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1. 发明申请

US20060290021A1 Micro-embossing fabrication of electronic devices 有权
标题翻译：电子器件的微压花加工
公开(公告)号：US20060290021A1
公开(公告)日：2006-12-28
申请号：US11453974
申请日：2006-06-16
申请人： Shunpu Li , Christopher Newsome , David Russell , Thomas Kugler
发明人： Shunpu Li , Christopher Newsome , David Russell , Thomas Kugler
IPC分类号： B29C47/00 , B32B23/08
CPC分类号： H01L51/0541 , H01L51/0022 , H01L51/0035 , H01L51/0036 , H01L51/052 , H01L51/105 , H01L2251/105
摘要： A method of forming an electronic device on a substrate 10, comprising: embossing the substrate 10, surface treating the substrate so that unindented portions 11 repel a solution of a first material 60, and depositing a solution of the first material 60 in indentations 12 on the substrate 10 formed by the embossing. The substrate is then annealed so that level of the first material is the same as the surface of the substrate. The first material 60 in the indentations can then, for example, be used as the source and drain in the subsequent formation of a TFT.
摘要翻译：一种在基板10上形成电子器件的方法，包括：对基片10进行压花处理，对基片进行表面处理，使得未凹陷部分11排斥第一材料60的溶液，并将第一材料60的溶液沉积在压痕12中通过压花形成的基板10。然后将衬底退火，使得第一材料的水平与衬底的表面相同。然后，凹陷中的第一材料60可以例如在随后的TFT形成中被用作源极和漏极。

2. 发明申请

US20060128076A1 Self-aligning patterning method 失效
标题翻译：自对准图案化方法
公开(公告)号：US20060128076A1
公开(公告)日：2006-06-15
申请号：US11253756
申请日：2005-10-20
申请人： Shunpu Li , Thomas Kugler , Christopher Newsome , David Russell
发明人： Shunpu Li , Thomas Kugler , Christopher Newsome , David Russell
IPC分类号： H01L21/461
CPC分类号： H01L51/105 , H01L21/823456 , H01L27/1292 , H01L27/285 , H01L51/0037 , H01L51/0516 , H01L51/0545
摘要： The present invention relates to a self-aligning patterning method which can be used to manufacture a plurality of multi-layer thin film transistors on a substrate. The method comprises firstly forming a patterned mask 20 on the surface of a sacrificial layer 18 which is part of a multi-layer structure 10 which comprises the substrate 12, a conductive layer 14, an insulating layer 16 and the sacrificial layer 18. Unpatterned areas are then etched to remove the corresponding areas of the sacrificial layer, the insulating layer 16 and the conductive layer 14 thereby leaving voids. A layer of dielectric 22 is then deposited over the etched multi-layer structure to at least substantially fill the voids. The deposited dielectric is then etched in order to at least partially expose the sides of the remaining areas 28 of the sacrificial layer. Conductive material 30 is then deposited on the surface of the etched dielectric. Finally, the remaining areas 28 of the sacrificial layer are removed together with any overlying material. The resulting plurality of multi-layer thin film transistors is preferably in the form of an array which may in turn be formed into a display device by coupling each transistor in the array to a light-emitting cell.
摘要翻译：本发明涉及可用于在基板上制造多个多层薄膜晶体管的自对准图案化方法。该方法包括首先在牺牲层18的表面上形成图案化掩模20，牺牲层18是多层结构10的一部分，其包括基底12，导电层14，绝缘层16和牺牲层18.未图案化的区域然后蚀刻以除去牺牲层，绝缘层16和导电层14的相应区域，从而留下空隙。然后将一层电介质22沉积在蚀刻的多层结构上以至少基本上填充空隙。然后蚀刻沉积的电介质以便至少部分地暴露牺牲层的剩余区域28的侧面。然后将导电材料30沉积在蚀刻的电介质的表面上。最后，牺牲层的剩余区域28与任何上覆材料一起被去除。所得到的多个多层薄膜晶体管优选地是阵列的形式，其可以通过将阵列中的每个晶体管耦合到发光单元而依次形成为显示装置。

