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1. 发明授权

US06611015B2 Semiconductor device including dummy upper electrode 失效
标题翻译：半导体器件包括虚拟上电极
公开(公告)号：US06611015B2
公开(公告)日：2003-08-26
申请号：US09956001
申请日：2001-09-20
申请人： Tohru Ozaki , Iwao Kunishima , Toyota Morimoto , Hiroyuki Kanaya
发明人： Tohru Ozaki , Iwao Kunishima , Toyota Morimoto , Hiroyuki Kanaya
IPC分类号： H01L27108
CPC分类号： H01L27/11502 , H01L27/11507
摘要： A semiconductor memory device including a memory cell block having a plurality of memory transistors formed on a semiconductor substrate. The memory transistors include first and second impurity-diffused regions and a gate formed therebetween. A plurality of memory cells are also included in the memory cell block and have lower electrodes connected to the first impurity-diffused regions, ferroelectric films formed on the lower electrodes and first upper electrodes formed on the ferroelectric films and connected to the second impurity-diffused regions. Further included are block selecting transistors formed on the semiconductor substrate and being connected to one end of the memory cell block. Second upper electrodes are also formed adjoined to the block selecting transistors and being disconnected from the first upper electrode of the memory cells.
摘要翻译：一种半导体存储器件，包括具有形成在半导体衬底上的多个存储晶体管的存储单元块。存储晶体管包括第一和第二杂质扩散区域以及在它们之间形成的栅极。多个存储单元也包括在存储单元块中，并且具有连接到第一杂质扩散区的下电极，形成在下电极上的铁电膜和形成在铁电体膜上的第一上电极并连接到第二杂质扩散区地区。还包括形成在半导体衬底上并连接到存储单元块的一端的块选择晶体管。第二上电极也形成为与块选择晶体管相邻并且与存储单元的第一上电极断开连接。

2. 发明授权

US07022531B2 Semiconductor memory device and method of fabricating the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07022531B2
公开(公告)日：2006-04-04
申请号：US10618616
申请日：2003-07-15
申请人： Tohru Ozaki , Iwao Kunishima , Toyota Morimoto , Hiroyuki Kanaya
发明人： Tohru Ozaki , Iwao Kunishima , Toyota Morimoto , Hiroyuki Kanaya
IPC分类号： H01L21/00
CPC分类号： H01L27/11502 , H01L27/11507
摘要： A semiconductor memory device including a memory cell block having a plurality of memory transistors formed on a semiconductor substrate. The memory transistors include first and second impurity-diffused regions and a gate formed therebetween. A plurality of memory cells are also included in the memory cell block and have lower electrodes connected to the first impurity-diffused regions, ferroelectric films formed on the lower electrodes and first upper electrodes formed on the ferroelectric films and connected to the second impurity-diffused regions. Further included are block selecting transistors formed on the semiconductor substrate and being connected to one end of the memory cell block. Second upper electrodes are also formed adjoined to the block selecting transistors and being disconnected from the first upper electrode of the memory cells.
摘要翻译：一种半导体存储器件，包括具有形成在半导体衬底上的多个存储晶体管的存储单元块。存储晶体管包括第一和第二杂质扩散区域以及在它们之间形成的栅极。多个存储单元也包括在存储单元块中，并且具有连接到第一杂质扩散区的下电极，形成在下电极上的铁电膜和形成在铁电体膜上的第一上电极并连接到第二杂质扩散区地区。还包括形成在半导体衬底上并连接到存储单元块的一端的块选择晶体管。第二上电极也形成为与块选择晶体管相邻并且与存储单元的第一上电极断开连接。

3. 发明申请

US20050176199A1 Semiconductor memory device and method of fabricating the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20050176199A1
公开(公告)日：2005-08-11
申请号：US10618616
申请日：2003-07-15
申请人： Tohru Ozaki , Iwao Kunishima , Toyota Morimoto , Hiroyuki Kanaya
发明人： Tohru Ozaki , Iwao Kunishima , Toyota Morimoto , Hiroyuki Kanaya
IPC分类号： H01L27/105 , H01L21/8246 , H01L27/115 , H01L21/336
CPC分类号： H01L27/11502 , H01L27/11507
摘要： A semiconductor memory device including a memory cell block having a plurality of memory transistors formed on a semiconductor substrate. The memory transistors include first and second impurity-diffused regions and a gate formed therebetween. A plurality of memory cells are also included in the memory cell block and have lower electrodes connected to the first impurity-diffused regions, ferroelectric films formed on the lower electrodes and first upper electrodes formed on the ferroelectric films and connected to the second impurity-diffused regions. Further included are block selecting transistors formed on the semiconductor substrate and being connected to one end of the memory cell block. Second upper electrodes are also formed adjoined to the block selecting transistors and being disconnected from the first upper electrode of the memory cells.
摘要翻译：一种半导体存储器件，包括具有形成在半导体衬底上的多个存储晶体管的存储单元块。存储晶体管包括第一和第二杂质扩散区域以及在它们之间形成的栅极。多个存储单元也包括在存储单元块中，并且具有连接到第一杂质扩散区的下电极，形成在下电极上的铁电膜和形成在铁电体膜上的第一上电极并连接到第二杂质扩散区地区。还包括形成在半导体衬底上并连接到存储单元块的一端的块选择晶体管。第二上电极也形成为与块选择晶体管相邻并且与存储单元的第一上电极断开连接。

