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1. 发明授权

US08817144B2 Photoelectric conversion apparatus 有权
标题翻译：光电转换装置
公开(公告)号：US08817144B2
公开(公告)日：2014-08-26
申请号：US13365146
申请日：2012-02-02
申请人： Taro Kato , Mineo Shimotsusa , Hiroaki Sano , Takeshi Ichikawa , Yasuhiro Sekine , Mahito Shinohara , Genzo Momma
发明人： Taro Kato , Mineo Shimotsusa , Hiroaki Sano , Takeshi Ichikawa , Yasuhiro Sekine , Mahito Shinohara , Genzo Momma
IPC分类号： H01L21/00
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14629 , H01L27/1463
摘要： A photoelectric conversion apparatus includes a semiconductor substrate having a photoelectric conversion portion. An insulator is provided on the semiconductor substrate. The insulator has a hole corresponding to the photoelectric conversion portion. A waveguide member is provided in the hole. An in-layer lens is provided on a side of the waveguide member farther from the semiconductor substrate. A first intermediate member is provided between the waveguide member and the in-layer lens. The first intermediate member has a lower refractive index than the in-layer lens.
摘要翻译：光电转换装置包括具有光电转换部分的半导体衬底。绝缘体设置在半导体衬底上。绝缘体具有与光电转换部对应的孔。波导构件设置在孔中。在距离半导体衬底更远的波导构件的一侧设置有层内透镜。第一中间构件设置在波导构件和内层透镜之间。第一中间构件具有比层内透镜低的折射率。

2. 发明申请

US20120200751A1 PHOTOELECTRIC CONVERSION APPARATUS 有权
标题翻译：光电转换装置
公开(公告)号：US20120200751A1
公开(公告)日：2012-08-09
申请号：US13365146
申请日：2012-02-02
申请人： Taro Kato , Mineo Shimotsusa , Hiroaki Sano , Takeshi Ichikawa , Yasuhiro Sekine , Mahito Shinohara , Genzo Momma
发明人： Taro Kato , Mineo Shimotsusa , Hiroaki Sano , Takeshi Ichikawa , Yasuhiro Sekine , Mahito Shinohara , Genzo Momma
IPC分类号： H04N5/335
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14629 , H01L27/1463
摘要： A photoelectric conversion apparatus includes a semiconductor substrate having a photoelectric conversion portion. An insulator is provided on the semiconductor substrate. The insulator has a hole corresponding to the photoelectric conversion portion. A waveguide member is provided in the hole. An in-layer lens is provided on a side of the waveguide member farther from the semiconductor substrate. A first intermediate member is provided between the waveguide member and the in-layer lens. The first intermediate member has a lower refractive index than the in-layer lens.
摘要翻译：光电转换装置包括具有光电转换部分的半导体衬底。绝缘体设置在半导体衬底上。绝缘体具有与光电转换部对应的孔。波导构件设置在孔中。在距离半导体衬底更远的波导构件的一侧设置有层内透镜。第一中间构件设置在波导构件和内层透镜之间。第一中间构件具有比层内透镜低的折射率。

3. 发明申请

US20120199725A1 PHOTOELECTRIC CONVERSION ELEMENT, AND PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME 有权
标题翻译：光电转换元件和使用该光电转换元件的光电转换装置和成像系统
公开(公告)号：US20120199725A1
公开(公告)日：2012-08-09
申请号：US13364041
申请日：2012-02-01
申请人： Mineo Shimotsusa , Taro Kato , Yasuhiro Sekine , Mahito Shinohara , Takeshi Ichikawa , Genzo Momma
发明人： Mineo Shimotsusa , Taro Kato , Yasuhiro Sekine , Mahito Shinohara , Takeshi Ichikawa , Genzo Momma
IPC分类号： H01L27/146 , G01J1/42
CPC分类号： H01L27/14629 , H01L27/14627
摘要： A light condensing member focuses light, which is incident upon a first area of the light condensing member corresponding to an opening portion of an insulation film, in an upper portion region of a light path member arranged within the opening portion, the insulation film having an upper face extending from the opening portion, and the light path member having a lower face in a region corresponding to a light receiving face of an photoelectric conversion portion.
摘要翻译：聚光部件将布置在开口部内的光路部件的上部区域中入射到聚光部件的与绝缘膜的开口部对应的第一区域的光聚焦，该绝缘膜具有上表面从开口部分延伸，并且光路部件在与光电转换部分的光接收面对应的区域中具有下表面。