3. 发明授权

US07851344B2 Method of producing a substrate having areas of different hydrophilicity and/or oleophilicity on the same surface 有权
标题翻译：在相同表面上制备具有不同亲水性和/或亲油性区域的基材的方法
公开(公告)号：US07851344B2
公开(公告)日：2010-12-14
申请号：US11520668
申请日：2006-09-14
申请人： Thomas Kugler , Shunpu Li , Christopher Newsome , David Russell
发明人： Thomas Kugler , Shunpu Li , Christopher Newsome , David Russell
IPC分类号： H01L21/44
CPC分类号： H05K3/125 , B82Y20/00 , B82Y30/00 , H01L51/0004 , H01L51/0012 , H01L51/0097 , H01L2251/105 , H01L2251/5369 , H05K1/0393 , H05K3/1208 , H05K2203/013 , H05K2203/095 , H05K2203/097 , H05K2203/1173 , Y02E10/549 , Y02P70/521
摘要： The present invention relates to flexible substrates having on their surface a wetting contrast. The wetting contrast comprises adjacent areas of different hydrophilicity and/or oleophilicity. The present invention further relates to methods of production of such substrates and to methods of producing microelectronic components wherein electronically functional material is deposited onto said substrates.According to a first aspect of the present invention, a method of producing a flexible substrate having a wetting contrast is provided. The method includes the step of forming a first area comprising an inorganic material on a flexible substrate precursor to form a substrate wherein the inorganic material is at least partially exposed at the substrate surface and the first area constitutes a pattern on the precursor surface.
摘要翻译：本发明涉及在其表面上具有润湿对比度的柔性基底。润湿对比度包括不同亲水性和/或亲油性的相邻区域。本发明还涉及这种基材的制造方法以及生产微电子部件的方法，其中将电子功能材料沉积在所述基材上。根据本发明的第一方面，提供了具有润湿对比度的柔性基板的制造方法。该方法包括在柔性基板前体上形成包含无机材料的第一区域以形成基板的步骤，其中无机材料在基板表面处至少部分地暴露，并且第一区域在前体表面上构成图案。

4. 发明授权

US07468287B2 Method of fabricating a heterojunction of organic semiconducting polymers 有权
标题翻译：制备有机半导体聚合物异质结的方法
公开(公告)号：US07468287B2
公开(公告)日：2008-12-23
申请号：US11363063
申请日：2006-02-28
申请人： Christopher Newsome , Thomas Kugler , Shunpu Li , David Russell
发明人： Christopher Newsome , Thomas Kugler , Shunpu Li , David Russell
IPC分类号： H01L21/00
CPC分类号： H01L51/0005 , H01L51/0007 , H01L51/424 , Y02E10/549
摘要： Provided is a method of forming a heterojunction of contiguous layers of organic semiconducting polymers. The method comprises firstly forming a layer of a first organic semiconducting polymer on a substrate. A solution of a film-forming material is then deposited on the layer of the first organic semiconducting polymer. The first organic semiconducting polymer is insoluble in this solution and so is not disturbed by its deposition. The deposited solution is then dried to form a temporary film having a thickness of less then 20 nm formed from the film-forming material. Next a solution of a second organic semiconducting polymer dissolved in an organic solvent is deposited on the temporary film and this solution dried. The solubility of the material forming the temporary film in the organic solvent and the thickness of the temporary film are such that the organic solvent permeates through the thickness of the temporary film during drying of the solution of the second organic semiconducting polymer. This causes the temporary film to break down but without disturbing the layer of the first organic semiconducting polymer so that the layer of the second organic semiconducting polymer is formed contiguously on the layer of the first organic semiconducting polymer.
摘要翻译：提供了形成有机半导体聚合物的连续层的异质结的方法。该方法包括首先在衬底上形成第一有机半导体聚合物层。然后将成膜材料的溶液沉积在第一有机半导体聚合物的层上。第一种有机半导体聚合物不溶于该溶液，因此不会因其沉积而受到干扰。然后将沉积的溶液干燥以形成由成膜材料形成的厚度小于20nm的临时膜。接下来，将溶解在有机溶剂中的第二有机半导体聚合物的溶液沉积在临时膜上，并将该溶液干燥。形成临时膜的材料在有机溶剂中的溶解度和临时膜的厚度使得有机溶剂在第二有机半导体聚合物的溶液的干燥期间渗透临时膜的厚度。这导致临时膜破裂但不干扰第一有机半导体聚合物的层，使得第二有机半导体聚合物的层在第一有机半导体聚合物的层上连续形成。

