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1. 发明授权

US07582233B2 Method of manufacturing directional coupler 失效
标题翻译：定向耦合器的制造方法
公开(公告)号：US07582233B2
公开(公告)日：2009-09-01
申请号：US11400246
申请日：2006-04-10
申请人： Tomoko Koyama , Takeo Kaneko , Taketomi Kamikawa , Norio Oguchi , Atsushi Harada
发明人： Tomoko Koyama , Takeo Kaneko , Taketomi Kamikawa , Norio Oguchi , Atsushi Harada
IPC分类号： G02B6/26
CPC分类号： G02B6/125 , G02B6/12002 , G02F1/3132 , G02F2001/3135
摘要： A method of manufacturing directional coupler includes forming a first waveguide over a substrate, forming a separate section on respective ends of the first waveguide, and forming a second waveguide stacked over the first waveguide, wherein the first waveguide and the second waveguide are patterned by ink-jet process. The first waveguide and the second waveguide may be formed so as to overlap each other. The method may further include forming a projecting portion on the substrate, wherein the first waveguide being formed on the projection portion.
摘要翻译：制造定向耦合器的方法包括在衬底上形成第一波导，在第一波导的相应端部上形成分开的部分，以及形成层叠在第一波导上的第二波导，其中第一波导和第二波导通过墨水喷射过程。第一波导和第二波导可以形成为彼此重叠。该方法还可以包括在基板上形成突出部分，其中第一波导形成在突出部分上。

2. 发明申请

US20060174657A1 Method of manufacturing directional coupler 失效
公开(公告)号：US20060174657A1
公开(公告)日：2006-08-10
申请号：US11400246
申请日：2006-04-10
申请人： Tomoko Koyama , Takeo Kaneko , Taketomi Kamikawa , Norio Oguchi , Atsushi Harada
发明人： Tomoko Koyama , Takeo Kaneko , Taketomi Kamikawa , Norio Oguchi , Atsushi Harada
IPC分类号： C03B19/01
CPC分类号： G02B6/125 , G02B6/12002 , G02F1/3132 , G02F2001/3135
摘要： A method of manufacturing directional coupler includes forming a first waveguide over a substrate, forming a separate section on respective ends of the first waveguide, and forming a second waveguide stacked over the first waveguide, wherein the first waveguide and the second waveguide are patterned by ink-jet process. The first waveguide and the second waveguide may be formed so as to overlap each other. The method may further include forming a projecting portion on the substrate, wherein the first waveguide being formed on the projection portion.

3. 发明授权

US06870182B2 Organic semiconductor device 有权
标题翻译：有机半导体器件
公开(公告)号：US06870182B2
公开(公告)日：2005-03-22
申请号：US10286902
申请日：2002-11-04
申请人： Tomoko Koyama , Takeo Kaneko , Taketomi Kamikawa , Norio Oguchi , Atsushi Harada
发明人： Tomoko Koyama , Takeo Kaneko , Taketomi Kamikawa , Norio Oguchi , Atsushi Harada
IPC分类号： H01L51/05 , H01L29/76 , H01L29/786 , H01L35/24 , H01L51/00
CPC分类号： H01L51/057
摘要： An organic semiconductor device of the present invention has an organic semiconductor layer disposed within a depression formed in a substrate; a drain electrode and a source electrode; and a gate electrode to face the organic semiconductor layer with a gate insulating layer interposed. Alternatively, an organic semiconductor device of the present invention has an insulating layer disposed on a substrate; an organic semiconductor layer disposed within a depression formed in the insulating layer; a drain electrode and a source electrode; and a gate electrode disposed to face the organic semiconductor layer with a gate insulating layer interposed.
摘要翻译：本发明的有机半导体器件具有设置在形成于基板的凹部内的有机半导体层，漏电极和源电极; 以及栅极电极，其间插入有栅极绝缘层来面向有机半导体层。或者，本发明的有机半导体器件具有设置在基板上的绝缘层; 设置在形成在绝缘层中的凹部内的有机半导体层; 漏电极和源电极; 以及设置为与所述有机半导体层相对的栅电极，所述栅极绝缘层被插入。

4. 发明授权

US07138764B2 Light-emitting device and electronic instrument 有权
公开(公告)号：US07138764B2
公开(公告)日：2006-11-21
申请号：US10268988
申请日：2002-10-11
申请人： Tomoko Koyama , Takeo Kaneko , Taketomi Kamikawa , Norio Oguchi , Atsushi Harada
发明人： Tomoko Koyama , Takeo Kaneko , Taketomi Kamikawa , Norio Oguchi , Atsushi Harada
IPC分类号： H05B33/00
CPC分类号： H01L51/5203 , H01L33/24 , H01L33/385 , H01L33/58 , H01L51/52 , H01L51/5271 , H01L51/5275 , H01L2251/5315 , H05B33/02 , H05B33/12 , H05B33/24
摘要： A light-emitting device includes a light-emitting layer capable of generating light by electroluminescence, a pair of electrodes applies an electric field to the light-emitting layer, and a substrate having a depression in a surface, and the light-emitting layer is disposed within the depression of the substrate.