4. 发明授权

US08878115B2 Photoelectric conversion element, and photoelectric conversion apparatus and imaging system having a light guide 有权
标题翻译：光电转换元件，以及具有光导的光电转换装置和成像系统
公开(公告)号：US08878115B2
公开(公告)日：2014-11-04
申请号：US13364041
申请日：2012-02-01
申请人： Mineo Shimotsusa , Taro Kato , Yasuhiro Sekine , Mahito Shinohara , Takeshi Ichikawa , Genzo Momma
发明人： Mineo Shimotsusa , Taro Kato , Yasuhiro Sekine , Mahito Shinohara , Takeshi Ichikawa , Genzo Momma
IPC分类号： H01L27/00 , H01L27/146
CPC分类号： H01L27/14629 , H01L27/14627
摘要： A light condensing member focuses light, which is incident upon a first area of the light condensing member corresponding to an opening portion of an insulation film, in an upper portion region of a light path member arranged within the opening portion, the insulation film having an upper face extending from the opening portion, and the light path member having a lower face in a region corresponding to a light receiving face of an photoelectric conversion portion.
摘要翻译：聚光部件将布置在开口部内的光路部件的上部区域中入射到聚光部件的与绝缘膜的开口部对应的第一区域的光聚焦，该绝缘膜具有上表面从开口部分延伸，并且光路部件在与光电转换部分的光接收面对应的区域中具有下表面。

5. 发明授权

US09293493B2 Photoelectric conversion apparatus and image sensing system 有权
标题翻译：光电转换装置及影像感应系统
公开(公告)号：US09293493B2
公开(公告)日：2016-03-22
申请号：US13364230
申请日：2012-02-01
申请人： Masahiro Kobayashi , Masaki Kurihara , Takeshi Ichikawa , Yasuhiro Sekine , Mahito Shinohara , Taro Kato , Genzo Momma
发明人： Masahiro Kobayashi , Masaki Kurihara , Takeshi Ichikawa , Yasuhiro Sekine , Mahito Shinohara , Taro Kato , Genzo Momma
IPC分类号： H01L27/146
CPC分类号： H01L27/14629 , H01L27/14623 , H01L27/14627
摘要： A photoelectric conversion apparatus at least includes an insulating film, a plurality of high-refractive-index members provided so as to correspond respectively to individual photoelectric conversion portions, being surrounded by the insulating film and having a refractive index higher than the refractive index of the insulating film, and a high-refractive-index film provided on the insulating film so as to connect the plurality of high-refractive-index members to one another and having a refractive index higher than the refractive index of the insulating film, and lens portions lying next to each other from among a plurality of lens portions border each other.
摘要翻译：一种光电转换装置至少包括绝缘膜，多个高折射率元件，被设置为分别对应于各个光电转换部分，被绝缘膜围绕并具有高于折射率的折射率绝缘膜和设置在所述绝缘膜上的高折射率膜，以便将所述多个高折射率元件彼此连接并且具有高于所述绝缘膜的折射率的折射率，以及透镜部分在彼此相邻的多个透镜部中彼此相邻放置。