5. 发明申请

US20070105396A1 High resolution structures defined by brush painting fluid onto surface energy patterned substrates 审中-公开
标题翻译：通过刷涂液体定义在表面能图案化基材上的高分辨率结构
公开(公告)号：US20070105396A1
公开(公告)日：2007-05-10
申请号：US11589207
申请日：2006-10-30
申请人： Shunpu Li , Christopher Newsome , David Russell , Thomas Kugler
发明人： Shunpu Li , Christopher Newsome , David Russell , Thomas Kugler
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L51/0003 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F7/0002 , H01L51/0012 , H01L51/0529 , H01L51/56
摘要： Disclosed is a method for fabricating an electronic device, the method comprising creating a surface energy pattern on a substrate and brush painting a first fluid onto the substrate to form a pattern of fluid corresponding to the surface energy pattern on the substrate. Also disclosed is a thin film transistor comprising a conductive layer, a layer of insulator formed on the conductive layer, a pattern of conductive material and a first self-assembled monolayer (SAM) formed on the layer of insulator, a second SAM formed on the conductive material, and a semiconductor layer formed on the first SAM and the second SAM. Further disclosed is a brush painting apparatus comprising an ink-absorbent brush head, an ink container connected to the brush head by an ink flow path and a conveyor belt, wherein a surface of the conveyor belt faces the brush head.
摘要翻译：公开了一种制造电子器件的方法，该方法包括在衬底上产生表面能量图案，并将第一流体刷涂到衬底上以形成与衬底上的表面能量图案相对应的流体图案。还公开了一种薄膜晶体管，其包括导电层，形成在导电层上的绝缘体层，导电材料图案和形成在绝缘体层上的第一自组装单层（SAM），形成在绝缘体层上的第二SAM 导电材料和形成在第一SAM和第二SAM上的半导体层。进一步公开了一种刷涂装置，其包括吸墨刷头，通过油墨流路连接到刷头的油墨容器和传送带，其中传送带的表面面向刷头。

6. 发明申请

US20070082438A1 Thin film transistor and method for fabrication of an electronic device 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20070082438A1
公开(公告)日：2007-04-12
申请号：US11540729
申请日：2006-10-02
申请人： Shunpu Li , Christopher Newsome , David Russell , Thomas Kugler
发明人： Shunpu Li , Christopher Newsome , David Russell , Thomas Kugler
IPC分类号： H01L21/8238
CPC分类号： H01L51/055 , H01L51/0512
摘要： A method for fabricating an electronic device is disclosed, the method comprising depositing a first layer of insulator over a substrate, depositing a first layer portion over the insulator using a printing technique, and removing a portion of the insulator using a photo-exposure technique or an etching technique, using the first layer portion as a mask. A vertical short channel thin film transistor is also disclosed, the transistor comprising a substrate, a first electrode formed over the substrate, a first layer of insulator formed over a portion of the first electrode, a second electrode formed over the first layer of insulator, a semiconductor layer forming a channel between the first and second electrodes, a dielectric layer formed over the semiconductor layer, and a gate electrode formed over the dielectric layer, wherein the gate electrode spans at least a part of the channel between the first and second electrodes.
摘要翻译：公开了一种用于制造电子器件的方法，所述方法包括在衬底上沉积第一绝缘体层，使用印刷技术在绝缘体上沉积第一层部分，以及使用照相曝光技术去除绝缘体的一部分，使用第一层部分作为掩模的蚀刻技术。还公开了一种垂直短沟道薄膜晶体管，所述晶体管包括衬底，形成在衬底上的第一电极，形成在第一电极的一部分上的第一绝缘体层，形成在第一绝缘体层上的第二电极，形成在所述第一和第二电极之间的沟道的半导体层，形成在所述半导体层上的电介质层以及形成在所述电介质层上的栅电极，其中所述栅电极跨越所述第一和第二电极之间的所述沟道的至少一部分。

