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1. 发明授权

US11476282B2 Active matrix substrate and method for manufacturing same 有权
公开(公告)号：US11476282B2
公开(公告)日：2022-10-18
申请号：US16984192
申请日：2020-08-04
申请人： Sharp Kabushiki Kaisha
发明人： Yoshihito Hara , Tohru Daitoh , Hajime Imai , Masaki Maeda , Tatsuya Kawasaki , Hideki Kitagawa , Yoshiharu Hirata
IPC分类号： H01L27/12 , G02F1/1343 , G02F1/1368 , G02F1/1362
摘要： An active matrix substrate includes gate bus lines; source bus lines; a lower insulating layer; an oxide semiconductor TFT; and a pixel electrode, in which the oxide semiconductor TFT includes an oxide semiconductor layer disposed on the lower insulating layer, a gate electrode, a source electrode, and a first ohmic conductive portion that is coupled to the oxide semiconductor layer and the source electrode, the lower insulating layer includes a source opening portion exposing at least a portion of the source electrode, the first ohmic conductive portion is disposed on the lower insulating layer and in the source opening portion and is in direct contact with at least the portion of the source electrode in the source opening portion, and the first region of the oxide semiconductor layer is in direct contact with an upper surface of the first ohmic conductive portion.

2. 发明授权

US11037962B2 Thin-film transistor array substrate and display device 有权
公开(公告)号：US11037962B2
公开(公告)日：2021-06-15
申请号：US16628048
申请日：2018-06-28
申请人： Sharp Kabushiki Kaisha
发明人： Tatsuya Kawasaki , Hideki Kitagawa , Yoshihito Hara , Masaki Maeda , Toshikatsu Itoh , Hajime Imai , Tohru Daitoh
IPC分类号： G02F1/1333 , G02F1/1345 , G02F1/1368 , H01L27/12 , G02F1/1362
摘要： The present invention provides a thin-film transistor array substrate that prevents semiconductor layers of thin-film transistor elements from having step disconnection even when the frame width is reduced. The thin-film transistor array substrate of the present invention includes a thin-film transistor element in a pixel region and a terminal in a terminal region. The thin-film transistor array substrate sequentially includes a support, an insulating layer, a gate electrode, a gate insulating layer, and a semiconductor layer in a cross-sectional view of the pixel region. A region with the insulating layer encompasses a region with the semiconductor layer in a plan view of the pixel region. The thin-film transistor array substrate sequentially includes the support, a lead line extending from the terminal, and the insulating layer in a cross-sectional view of the terminal region.

3. 发明授权

US09798203B2 Semiconductor device and display device 有权
公开(公告)号：US09798203B2
公开(公告)日：2017-10-24
申请号：US14431825
申请日：2013-09-25
申请人： Sharp Kabushiki Kaisha
发明人： Yukinobu Nakata , Masaki Maeda
IPC分类号： G02F1/1362 , H01L27/12 , H01L27/02 , G02F1/1368 , H01L21/768 , H01L29/24 , H01L29/786 , G02F1/1343 , G02F1/1345
CPC分类号： G02F1/136204 , G02F1/13452 , G02F1/13454 , G02F1/136277 , G02F1/136286 , G02F1/1368 , G02F2001/134372 , G02F2201/40 , H01L21/768 , H01L27/0292 , H01L27/0296 , H01L27/1225 , H01L27/124 , H01L27/1259 , H01L29/24 , H01L29/78606 , H01L29/7869
摘要： The array board 11b includes a first diode 29, a common line 25, a first shorting line 31, and the static protection portion 51. The first diode 29 include at least the first semiconductor portion 29d having outer edges 29d1 that cross the outer edges 29a1, 29b1 of first electrodes 29a, 29b in a plan view. The common line 25 is formed from the first metal film 34. The first shorting line 31 is formed from the second metal film 38 and crosses the common line 25. The static protection portion 51 is formed from the second metal film 38 or the protection film 37. At least a portion of the static protection portion 51 overlaps the common line 25 in a plan view. The static protection portion 51 is arranged closer to the first diode 29 than an intersection CPT of the common line 25 and the first shorting line 31. The static protection portion 51 includes at least a static dissipating portion 52 for dissipating static.

