会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Magnetic memory array with magnetic tunnel junction memory cells having
flux-closed free layers
    • 磁存储器阵列,具有具有通量封闭自由层的磁性隧道结存储器单元
    • US6166948A
    • 2000-12-26
    • US390596
    • 1999-09-03
    • Stuart Stephen Papworth ParkinLuc Thomas
    • Stuart Stephen Papworth ParkinLuc Thomas
    • G11C11/16H01F10/32G11C11/14
    • B82Y25/00G11C11/16H01F10/3254H01F10/3268H01F10/3272
    • An improved magnetic tunnel junction (MTJ) memory cell for use in a nonvolatile magnetic random access memory (MRAM) array has a free layer formed as two ferromagnetic films that are magnetostatically coupled antiparallel to one another by their respective dipole fields. The magnetostatic or dipolar coupling of the two ferromagnetic films occurs across a nonferromagnetic spacer layer that is selected to prevent exchange coupling between the two ferromagnetic films. The magnetic moments of the two ferromagnetic films are antiparallel to another so that the multilayer free layer structure has a reduced net magnetic moment. In the presence of an applied magnetic field, such as during writing to the cell, the moments of the two ferromagnetic films switch directions substantially simultaneously, so that the net magnetic moment of the multilayer free layer structure can have two possible orientations relative to the orientation of the fixed or pinned layer of the MTJ cell, thus resulting in the two stable magnetic states of the MTJ cell. The reduced net magnetic moment of the multilayer free layer structure reduces the magnetostatic coupling between the multilayer free layer and the pinned ferromagnetic layer in the MTJ cell, as well as the magnetostatic coupling between adjacent MTJ cells in the array. As a result, the cells, and thus the MRAM array, can be made smaller.
    • 用于非易失性磁随机存取存储器(MRAM)阵列的改进的磁隧道结(MTJ)存储单元具有形成为两个铁磁膜的自由层,它们通过它们各自的偶极场彼此反平行地静磁耦合。 两个铁磁膜的静磁或偶极耦合发生在非铁磁间隔层上,该非铁磁间隔层被选择以防止两个铁磁膜之间的交换耦合。 两个铁磁膜的磁矩反向平行于另一个,使得多层自由层结构具有减小的净磁矩。 在存在施加的磁场的情况下,例如在写入电池期间,两个铁磁膜的力矩基本上同时切换方向,使得多层自由层结构的净磁矩可以相对于取向具有两个可能的取向 的MTJ电池的固定或固定层,从而导致MTJ电池的两个稳定的磁状态。 多层自由层结构的减小的净磁矩降低了MTJ单元中多层自由层和钉扎铁磁层之间的静磁耦合,以及阵列中相邻MTJ单元之间的静磁耦合。 结果,可以使电池,从而使MRAM阵列更小。
    • 5. 发明申请
    • SEQUENCE OF CURRENT PULSES FOR DEPINNING MAGNETIC DOMAIN WALLS
    • 电流脉冲序列用于分离磁场
    • US20080253161A1
    • 2008-10-16
    • US11622644
    • 2007-01-12
    • Stuart ParkinLuc Thomas
    • Stuart ParkinLuc Thomas
    • G11C19/00
    • G11C11/14G11C19/0808G11C19/0841Y10S977/933
    • A method and structure for depinning a domain wall that is in spatial confinement by a pinning potential to within a local region of a magnetic device. At least one current pulse applied to the domain has a pulse length sufficiently close to a precession period of the domain wall motion and the current pulses are separated by a pulse interval sufficiently close to the precession period such that: the at least one current pulse causes a depinning of the domain wall such that the domain wall escapes the spatial confinement; and each current pulse has an amplitude less than the minimum amplitude of a direct current that would cause the depinning if the direct current were applied to the domain wall instead of the at least one current pulse. The pulse length and pulse interval may be in a range of 25% to 75% of the precession period.
