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1. 发明授权

US08280177B2 Encoding device using parallelized encoding, decoding device using parallelized decoding, and image forming device, method, and program storage medium including the same 有权
标题翻译：使用并行化编码的编码装置，使用并行解码的解码装置，以及包括其的图像形成装置，方法和程序存储介质
公开(公告)号：US08280177B2
公开(公告)日：2012-10-02
申请号：US12466802
申请日：2009-05-15
申请人： Seishiro Kato , Yoshihiko Nemoto , Taro Yokose , Tomoki Taniguchi
发明人： Seishiro Kato , Yoshihiko Nemoto , Taro Yokose , Tomoki Taniguchi
IPC分类号： G06K9/36 , G06K9/46
CPC分类号： H04N19/423 , H04N19/50
摘要： An encoding device includes a first memory that stores image data, plural second memories that are associated with plural target pixels in the image data, each second memory storing pixel data of one or more reference pixels near the associated target pixel thereof, a controller that causes each second memory to store pixel data of the one or more reference pixels near the associated target pixel thereof specified from the image data stored in the first memory, and plural encoders that perform encoding on each of the plural target pixels by estimating pixel data of each target pixel using pixel data of the one or more reference pixels near each respective target pixel stored in the plural second memories wherein the plural target pixels have different positions in a subscanning direction such that one target pixel does not overlap with another target pixel in a main scanning direction, and the total amount of data of all of the reference pixels used by the plural encoders is equal to or less than the amount of information of one line of image data stored in the first memory.
摘要翻译：编码装置包括存储图像数据的第一存储器，与图像数据中的多个目标像素相关联的多个第二存储器，每个第二存储器存储其相关联的目标像素附近的一个或多个参考像素的像素数据，每个第二存储器，用于存储从存储在第一存储器中的图像数据指定的相关联的目标像素附近的一个或多个参考像素的像素数据;以及多个编码器，通过估计每个像素数据的像素数据，目标像素使用存储在多个第二存储器中的每个相应目标像素附近的一个或多个参考像素的像素数据，其中多个目标像素在副扫描方向上具有不同的位置，使得一个目标像素不与主要的另一目标像素重叠扫描方向，并且由多个编码器使用的所有参考像素的总数据量等于o r小于存储在第一存储器中的一行图像数据的信息量。

2. 发明申请

US20100104204A1 ENCODING DEVICE, DECODING DEVICE, IMAGE FORMING DEVICE, METHOD, AND PROGRAM STORAGE MEDIUM 有权
标题翻译：编码设备，解码设备，图像形成设备，方法和程序存储介质
公开(公告)号：US20100104204A1
公开(公告)日：2010-04-29
申请号：US12466802
申请日：2009-05-15
申请人： Seishiro KATO , Yoshihiko Nemoto , Taro Yokose , Tomoki Taniguchi
发明人： Seishiro KATO , Yoshihiko Nemoto , Taro Yokose , Tomoki Taniguchi
IPC分类号： G06K9/36
CPC分类号： H04N19/423 , H04N19/50
摘要： An encoding device includes a first memory that stores image data, plural second memories that are associated with plural target pixels in the image data, each second memory storing pixel data of one or more reference pixels near the associated target pixel thereof, a controller that causes each second memory to store pixel data of the one or more reference pixels near the associated target pixel thereof specified from the image data stored in the first memory, and plural encoders that perform encoding on each of the plural target pixels by estimating pixel data of each target pixel using pixel data of the one or more reference pixels near each respective target pixel stored in the plural second memories wherein the plural target pixels have different positions in a subscanning direction such that one target pixel does not overlap with another target pixel in a main scanning direction, and the total amount of data of all of the reference pixels used by the plural encoders is equal to or less than the amount of information of one line of image data stored in the first memory.
摘要翻译：编码装置包括存储图像数据的第一存储器，与图像数据中的多个目标像素相关联的多个第二存储器，每个第二存储器存储其相关联的目标像素附近的一个或多个参考像素的像素数据，每个第二存储器，用于存储从存储在第一存储器中的图像数据指定的相关联的目标像素附近的一个或多个参考像素的像素数据;以及多个编码器，通过估计每个像素数据的像素数据，目标像素使用存储在多个第二存储器中的每个相应目标像素附近的一个或多个参考像素的像素数据，其中多个目标像素在副扫描方向上具有不同的位置，使得一个目标像素不与主要的另一目标像素重叠扫描方向，并且由多个编码器使用的所有参考像素的总数据量等于o r小于存储在第一存储器中的一行图像数据的信息量。

