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1. 发明授权

US08928081B2 Semiconductor device having display device 有权
标题翻译：具有显示装置的半导体装置
公开(公告)号：US08928081B2
公开(公告)日：2015-01-06
申请号：US13848122
申请日：2013-03-21
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hisashi Ohtani
IPC分类号： H01L29/72 , H01L27/12 , H01L29/423 , H01L29/49 , H01L29/786 , G02F1/1345
CPC分类号： H01L27/124 , G02F1/13454 , H01L27/1237 , H01L29/42384 , H01L29/4908 , H01L29/78621
摘要： A semiconductor integrated circuit having a high withstand voltage TFT and a TFT which is capable of operating at high speed in a circuit of thin film transistors (TFT) and methods for fabricating such circuit will be provided. A gate insulating film of the TFT required to operate at high speed (e.g., TFT used for a logic circuit) is relatively thinned less than a gate insulating film of the TFT which is required to have high withstand voltage (e.g., TFT used for switching high voltage signals).
摘要翻译：将提供一种具有高耐压TFT和能够在薄膜晶体管（TFT）的电路中高速运行的TFT的半导体集成电路及其制造方法。 TFT需要高速操作所需的栅极绝缘膜（例如，用于逻辑电路的TFT）比要求具有高耐压的TFT的栅极绝缘膜（例如用于开关的TFT）要薄高压信号）。

2. 发明授权

US08576348B2 Reflective liquid crystal display panel and device using same 有权
公开(公告)号：US08576348B2
公开(公告)日：2013-11-05
申请号：US13848234
申请日：2013-03-21
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Hisashi Ohtani , Jun Koyama , Satoshi Teramoto
IPC分类号： G02F1/136
CPC分类号： G02F1/1368 , G02B27/017 , G02B2027/0138 , G02F1/133553 , G02F1/13454 , G02F2203/02 , H01L27/124 , H01L29/41733
摘要： There is disclosed an active matrix reflective liquid crystal display panel on which an active matrix circuit is integrated with peripheral driver circuits. Metal lines in the peripheral driver circuits are formed simultaneously with pixel electrodes. Thus, neither the process sequence nor the structure is complicated.

3. 发明授权

US10229555B2 Card game machine 有权
公开(公告)号：US10229555B2
公开(公告)日：2019-03-12
申请号：US15961109
申请日：2018-04-24
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hisashi Ohtani
IPC分类号： A63F9/24 , A63F13/00 , G06F17/00 , G06F19/00 , G07F17/32
摘要： An object is to provide a card game machine capable of enhancing gameplay. A card game machine has a game board including a plurality of reader/writers configured to communicate with a semiconductor device which is mounted on a card and capable of wireless communication, and a control device connected to the reader/writer and configured to determine the position or orientation of the card or whether the card is put face up or down based on a signal from the reader/writer. By arrangement of a plurality of reader/writers and RF chips in the game board, not only data of the card but also signal strength can be detected, and the detailed position of an RF chip of the card which is placed on the game board can be specified.

4. 发明授权

US09553114B2 Display device and electronic device with a color filter 有权
标题翻译：显示设备和带有滤色片的电子设备
公开(公告)号：US09553114B2
公开(公告)日：2017-01-24
申请号：US14516103
申请日：2014-10-16
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Masataka Nakada , Hidenori Mori , Hisashi Ohtani
IPC分类号： H01L29/10 , H01L27/12 , G02F1/1335 , G02F1/1362
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/133553 , G02F1/136204 , G02F2001/136222 , G02F2201/123 , G02F2203/02 , H01L27/1225 , H01L27/1248 , H01L27/1255 , H01L29/24 , H01L29/7869
摘要： A novel display device capable of adjusting color purity is provided. A novel display device with improved adhesion of a color filter is provided. A novel display device capable of excellent reflective display is provided. The display device includes a transistor, a reflective electrode layer formed on the same surface as a source electrode layer or a drain electrode layer of the transistor, a first insulating layer over the reflective electrode layer, a coloring layer which is over the first insulating layer and overlaps with the reflective electrode layer, a second insulating layer over the coloring layer, and a pixel electrode layer over the second insulating layer. The coloring layer includes at least a first opening and a second opening. The pixel electrode layer is electrically connected to the transistor through the first opening. The second insulating layer is in contact with the first insulating layer in the second opening.
摘要翻译：提供了能够调节色纯度的新型显示装置。提供了一种具有改进的滤色器附着力的新型显示装置。提供能够出色的反射显示的新颖的显示装置。显示装置包括：晶体管，形成在与晶体管的源电极层或漏极电极层相同的表面上的反射电极层，反射电极层上的第一绝缘层，位于第一绝缘层之上的着色层并与反射电极层重叠，着色层上的第二绝缘层，以及位于第二绝缘层上的像素电极层。着色层至少包括第一开口和第二开口。像素电极层通过第一开口与晶体管电连接。第二绝缘层与第二开口中的第一绝缘层接触。