4. 发明授权

US07400005B2 Semiconductor memory device having ferroelectric capacitors with hydrogen barriers 失效
标题翻译：具有具有氢屏障的铁电电容器的半导体存储器件
公开(公告)号：US07400005B2
公开(公告)日：2008-07-15
申请号：US11142441
申请日：2005-06-02
申请人： Yoshinori Kumura , Iwao Kunishima , Hiroyuki Kanaya , Tohru Ozaki , Kazuhiro Tomioka
发明人： Yoshinori Kumura , Iwao Kunishima , Hiroyuki Kanaya , Tohru Ozaki , Kazuhiro Tomioka
IPC分类号： H01L29/92
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57 , H01L28/65
摘要： A semiconductor memory device, which prevents the penetration of hydrogen or moisture to a ferroelectric capacitor from its surrounding area including a contact plug portion, comprises a ferroelectric capacitor formed above a semiconductor substrate, a first hydrogen barrier film formed on an upper surface of the ferroelectric capacitor to work as a mask in the formation of the ferroelectric capacitor, a second hydrogen barrier film formed on the upper surface and a side face of the ferroelectric capacitor including on the first hydrogen barrier film, and a contact plug disposed through the first and second hydrogen barrier films, and connected to an upper electrode of the ferroelectric capacitor, a side face thereof being surrounded with the hydrogen barrier films.
摘要翻译：一种半导体存储器件，其防止氢或水分从其包括接触插塞部分的周围区域渗入铁电电容器，包括形成在半导体衬底上的强电介质电容器，形成在铁电体的上表面上的第一氢阻挡膜电容器在形成铁电电容器时用作掩模，在上表面上形成的第二氢阻挡膜和包括在第一氢阻挡膜上的强电介质电容器的侧面，以及通过第一和第二氢阻挡膜，并连接到铁电电容器的上电极，其侧面被氢阻挡膜包围。

5. 发明授权

US07095068B2 Semiconductor memory device having ferroelectric capacitor and method of manufacturing the same 有权
标题翻译：具有铁电电容器的半导体存储器件及其制造方法
公开(公告)号：US07095068B2
公开(公告)日：2006-08-22
申请号：US10455376
申请日：2003-06-06
申请人： Yoshinori Kumura , Iwao Kunishima , Tohru Ozaki , Hiroyuki Kanaya , Shinichi Watanabe
发明人： Yoshinori Kumura , Iwao Kunishima , Tohru Ozaki , Hiroyuki Kanaya , Shinichi Watanabe
IPC分类号： H01L29/76 , H01L27/108
CPC分类号： H01L27/11502 , H01L27/11507
摘要： A semiconductor memory device includes a semiconductor substrate, a first transistor formed on the semiconductor substrate and including a first gate electrode and first and second diffusion layers, a first contact connected to the first diffusion layer, a first conductive oxygen barrier film electrically connected to the first contact and covering at least the upper surface of the first contact, a first ferroelectric capacitor including a first electrode, a second electrode, and a first ferroelectric film interposed between the first and second electrodes, and a first connecting member connected to the first electrode and to the first conductive oxygen barrier film.
摘要翻译：半导体存储器件包括半导体衬底，形成在半导体衬底上的第一晶体管，包括第一栅电极和第一和第二扩散层，与第一扩散层连接的第一触点，与第一导电氧阻隔膜电连接的第一导电氧阻隔膜首先接触并且至少覆盖第一接触件的上表面;第一铁电电容器，包括插入在第一和第二电极之间的第一电极，第二电极和第一铁电体膜;以及连接到第一电极的第一连接构件和第一导电氧阻隔膜。