3. 发明授权

US07452751B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07452751B2
公开(公告)日：2008-11-18
申请号：US11281727
申请日：2005-11-18
申请人： Yoshihiko Nemoto , Kazumasa Tanida , Kenji Takahashi
发明人： Yoshihiko Nemoto , Kazumasa Tanida , Kenji Takahashi
IPC分类号： H01L21/00
CPC分类号： H01L25/50 , H01L21/56 , H01L21/8221 , H01L23/3107 , H01L23/481 , H01L24/81 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L27/0688 , H01L2224/05571 , H01L2224/05573 , H01L2224/16 , H01L2224/81191 , H01L2224/81801 , H01L2224/97 , H01L2225/06517 , H01L2225/0652 , H01L2225/06524 , H01L2225/06541 , H01L2225/1058 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/15331 , H01L2924/18161 , H01L2924/19043 , H01L2224/81 , H01L2224/05599
摘要： Semiconductor device includes a pair of substrates (1, 2) disposed oppositely, semiconductor elements (5, 6) formed in the substrates (1, 2), respectively, and having semiconductor circuits (3, 4) and electrodes (7, 8), respectively, a wiring conductor (9) interposed between the electrodes (7, 8), and a through electrode (12) extending through one substrate (1) and connected to the electrode (7) via the wiring conductor (9). The other substrate (2) is disposed laterally of the through electrode (12). Surface of the through electrode (12) projecting from the one substrate (1) and lateral surface of the element (6) are coated with an insulation material (13). The through electrode (12) has one end exposed in a back surface of the one substrate (1), while other end is positioned flush with a back surface of the other substrate (2), being exposed.
摘要翻译：半导体器件包括分别相对设置的形成在基板（1,2）中并具有半导体电路（3,4）和电极（7,8）的半导体元件（5,6）的一对基板（1,2）分别插入在电极（7,8）之间的布线导体（9）和延伸穿过一个基板（1）并经由布线导体（9）连接到电极（7）的通孔（12）。另一基板（2）设置在贯通电极（12）的横向。从一个基板（1）伸出的贯通电极（12）和元件（6）的侧面的表面涂有绝缘材料（13）。通孔电极（12）的一端暴露在一个基板（1）的背面，另一端与另一个基板（2）的背面齐平，露出。

4. 发明授权

US07218131B2 Inspection probe, method for preparing the same, and method for inspecting elements 失效
标题翻译：检验探针，其制备方法以及检查元件的方法
公开(公告)号：US07218131B2
公开(公告)日：2007-05-15
申请号：US11074243
申请日：2005-03-07
申请人： Michinobu Tanioka , Yoshihiko Nemoto , Katsuyuki Ito
发明人： Michinobu Tanioka , Yoshihiko Nemoto , Katsuyuki Ito
IPC分类号： G01R31/02
CPC分类号： G01R31/2887
摘要： An inspection probe comprises resilient probe pins having electric contacts disposed in positions corresponding to electrodes of an external terminal of a semiconductor device, a base substrate including pitch-expansion wiring layers of the probe pins, and a backup substrate, the base substrate, and a flexible substrate, wherein at least one precious metal layer is disposed at the tip of the probe pins on the side having the electric contact for contacting the electrodes of the semiconductor device to be inspected, at least one metal layer is disposed on the probe pins and the pitch-expansion wiring layers, the precious metal layer and the metal layer are composed of the same material or composed of different materials, and a roughness pattern comprising fine marks is provided on the surfaces of the probe pins on the side having the electric contacts for contacting the electrodes of the semiconductor device to be inspected.
摘要翻译：检查探针包括弹性探针，其具有设置在与半导体器件的外部端子的电极相对应的位置的电触点，包括探针的俯仰扩展布线层的基底基板以及备用基板，基底基板和柔性基板，其中至少一个贵金属层设置在具有用于接触要检查的半导体器件的电极的电接触侧的探针的尖端处，至少一个金属层设置在探针上，间距膨胀布线层，贵金属层和金属层由相同的材料构成或由不同的材料构成，并且在具有电触点的一侧的探针的表面上设置包括细痕的粗糙图案用于接触待检查的半导体器件的电极。

