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1. 发明授权

US07230649B2 Image sensor system using CMOS image sensor and image sensor apparatus using CMOS image sensor 失效
标题翻译：使用CMOS图像传感器的图像传感器系统和使用CMOS图像传感器的图像传感器设备
公开(公告)号：US07230649B2
公开(公告)日：2007-06-12
申请号：US10291531
申请日：2002-11-12
申请人： Takashi Takahashi , Hiroyuki Matsumoto , Teruyuki Odaka , Masashi Nakamura , Koji Shida
发明人： Takashi Takahashi , Hiroyuki Matsumoto , Teruyuki Odaka , Masashi Nakamura , Koji Shida
IPC分类号： H04N5/225 , H04N3/14 , H04N5/335 , G06F1/00
CPC分类号： H04N5/23241 , H04N5/335
摘要： An image sensor such as the conventional CMOS image sensor, in which automatic controls including so-called automatic iris control and white balance adjustment for adjusting the sensor sensitivity, namely the charge accumulation time in each pixel, according to the brightness of the image sensing ambience are performed, involves the problem that, when the frame rate of the image sensor is slowed to save power consumption, the operation of the automatic control systems will also become slower and the image quality deteriorates. In the invented image sensor system using a CMOS image sensor, while a CMOS image sensor is operated at the full frame rate all the time, a circuit for processing image signals from the CMOS image sensor is operated at a speed close to that of full frame processing only when the power supply is turned on or when the image sensing ambience varies and switched to a lower frame processing speed when automatic controls, including iris control, have become stabilized.
摘要翻译：诸如常规CMOS图像传感器的图像传感器，其中包括所谓的自动光圈控制和用于调节传感器灵敏度的白平衡调整的自动控制，即每个像素中的电荷累积时间，根据图像感测环境的亮度涉及如下问题：当图像传感器的帧速率减慢以节省功耗时，自动控制系统的操作也将变慢并且图像质量恶化。在使用CMOS图像传感器的本发明的图像传感器系统中，一直以全帧速率操作CMOS图像传感器，用于处理来自CMOS图像传感器的图像信号的电路以接近全帧的速度运行只有当电源打开时或当图像感测环境变化并且当包括光圈控制的自动控制已经变得稳定时，才将其切换到较低的帧处理速度。

2. 发明授权

US07209169B2 Imaging system using solid-state CMOS imaging device 失效
标题翻译：成像系统采用固态CMOS成像装置
公开(公告)号：US07209169B2
公开(公告)日：2007-04-24
申请号：US10084466
申请日：2002-02-28
申请人： Hiroyuki Matsumoto , Takashi Takahashi , Teruaki Odaka , Masashi Nakamura , Koji Shida
发明人： Hiroyuki Matsumoto , Takashi Takahashi , Teruaki Odaka , Masashi Nakamura , Koji Shida
IPC分类号： H04N3/14 , H04N9/73
CPC分类号： H04N5/2357 , H04N5/235 , H04N5/2351 , H04N5/2353 , H04N5/243
摘要： Turning on and off of the light source illuminating an object to be imaged is judged based on brightness changes in small and large areas set up in the frame and an electric charge storage time for each pixel is set up to be equal to the turning-on-and-off period of the light source or an integral multiple thereof. The charge storage time is changed over responsive to the turning-on-and-off period of the light source or the integral multiple thereof to set up a stored light amount for each pixel stepwise and difference in the stored light amount between steps is interpolated by continuous gain control of read-out signals of pixels.
摘要翻译：基于在帧中设置的小的和大的区域中的亮度变化来判断照射要成像的对象的光源的导通和关闭，并且每个像素的电荷存储时间被设置为等于接通光源的关闭周期或其整数倍。电荷存储时间响应于光源的接通和关闭周期或其整数倍而改变，以逐步建立每个像素的存储光量，并且步骤之间存储的光量的差异被内插对像素的读出信号进行连续增益控制。

3. 发明授权

US07968362B2 Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system 有权
标题翻译：半导体发光器件，表面发射激光二极管及其制造装置，制造方法，光模块和光通信系统
公开(公告)号：US07968362B2
公开(公告)日：2011-06-28
申请号：US12408362
申请日：2009-03-20
申请人： Takashi Takahashi , Morimasa Kaminishi , Shunichi Sato , Akihiro Itoh , Naoto Jikutani
发明人： Takashi Takahashi , Morimasa Kaminishi , Shunichi Sato , Akihiro Itoh , Naoto Jikutani
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , B82Y20/00 , C23C16/301 , C23C16/54 , C30B25/02 , C30B29/40 , H01L21/02395 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L33/025 , H01L33/10 , H01L33/32 , H01S5/0014 , H01S5/02284 , H01S5/18305 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18394 , H01S5/3211 , H01S5/32366 , H01S5/343 , H01S5/34306 , H01S5/34333 , H01S2304/04
摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
摘要翻译：半导体发光器件具有在衬底和含有氮的有源层之间包含Al的半导体层，其中在生长所述有源层之前从生长室中除去Al和氧，并且与Al一起掺入所述有源层中的氧浓度被设定为使得所述半导体发光装置能够在室温下进行连续激光振荡的电平。