5. 发明申请

US20140247412A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20140247412A1
公开(公告)日：2014-09-04
申请号：US14274888
申请日：2014-05-12
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Hisashi Ohtani
IPC分类号： G02F1/1362
CPC分类号： G02F1/136286 , G02F1/13454 , G11B2220/2545 , H01L27/1255 , H01L27/1277 , H01L29/04 , H01L29/045 , H01L29/66757 , H01L29/78675
摘要： A semiconductor device includes TFTs designed in accordance with characteristics of circuits. In a first structure of the invention, the TFT is formed by using a crystalline silicon film made of a unique crystal structure body. The crystal structure body has a structure in which rod-like or flattened rod-like crystals grow in a direction parallel to each other. In a second structure of the invention, growth distances of lateral growth regions are made different from each other in accordance with channel lengths, of the TFTs. By this, characteristics of TFTs formed in one lateral growth region can be made as uniform as possible.
摘要翻译：半导体器件包括根据电路特性设计的TFT。在本发明的第一结构中，通过使用由独特的晶体结构体制成的晶体硅膜形成TFT。晶体结构体具有棒状或扁平状的棒状晶体在彼此平行的方向上生长的结构。在本发明的第二结构中，根据TFT的沟道长度，使横向生长区域的生长距离彼此不同。由此，可以使形成在一个侧向生长区域中的TFT的特性尽可能均匀。

6. 发明授权

US10096795B2 Display device and method for manufacturing the display device 有权
公开(公告)号：US10096795B2
公开(公告)日：2018-10-09
申请号：US15262629
申请日：2016-09-12
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Satoshi Murakami , Hisashi Ohtani , Shunpei Yamazaki
IPC分类号： H01L51/52 , H01L27/32 , H01L51/00 , H01L51/56
摘要： It is an object of the present invention to provide a technology for manufacturing a highly reliable display device at a low cost with high yield. In the present invention, a spacer is formed over a pixel electrode, thereby protecting the pixel electrode layer from a mask in formation of an electroluminescent layer. In addition, since a layer that includes an organic material that has water permeability is sealed in a display device with a sealing material and the sealing material and the layer that includes the organic material are not in contact, deterioration of a light-emitting element due to a contaminant such as water can be prevented. The sealing material is formed in a portion of a driver circuit region in the display device, and thus, the narrower frame margin of the display device can also be accomplished.

7. 发明授权

US09444069B2 Display device and method for manufacturing the display device 有权
标题翻译：用于制造显示装置的显示装置和方法
公开(公告)号：US09444069B2
公开(公告)日：2016-09-13
申请号：US13731129
申请日：2012-12-31
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Satoshi Murakami , Hisashi Ohtani , Shunpei Yamazaki
IPC分类号： H01L51/52 , H01L27/32 , H01L51/00 , H01L51/56
CPC分类号： H01L51/5246 , H01L27/3225 , H01L27/3244 , H01L27/3246 , H01L27/3276 , H01L27/3295 , H01L27/3297 , H01L51/0005 , H01L51/5203 , H01L51/5237 , H01L51/525 , H01L51/5253 , H01L51/56 , H01L2251/5323
摘要： It is an object of the present invention to provide a technology for manufacturing a highly reliable display device at a low cost with high yield. In the present invention, a spacer is formed over a pixel electrode, thereby protecting the pixel electrode layer from a mask in formation of an electroluminescent layer. In addition, since a layer that includes an organic material that has water permeability is sealed in a display device with a sealing material and the sealing material and the layer that includes the organic material are not in contact, deterioration of a light-emitting element due to a contaminant such as water can be prevented. The sealing material is formed in a portion of a driver circuit region in the display device, and thus, the narrower frame margin of the display device can also be accomplished.
摘要翻译：本发明的目的是提供一种以高成本低成本制造高度可靠的显示装置的技术。在本发明中，在像素电极上形成间隔物，从而在形成电致发光层时保护像素电极层免受掩模的影响。此外，由于包含具有透水性的有机材料的层被密封在具有密封材料的显示装置中，并且密封材料和包含有机材料的层不接触，所以发光元件的劣化由于可以防止诸如水的污染物。密封材料形成在显示装置中的驱动电路区域的一部分中，因此也可以实现显示装置的较窄的边缘。