5. 发明申请

US20070018320A1 Semiconductor chip production method, semiconductor device production method, semiconductor chip, and semiconductor device 有权
标题翻译：半导体芯片生产方法，半导体器件制造方法，半导体芯片和半导体器件
公开(公告)号：US20070018320A1
公开(公告)日：2007-01-25
申请号：US11518889
申请日：2006-09-12
申请人： Kazumasa Tanida , Yoshihiko Nemoto , Naotaka Tanaka
发明人： Kazumasa Tanida , Yoshihiko Nemoto , Naotaka Tanaka
IPC分类号： H01L23/48
CPC分类号： H01L25/50 , H01L21/76898 , H01L23/3128 , H01L23/481 , H01L24/11 , H01L24/48 , H01L25/0657 , H01L2224/02372 , H01L2224/06181 , H01L2224/13025 , H01L2224/13099 , H01L2224/14181 , H01L2224/16145 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06586 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2224/45099
摘要： A semiconductor chip production method including the steps of: forming a front side recess in a semiconductor substrate; depositing a metal material in the front side recess to form a front side electrode electrically connected to a functional device formed on the front surface; removing a rear surface portion of the semiconductor substrate to reduce the thickness of the semiconductor substrate to a thickness greater than the depth of the front side recess; forming a rear side recess communicating with the front side recess in the rear surface of the semiconductor substrate after the thickness reducing step; and depositing a metal material in the rear side recess to form a rear side electrode electrically connected to the front side electrode for formation of a through-electrode.
摘要翻译：一种半导体芯片制造方法，包括以下步骤：在半导体衬底中形成前侧凹部; 在所述前侧凹部中沉积金属材料，以形成与形成在所述前表面上的功能元件电连接的前侧电极; 去除半导体衬底的后表面部分以将半导体衬底的厚度减小到大于前侧凹槽的深度的厚度; 在所述厚度减小步骤之后形成与所述半导体衬底的后表面中的所述前侧凹部连通的后侧凹部; 以及在后侧凹部中沉积金属材料，以形成与前侧电极电连接以形成贯通电极的后侧电极。

6. 发明申请

US20050224949A1 Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050224949A1
公开(公告)日：2005-10-13
申请号：US11150296
申请日：2005-06-13
申请人： Yoshihiko Nemoto
发明人： Yoshihiko Nemoto
IPC分类号： H01L23/12 , H01L21/56 , H01L21/60 , H01L21/68 , H01L23/31 , H01L23/485 , H01L25/10 , H01L25/11 , H01L25/18 , H01L23/48
CPC分类号： H01L21/568 , H01L23/3107 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L24/85 , H01L24/91 , H01L25/105 , H01L2224/02319 , H01L2224/02333 , H01L2224/02371 , H01L2224/04105 , H01L2224/05554 , H01L2224/06182 , H01L2224/1134 , H01L2224/12105 , H01L2224/13022 , H01L2224/13099 , H01L2224/45015 , H01L2224/451 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48471 , H01L2224/48699 , H01L2224/48992 , H01L2224/48997 , H01L2224/49175 , H01L2224/78301 , H01L2224/85001 , H01L2224/85005 , H01L2224/85186 , H01L2224/85205 , H01L2224/85951 , H01L2225/1035 , H01L2225/1058 , H01L2225/1064 , H01L2225/1094 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01039 , H01L2924/01057 , H01L2924/01074 , H01L2924/01078 , H01L2924/014 , H01L2924/12044 , H01L2924/15331 , H01L2924/181 , H01L2924/1815 , H01L2924/18165 , H01L2924/00 , H01L2224/48227 , H01L2924/00015 , H01L2924/00012 , H01L2224/4554 , H01L2224/85399 , H01L2224/05599
摘要： A semiconductor device having a structure miniaturizable through simple fabrication steps and a method of fabricating a semiconductor device capable of remarkably improving production efficiency are obtained. The semiconductor device comprises a semiconductor chip including a semiconductor circuit having a prescribed function and an electrode on one main surface, a wire having a first end connected with the electrode and a second end having a connecting terminal connected to an external device and an insulator sealing at least the main surface of the semiconductor chip. The connecting terminal provided on the second end of the wire is a part formed while keeping a state integrated with the remaining part of the wire, and exposed on a bottom surface opposite to the upper surface of the insulator closer to the main surface.
摘要翻译：可以获得具有通过简单的制造步骤可微型化的结构的半导体器件以及能够显着提高生产效率的制造半导体器件的方法。该半导体器件包括半导体芯片，其包括具有规定功能的半导体电路和一个主表面上的电极，具有与电极连接的第一端的导线和具有连接到外部装置的连接端子的第二端和绝缘体密封至少是半导体芯片的主表面。设置在电线的第二端的连接端子是在保持与电线的剩余部分一体化的状态下形成的部分，并且暴露在靠近主表面的与绝缘体的上表面相对的底表面上。

