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1. 发明申请

US20050221000A1 Method of forming a metal layer 审中-公开
标题翻译：形成金属层的方法
公开(公告)号：US20050221000A1
公开(公告)日：2005-10-06
申请号：US10813680
申请日：2004-03-31
申请人： Taro Ikeda , Tsukasa Matsuda , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
发明人： Taro Ikeda , Tsukasa Matsuda , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
IPC分类号： C23C16/02 , C23C16/16 , C23C16/509 , B05D3/00 , C23C16/00 , H05H1/24
CPC分类号： C23C16/5096 , C23C16/02 , C23C16/16
摘要： A method and a processing tool are provided for forming a metal layer with improved morphology on a substrate. The method includes pre-treating the substrate by exposing the substrate to excited species in a plasma, exposing the pre-treated substrate to a process gas containing a metal-carbonyl precursor, and forming a metal layer on the pre-treated substrate surface by a chemical vapor deposition process. The metal-carbonyl precursor can contain W(CO)6, Ni(CO)4, Mo(CO)6, CO2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, or Ru3(CO)12 or any combination thereof, and the metal layer can contain W, Ni, Mo, Co, Rh, Re, Cr, or Ru, or any combination thereof, respectively.
摘要翻译：提供了一种用于在衬底上形成具有改善的形态的金属层的方法和加工工具。该方法包括通过将衬底暴露于等离子体中的激发物质来预处理衬底，将预处理的衬底暴露于含有羰基金属前体的工艺气体中，以及在预处理的衬底表面上形成金属层化学气相沉积工艺。金属羰基前体可以含有W（CO）6，Ni（CO）4，Mo（CO）6，CO， 2（CO）8，Rh 4（CO）12，Re 2（CO） Cr（CO）6或Ru 3（CO）12 12或其任何组合，和金属层可以分别含有W，Ni，Mo，Co，Rh，Re，Cr或Ru，或其任何组合。

2. 发明申请

US20050069641A1 Method for depositing metal layers using sequential flow deposition 审中-公开
标题翻译：使用顺序流沉积沉积金属层的方法
公开(公告)号：US20050069641A1
公开(公告)日：2005-03-31
申请号：US10673910
申请日：2003-09-30
申请人： Tsukasa Matsuda , Taro Ikeda , Tatsuo Hatano , Mitsuhiro Tachibana , Hideaki Yamasaki , Gert Leusink , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
发明人： Tsukasa Matsuda , Taro Ikeda , Tatsuo Hatano , Mitsuhiro Tachibana , Hideaki Yamasaki , Gert Leusink , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
IPC分类号： C23C16/16 , C23C16/44 , C23C16/455 , H01L21/285 , B05D3/02 , C23C16/00
CPC分类号： C23C16/4408 , C23C16/16 , C23C16/45523 , H01L21/28562
摘要： A method for depositing metal layers with good surface morphology using sequential flow deposition includes alternately exposing a substrate in a process chamber to a metal-carbonyl precursor gas and a reducing gas. During exposure with the metal-carbonyl precursor gas, a thin metal layer is deposited on the substrate, and subsequent exposure of the metal layer to the reducing gas aids in the removal of reaction by-products from the metal layer. The metal-carbonyl precursor gas and a reducing gas exposure steps can be repeated until a metal layer with a desired thickness is achieved. The metal-carbonyl precursor can, for example, be selected from W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12.
摘要翻译：使用顺序流动沉积沉积具有良好表面形态的金属层的方法包括将处理室中的衬底交替地暴露于羰基金属前体气体和还原气体。在用羰基金属前驱体气体曝光的同时，在基板上沉积薄金属层，随后将金属层暴露于还原气体有助于从金属层除去反应副产物。可以重复金属羰基前体气体和还原气体暴露步骤，直到达到具有所需厚度的金属层。金属羰基前体可以例如选自W（CO）6，Ni（CO）4，Mo（CO）6，Co2（CO）8，Rh4（CO）12，Re2（CO）（CO）6和Ru 3（CO）12。

3. 发明申请

US20050069632A1 Method of forming a metal layer using an intermittent precursor gas flow process 有权
公开(公告)号：US20050069632A1
公开(公告)日：2005-03-31
申请号：US10673646
申请日：2003-09-30
申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Mitsuhiro Tachibana , Koumei Matsuzava , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
发明人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Mitsuhiro Tachibana , Koumei Matsuzava , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
IPC分类号： C23C16/04 , C23C16/16 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/768 , B05D5/12 , H01L21/4763
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/16 , C23C16/4408 , H01L21/28556 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.