4. 发明授权

US07881357B2 Vertical cavity surface-emitting semiconductor laser device, optical transmission module, optical transmission device, and optical switching method 有权
标题翻译：垂直腔表面发射半导体激光器件，光传输模块，光传输器件和光开关方法
公开(公告)号：US07881357B2
公开(公告)日：2011-02-01
申请号：US12153152
申请日：2008-05-14
申请人： Takashi Takahashi
发明人： Takashi Takahashi
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/0425 , H01S5/06226 , H01S5/1021 , H01S5/18302 , H01S5/18308 , H01S5/1833 , H01S5/18358 , H01S5/2063 , H01S5/34306 , H01S5/3432
摘要： In a vertical cavity surface-emitting semiconductor laser device, first and second resonance wavelengths which are different are provided while a first resonator and a second resonator are coupled optically, and a gain of an active layer at the first resonance wavelength on the side of short wavelength is higher than that at the second resonance wavelength on the side of long wavelength. An absorption coefficient of an optical absorption layer when no electric field is applied is small for the first and second resonance wavelengths, and when an electric field is applied, an absorption coefficient of the optical absorption layer for the first resonance wavelength on the side of short wavelength is larger than that for the second resonance wavelength on the side of long wavelength.
摘要翻译：在垂直腔表面发射半导体激光器件中，在第一谐振器和第二谐振器被光耦合的同时提供不同的第一和第二谐振波长，并且在短边的第一谐振波长处的有源层的增益波长比在长波长侧的第二共振波长处高。当不施加电场时光吸收层的吸收系数对于第一和第二共振波长小，并且当施加电场时，第一共振波长的光吸收层的吸收系数在短边波长比在长波长侧的第二共振波长的波长大。

5. 发明申请

US20100195691A1 LASER DIODE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE PRODUCING VISIBLE-WAVELENGTH RADIATION 有权
标题翻译：产生可见波长辐射的激光二极管和半导体发光器件
公开(公告)号：US20100195691A1
公开(公告)日：2010-08-05
申请号：US12696322
申请日：2010-01-29
申请人： Naoto Jikutani , Takashi Takahashi , Shunichi Sato
发明人： Naoto Jikutani , Takashi Takahashi , Shunichi Sato
IPC分类号： H01S5/187
CPC分类号： H01S5/2202 , B82Y20/00 , H01S5/22 , H01S5/2206 , H01S5/2209 , H01S5/221 , H01S5/2231 , H01S5/3201 , H01S5/3434
摘要： A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.
摘要翻译：激光二极管包括具有GaAs晶格常数或GaAs和GaP之间的基板，在基板上形成的AlGaInP的第一包层，形成在第一包层上的GaInAsP的有源层，形成在第一包层上的GaInP的蚀刻停止层有源层，在蚀刻阻挡层上形成一对AlGaInP的电流阻挡区域，以便限定它们之间的条带区域，形成在一对电流阻挡区域上以覆盖蚀刻阻挡层的AlGaInP光波导层以及形成在光波导层上的AlGaInP的第二包覆层，其中，所述电流阻挡区域的Al含量基本上与第二包层的Al含量相同。

6. 发明申请

US20100048901A1 NOVEL CURCUMIN DERIVATIVE 有权
标题翻译：新的CURCUMIN DERIVATIVE
公开(公告)号：US20100048901A1
公开(公告)日：2010-02-25
申请号：US12516948
申请日：2007-11-30
申请人： Takashi Takahashi , Ichiro Hijikuro , Hachiro Sugimoto , Takeshi Kihara , Yoshiari Shimmyo , Tetsuhiro Niidome
发明人： Takashi Takahashi , Ichiro Hijikuro , Hachiro Sugimoto , Takeshi Kihara , Yoshiari Shimmyo , Tetsuhiro Niidome
IPC分类号： C07C49/203 , C07D211/82 , C07D241/40
CPC分类号： C07D209/08 , A61K31/404 , C07D209/12
摘要： The present invention provides a novel compound that is structurally similar to curcumin and has a suppressive effect on Aβ aggregation, a degradative effect on Aβ aggregates, an inhibitory effect on β-secretase, and a protective effect on neurons. The novel compound is a compound represented by the following general formula (Ia) or a salt thereof: wherein R1 represents a 4-hydroxy-3-methoxyphenyl group or the like, and R2 represents a 1H-indol-6-yl group or the like.
摘要翻译：本发明提供了结构上类似于姜黄素并对A＆Bgr具有抑制作用的新型化合物; 聚集，对A＆Bgr的降解作用; 聚集体，对分泌酶的抑制作用，以及对神经元的保护作用。新化合物是由下列通式（Ia）表示的化合物或其盐：其中R1表示4-羟基-3-甲氧基苯基等，R2表示1H-吲哚-6-基或喜欢。