7. 发明申请

US20070287270A1 Device fabrication by ink-jet printing materials into bank structures, and embossing tool 有权
标题翻译：通过喷墨印刷材料制成银行结构的装置和压花工具
公开(公告)号：US20070287270A1
公开(公告)日：2007-12-13
申请号：US11714098
申请日：2007-03-06
申请人： Shunpu Li , Christopher Newsome , David Russell , Thomas Kugler
发明人： Shunpu Li , Christopher Newsome , David Russell , Thomas Kugler
IPC分类号： H01L21/203 , B44C1/22
CPC分类号： H01L51/0005 , H01L21/0337 , H01L51/0037 , H01L2251/105 , Y10T156/1039
摘要： The invention disclosed relates to the fabrication of electronic devices. A method for fabricating an electronic device is disclosed, comprising embossing a surface of a work-piece 200, 202 using an embossing tool 204, so as to form a microstructure having at least two levels of thickness contrast on the work-piece surface, and depositing fluid 208 containing a functional material onto the microstructure. In a preferred embodiment, the step of depositing fluid 208 comprises ink-jet printing. An embossing tool 204 for creating a microstructure on a work-piece 200, 202 is also disclosed, the embossing tool 204 comprising a first surface and steps of at least two different heights relative to the first surface.
摘要翻译：所公开的发明涉及电子设备的制造。公开了一种用于制造电子装置的方法，包括使用压花工具204对工件200,202的表面进行压花，以形成在工件表面上具有至少两层厚度对比度的微结构，以及将含有功能材料的流体208沉积到微结构上。在优选实施例中，沉积流体208的步骤包括喷墨打印。还公开了用于在工件200,202上形成微结构的压花工具204，压花工具204包括第一表面和相对于第一表面的至少两个不同高度的台阶。

8. 发明申请

US20070066080A1 Method of producing a substrate having areas of different hydrophilicity and/or oleophilicity on the same surface 审中-公开
标题翻译：在相同表面上制备具有不同亲水性和/或亲油性区域的基材的方法
公开(公告)号：US20070066080A1
公开(公告)日：2007-03-22
申请号：US11517442
申请日：2006-09-08
申请人： Thomas Kugler , Shunpu Li , Christopher Newsome , David Russell
发明人： Thomas Kugler , Shunpu Li , Christopher Newsome , David Russell
IPC分类号： H01L21/302 , H01L21/461 , H01L21/31 , H01L21/469
CPC分类号： C08K3/36 , C08K9/06 , H01L51/0022 , H01L51/0541 , H01L2251/105
摘要： The present invention relates to substrates having wetting contrasts which include a top layer of polymer matrix and particles of an inorganic material. Such substrates can be processed in various ways which allow the production of good wetting contrasts by various processing means. According to a first aspect of the present invention, a method of producing a substrate having a surface comprising adjacent areas which have different hydrophilicities and/or oleophilicities is provided. The method comprises the step of etching away polymer from an area of the surface layer of a substrate precursor which comprises inorganic particles embedded in a polymer matrix. The etching exposes the inorganic particles at the surface to form one of the adjacent areas. The present invention is further directed to methods of producing a microelectronic component which involves depositing electronically functional material onto such a substrate. Further, the present invention is directed to substrates and substrate precursors.
摘要翻译：本发明涉及具有湿润对比度的衬底，其包括聚合物基质的顶层和无机材料的颗粒。可以以各种方式处理这样的基底，这些方式允许通过各种处理方法产生良好的润湿对比度。根据本发明的第一方面，提供一种制造具有包括具有不同亲水性和/或亲油性的相邻区域的表面的基材的方法。该方法包括从包含嵌入聚合物基质中的无机颗粒的衬底前体的表面层的区域中去除聚合物的步骤。蚀刻暴露表面处的无机颗粒以形成相邻区域中的一个。本发明进一步涉及制造微电子部件的方法，该方法涉及将电子功能材料沉积到这种基底上。此外，本发明涉及基板和基板前体。