4. 发明申请

US20050079708A1 Method of depositing metal layers from metal-carbonyl precursors 有权
标题翻译：从金属羰基前体沉积金属层的方法
公开(公告)号：US20050079708A1
公开(公告)日：2005-04-14
申请号：US10673648
申请日：2003-09-30
申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
发明人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
IPC分类号： C23C16/16 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76841
摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process. The TCVD process utilizes high flow rate of a dilute process gas containing a metal-carbonyl precursor to deposit a metal layer. In one embodiment of the invention, the metal-carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12. In another embodiment of the invention, a method is provided for depositing a W layer from a process gas comprising a W(CO)6 precursor at a substrate temperature of about 410° C. and a chamber pressure of about 200 mTorr.
摘要翻译：一种通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积金属层的方法。 TCVD工艺利用含有羰基金属前体的稀释工艺气体的高流速来沉积金属层。在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，Mo（CO）6，Co 2（CO）8，Rh 4（CO）12， Re 2（CO）10，Cr（CO）6和Ru 3（CO）12）。在本发明的另一个实施方案中，提供了一种方法，用于在约410℃的基底温度和约200mTorr的室压下从包含W（CO）6前体的工艺气体中沉积W层。

5. 发明申请

US20050070100A1 Low-pressure deposition of metal layers from metal-carbonyl precursors 有权
标题翻译：金属 - 羰基前驱体金属层的低压沉积
公开(公告)号：US20050070100A1
公开(公告)日：2005-03-31
申请号：US10673908
申请日：2003-09-30
申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
发明人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
IPC分类号： C23C16/16 , C23C16/44 , H01L21/285 , H01L21/44
CPC分类号： C23C16/16 , H01L21/28556
摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500° C., by utilizing a residence time less than about 120 msec.
摘要翻译：通过热化学气相沉积（TCVD）方法在金属层上沉积金属层的方法包括在处理室中引入含有羰基金属前驱体的工艺气体并在基底上沉积金属层。 TCVD工艺利用在衬底上方的处理区域中的气态物质的短暂停留时间以形成低电阻率金属层。在本发明的一个实施方案中，金属羰基前体可以选自W（CO）6，Ni（CO）4，Mo（CO）6，Co 2（CO）8，Rh 4（CO）12，Re 2 （CO）10，Cr（CO）6和Ru 3（CO）12前体）。在本发明的另一个实施例中，提供了一种通过利用小于约120毫秒的停留时间在低于约500℃的衬底温度下沉积低电阻W层的方法。

6. 发明授权

US08026176B2 Film forming method, plasma film forming apparatus and storage medium 有权
标题翻译：成膜方法，等离子体成膜装置和存储介质
公开(公告)号：US08026176B2
公开(公告)日：2011-09-27
申请号：US12223781
申请日：2007-02-09
申请人： Takashi Sakuma , Taro Ikeda , Osamu Yokoyama , Tsukasa Matsuda , Tatsuo Hatano , Yasushi Mizusawa
发明人： Takashi Sakuma , Taro Ikeda , Osamu Yokoyama , Tsukasa Matsuda , Tatsuo Hatano , Yasushi Mizusawa
IPC分类号： H01L21/311
CPC分类号： C23C14/046 , H01J37/321 , H01J37/34 , H01L21/2855 , H01L21/76846 , H01L21/76877 , H01L21/76882 , H01L21/76883
摘要： A technique for embedding metal in a microscopic recess provided in the surface of a process object, such as a semiconductor wafer, by plasma sputtering. A film forming step and a diffusion step are alternately performed a plurality of times. The film forming step deposits a small amount of metal film in the recess. The diffusion step moves the deposited metal film towards the bottom portion of the recess. In the film forming step, bias power to be applied to a stage for supporting the wafer is set to a value ensuring that, on the surface of the wafer, the rate of metal deposition due to the drawing-in of metal particles is substantially equal to the rate of the sputter etching by plasma. In the diffusion step, the wafer is maintained at a temperature which permits occurrence of surface diffusion of the metal film deposited in the recess.
摘要翻译：通过等离子体溅射将金属嵌入设置在处理对象（例如半导体晶片）的表面中的微观凹槽中的技术。交替进行成膜步骤和扩散步骤。成膜步骤在凹槽中沉积少量的金属膜。扩散步骤将沉积的金属膜移向凹部的底部。在成膜步骤中，施加到用于支撑晶片的载物台的偏置功率被设定为确保在晶片的表面上由于金属颗粒的吸入引起的金属沉积速率基本相等的值到等离子体的溅射蚀刻速率。在扩散步骤中，晶片保持在允许沉积在凹槽中的金属膜的表面扩散出现的温度。