    • 一种通过钉扎电位在磁性器件的局部区域内处于空间限制的畴壁的方法和结构。 施加到域的至少一个电流脉冲具有足够接近畴壁运动的进动周期的脉冲长度,并且电流脉冲被充分接近进动周期的脉冲间隔分开,使得至少一个电流脉冲导致 域壁的拆卸使得畴壁逃避空间限制; 并且每个电流脉冲具有小于直流电流的最小幅度的幅度,如果直流电被施加到畴壁而不是至少一个电流脉冲,则该直流电流将导致汲取。 脉冲长度和脉冲间隔可以在进动周期的25%至75%的范围内。
    • 6. 发明授权
    • Sequence of current pulses for depinning magnetic domain walls
    • 排除磁畴壁的电流脉冲序列
    • US07492622B2
    • 2009-02-17
    • US11622644
    • 2007-01-12
    • Stuart ParkinLuc Thomas
    • Stuart ParkinLuc Thomas
    • G11C7/00G11C19/00
    • G11C11/14G11C19/0808G11C19/0841Y10S977/933
    • A method and structure for depinning a domain wall that is in spatial confinement by a pinning potential to within a local region of a magnetic device. At least one current pulse applied to the domain has a pulse length sufficiently close to a precession period of the domain wall motion and the current pulses are separated by a pulse interval sufficiently close to the precession period such that: the at least one current pulse causes a depinning of the domain wall such that the domain wall escapes the spatial confinement; and each current pulse has an amplitude less than the minimum amplitude of a direct current that would cause the depinning if the direct current were applied to the domain wall instead of the at least one current pulse. The pulse length and pulse interval may be in a range of 25% to 75% of the precession period.
    • 一种通过钉扎电位在磁性器件的局部区域内处于空间限制的畴壁的方法和结构。 施加到域的至少一个电流脉冲具有足够接近畴壁运动的进动周期的脉冲长度,并且电流脉冲被充分接近进动周期的脉冲间隔分开,使得至少一个电流脉冲导致 域壁的拆卸使得畴壁逃避空间限制; 并且每个电流脉冲具有小于直流电流的最小幅度的幅度,如果直流电被施加到畴壁而不是至少一个电流脉冲,则该直流电流将导致汲取。 脉冲长度和脉冲间隔可以在进动周期的25%至75%的范围内。
    • 7. 发明授权
    • Digital generator for producing a sinewave
    • 用于生产正弦波的数字发生器
    • US4285044A
    • 1981-08-18
    • US56668
    • 1979-07-11
    • Luc ThomasClaude Cardot
    • Luc ThomasClaude Cardot
    • G06F1/02
    • G06F1/022G06F2101/04
    • A digital sinewave generator can be used in digital equipment, e.g. instead of a local oscillator for modulation/demodulation of signals. If there is no simple relationship between sampling rate and the frequency of the sinewave, successive sample values must be calculated since storage of these values would be prohibitive. For a sinewave Re.sup.jk.phi. sampled at successive instants k=0, 1, 2, . . . etc. separated by a phase angle .phi., quadrature components A.sub.k +jB.sub.k =Re.sup.jk.phi. can be calculated using the algorithm:A.sub.k+1 =cos.phi.A.sub.k -sin.phi.B.sub.kB.sub.k+1 =sin.phi.A.sub.k +cos.phi.B.sub.k.Unfortunately it is impossible for cos.sup.2 .phi.+sin.sup.2 .phi. to be exactly equal to unity if calculations are performed with finite precision using an even number base, which as the effect of causing the modulus of a sinewave generated by this algorithm to tend exponentially to 0 to .infin.. The present invention overcomes this by using the above algorithm to obtain approximations A.sub.k+1 ' and B.sub.k+1 ' to the desired result at terminals (9 and 10) and then multiplying (22,23) the approximations A.sub.k+1 ' and B.sub.k+1 ' by a correction factor ( 1-1/2.epsilon.) to obtain better approximations A.sub.k+1 and B.sub.k+1 which are stable about the desired amplitude R. ##EQU1## Such a generator can be used as a local oscillator in a modem for example.