7. 发明授权

US06875672B2 Method of manufacturing a semiconductor device with penetration electrodes that protrude from a rear side of a substrate formed by thinning the substrate 有权
标题翻译：制造半导体器件的方法，该半导体器件具有从通过使衬底变薄而形成的衬底的后侧突出的穿透电极
公开(公告)号：US06875672B2
公开(公告)日：2005-04-05
申请号：US10629695
申请日：2003-07-30
申请人： Yoshihiko Nemoto , Tomonori Fujii , Masahiro Sunohara , Tomotoshi Sato
发明人： Yoshihiko Nemoto , Tomonori Fujii , Masahiro Sunohara , Tomotoshi Sato
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/60 , H01L21/68 , H01L21/768 , H01L23/48 , H01L21/4757
CPC分类号： H01L21/6835 , H01L21/76898 , H01L23/481 , H01L24/81 , H01L2221/6834 , H01L2224/136 , H01L2224/8121 , H01L2224/81815 , H01L2924/01068 , H01L2924/12044 , Y10S438/928 , H01L2924/014
摘要： A method for manufacturing a semiconductor device can prevent defective products resulting from a plating liquid when surfaces of protruded portions of penetration electrodes are subjected to plating. An organic insulation film (14) is formed on one surface of a substrate proper (10), and a support member (16) is adhered to the organic insulation film (adhesion step). A rear side of the substrate proper is removed until protruded portions (6) of penetration electrodes (7) are exposed, thereby to form a semiconductor substrate (5). Plating films (8) are formed on the surfaces of the protruded portions (6), and the support member and the organic insulation film are removed from the semiconductor substrate. The organic insulation film has an adhesive property and chemical resistance to chemical substances used in respective steps after the adhesion step, and it is at least dissolved in or peeled off from a chemical substance used in the removal step.
摘要翻译：当穿透电极的突出部分的表面进行电镀时，半导体器件的制造方法可以防止电镀液产生的不良品。在基板本体（10）的一个表面上形成有机绝缘膜（14），并且将有机绝缘膜（粘合步骤）上的支撑部件（16）粘合。去除衬底本体的后侧直到暴露穿透电极（7）的突出部分（6），从而形成半导体衬底（5）。在突出部分（6）的表面上形成电镀膜（8），从半导体衬底去除支撑件和有机绝缘膜。有机绝缘膜在粘合步骤之后的各个步骤中具有对化学物质的粘合性和耐化学性，并且至少溶解或从去除步骤中使用的化学物质剥离。