7. 发明申请

US20100167540A1 Film Forming Method, Plasma Film Forming Apparatus and Storage Medium 有权
标题翻译：成膜方法，等离子体成膜装置和储存介质
公开(公告)号：US20100167540A1
公开(公告)日：2010-07-01
申请号：US12223781
申请日：2007-02-09
申请人： Takashi Sakuma , Taro Ikeda , Osamu Yokoyama , Tsukasa Matsuda , Tatsuo Hatano , Yasushi Mizusawa
发明人： Takashi Sakuma , Taro Ikeda , Osamu Yokoyama , Tsukasa Matsuda , Tatsuo Hatano , Yasushi Mizusawa
IPC分类号： H01L21/768 , C23C14/34
CPC分类号： C23C14/046 , H01J37/321 , H01J37/34 , H01L21/2855 , H01L21/76846 , H01L21/76877 , H01L21/76882 , H01L21/76883
摘要： Disclosed is a technique for embedding metal in a recess provided in the surface of a process object, such as a semiconductor wafer W, only by plasma sputtering. The metal is copper as a typical example. The recess has a microscopic hole or trench having a diameter or width of 100 nm or less as a typical example. A film forming step and a diffusion step are alternately performed a plurality of times. The film forming step deposits a small amount of a metal film in the recess. The diffusion step moves the deposited metal film toward the bottom portion of the recess. In the film forming step, bias power to be applied to a stage for supporting the wafer W is set to a value ensuring that, on the surface of the wafer W, the rate of metal deposition due to the drawing-in of metal particles is substantially equal to the rate of the sputter etching by plasma. In the diffusion step, the wafer W is maintained at a temperature which permits occurrence of surface diffusion of the metal film deposited in the recess.
摘要翻译：公开了一种仅通过等离子体溅射将金属嵌入设置在诸如半导体晶片W的处理对象表面的凹部中的技术。金属是铜，作为典型的例子。该凹部具有作为典型实例的直径或宽度为100nm或更小的微孔或沟槽。交替进行成膜步骤和扩散步骤。成膜步骤在凹槽中沉积少量的金属膜。扩散步骤将沉积的金属膜移向凹部的底部。在成膜步骤中，施加到用于支撑晶片W的载物台的偏置功率被设定为确保在晶片W的表面上由金属颗粒的吸入引起的金属沉积速率为基本上等于通过等离子体的溅射蚀刻的速率。在扩散步骤中，晶片W保持在允许沉积在凹槽中的金属膜的表面扩散出现的温度。

8. 发明申请

US20090183984A1 Seed Film Forming Method, Plasma-Assisted Film Forming System and Storage Medium 审中-公开
标题翻译：种子成膜方法，等离子体辅助成膜系统和储存介质
公开(公告)号：US20090183984A1
公开(公告)日：2009-07-23
申请号：US12223383
申请日：2007-01-26
申请人： Takashi Sakuma , Taro Ikeda , Osamu Yokoyama , Tsukasa Matsuda , Tatsuo Hatano , Yasushi Mizusawa
发明人： Takashi Sakuma , Taro Ikeda , Osamu Yokoyama , Tsukasa Matsuda , Tatsuo Hatano , Yasushi Mizusawa
IPC分类号： C23C14/34 , C23C14/14
CPC分类号： C23C14/046 , C23C14/345 , H01J37/321 , H01J37/32935 , H01J37/3299 , H01J37/34 , H01L21/2855 , H01L21/76843 , H01L21/76862 , H01L21/76873 , H01L2221/1089
摘要： The invention is related to A seed film forming method capable of forming a seed film in recesses without forming overhangs.The seed film forming method of depositing a seed film for plating includes the steps of: producing metal ions by ionizing a metal target with a plasma in a processing vessel that can be evacuated; and depositing a metal film on a surface provided with recesses of a workpiece mounted on a stage placed in the processing vessel by supplying bias power to the workpiece to attract the metal ions to the workpiece; wherein a film deposition step of depositing the metal film by using the bias power determined so that the metal film deposited on the surface of the workpiece may not be sputtered, and a film deposition interrupting step of interrupting the deposition of the metal film by stopping producing the metal ions are repeated alternately by a number of cycles.
摘要翻译：本发明涉及能够在不形成突出端的情况下在凹陷中形成种子膜的种子膜形成方法。沉积用于电镀的种子膜的种子膜形成方法包括以下步骤：通过在能够被抽真空的处理容器中用等离子体电离金属靶产生金属离子; 以及通过向所述工件提供偏置功率以将金属离子吸引到所述工件上，在安装在放置在所述处理容器中的工作台上的工件的设置有凹部的表面上沉积金属膜; 其中，通过使用确定为使得沉积在所述工件的表面上的金属膜不会被溅射的偏置功率来沉积所述金属膜的膜沉积步骤，以及通过停止产生来中断所述金属膜的沉积的膜沉积中断步骤金属离子交替重复多次。