8. 发明授权

US09389477B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09389477B2
公开(公告)日：2016-07-12
申请号：US14274888
申请日：2014-05-12
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Hisashi Ohtani
IPC分类号： H01L29/417 , H01L29/786 , G02F1/1362 , H01L29/04 , H01L29/66 , H01L27/12 , G02F1/1345
CPC分类号： G02F1/136286 , G02F1/13454 , G11B2220/2545 , H01L27/1255 , H01L27/1277 , H01L29/04 , H01L29/045 , H01L29/66757 , H01L29/78675
摘要： A semiconductor device includes TFTs designed in accordance with characteristics of circuits. In a first structure of the invention, the TFT is formed by using a crystalline silicon film made of a unique crystal structure body. The crystal structure body has a structure in which rod-like or flattened rod-like crystals grow in a direction parallel to each other. In a second structure of the invention, growth distances of lateral growth regions are made different from each other in accordance with channel lengths, of the TFTs. By this, characteristics of TFTs formed in one lateral growth region can be made as uniform as possible.
摘要翻译：半导体器件包括根据电路特性设计的TFT。在本发明的第一结构中，通过使用由独特的晶体结构体制成的晶体硅膜形成TFT。晶体结构体具有棒状或扁平状的棒状晶体在彼此平行的方向上生长的结构。在本发明的第二结构中，根据TFT的沟道长度，使横向生长区域的生长距离彼此不同。由此，可以使形成在一个侧向生长区域中的TFT的特性尽可能均匀。

9. 发明授权

US09214493B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US09214493B2
公开(公告)日：2015-12-15
申请号：US14337305
申请日：2014-07-22
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hisashi Ohtani
IPC分类号： H01L51/00 , G09G5/02 , H01L27/15 , H05B33/08 , H05B33/14 , H01L33/62
CPC分类号： H01L27/156 , H01L33/62 , H05B33/0821 , H05B33/0857 , H05B33/145
摘要： It is an object of the invention to provide a light emitting device in which burden on a light emitting element having low luminous efficiency is relieved, and the deterioration of a light emitting element, the reduction in color reproduction due to the deteriorated light emitting element, and increase in electric power consumption can be suppressed. A light emitting device according to the invention has light emitting elements each of which emits one of colors corresponding to three primary colors. Further, one feature of the light emitting device according to the invention has a light emitting element which emits a neutral color. The light emitting device according to the invention has a structure in which a plurality of pixels having light emitting elements each of which emits one of colors corresponding to three primary colors, and a light emitting element which emits a neutral color as one group, are arranged.
摘要翻译：本发明的目的是提供一种发光装置，其中减轻了发光效率低的发光元件的负担，并且发光元件的劣化，由于劣化的发光元件引起的色彩再现的减少，并且可以抑制电力消耗的增加。根据本发明的发光器件具有发光元件，每个发光元件发射对应于三原色的一种颜色。此外，根据本发明的发光器件的一个特征是具有发出中性色的发光元件。根据本发明的发光器件具有这样的结构，其中，具有发光元件的多个像素发出与三原色对应的颜色，并且发射中性色的发光元件作为一组，。

10. 发明申请

US20140291667A1 DISPLAY DEVICE AND ELECTRONIC DEVICE 有权
标题翻译：显示设备和电子设备
公开(公告)号：US20140291667A1
公开(公告)日：2014-10-02
申请号：US14217585
申请日：2014-03-18
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Masataka Nakada , Hidenori Mori , Hisashi Ohtani
IPC分类号： H01L27/12
CPC分类号： H01L27/124 , G02F1/133345 , G02F1/133553 , G02F1/13439 , G02F1/1368 , G02F2001/136218 , H01L29/41733 , H01L29/78618
摘要： A novel display device capable of excellent reflective display is provided. The display device includes a transistor including a gate electrode layer, a gate insulating layer over the gate electrode layer, a semiconductor layer over the gate insulating layer, and a source electrode layer and a drain electrode layer over the gate insulating layer and the semiconductor layer; a reflective electrode layer on the same plane as the source electrode layer and the drain electrode layer; a coloring layer overlapping with the reflective electrode layer; a pixel electrode layer overlapping with the coloring layer; and an anti-oxidation conductive layer connected to one of the source electrode layer and the drain electrode layer. The pixel electrode layer is connected to the transistor through the anti-oxidation conductive layer.
摘要翻译：提供能够出色的反射显示的新颖的显示装置。显示装置包括晶体管，其包括栅极电极层，栅极电极层上的栅极绝缘层，栅极绝缘层上的半导体层以及栅极绝缘层和半导体层上的源电极层和漏电极层 ; 与源电极层和漏电极层在同一平面上的反射电极层; 着色层与反射电极层重叠; 与着色层重叠的像素电极层; 以及连接到源极电极层和漏极电极层之一的抗氧化导电层。像素电极层通过抗氧化导电层与晶体管连接。

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