6. 发明申请

US20120200728A1 PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE SENSING SYSTEM 有权
标题翻译：光电转换装置和图像传感系统
公开(公告)号：US20120200728A1
公开(公告)日：2012-08-09
申请号：US13364230
申请日：2012-02-01
申请人： Masahiro Kobayashi , Masaki Kurihara , Takeshi Ichikawa , Yasuhiro Sekine , Mahito Shinohara , Taro Kato , Genzo Momma
发明人： Masahiro Kobayashi , Masaki Kurihara , Takeshi Ichikawa , Yasuhiro Sekine , Mahito Shinohara , Taro Kato , Genzo Momma
IPC分类号： H04N5/228 , H01L31/0232
CPC分类号： H01L27/14629 , H01L27/14623 , H01L27/14627
摘要： A photoelectric conversion apparatus at least includes an insulating film, a plurality of high-refractive-index members provided so as to correspond respectively to individual photoelectric conversion portions, being surrounded by the insulating film and having a refractive index higher than the refractive index of the insulating film, and a high-refractive-index film provided on the insulating film so as to connect the plurality of high-refractive-index members to one another and having a refractive index higher than the refractive index of the insulating film, and lens portions lying next to each other from among a plurality of lens portions border each other.
摘要翻译：一种光电转换装置至少包括绝缘膜，多个高折射率元件，被设置为分别对应于各个光电转换部分，被绝缘膜围绕并具有高于折射率的折射率绝缘膜和设置在所述绝缘膜上的高折射率膜，以便将所述多个高折射率元件彼此连接并且具有高于所述绝缘膜的折射率的折射率，以及透镜部分在彼此相邻的多个透镜部中彼此相邻放置。

7. 发明授权

US08436406B2 Solid-state image sensing device and camera system using the same 有权
标题翻译：固态摄像装置和相机系统采用相同的方式
公开(公告)号：US08436406B2
公开(公告)日：2013-05-07
申请号：US12727469
申请日：2010-03-19
申请人： Mahito Shinohara , Shunsuke Inoue
发明人： Mahito Shinohara , Shunsuke Inoue
IPC分类号： H01L31/062
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14632 , H01L27/14643 , H01L27/14654 , H01L27/14656
摘要： A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first and second conductivity types are opposite to each other. The first transistor has a first-conductivity-type drain region formed in the second-conductivity-type semiconductor region to transfer signal charge to the drain region. The second transistor has a source region and a drain region which are formed in the second-conductivity-type semiconductor region and which have the first conductivity type. At least one second-conductivity-type potential barrier is provided under the drain region of the first transistor and the source region and/or the drain region of the second transistor.
摘要翻译：固态图像感测装置包括多个像素。每个像素具有光电二极管，第一晶体管和第二晶体管。光电二极管由第一导电型半导体区域和第二导电型半导体区域构成。第一和第二导电类型彼此相反。第一晶体管具有形成在第二导电型半导体区域中的第一导电型漏极区域，以将信号电荷转移到漏极区域。第二晶体管具有形成在第二导电型半导体区域中并且具有第一导电类型的源极区和漏极区。在第一晶体管的漏极区域和第二晶体管的源极区域和/或漏极区域的下方提供至少一个第二导电型势垒。

8. 发明授权

US08350942B2 Solid-state imaging apparatus and driving method therefor 有权
标题翻译：固态成像装置及其驱动方法
公开(公告)号：US08350942B2
公开(公告)日：2013-01-08
申请号：US12815538
申请日：2010-06-15
申请人： Mahito Shinohara
发明人： Mahito Shinohara
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/335 , H04N5/3594 , H04N5/361
摘要： A solid-state imaging apparatus includes a photoelectric conversion unit for generating and accumulating an electric charge according to an incident light, a floating diffusion for accumulating electric charges, a transfer transistor for transferring electric charges accumulated in the photoelectric conversion unit to the floating diffusion unit, and a reset transistor for resetting a voltage according to electric charges accumulated in the floating diffusion unit. In addition, a drive circuit intermittently applies to a gate of the transfer transistor a pulse having a first potential which is intermediate between a transfer potential for transferring electric charges and a non-transfer potential for disabling transfer of electric charges and applies to a gate of the reset transistor a second potential lower than the potential of the pulse for resetting voltage of the floating diffusion unit and higher than the first potential, during accumulation of electric charges in the photoelectric conversion unit.
摘要翻译：一种固态成像装置，包括：用于根据入射光产生和累积电荷的光电转换单元，用于累积电荷的浮动扩散;用于将积累在光电转换单元中的电荷转移到浮动扩散单元的转移晶体管以及复位晶体管，用于根据浮动扩散单元中累积的电荷来复位电压。此外，驱动电路间歇地向转移晶体管的栅极施加具有第一电位的脉冲，该第一电位介于用于传送电荷的转移电位之间的中间和用于禁止电荷转移的非转移电位，并施加到所述复位晶体管在所述光电转换单元中的电荷积累期间具有低于用于复位所述浮动扩散单元的电压并高于所述第一电位的脉冲的电位的第二电位。