5. 发明授权

US08569698B2 Thermal detector, thermal detection device, and electronic instrument 有权
标题翻译：热探测器，热检测装置和电子仪器
公开(公告)号：US08569698B2
公开(公告)日：2013-10-29
申请号：US13186775
申请日：2011-07-20
申请人： Jun Takizawa , Takafumi Noda , Taketomi Kamikawa , Mitsuhiro Yamamura
发明人： Jun Takizawa , Takafumi Noda , Taketomi Kamikawa , Mitsuhiro Yamamura
IPC分类号： G01J5/00
CPC分类号： G01J5/10 , G01J5/08 , G01J5/0853 , G01J5/34
摘要： A thermal detector has a thermal detection element in which a physical characteristic changes based on temperature, a light-absorbing member configured and arranged to collect heat and transmit collected heat to the thermal detection element, a support member mounting the thermal detection element on a first side with a second surface facing a cavity, and a support part supporting a portion of the support member. The light-absorbing member is a plate shaped member at least partially contacting a top part of the thermal detection element and having a portion overhanging to an outside from the top part of the thermal detection element in plan view.
摘要翻译：热检测器具有物理特性基于温度而变化的热检测元件，构造并布置成收集热量并将收集的热量传递到热检测元件的光吸收构件;将热检测元件安装在第一侧面具有面向空腔的第二表面和支撑所述支撑构件的一部分的支撑部分。光吸收构件是平板状的板状构件，其至少部分地接触热检测元件的顶部并具有从热检测元件的顶部向外伸出的部分。

6. 发明授权

US08039835B2 Semiconductor device, method for manufacturing the same, electro-optical device and electronic apparatus 有权
标题翻译：半导体装置及其制造方法，电光装置及电子装置
公开(公告)号：US08039835B2
公开(公告)日：2011-10-18
申请号：US11957012
申请日：2007-12-14
申请人： Musubu Ichikiwa , Kiyoshi Nakamura , Taketomi Kamikawa
发明人： Musubu Ichikiwa , Kiyoshi Nakamura , Taketomi Kamikawa
IPC分类号： H01L29/12
CPC分类号： H01L29/7869 , G02F1/1368 , H01L29/66969 , H01L29/78618 , H01L29/78696
摘要： A semiconductor device includes a substrate, a transparent oxide layer disposed on one surface side of the substrate, a gate disposed apart from the transparent oxide layer, and a gate insulating layer disposed between the transparent oxide layer and the gate. The transparent oxide layer includes a source, a drain, and a channel formed integrally between the source and the drain, and is made of a transparent oxide material as the main material. The gate provides an electric field to the channel. The gate insulating layer insulates the source and the drain from the gate. The average thickness of the channel is smaller than the average thickness of the source and the drain so that the source and the drain function as conductors and the channel functions as a semiconductor.
摘要翻译：半导体器件包括衬底，设置在衬底的一个表面侧上的透明氧化物层，与透明氧化物层分离的栅极以及设置在透明氧化物层和栅极之间的栅极绝缘层。透明氧化物层包括源极，漏极和在源极和漏极之间整体形成的沟道，并且由透明氧化物材料作为主要材料制成。门向通道提供电场。栅极绝缘层将源极和漏极与栅极绝缘。通道的平均厚度小于源极和漏极的平均厚度，使得作为导体和沟道的源极和漏极功能用作半导体。

7. 发明授权

US07960720B2 Transistor, transistor circuit, electrooptical device and electronic apparatus 有权
标题翻译：晶体管，晶体管电路，电光器件和电子设备
公开(公告)号：US07960720B2
公开(公告)日：2011-06-14
申请号：US12017782
申请日：2008-01-22
申请人： Taketomi Kamikawa , Masamitsu Inoue
发明人： Taketomi Kamikawa , Masamitsu Inoue
IPC分类号： H01L51/00
CPC分类号： H01L51/0554 , H01L51/0036 , H01L51/0039 , H01L51/0043
摘要： A transistor including a first gate electrode, a second gate electrode, a first gate insulating layer disposed between the first gate electrode and the second gate electrode, a first interlayer disposed between the first gate insulating layer and the second gate electrode and containing a first organic material, an organic semiconductor layer disposed between the first interlayer and the second gate electrode, a second gate insulating layer disposed between the organic semiconductor layer and the second gate electrode, and a source electrode and a drain electrode disposed between the first interlayer and the second gate insulating layer and injecting carriers into the organic semiconductor layer, wherein an ambipolar property is imparted to a part of the organic semiconductor layer that contacts with the first interlayer under an action of the first interlayer.
摘要翻译：一种晶体管，包括第一栅电极，第二栅电极，设置在第一栅电极和第二栅电极之间的第一栅极绝缘层，设置在第一栅绝缘层和第二栅电极之间并包含第一有机层的第一中间层材料，设置在第一中间层和第二栅电极之间的有机半导体层，设置在有机半导体层和第二栅极之间的第二栅极绝缘层，以及设置在第一中间层和第二栅电极之间的源电极和漏电极栅绝缘层和载流子注入到有机半导体层中，其中在第一中间层的作用下，向与第一中间层接触的部分有机半导体层施加双极性。