6. 发明申请

US20060180894A1 Semiconductor memory device and its manufacturing method 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20060180894A1
公开(公告)日：2006-08-17
申请号：US11142441
申请日：2005-06-02
申请人： Yoshinori Kumura , Iwao Kunishima , Hiroyuki Kanaya , Tohru Ozaki , Kazuhiro Tomioka
发明人： Yoshinori Kumura , Iwao Kunishima , Hiroyuki Kanaya , Tohru Ozaki , Kazuhiro Tomioka
IPC分类号： H01L29/00
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57 , H01L28/65
摘要： A semiconductor memory device, which prevents the penetration of hydrogen or moisture to a ferroelectric capacitor from its surrounding area including a contact plug portion, comprises a ferroelectric capacitor formed above a semiconductor substrate, a first hydrogen barrier film formed on an upper surface of the ferroelectric capacitor to work as a mask in the formation of the ferroelectric capacitor, a second hydrogen barrier film formed on the upper surface and a side face of the ferroelectric capacitor including on the first hydrogen barrier film, and a contact plug disposed through the first and second hydrogen barrier films, and connected to an upper electrode of the ferroelectric capacitor, a side face thereof being surrounded with the hydrogen barrier films.
摘要翻译：一种半导体存储器件，其防止氢或水分从其包括接触插塞部分的周围区域渗入铁电电容器，包括形成在半导体衬底上的强电介质电容器，形成在铁电体的上表面上的第一氢阻挡膜电容器在形成铁电电容器时用作掩模，在上表面上形成的第二氢阻挡膜和包括在第一氢阻挡膜上的强电介质电容器的侧面，以及通过第一和第二氢阻挡膜，并连接到铁电电容器的上电极，其侧面被氢阻挡膜包围。

7. 发明授权

US06972990B2 Ferro-electric memory device and method of manufacturing the same 失效
标题翻译：铁电记忆装置及其制造方法
公开(公告)号：US06972990B2
公开(公告)日：2005-12-06
申请号：US10858441
申请日：2004-06-02
申请人： Yoshinori Kumura , Tohru Ozaki , Hiroyuki Kanaya , Iwao Kunishima , Yoshiro Shimojo
发明人： Yoshinori Kumura , Tohru Ozaki , Hiroyuki Kanaya , Iwao Kunishima , Yoshiro Shimojo
IPC分类号： H01L27/10 , G11C11/14 , G11C11/22 , H01L21/8246 , H01L27/105
CPC分类号： G11C11/22 , H01L27/105 , H01L27/11502 , H01L27/11507 , H01L27/11509 , H01L28/57
摘要： A ferro-electric memory device includes a gate electrode which is formed on a semiconductor substrate, first and second diffusion layers which are formed in the semiconductor substrate, a first contact which is electrically connected to the first diffusion layer, a first oxygen barrier film having insulating properties, which is formed on the first contact, a second contact which is electrically connected to the first contact, a second oxygen barrier film having insulating properties, which is formed on the second contact, a ferro-electric capacitor which has a lower electrode, a ferro-electric film, and an upper electrode, a third contact which is electrically connected to the upper electrode, a first interconnection which is electrically connected to the second and third contacts, and a third oxygen barrier film having insulating properties, which is arranged between the ferro-electric capacitor and the second contact and brought into contact with the first oxygen barrier film.
摘要翻译：铁电存储器件包括形成在半导体衬底上的栅电极，形成在半导体衬底中的第一和第二扩散层，与第一扩散层电连接的第一触点，具有第一氧阻隔膜，绝缘性能，其形成在第一接触件上，与第一接触件电连接的第二接触件，形成在第二接触件上的具有绝缘性能的第二氧阻隔膜，具有下电极的铁电电容器铁电膜和上电极，与上电极电连接的第三触点，与第二触头和第三触头电连接的第一互连件，以及具有绝缘性能的第三隔氧膜，其为布置在铁电电容器和第二触点之间并与第一氧阻隔膜接触。