9. 发明授权

US08345137B2 Solid-state image pickup apparatus and camera with two-dimensional power supply wiring 有权
标题翻译：固态摄像装置和具有二维电源接线的摄像机
公开(公告)号：US08345137B2
公开(公告)日：2013-01-01
申请号：US12671043
申请日：2009-02-26
申请人： Mahito Shinohara , Masaaki Iwane , Yukihiro Kuroda
发明人： Mahito Shinohara , Masaaki Iwane , Yukihiro Kuroda
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H01L27/14603 , H01L27/14641
摘要： A solid-state image pickup apparatus includes a pixel area in which pixels each having at least a photoelectric conversion unit and an amplification transistor for amplifying and outputting a signal of the photoelectric conversion unit are two-dimensionally arranged in horizontal and vertical directions, wherein a power supply wiring, which extends in a vertical direction along pixel boundaries of horizontal and vertical directions while meandering, is arranged on one of two pixel lines adjoining to each other in the horizontal direction in the pixel area, and the power supply wiring is connected to one of a source and a drain of the amplification transistor on each of the two pixel lines. Thus, it is possible to provide a high-sensitivity and high-image-quality amplified solid-state image pickup apparatus in which a difference of sensitivities at one-line intervals is small.
摘要翻译：固体摄像装置包括其中至少具有光电转换单元的像素和用于放大和输出光电转换单元的信号的放大晶体管的像素区域在水平和垂直方向上二维排列的像素区域，其中，沿着水平方向和垂直方向的像素边界沿着垂直方向延伸的电源布线，同时蜿蜒地布置在像素区域中在水平方向上彼此相邻的两个像素线之一，并且电源布线连接到两个像素线中的每一个上的放大晶体管的源极和漏极之一。因此，可以提供其中一行间隔的灵敏度差小的高灵敏度和高图像质量的放大固态图像拾取装置。

10. 发明申请

US20120196429A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120196429A1
公开(公告)日：2012-08-02
申请号：US13349062
申请日：2012-01-12
申请人： Tomoyuki Tezuka , Mahito Shinohara , Yasuhiro Kawabata
发明人： Tomoyuki Tezuka , Mahito Shinohara , Yasuhiro Kawabata
IPC分类号： H01L21/266
CPC分类号： H01L27/14643 , H01L21/2652 , H01L21/266 , H01L27/14689 , H01L29/78
摘要： A method of manufacturing a semiconductor device that includes a semiconductor substrate is provided. The method includes: exposing a photoresist coated on the semiconductor substrate using a photomask including a plurality of regions having different light transmittances; developing the photoresist to form a resist pattern including a plurality of regions having different thicknesses that depend on an exposure amount of the photoresist; and implanting impurity ions into the semiconductor substrate through the plurality of regions of the resist pattern having different thicknesses to form a plurality of impurity regions whose depths from a surface of the semiconductor substrate to peak positions are different from each other. The depths to the peak positions depend on the thickness of the resist pattern through which the implanted impurity ions pass.
摘要翻译：提供一种制造包括半导体衬底的半导体器件的方法。该方法包括：使用包括具有不同光透射率的多个区域的光掩模曝光涂覆在半导体衬底上的光致抗蚀剂; 显影光致抗蚀剂以形成包括取决于光致抗蚀剂的曝光量的具有不同厚度的多个区域的抗蚀剂图案; 以及通过具有不同厚度的抗蚀剂图案的多个区域将杂质离子注入到半导体衬底中，以形成从半导体衬底的表面到峰值位置的深度彼此不同的多个杂质区域。峰位置的深度取决于注入的杂质离子通过的抗蚀剂图案的厚度。

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