8. 发明授权

US6154287A Printing device 失效
标题翻译：印刷装置
公开(公告)号：US6154287A
公开(公告)日：2000-11-28
申请号：US955319
申请日：1997-10-21
申请人： Yoshihiko Nemoto , Masanori Satake
发明人： Yoshihiko Nemoto , Masanori Satake
IPC分类号： G06F3/12 , G06F13/00 , G06K15/00 , G06F15/00
CPC分类号： G06K15/00 , G06K2215/0011
摘要： A printing device that comprises a receiver for receiving print data from a host computer, a transmitter for transmitting to the host computer a reception process completion signal indicating that the receiver completes the receiving of print data, a recognizing device for recognizing that the host computer requests the receiver and transmitter to change a communication protocol to another, and an altering device for altering the timing of transmitting a reception process completion signal sent by the transmitter when the recognizer recognizes the change of the communication protocol to another.
摘要翻译：一种打印装置，包括用于从主计算机接收打印数据的接收器，用于向主计算机发送指示接收器完成打印数据的接收的接收处理完成信号的发送器，识别主计算机请求的识别装置将通信协议改变为另一个的接收机和发射机，以及用于当识别器识别到另一个通信协议的改变时，改变发射机发送的接收处理完成信号的定时的改变装置。

9. 发明授权

US5774356A Image forming apparatus with job priority management of output processing 失效
标题翻译：具有输出处理作业优先管理的图像形成装置
公开(公告)号：US5774356A
公开(公告)日：1998-06-30
申请号：US449100
申请日：1995-05-24
申请人： Masayuki Hisatake , Yoshihiko Nemoto
发明人： Masayuki Hisatake , Yoshihiko Nemoto
IPC分类号： G06F3/12 , H04N1/32 , G05B13/02
CPC分类号： H04N1/00915 , G06F3/1296 , H04N1/0092 , H04N1/32358 , H04N2201/0081 , H04N2201/0082 , H04N2201/0086 , H04N2201/3288
摘要： Image data is input through an image data input means, and stored into an image data storage means on a job basis. The volumes of the respective stored jobs are recognized by a job volume recognition means. A processing priority determination means determines an output processing priority order of the stored jobs based on the recognized job volumes. An interrupt can be generated for a priority job even during output processing of another job according to the output processing priority order.
摘要翻译：图像数据通过图像数据输入装置输入，并以作业为基础存储在图像数据存储装置中。相应的存储作业的卷被作业卷识别装置识别。处理优先级确定装置基于所识别的作业卷来确定所存储的作业的输出处理优先级顺序。即使在根据输出处理优先级顺序的另一作业的输出处理期间，也可以为优先级作业生成中断。

10. 发明授权

US07709932B2 Semiconductor wafer having a separation portion on a peripheral area 有权
标题翻译：半导体晶片在周边区域具有分离部分
公开(公告)号：US07709932B2
公开(公告)日：2010-05-04
申请号：US11245059
申请日：2005-10-07
申请人： Yoshihiko Nemoto , Masahiro Sunohara , Kenji Takahashi
发明人： Yoshihiko Nemoto , Masahiro Sunohara , Kenji Takahashi
IPC分类号： H01L29/06
CPC分类号： H01L21/6835 , H01L21/3043 , H01L21/6836 , H01L21/78 , H01L29/0657 , H01L2221/68327 , H01L2221/6834 , H01L2221/68363 , Y10S438/977
摘要： A conveyance system for a semiconductor wafer can be used without any change before and after a support plate is adhered to the wafer. Also, the finish accuracy of the wafer and the positioning accuracy between the wafer and the support plate can be relaxed, thus improving the manufacturing efficiency. The wafer is formed on its peripheral portion with a stepped portion, which is deeper than a finished thickness obtained by partial removal of the rear surface thereof and which can be eliminated by the partial removal of the wafer rear surface. The separation portion has a length which extends radially outward from a flat surface, and which is greater than a total sum of a maximum-minimum difference between the finish allowances of the diameters of the wafer and the support plate, and a maximum value of a positioning error between the wafer and the support plate generated upon adhesion thereof.
摘要翻译：在支撑板粘附到晶片之前和之后，可以不用改变地使用半导体晶片的输送系统。此外，晶片的精加工精度和晶片与支撑板之间的定位精度可以被放宽，从而提高制造效率。晶片在其周边部分上形成有阶梯部分，其比通过部分去除其后表面获得的成品厚度更深，并且可以通过部分去除晶片后表面而消除晶片。分离部分具有从平坦表面径向向外延伸的长度，并且其长度大于晶片和支撑板的直径的精加工余量之间的最大 - 最小差值的总和以及最大值在粘合时产生的晶片和支撑板之间的定位误差。

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