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1. 发明申请

US20120236582A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD 有权
标题翻译：半导体发光器件和制造方法
公开(公告)号：US20120236582A1
公开(公告)日：2012-09-20
申请号：US13355754
申请日：2012-01-23
申请人： Takeshi WARAGAYA , Kosaburo ITO , Toshihiro SEKO , Kazuhiko UENO , Soji OWADA
发明人： Takeshi WARAGAYA , Kosaburo ITO , Toshihiro SEKO , Kazuhiko UENO , Soji OWADA
IPC分类号： B60Q1/04 , H01L33/60 , H01L27/15 , F21V29/00 , H01L33/50
CPC分类号： H01L33/60 , H01L33/46 , H01L33/502 , H01L33/507 , H01L2224/13 , H01L2224/48091 , H01L2224/48247 , H01L2933/0041 , H01L2924/00014
摘要： A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer in order to emit various colored lights including white light. The device can include a board, a frame located on the board, at least one light-emitting chip mounted on the board, the wavelength converting layer located between an optical plate and an outside surface of the chips so that a density of a peripheral region is lower than that of a middle region, and a reflective material layer disposed at least between the frame and a side surface of the wavelength-converting layer. The device can have the reflective material layer form each reflector and can use a wavelength converting layer having different densities, and therefore can emit a wavelength-converted light having a high light-emitting efficiency and a uniform color tone from various small light-emitting surfaces.
摘要翻译：半导体发光器件及其制造方法可以包括波长转换层，以便发射包括白光的各种彩色光。该装置可以包括板，位于板上的框架，安装在板上的至少一个发光芯片，位于光学板和芯片外表面之间的波长转换层，使得周边区域的密度低于中间区域，反射材料层至少设置在框架与波长转换层的侧面之间。该装置可以具有由反射体形成的反射材料层，并且能够使用具有不同密度的波长转换层，因此能够从各种小的发光面发射具有高发光效率和均匀色调的波长转换光。

2. 发明申请

US20120235169A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD 有权
标题翻译：半导体发光器件及制造方法
公开(公告)号：US20120235169A1
公开(公告)日：2012-09-20
申请号：US13229663
申请日：2011-09-09
申请人： Toshihiro SEKO , Kosaburo Ito
发明人： Toshihiro SEKO , Kosaburo Ito
IPC分类号： H01L33/60 , H01L33/52 , H01L33/08
CPC分类号： H01L33/60 , H01L25/0753 , H01L33/504 , H01L33/56 , H01L33/58 , H01L2224/48091 , H01L2224/48465 , H01L2924/3025 , H01L2933/005 , H01L2933/0058 , H01L2924/00
摘要： A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer encapsulating at least one semiconductor light-emitting chip to emit various colored lights including white light. The semiconductor light-emitting device can include a base board with the chip mounted thereon, a frame located on the base board, a transparent plate located on the wavelength converting layer, a reflective material layer disposed between the frame and both side surfaces of the wavelength converting layer and the transparent plate, and a light-absorbing layer located on the reflective material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency and a contrast between a light-emitting and non-light-emitting surfaces by using the transparent material and light-absorbing layer. A wavelength-converted light that is emitted can have a high light-emitting efficiency and a high contrast between a light-emitting and non-light-emitting surface from a small light-emitting surface.
摘要翻译：半导体发光器件及其制造方法可以包括封装至少一个半导体发光芯片以发射包括白光的各种彩色光的波长转换层。半导体发光装置可以包括其上安装有芯片的基板，位于基板上的框架，位于波长转换层上的透明板，设置在框架和波长的两个侧面之间的反射材料层转换层和透明板，以及位于反射材料层上的光吸收层。半导体发光装置可以通过使用透明材料和光吸收层来提高发光效率和发光面与非发光面之间的对比度。发射的波长转换的光可以在小的发光表面上具有高的发光效率和发光和非发光表面之间的高对比度。