    • 数字正弦波发生器可用于数字设备,例如 而不是用于调制/解调信号的本地振荡器。 如果采样率和正弦波的频率之间没有简单的关系,则必须计算连续的采样值,因为这些值的存储将被禁止。 对于在连续时刻k = 0,1,2,采样的正弦波Rejk phi。 。 。 通过相位角phi分离,可以使用以下算法计算正交分量Ak + jBk = Rejk phi:Ak + 1 = cos phi Ak-sin phi Bk Bk + 1 = sin phi Ak + cos phi Bk。 不幸的是,如果使用偶数基数以有限的精度执行计算,则cos2 phi + sin2 phi不可能完全等于1,这是因为使由该算法产生的正弦波的模数指数地趋于0到 无穷 。 本发明通过使用上述算法来克服这一点,以在端子(9和10)处获得对于期望结果的近似值Ak ​​+ 1'和Bk + 1',然后乘以(22,23)近似值Ak ​​+ 1'和Bk + 1“通过校正因子(1-1 /2ε)获得更好的近似值Ak ​​+ 1和Bk + 1,其对于期望的幅度R是稳定的。这种发生器可以用作调制解调器中的本地振荡器 例如。
    • 9. 发明申请
    • SEQUENCE OF CURRENT PULSES FOR DEPINNING MAGNETIC DOMAIN WALLS
    • 电流脉冲序列用于分离磁场
    • US20090103347A1
    • 2009-04-23
    • US12124306
    • 2008-05-21
    • Stuart ParkinLuc Thomas
    • Stuart ParkinLuc Thomas
    • G11C19/00
    • G11C11/14G11C19/0808G11C19/0841Y10S977/933
    • A method and structure for depinning a domain wall that is in spatial confinement by a pinning potential to within a local region of a magnetic device. At least one current pulse applied to the domain has a pulse length sufficiently close to a precession period of the domain wall motion and the current pulses are separated by a pulse interval sufficiently close to the precession period such that: the at least one current pulse causes a depinning of the domain wall such that the domain wall escapes the spatial confinement; and each current pulse has an amplitude less than the minimum amplitude of a direct current that would cause the depinning if the direct current were applied to the domain wall instead of the at least one current pulse. The pulse length and pulse interval may be in a range of 25% to 75% of the precession period.
    • 一种通过钉扎电位在磁性器件的局部区域内处于空间限制的畴壁的方法和结构。 施加到域的至少一个电流脉冲具有足够接近畴壁运动的进动周期的脉冲长度,并且电流脉冲被充分接近进动周期的脉冲间隔分开,使得至少一个电流脉冲导致 域壁的拆卸使得畴壁逃避空间限制; 并且每个电流脉冲具有小于直流电流的最小幅度的幅度,如果直流电被施加到畴壁而不是至少一个电流脉冲,则该直流电流将导致汲取。 脉冲长度和脉冲间隔可以在进动周期的25%至75%的范围内。
    • 10. 发明授权
    • Sequence of current pulses for depinning magnetic domain walls
    • 排除磁畴壁的电流脉冲序列
    • US07760535B2
    • 2010-07-20
    • US12124306
    • 2008-05-21
    • Stuart ParkinLuc Thomas
    • Stuart ParkinLuc Thomas
    • G11C19/00
    • G11C11/14G11C19/0808G11C19/0841Y10S977/933
    • A method and structure for depinning a domain wall that is in spatial confinement by a pinning potential to within a local region of a magnetic device. At least one current pulse applied to the domain has a pulse length sufficiently close to a precession period of the domain wall motion and the current pulses are separated by a pulse interval sufficiently close to the precession period such that: the at least one current pulse causes a depinning of the domain wall such that the domain wall escapes the spatial confinement; and each current pulse has an amplitude less than the minimum amplitude of a direct current that would cause the depinning if the direct current were applied to the domain wall instead of the at least one current pulse. The pulse length and pulse interval may be in a range of 25% to 75% of the precession period.
    • 一种通过钉扎电位在磁性器件的局部区域内处于空间限制的畴壁的方法和结构。 施加到域的至少一个电流脉冲具有足够接近畴壁运动的进动周期的脉冲长度,并且电流脉冲被充分接近进动周期的脉冲间隔分开,使得至少一个电流脉冲导致 域壁的拆卸使得畴壁逃避空间限制; 并且每个电流脉冲具有小于直流电流的最小幅度的幅度,如果直流电被施加到畴壁而不是至少一个电流脉冲,则该直流电流将导致汲取。 脉冲长度和脉冲间隔可以在进动周期的25%至75%的范围内。