4. 发明授权

US11695020B2 Active matrix substrate and method for manufacturing same 有权
公开(公告)号：US11695020B2
公开(公告)日：2023-07-04
申请号：US17118666
申请日：2020-12-11
申请人： Sharp Kabushiki Kaisha
发明人： Hajime Imai , Tohru Daitoh , Teruyuki Ueda , Yoshihito Hara , Masaki Maeda , Tatsuya Kawasaki , Yoshiharu Hirata , Tetsuo Kikuchi
IPC分类号： H01L27/00 , H01L27/12
CPC分类号： H01L27/124 , H01L27/127 , H01L27/1225
摘要： An active matrix substrate includes a plurality of source bus lines, a lower insulating layer covering the source bus lines, a plurality of gate bus lines formed above the lower insulating layer, and an oxide semiconductor TFT disposed to correspond to each pixel area. The oxide semiconductor TFT includes an oxide semiconductor layer disposed on the lower insulating layer, and a gate electrode disposed above the oxide semiconductor layer. The gate electrode is formed in a different layer from the gate bus lines, and is disposed to be separated from another gate electrode disposed in an adjacent pixel area. The gate electrode is covered by an interlayer insulating layer. The gate bus line is disposed on the interlayer insulating layer and in a gate contact hole formed in the interlayer insulating layer, and is connected to the gate electrode in the gate contact hole.

5. 发明申请

US20210043656A1 ACTIVE MATRIX SUBSTRATE AND METHOD FOR MANUFACTURING SAME 有权
公开(公告)号：US20210043656A1
公开(公告)日：2021-02-11
申请号：US16984192
申请日：2020-08-04
申请人： Sharp Kabushiki Kaisha
发明人： Yoshihito Hara , Tohru Daitoh , Hajime Imai , Masaki Maeda , Tatsuya Kawasaki , Hideki Kitagawa , Yoshiharu Hirata
IPC分类号： H01L27/12 , G02F1/1343 , G02F1/1362 , G02F1/1368
摘要： An active matrix substrate includes gate bus lines; source bus lines; a lower insulating layer; an oxide semiconductor TFT; and a pixel electrode, in which the oxide semiconductor TFT includes an oxide semiconductor layer disposed on the lower insulating layer, a gate electrode, a source electrode, and a first ohmic conductive portion that is coupled to the oxide semiconductor layer and the source electrode, the lower insulating layer includes a source opening portion exposing at least a portion of the source electrode, the first ohmic conductive portion is disposed on the lower insulating layer and in the source opening portion and is in direct contact with at least the portion of the source electrode in the source opening portion, and the first region of the oxide semiconductor layer is in direct contact with an upper surface of the first ohmic conductive portion.

6. 发明授权

US10649293B2 Display device 有权
公开(公告)号：US10649293B2
公开(公告)日：2020-05-12
申请号：US16147583
申请日：2018-09-29
申请人： SHARP KABUSHIKI KAISHA
发明人： Hideki Kitagawa , Tohru Daitoh , Hajime Imai , Yoshihito Hara , Masaki Maeda , Toshikatsu Itoh , Tatsuya Kawasaki
IPC分类号： G09G1/00 , G02F1/1362 , G02F1/1345 , G02F1/1333 , G02F1/1343
摘要： A display panel includes a substrate, pixel electrodes, switching components, an electrode, a line, a terminal, an insulating film, and a conductive film. The switching components are disposed in a layer lower than the pixel electrodes. The electrode is disposed in a layer different from a layer in which the pixel electrodes are disposed. The line includes sections disposed in a layer lower than the switching components in a display area. The terminal is disposed in a layer upper than the line in a non-display area. The insulating film includes a section disposed between the line and the switching components in the display area and a section disposed between the terminal and the substrate in the non-display area. The conductive film is disposed on the insulating film in a layer between the line and the terminal to connect the line to the terminal.

7. 发明授权

US09443885B2 Semiconductor device and display device 有权
标题翻译：半导体器件和显示器件
公开(公告)号：US09443885B2
公开(公告)日：2016-09-13
申请号：US14431823
申请日：2013-09-25
申请人： Sharp Kabushiki Kaisha
发明人： Yukinobu Nakata , Masaki Maeda
IPC分类号： H01L27/12 , H01L27/02 , G02F1/1362 , G02F1/1333 , G02F1/1368
CPC分类号： H01L27/1244 , G02F1/133345 , G02F1/136204 , G02F1/136277 , G02F1/1368 , H01L27/0296 , H01L27/1225 , H01L27/1262 , H01L27/127 , H01L29/7869
摘要： An array board 11b includes a first diode 29, a contact portion 32, and a static protection portion 51. The first diode 29 includes first electrodes 29a, 29b and a first semiconductor portion 29d. The first electrodes 29a, 29b are formed from a second metal film 38. The first semiconductor portion 29d is connected to the first electrodes 29a, 29b via first diode-side holes 29c1, 29c2. The contact portion 32 includes agate line-side connecting portion 48 and a diode-side connecting portion 50. The gate line-side connecting portion 48 is formed from a first metal film at an end of a gate line 19. The diode-side connecting portion 50 is connected to the gate line-side connecting portion 48 via a contact portion-side hole 49a. The static protection portion 51 includes a static dissipating portion 52 and a static dissipation portion protection portion 53. The static dissipating portion 52 is formed from a semiconductor film 36 and for dissipating static electricity that builds up in one of the first diode 29 and the contact portion 32 in a stage prior to formation of the second metal film 38. The static dissipating portion protection portion 53 is formed from a protection film 37 and includes a static dissipating hole 53a that is a through hole formed at a position overlapping the static dissipating portion 52 in a plan view.
摘要翻译：阵列板11b包括第一二极管29，接触部分32和静态保护部分51.第一二极管29包括第一电极29a，29b和第一半导体部分29d。第一电极29a，29b由第二金属膜38形成。第一半导体部29d经由第一二极管侧孔29c1,29c2与第一电极29a，29b连接。接触部分32包括玛瑙线侧连接部分48和二极管侧连接部分50.栅极线侧连接部分48由栅极线19的端部处的第一金属膜形成。二极管侧连接部分50经由接触部分侧孔49a连接到栅极线侧连接部分48。静电保护部分51包括静电消散部分52和静电消散部分保护部分53.静电消散部分52由半导体膜36形成，并且用于消散积聚在第一二极管29和触点之一中的静电部分32在形成第二金属膜38之前的阶段中。静电消散部分保护部分53由保护膜37形成，并且包括静电消散孔53a，该静电消散孔53a是形成在与静电消散部分重叠的位置处的通孔 52在平面图。