9. 发明授权

US07063871B2 CVD process capable of reducing incubation time 失效
标题翻译： CVD工艺能够减少孵化时间
公开(公告)号：US07063871B2
公开(公告)日：2006-06-20
申请号：US10617819
申请日：2003-07-14
申请人： Hideaki Yamasaki , Tatsuo Hatano , Tsukasa Matsuda , Taro Ikeda , Kazuhito Nakamura , Koumei Matsuzawa , Yumiko Kawano , Mitsuhiro Tachibana
发明人： Hideaki Yamasaki , Tatsuo Hatano , Tsukasa Matsuda , Taro Ikeda , Kazuhito Nakamura , Koumei Matsuzawa , Yumiko Kawano , Mitsuhiro Tachibana
IPC分类号： C23C16/16
CPC分类号： C23C16/16
摘要： A metal CVD process includes a step (A) of introducing a gaseous source material containing a metal carbonyl compound into a process space adjacent to a surface of a substrate to be processed in such a manner that the metal carbonyl compound has a first partial pressure, and a step (B) of depositing a metal film on the surface of the substrate by introducing a gaseous source material containing the metal carbonyl compound into the process space in such a mater that the metal carbonyl compound has a second, smaller partial pressure. The step (A) is conducted such that there is caused no substantial deposition of the metal film on the substrate.
摘要翻译：金属CVD法包括将含有羰基金属化合物的气态源材料以与金属羰基化合物具有第一分压的方式相连接的待处理基板的表面的工艺空间引入的工序（A）以及在金属羰基化合物具有第二较小分压的情况下，通过将含有羰基金属化合物的气态源材料引入到工艺空间中，在基板的表面上沉积金属膜的工序（B）。进行步骤（A），使得金属膜不会在基板上实质上沉积。

10. 发明授权

US08486845B2 Plasma enhanced atomic layer deposition system and method 有权
标题翻译：等离子体增强原子层沉积系统和方法
公开(公告)号：US08486845B2
公开(公告)日：2013-07-16
申请号：US11084024
申请日：2005-03-21
申请人： Tsukasa Matsuda
发明人： Tsukasa Matsuda
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/45544 , C23C16/4554 , C23C16/515 , H01J37/32009 , H01J37/32532 , H01L21/28562
摘要： A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process chamber and introducing a second process material within the process chamber. Also included is coupling electromagnetic power to the process chamber during introduction of the second process material in order to generate a plasma that facilitates a reduction reaction between the first and second process materials at a surface of the substrate. A reactive gas is introduced within the process chamber, the reactive gas chemically reacting with contaminants in the process chamber to release the contaminants from at least one of a process chamber component or the substrate.
摘要翻译：使用等离子体增强原子层沉积（PEALD）工艺在衬底上沉积膜的方法包括将衬底布置在处理室中，该处理室被配置为便于PEALD工艺，在处理室内引入第一工艺材料并引入第二工艺材料在处理室内。还包括在引入第二工艺材料期间将电磁功率耦合到处理室，以便产生促进第一和第二工艺材料在衬底表面处的还原反应的等离子体。反应性气体被引入处理室内，反应气体与处理室中的污染物质化学反应以从处理室组件或衬底中的至少一个释放污染物。

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