3. 发明申请

US20110235355A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD 有权
标题翻译：半导体发光器件及制造方法
公开(公告)号：US20110235355A1
公开(公告)日：2011-09-29
申请号：US13070707
申请日：2011-03-24
申请人： Toshihiro SEKO
发明人： Toshihiro SEKO
IPC分类号： F21V9/00 , F21V11/00 , H01L21/00
CPC分类号： H01L33/50 , F21S41/143 , H01L25/0753 , H01L33/58 , H01L2924/0002 , Y10T29/41 , H01L2924/00
摘要： A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer encapsulating at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, a frame located on the base board, the chip mounted on the base board, the wavelength converting layer formed around the chip, a transparent plate located on the wavelength converting layer and a diffusing reflection member disposed between the frame and both side surfaces of the wavelength converting layer and the transparent plate. The device can be configured to improve the linearity of a boundary between the diffusing reflection member and both side surfaces by using the transparent plate, and therefore can be used for a headlight that can form a favorable horizontal cut-off line corresponding to the boundary via a projector lens without a shade.
摘要翻译：半导体发光器件及其制造方法可以包括封装至少一个半导体发光芯片的波长转换层，以便发射包括白光的各种彩色光。半导体发光装置可以包括基板，位于基板上的框架，安装在基板上的芯片，形成在芯片周围的波长转换层，位于波长转换层上的透明板和扩散反射构件设置在波长转换层和透明板的框架和两个侧表面之间。该装置可以被配置为通过使用透明板来改善扩散反射构件和两个侧表面之间的边界的线性，因此可以用于可以形成对应于边界通过的有利的水平截止线的前照灯一个没有阴影的投影机镜头。

4. 发明申请

US20100044734A1 MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING APPARATUS AND SEMICONDUCTOR LIGHT-EMITTING APPARATUS 有权
标题翻译：半导体发光装置和半导体发光装置的制造方法
公开(公告)号：US20100044734A1
公开(公告)日：2010-02-25
申请号：US12539737
申请日：2009-08-12
申请人： Toshihiro SEKO , Kazuyuki Yoshimizu
发明人： Toshihiro SEKO , Kazuyuki Yoshimizu
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/38 , H01L33/405 , H01L33/46 , H01L2933/0016
摘要： A method includes forming a light-emission operating layer on a growth substrate; forming a reflection insulating layer on the light-emission operating layer; forming opening portions in the insulating layer; forming a contact portion which has a thickness adapted to flatten the opening portions and has been embedded into the opening portions; forming an electrode layer on the insulating layer and the contact portions; forming a first bonding metal layer on the electrode layer; preparing a supporting substrate in which a second bonding metal layer has been formed; and making the first and second bonding metal layers molten and joined.
摘要翻译：一种方法包括在生长衬底上形成发光操作层; 在发光工作层上形成反射绝缘层; 在绝缘层中形成开口部分; 形成具有适于使开口部分变平并已被嵌入到开口部分中的厚度的接触部分; 在绝缘层和接触部分上形成电极层; 在所述电极层上形成第一接合金属层; 制备其中形成有第二接合金属层的支撑衬底; 并使第一和第二接合金属层熔融并接合。