7. 发明授权

US07610355B2 Transferring web contents 失效
标题翻译：传送网页内容
公开(公告)号：US07610355B2
公开(公告)日：2009-10-27
申请号：US11832681
申请日：2007-08-02
申请人： Shigeo Azuma , Takashi Takahashi , Toshifumi Takahashi
发明人： Shigeo Azuma , Takashi Takahashi , Toshifumi Takahashi
IPC分类号： G06F15/16
CPC分类号： H04L67/06 , H04L67/02
摘要： To transfer web contents to a web server from a computer through a network, a plurality of files composing the web contents are stored in the computer. A processor of the computer then detects files to be transferred from the plurality of files to create a transfer file list table. A transfer priority of the files to be transferred is determined by the processor on the basis of reference relation data of the files to be transferred which are designated in the transfer file list table and file format data of the plurality of files to create a transfer priority list table for the files to be transferred. The files to be transferred are transferred to the web server from a communication controller of the computer through the network by the processor in order of the transfer priority set in the transfer priority list table.
摘要翻译：为了通过网络从计算机将web内容传送到web服务器，组成Web内容的多个文件被存储在计算机中。然后，计算机的处理器检测要从多个文件传送的文件以创建传送文件列表表。要传送的文件的传送优先级由处理器根据在传送文件列表表中指定的要传送的文件的参考关系数据和多个文件的文件格式数据来确定，以创建传送优先级列表要传输的文件。要传送的文件按照传输优先级列表表中设置的传送优先级的顺序，由处理器从计算机的通信控制器通过网络传输到Web服务器。

8. 发明申请

US20070242354A1 Optical head device with film wavelength plate incorporated therein 审中-公开
标题翻译：配有膜波长板的光头装置
公开(公告)号：US20070242354A1
公开(公告)日：2007-10-18
申请号：US11714913
申请日：2007-03-07
申请人： Takashi Takahashi , Nobuki Tanaka , Takaaki Saito , Tatsuya Nakata
发明人： Takashi Takahashi , Nobuki Tanaka , Takaaki Saito , Tatsuya Nakata
IPC分类号： G02B27/28
CPC分类号： G11B7/13922 , G11B7/1365
摘要： Members such as a laser diode (10) that is a light source, a diffraction grating (11), a polarizing beam splitter (12) and a collimator lens are arranged in a casing (20). An optical head device having such a casing (20) is improved, so that a film wavelength plate (14) is directly attached to the casing (20) in a form free from a support substrate. The film wavelength plate (14) consists of only one film and has a thickness of 0.2 to 1.0 mm. Particularly, the film wavelength plate is preferably constituted by fusing polycarbonate films in a three-layer structure.
摘要翻译：诸如作为光源的激光二极管（10），衍射光栅（11），偏振分束器（12）和准直透镜的构件被布置在壳体（20）中。具有这种壳体（20）的光学头装置被改进，使得膜波长板（14）以没有支撑基板的形式直接附接到壳体（20）。膜波长板（14）仅由一个膜构成，厚度为0.2至1.0mm。特别地，膜波长板优选通过将聚碳酸酯膜熔合成三层结构而构成。

9. 发明申请

US20070221908A1 Semiconductor light emitter 有权
公开(公告)号：US20070221908A1
公开(公告)日：2007-09-27
申请号：US11802391
申请日：2007-05-22
申请人： Takashi Takahashi , Shunichi Sato , Morimasa Kaminishi
发明人： Takashi Takahashi , Shunichi Sato , Morimasa Kaminishi
IPC分类号： H01L29/06
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01L33/105 , H01S5/18311 , H01S5/18358 , H01S5/22 , H01S5/3215 , H01S5/32366 , H01S5/3406 , H01S5/34306 , H01S5/34346 , H01S5/423 , H01S2304/04
摘要： A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier layers together constitute an active layer, wherein the barrier layers are formed of a Group-III-V mixed-crystal semiconductor that includes nitrogen and at least one other Group-V element, a nitrogen composition thereof being smaller than that of the quantum well active layer.

10. 发明授权

US07260137B2 Vertical-cavity surface-emission type laser diode and fabrication process thereof 有权
标题翻译：垂直腔表面发射型激光二极管及其制造工艺
公开(公告)号：US07260137B2
公开(公告)日：2007-08-21
申请号：US11338220
申请日：2006-01-23
申请人： Shunichi Sato , Takashi Takahashi , Naoto Jikutani , Morimasa Kaminishi , Akihiro Itoh
发明人： Shunichi Sato , Takashi Takahashi , Naoto Jikutani , Morimasa Kaminishi , Akihiro Itoh
IPC分类号： H01S5/183
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/18308 , H01S5/3072 , H01S5/3201 , H01S5/3211 , H01S5/3218 , H01S5/3219 , H01S5/32366 , H01S5/3403 , H01S5/34306 , H01S5/34313 , H01S5/34386 , H01S5/423
摘要： A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.
摘要翻译：垂直腔表面发射型激光二极管包括由上反射器和下反射器夹持的有源区形成的光腔，其中下反射器由分布式布拉格反射器形成，并且非光学重组消除层设置在有源区中的有源层和下反射器。

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