8. 发明授权

US11804498B2 Method of manufacturing display device and display device 有权
公开(公告)号：US11804498B2
公开(公告)日：2023-10-31
申请号：US16880294
申请日：2020-05-21
申请人： SHARP KABUSHIKI KAISHA
发明人： Tatsuya Kawasaki , Tohru Daitoh , Hajime Imai , Hideki Kitagawa , Yoshihito Hara , Masaki Maeda , Yoshiharu Hirata , Teruyuki Ueda
IPC分类号： H01L27/12
CPC分类号： H01L27/1288 , H01L27/124 , H01L27/1262
摘要： The present invention has an object to reduce the number of necessary masks to reduce manufacturing cost. A method of manufacturing a display device includes: forming electrodes or first lines; forming a first insulating film covering the electrodes or the first lines; forming a second insulating film covering the first insulating film; collectively forming first contact holes through the first insulating film and the second insulating film so as to expose parts of the electrodes or parts of the first lines; planarizing a surface of the second insulating film; and forming a first conductive layer to be connected from the surface of the second insulating film to the exposed parts of the electrodes or the exposed parts of the first lines via the first contact holes.

9. 发明授权

US11569324B2 Active matrix substrate and method for manufacturing same 有权
公开(公告)号：US11569324B2
公开(公告)日：2023-01-31
申请号：US17338750
申请日：2021-06-04
申请人： Sharp Kabushiki Kaisha
发明人： Hajime Imai , Tohru Daitoh , Teruyuki Ueda , Yoshihito Hara , Masaki Maeda , Tatsuya Kawasaki , Yoshiharu Hirata
IPC分类号： H01L27/32 , H01L29/66 , H01L29/786
摘要： An active matrix substrate includes a first TFT and a second TFT, in which the first TFT includes a first oxide semiconductor layer and a first gate electrode arranged on a part of the first oxide semiconductor layer with a first gate insulating layer interposed therebetween, the first gate insulating layer has a layered structure including a first insulating film and a second insulating film arranged on the first insulating film, the second TFT includes a second oxide semiconductor layer having a higher mobility than the first oxide semiconductor layer and a second gate electrode arranged on a part of the second oxide semiconductor layer with a second gate insulating layer interposed therebetween, and the second gate insulating layer includes the second insulating film and does not include the first insulating film, and the second TFT further includes a lower insulating layer including the first insulating film arranged between the second oxide semiconductor layer and a substrate.

10. 发明授权

US11079886B2 Display substrate and display device 有权
公开(公告)号：US11079886B2
公开(公告)日：2021-08-03
申请号：US16491346
申请日：2018-03-02
申请人： SHARP KABUSHIKI KAISHA
发明人： Masaki Maeda , Yoshihito Hara
IPC分类号： G06F3/044 , G06F3/041
摘要： A display substrate includes a substrate, a first insulator, a metal film, a second insulator, an alignment film, a line, and film forming area defining recesses. The substrate includes a display area and a non-display area. The metal film is disposed in a layer upper than the first insulator. The second insulator is disposed upper than the metal film and has a thickness smaller than a thickness of the first insulator. The alignment film is disposed upper than the second insulator. The line extends to straddle the display area and the non-display area and includes a section of the metal film. The film forming area defining recesses in the non-display area to extend in a direction crossing an extending direction of the line but not to overlap the line include recessed sections of the first insulator to define a forming area of the alignment film.

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