9. 发明申请

US20060247132A1 Method of fabricating a heterojunction of organic semiconducting polymers 有权
标题翻译：制备有机半导体聚合物异质结的方法
公开(公告)号：US20060247132A1
公开(公告)日：2006-11-02
申请号：US11363063
申请日：2006-02-28
申请人： Christopher Newsome , Thomas Kugler , Shunpu Li , David Russell
发明人： Christopher Newsome , Thomas Kugler , Shunpu Li , David Russell
IPC分类号： H01L39/24
CPC分类号： H01L51/0005 , H01L51/0007 , H01L51/424 , Y02E10/549
摘要： Provided is a method of forming a heterojunction of contiguous layers of organic semiconducting polymers. The method comprises firstly forming a layer of a first organic semiconducting polymer on a substrate. A solution of a film-forming material is then deposited on the layer of the first organic semiconducting polymer. The first organic semiconducting polymer is insoluble in this solution and so is not disturbed by its deposition. The deposited solution is then dried to form a temporary film having a thickness of less then 20 nm formed from the film-forming material. Next a solution of a second organic semiconducting polymer dissolved in an organic solvent is deposited on the temporary film and this solution dried. The solubility of the material forming the temporary film in the organic solvent and the thickness of the temporary film are such that the organic solvent permeates through the thickness of the temporary film during drying of the solution of the second organic semiconducting polymer. This causes the temporary film to break down but without disturbing the layer of the first organic semiconducting polymer so that the layer of the second organic semiconducting polymer is formed contiguously on the layer of the first organic semiconducting polymer.
摘要翻译：提供了形成有机半导体聚合物的连续层的异质结的方法。该方法包括首先在衬底上形成第一有机半导体聚合物层。然后将成膜材料的溶液沉积在第一有机半导体聚合物的层上。第一种有机半导体聚合物不溶于该溶液，因此不会因其沉积而受到干扰。然后将沉积的溶液干燥以形成由成膜材料形成的厚度小于20nm的临时膜。接下来，将溶解在有机溶剂中的第二有机半导体聚合物的溶液沉积在临时膜上，并将该溶液干燥。形成临时膜的材料在有机溶剂中的溶解度和临时膜的厚度使得有机溶剂在第二有机半导体聚合物的溶液的干燥期间渗透临时膜的厚度。这导致临时膜破裂但不干扰第一有机半导体聚合物的层，使得第二有机半导体聚合物的层在第一有机半导体聚合物的层上连续形成。

10. 发明申请

US20060216851A1 Dedoping of organic semiconductors 有权
标题翻译：有机半导体的掺杂
公开(公告)号：US20060216851A1
公开(公告)日：2006-09-28
申请号：US11350725
申请日：2006-02-10
申请人： David Russell , Thomas Kugler , Christopher Newsome , Shunpu Li
发明人： David Russell , Thomas Kugler , Christopher Newsome , Shunpu Li
IPC分类号： H01L51/40
CPC分类号： C08G73/026 , C08G61/10 , C08G61/126 , C08G2261/312
摘要： The present invention relates to a method of dedoping an organic semiconductor comprising the step of contacting a doped organic semiconductor with a compound of formula (1): wherein R1-R8 each independently represents a hydrogen atom or a C1-C6 alkyl group which may be linear or branched and which may be optionally substituted with one or more hydroxyl groups and/or one or more halogen atoms and/or a C1-C3 alkoxy group; one or more pairs of R groups which are not hydrogen may join to form a cyclic group according to the following pairings: R1 and R2; R2 and R3; R3 and R4; R4 and R5; R5 and R6; R6 and R7; R7 and R8; and R8 and R1.
摘要翻译：本发明涉及一种去掺杂有机半导体的方法，包括使掺杂的有机半导体与式（1）化合物接触的步骤：其中R 1 -R 8，各自独立地表示氢原子或C 1 -C 6 -C 6烷基，其可以是直链或支链的，并且其可任选地被一个或多个羟基和/或一个或多个卤素原子和/或C 1 -C 3烷氧基; 一对或多对不是氢的R基团可以根据以下配对连接形成环状基团：R 1和R 2; R＆lt; 2＆gt;和＆lt; 3＆gt;; R＆lt; 3＆gt;和＆lt; 4＆gt;; R 4和R 5; R＆lt; 5＆gt;和＆lt; 6＆gt;; R＆lt; 6＆gt;和R＆lt; 7＆gt;; R＆lt; 7＆gt;和＆lt; 8＆gt;; 和R＆lt; 8＆gt;和R＆lt; 1＆gt;。

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