the machining program stored in the machining program execution means, so that a machining path according to the machining program is plotted on a display device.
摘要翻译：一种监视装置，其能够根据要对所述加工装置执行或正在执行的加工程序自动绘制加工路径，所述加工装置在其中自动地改变和执行工件和加工程序。当从加工管理装置中选择加工程序时，所选择的加工程序被存储以在加工程序执行装置中更新。当加工程序分析装置确定加工程序中的加工程序的更新时，加工程序分析装置分析存储在加工程序执行装置中的加工程序，使得根据加工程序的加工路径被绘制在显示装置上。

6. 发明授权

US07851129B2 Resist composition, resist pattern forming method and compound 有权
标题翻译：抗蚀剂组合物，抗蚀剂图案形成方法和化合物
公开(公告)号：US07851129B2
公开(公告)日：2010-12-14
申请号：US11718091
申请日：2005-09-30
申请人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Hideo Hada
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0045 , G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/114
摘要： This resist composition is a resist composition containing a compound in which a portion or all of hydrogen atoms of phenolic hydroxyl groups in a polyhydric phenol compound (a) having two or more phenolic hydroxyl groups and having a molecular weight of 300 to 2,500 are substituted with at least one selected from the group consisting of acid dissociable dissolution inhibiting groups represented by the following general formulas (p1) and (p2) wherein R1 and R2 each independently represents a branched or cyclic alkyl group, and may contain a hetero atom in the structure; R3 represents a hydrogen atom or a lower alkyl group; and n′ represents an integer of 1 to 3.
摘要翻译：该抗蚀剂组合物是含有下述化合物的抗蚀剂组合物，其中具有两个以上酚羟基并且分子量为300〜2,500的多元酚化合物（a）中的酚羟基的一部分或全部氢原子被取代为选自由以下通式（p1）和（p2）表示的酸解离溶解抑制基团中的至少一种，其中R 1和R 2各自独立地表示支链或环状烷基，并且可以在结构中含有杂原子 ; R3表示氢原子或低级烷基; n'表示1〜3的整数。

7. 发明授权

US07807328B2 Polymer compound, photoresist composition including the polymer compound, and resist pattern formation method 有权
标题翻译：高分子化合物，包含高分子化合物的光致抗蚀剂组合物和抗蚀图案形成方法
公开(公告)号：US07807328B2
公开(公告)日：2010-10-05
申请号：US10588866
申请日：2005-01-20
申请人： Toshiyuki Ogata , Syogo Matsumaru , Hideo Hada
发明人： Toshiyuki Ogata , Syogo Matsumaru , Hideo Hada
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0046 , C08G61/08 , G03F7/0392 , G03F7/0395 , G03F7/0397
摘要： The present invention provide a polymer compound whereby the alkali solubility greatly changes before and after exposure in a chemically amplified positive resist, and a photoresist composition including the polymer compound and a resist pattern formation method which can form a fine pattern with high resolution. The photoresist composition and the resist pattern formation method use the polymer compound including at least one substituent group selected from an alcoholic hydroxyl group, a phenolic hydroxyl group, or a carboxyl group as an alkali soluble group (i), wherein the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH2—O—R (1) (wherein R represents an organic group containing no more than 20 carbon atoms and at least one hydrophilic group).
摘要翻译：本发明提供了一种聚合物化合物，其中碱溶解度在化学放大的正性抗蚀剂中暴露之前和之后剧烈变化，以及包含高分子化合物的光致抗蚀剂组合物和能够以高分辨率形成精细图案的抗蚀剂图案形成方法。光致抗蚀剂组合物和抗蚀图案形成方法使用包含至少一个选自醇羟基，酚羟基或羧基的取代基的聚合物化合物作为碱溶性基团（i），其中取代基被保护由通式（1）表示的酸解离的溶解抑制基团（ⅱ）：-CH 2 -O-R（1）（其中R表示含有不超过20个碳原子的有机基团和至少一个亲水基团）。

8. 发明申请

US20090285344A1 Phase Locked Loop with Temperature and Process Compensation 失效
标题翻译：具有温度和过程补偿的锁相环
公开(公告)号：US20090285344A1
公开(公告)日：2009-11-19
申请号：US12120331
申请日：2008-05-14
申请人： David W. Boerstler , Masaaki Kaneko , Toshiyuki Ogata , Jieming Qi
发明人： David W. Boerstler , Masaaki Kaneko , Toshiyuki Ogata , Jieming Qi
IPC分类号： H03D3/24
CPC分类号： H03L1/022 , H03L1/00 , H03L7/099 , H03L2207/06
摘要： Mechanisms are provided for compensating for process and temperature variations in a circuit. The mechanisms may select at least one resistor in a plurality of resistors in the circuit to provide a resistance value for generating a calibration voltage input to the circuit to compensate for variations in process. A reference signal may be compared to a feedback signal generated by the circuit based on the calibration signal. A determination is made as to whether the feedback signal is within a tolerance of the reference signal and, if so, an identifier of the selected at least one resistor is stored in a memory device coupled to the circuit. The circuit may be operated using the selected at least one resistor based on the identifier stored in the memory device. An apparatus and integrated circuit device utilizing these mechanisms are also provided.
摘要翻译：提供用于补偿电路中的工艺和温度变化的机构。这些机构可以选择电路中的多个电阻器中的至少一个电阻器，以提供用于产生输入到电路的校准电压的电阻值，以补偿过程中的变化。参考信号可以与基于校准信号的电路产生的反馈信号进行比较。确定反馈信号是否在参考信号的公差之内，如果是，则将所选择的至少一个电阻器的标识符存储在耦合到该电路的存储器件中。可以基于存储在存储器件中的标识符，使用所选择的至少一个电阻器来操作该电路。还提供了利用这些机构的装置和集成电路装置。