8. 发明申请

US20050207202A1 FERRO-ELECTRIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：电动记忆体装置及其制造方法
公开(公告)号：US20050207202A1
公开(公告)日：2005-09-22
申请号：US10858441
申请日：2004-06-02
申请人： Yoshinori Kumura , Tohru Ozaki , Hiroyuki Kanaya , Iwao Kunishima , Yoshiro Shimojo
发明人： Yoshinori Kumura , Tohru Ozaki , Hiroyuki Kanaya , Iwao Kunishima , Yoshiro Shimojo
IPC分类号： H01L27/10 , G11C11/14 , G11C11/22 , H01L21/8246 , H01L27/105
CPC分类号： G11C11/22 , H01L27/105 , H01L27/11502 , H01L27/11507 , H01L27/11509 , H01L28/57
摘要： A ferro-electric memory device includes a gate electrode which is formed on a semiconductor substrate, first and second diffusion layers which are formed in the semiconductor substrate, a first contact which is electrically connected to the first diffusion layer, a first oxygen barrier film having insulating properties, which is formed on the first contact, a second contact which is electrically connected to the first contact, a second oxygen barrier film having insulating properties, which is formed on the second contact, a ferro-electric capacitor which has a lower electrode, a ferro-electric film, and an upper electrode, a third contact which is electrically connected to the upper electrode, a first interconnection which is electrically connected to the second and third contacts, and a third oxygen barrier film having insulating properties, which is arranged between the ferro-electric capacitor and the second contact and brought into contact with the first oxygen barrier film.
摘要翻译：铁电存储器件包括形成在半导体衬底上的栅电极，形成在半导体衬底中的第一和第二扩散层，与第一扩散层电连接的第一触点，具有第一氧阻隔膜，绝缘性能，其形成在第一接触件上，与第一接触件电连接的第二接触件，形成在第二接触件上的具有绝缘性能的第二氧阻隔膜，具有下电极的铁电电容器铁电膜和上电极，与上电极电连接的第三触点，与第二触头和第三触头电连接的第一互连件，以及具有绝缘性能的第三隔氧膜，其为布置在铁电电容器和第二触点之间并与第一氧阻隔膜接触。

9. 发明授权

US06982453B2 Semicondutor device having ferroelectric capacitor and hydrogen barrier film and manufacturing method thereof 失效
标题翻译：具有铁电电容器和氢阻挡膜的半导体器件及其制造方法
公开(公告)号：US06982453B2
公开(公告)日：2006-01-03
申请号：US10602764
申请日：2003-06-25
申请人： Hiroyuki Kanaya , Toyota Morimoto , Osamu Hidaka , Yoshinori Kumura , Iwao Kunishima , Tsuyoshi Iwamoto
发明人： Hiroyuki Kanaya , Toyota Morimoto , Osamu Hidaka , Yoshinori Kumura , Iwao Kunishima , Tsuyoshi Iwamoto
IPC分类号： H01L27/11 , G01C11/22
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A semiconductor device having a semiconductor substrate; an insulating film formed on said semiconductor substrate; a ferroelectric capacitor having a lower electrode, a ferroelectric film and an upper electrode which are stacked sequentially on the insulating film; a first hydrogen barrier film; a first inter-layer insulating film covering said ferroelectric capacitor; and a second inter-layer insulating film stacked on the first inter-layer insulating film, the first hydrogen barrier film being interposed between the first and second interlayer insulating films is proposed.
摘要翻译：一种具有半导体衬底的半导体器件; 形成在所述半导体衬底上的绝缘膜; 具有下电极，强电介质膜和上电极的铁电电容器，其顺序层叠在绝缘膜上; 第一氢阻挡膜; 覆盖所述铁电电容器的第一层间绝缘膜; 以及叠层在第一层间绝缘膜上的第二层间绝缘膜，提出介于第一和第二层间绝缘膜之间的第一氢阻挡膜。

10. 发明授权

US06611014B1 Semiconductor device having ferroelectric capacitor and hydrogen barrier film and manufacturing method thereof 失效
标题翻译：具有铁电电容器和氢阻挡膜的半导体器件及其制造方法
公开(公告)号：US06611014B1
公开(公告)日：2003-08-26
申请号：US09570026
申请日：2000-05-12
申请人： Hiroyuki Kanaya , Toyota Morimoto , Osamu Hidaka , Yoshinori Kumura , Iwao Kunishima , Tsuyoshi Iwamoto
发明人： Hiroyuki Kanaya , Toyota Morimoto , Osamu Hidaka , Yoshinori Kumura , Iwao Kunishima , Tsuyoshi Iwamoto
IPC分类号： H01L2966
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A semiconductor device having a semiconductor substrate; an insulating film formed on said semiconductor substrate; a ferroelectric capacitor having a lower electrode, a ferroelectric film and an upper electrode which are stacked sequentially on the insulating film; a first hydrogen barrier film; a first inter-layer insulating film covering said ferroelectric capacitor; and a second inter-layer insulating film stacked on the first inter-layer insulating film, the first hydrogen barrier film being interposed between the first and second interlayer insulating films is proposed.
摘要翻译：一种具有半导体衬底的半导体器件; 形成在所述半导体衬底上的绝缘膜; 具有下电极，强电介质膜和上电极的铁电电容器，其顺序层叠在绝缘膜上; 第一氢阻挡膜; 覆盖所述铁电电容器的第一层间绝缘膜; 以及叠层在第一层间绝缘膜上的第二层间绝缘膜，提出介于第一和第二层间绝缘膜之间的第一氢阻挡膜。

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