8. 发明授权

US08764287B2 Thermal detector, thermal detecting device, and electronic instrument 有权
标题翻译：热探测器，热检测装置和电子仪器
公开(公告)号：US08764287B2
公开(公告)日：2014-07-01
申请号：US13013084
申请日：2011-01-25
申请人： Taketomi Kamikawa
发明人： Taketomi Kamikawa
IPC分类号： G01J5/02 , G01J5/34 , G01J5/20
CPC分类号： G01J5/20 , G01J5/02 , G01J5/023 , G01J5/34
摘要： A thermal detector includes a thermal detecting element and a support member supporting the thermal detecting element and a wiring layer. The support member has an arm member connected to a mounting member with the first arm member having an arm base end section extending outwardly from the mounting member toward a first direction, the arm base section having a first width measured along a direction perpendicular to the first direction, and an arm body section having a proximal end portion extending from the arm base end section generally along an outer contour of the mounting member with the proximal end portion being spaced apart from an edge of the mounting member in the first direction. The proximal end portion of the arm body section has a second width measured along a direction perpendicular to a lengthwise direction of the arm body section that is narrower than the first width.
摘要翻译：热检测器包括热检测元件和支撑热检测元件的支撑构件和布线层。所述支撑构件具有连接到安装构件的臂构件，所述第一臂构件具有从所述安装构件向第一方向向外延伸的臂基端部，所述臂基部具有沿着垂直于所述第一方向的方向测量的第一宽度方向，以及具有从所述臂基端部延伸的基端部的臂主体部分，所述基端部大致沿着所述安装部件的外轮廓延伸，所述基端部沿所述第一方向与所述安装部件的边缘间隔开。臂本体部的基端部具有沿与臂主体部的长度方向垂直的方向测定的第二宽度，该长度方向比第一宽度窄。

9. 发明授权

US5804835A Method of operating a high temperature superconductive device comprising superconductive source, drain, and channel regions 失效
标题翻译：操作包括超导源极，漏极和沟道区的高温超导器件的方法
公开(公告)号：US5804835A
公开(公告)日：1998-09-08
申请号：US463322
申请日：1995-06-05
申请人： Taketomi Kamikawa , Eiji Natori , Setsuya Iwashita , Tatsuya Shimoda
发明人： Taketomi Kamikawa , Eiji Natori , Setsuya Iwashita , Tatsuya Shimoda
IPC分类号： H01L39/14 , H01L39/16 , H01L39/22 , H01L29/12
CPC分类号： H01L39/146 , H01L39/16
摘要： This is an invention of a superconductive device that is equipped with a first superconductive electrode, a second superconductive electrode and a junction that is made of a superconductive material that connects these superconductive electrodes, wherein there are 2-terminal or 3-terminal superconductive devices that use a junction that is in a superconductive state that is weaker than the first and the second superconductive electrodes or in a normal conductive state that is near the superconductive state. The differences between the critical current, the critical temperature, the pair potential and the carrier densities of the first and the second superconductive electrodes and the junction are used as a means of putting the junction in the states mentioned above. Based on the methods mentioned above, a superconductive device which has few pattern rule restrictions and which is easy to fabricate can be offered. And in the case of the 3-terminal superconductive device, the switching characteristics can be improved.
摘要翻译：这是一种超导装置的发明，该超导装置配备有第一超导电极，第二超导电极和由连接这些超导电极的超导材料制成的结，其中存在2端或3端超导装置，其中使用处于比第一和第二超导电极弱的超导状态的接合处或接近超导状态的正常导电状态。使用第一和第二超导电极和结的临界电流，临界温度，对电势和载流子密度之间的差异作为将结点置于上述状态的手段。基于上述方法，可以提供具有很少图案规则限制并且易于制造的超导装置。并且在3端子超导装置的情况下，可以提高开关特性。

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