9. 发明授权

US07592122B2 Photoresist composition, and low-molecular compound and high-molecular compound for the photoresist composition 有权
标题翻译：光致抗蚀剂组合物和用于光致抗蚀剂组合物的低分子化合物和高分子化合物
公开(公告)号：US07592122B2
公开(公告)日：2009-09-22
申请号：US10553315
申请日：2004-04-15
申请人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida , Mitsuru Sato , Syogo Matsumaru , Hideo Hada
发明人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida , Mitsuru Sato , Syogo Matsumaru , Hideo Hada
IPC分类号： G03F7/004 , C08C19/28
CPC分类号： C07C43/126 , C07C43/162 , C07C43/1747 , C07C69/96 , C07C2601/14 , C07C2602/42 , G03F7/0046 , G03F7/0395 , G03F7/0397 , G03F7/0757 , Y10S430/108
摘要： A high-molecular compound and a low-molecular compound or both having an alkali-soluble site (i) wherein at least a part of the alkali-soluble site (i) is protected with (ii) a halogen atom-containing acetal type acid-dissociative, dissolution inhibiting group, as well as a photoresist composition comprising the same. The photoresist composition is highly stable during storage and can give a resist pattern excellent in sectional rectangular shape and having high transparency to an exposure light, particularly a light having a wavelength of 300 nm or less.
摘要翻译：具有碱溶性部位（i）的高分子化合物和低分子化合物或二者，其中至少一部分碱溶性部位（i）用（ⅱ）含卤原子的缩醛型酸 - 解离，溶解抑制基团，以及包含其的光致抗蚀剂组合物。光致抗蚀剂组合物在保存期间高度稳定，并且可以得到截面矩形形状优异并且对曝光光，特别是波长为300nm以下的光具有高透明度的抗蚀剂图案。

10. 发明申请

US20080166655A1 Polymer Compound, Photoresist Composition Including the Polymer Compound, and Resist Pattern Formation Method 有权
标题翻译：高分子化合物，包含聚合物化合物的光致抗蚀剂组合物和抗蚀剂图案形成方法
公开(公告)号：US20080166655A1
公开(公告)日：2008-07-10
申请号：US10589681
申请日：2005-01-28
申请人： Toshiyuki Ogata , Syogo Matsumaru , Yohei Kinoshita , Hideo Hada , Daiju Shiono , Hiroaki Shimizu , Naotaka Kubota
发明人： Toshiyuki Ogata , Syogo Matsumaru , Yohei Kinoshita , Hideo Hada , Daiju Shiono , Hiroaki Shimizu , Naotaka Kubota
IPC分类号： G03F7/004 , C08G65/34 , C07C69/533 , C08G63/00 , G03F7/26 , C07C69/52
CPC分类号： G03F7/0397 , C07C69/54 , C07C2603/74 , C08F220/28 , C08F290/06 , C08F290/061 , C09D133/14 , G03F7/0046 , Y10S430/108 , Y10S430/111
摘要： The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH2—OCH2nR1 (1) (wherein R1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5.).
摘要翻译：本发明提供一种高分子化合物，其可以构成光刻胶组合物，其能够具有优异的分辨率，形成具有良好矩形性的精细图案，即使酸产生器产生的酸的酸强弱也能获得良好的抗蚀特性，并具有良好的灵敏度; 包含该高分子化合物的光致抗蚀剂组合物; 以及使用光致抗蚀剂组合物的抗蚀剂图案形成方法。光致抗蚀剂组合物和抗蚀剂图案形成方法使用包含碱溶性基团（i）的高分子化合物，其中碱溶性基团（i）为选自醇羟基，羧基或酚类中的至少一个取代基羟基，取代基被通过通式（1）表示的酸解离的溶解抑制基团（ii）保护：<？in-line-formula description =“In-line Formulas”end =“lead”？ > -CH 2 - - - - - - - - - - - - - - （2）（其中R 1表示含有不多于20个碳原子的脂环族基团，并且可以含有氧原子，氮原子，硫原子或卤素原子，n表示0或1〜5的整数。

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