5. 发明申请

US20120168954A1 SUBSTRATE BONDING METHOD AND SEMICONDUCTOR DEVICE 有权
标题翻译：基板接合方法和半导体器件
公开(公告)号：US20120168954A1
公开(公告)日：2012-07-05
申请号：US13418037
申请日：2012-03-12
申请人： Toshihiro SEKO
发明人： Toshihiro SEKO
IPC分类号： H01L23/488
CPC分类号： B23K1/19 , B23K2101/40 , H01L24/29 , H01L24/32 , H01L24/743 , H01L24/83 , H01L2224/04026 , H01L2224/29101 , H01L2224/29111 , H01L2224/743 , H01L2224/83191 , H01L2224/83193 , H01L2224/83801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/04953 , H01L2924/10253 , H01L2924/10329 , H01L2924/10349 , H01L2924/12036 , H01L2924/00 , H01L2924/01028 , H01L2924/01032 , H01L2924/00014
摘要： A first Sn absorption layer is formed on a principal surface of a first substrate, the first Sn absorption layer being made of metal absorbing Sn from AuSn alloy and lowering a relative proportion of Sn in the AuSn alloy. A second Sn absorption layer is formed on a principal surface of a second substrate, the second Sn absorption layer being made of metal absorbing Sn from AuSn alloy and lowering a relative proportion of Sn in the AuSn alloy. A solder layer made of AuSn alloy is formed at least on one Sn absorption layer of the first and second Sn absorption layers. The first and second substrates are bonded together by melting the solder layer in a state that the first and second substrates are in contact with each other, with the principal surfaces of the first and second substrates facing each other.
摘要翻译：第一Sn吸收层形成在第一基板的主表面上，第一Sn吸收层由AuSn合金吸收Sn的金属制成，并降低AuSn合金中的Sn的相对比例。第二Sn吸收层形成在第二基板的主表面上，第二Sn吸收层由AuSn合金的金属吸收Sn制成，并降低AuSn合金中Sn的相对比例。由AuSn合金制成的焊料层形成在第一和第二Sn吸收层的至少一个Sn吸收层上。第一和第二基板通过在第一和第二基板彼此接触的状态下熔化焊料层而结合在一起，第一和第二基板的主表面彼此面对。

6. 发明申请

US20080315427A1 SUBSTRATE BONDING METHOD AND SEMICONDUCTOR DEVICE 有权
标题翻译：基板接合方法和半导体器件
公开(公告)号：US20080315427A1
公开(公告)日：2008-12-25
申请号：US12142030
申请日：2008-06-19
申请人： Toshihiro SEKO
发明人： Toshihiro SEKO
IPC分类号： H01L23/48 , B23K31/02
CPC分类号： B23K1/19 , B23K2101/40 , H01L24/29 , H01L24/32 , H01L24/743 , H01L24/83 , H01L2224/04026 , H01L2224/29101 , H01L2224/29111 , H01L2224/743 , H01L2224/83191 , H01L2224/83193 , H01L2224/83801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/04953 , H01L2924/10253 , H01L2924/10329 , H01L2924/10349 , H01L2924/12036 , H01L2924/00 , H01L2924/01028 , H01L2924/01032 , H01L2924/00014
摘要： (a) A first Sn absorption layer (5) is formed on the principal surface of a first substrate (1), the first Sn absorption layer being made of metal absorbing Sn from AuSn alloy and lowering a relative proportion of Sn in the AuSn alloy. (b) A second Sn absorption layer (17) is formed on the principal surface of a second substrate (11) the second Sn absorption layer being made of metal absorbing Sn from AuSn alloy and lowering a relative proportion of Sn in the AuSn alloy. (c) A solder layer (7) made of AuSn alloy is formed at least on one Sn absorption layer of the first and second Sn absorption layers. (d) The first and second substrates are bonded together by melting the solder layer in a state that the first and second substrates are in contact with each other, with the principal surfaces of the first and second substrates facing each other.
摘要翻译：（a）在第一基板（1）的主面上形成有第一Sn吸收层（5），第一Sn吸收层由AuSn合金的金属吸收Sn构成，并且降低AuSn合金中的Sn的相对比例。（b）在第二基板（11）的主表面上形成第二Sn吸收层（17），第二Sn吸收层由AuSn合金的金属吸收Sn制成，并降低AuSn合金中Sn的相对比例。（c）由AuSn合金制成的焊料层（7）形成在第一和第二Sn吸收层的至少一个Sn吸收层上。（d）第一和第二基板通过在第一和第二基板彼此接触的状态下熔化焊料层而彼此接合，第一和第二基板的主表面彼此面对。

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