专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08901563B2 Organic light-emitting display device and method of manufacturing the same 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US08901563B2
公开(公告)日：2014-12-02
申请号：US13356923
申请日：2012-01-24
申请人： Sang-Il Park , Chaun-Gi Choi , Tae-Kyung Ahn
发明人： Sang-Il Park , Chaun-Gi Choi , Tae-Kyung Ahn
IPC分类号： H01L51/52 , H01L27/12 , H01L27/32
CPC分类号： H01L27/3262 , H01L27/1255 , H01L27/3248 , H01L27/3265 , H01L51/5212 , H01L2227/323
摘要： An organic light-emitting display device includes an organic light-emitting device, a thin film transistor (TFT) electrically connected to the organic light-emitting device, and a capacitor electrically connected to the organic light-emitting device, the capacitor including a first electrode layer and a second electrode layer opposite to each other, and a first insulating layer interposed as a single layer between the first electrode layer and the second electrode layer.
摘要翻译：有机发光显示装置包括有机发光装置，与有机发光装置电连接的薄膜晶体管（TFT）和电连接到有机发光装置的电容器，所述电容器包括第一电极层和彼此相对的第二电极层，以及在第一电极层和第二电极层之间作为单层插入的第一绝缘层。

2. 发明授权

US08575606B2 Back panel for flat panel display apparatus, flat panel display apparatus comprising the same, and method of manufacturing the back panel 有权
标题翻译：用于平板显示装置的后面板，包括该平板显示装置的平面显示装置以及后面板的制造方法
公开(公告)号：US08575606B2
公开(公告)日：2013-11-05
申请号：US13443457
申请日：2012-04-10
申请人： Sang-Il Park , Chaun-Gi Choi , Tae-Kyung Ahn
发明人： Sang-Il Park , Chaun-Gi Choi , Tae-Kyung Ahn
IPC分类号： H01L51/52
CPC分类号： H01L27/1288 , H01L27/1225 , H01L27/3248 , H01L27/3251
摘要： A back panel for a flat panel display apparatus includes: a pixel electrode disposed on a substrate; a first gate electrode layer of a thin-film transistor (TFT) disposed on the substrate; a second gate electrode layer disposed on the first gate electrode layer and including a semiconductor material; a third gate electrode layer disposed on the second gate electrode layer and including a metal material; a first insulating layer disposed on the third gate electrode layer; an active layer disposed on the first insulating layer and including a transparent conductive oxide semiconductor; a second insulating layer disposed on the active layer; source and drain electrodes disposed connected to the active layer through the second insulating layer; and a third insulating layer covering the source and drain electrodes. The first gate electrode layer and the pixel electrode include a transparent conductive oxide.
摘要翻译：一种用于平板显示装置的后面板包括：设置在基板上的像素电极; 设置在所述基板上的薄膜晶体管（TFT）的第一栅极电极层; 第二栅极电极层，设置在所述第一栅极电极层上并且包括半导体材料; 第三栅电极层，设置在所述第二栅电极层上并且包括金属材料; 设置在所述第三栅电极层上的第一绝缘层; 设置在所述第一绝缘层上并包括透明导电氧化物半导体的有源层; 设置在所述有源层上的第二绝缘层; 通过第二绝缘层连接到有源层的源极和漏极; 以及覆盖源极和漏极的第三绝缘层。第一栅电极层和像素电极包括透明导电氧化物。

3. 发明授权

US08633490B2 Organic electroluminescence display and manufacturing method thereof 有权
标题翻译：有机电致发光显示及其制造方法
公开(公告)号：US08633490B2
公开(公告)日：2014-01-21
申请号：US13443485
申请日：2012-04-10
申请人： Sang-Il Park , Tae-Kyung Ahn
发明人： Sang-Il Park , Tae-Kyung Ahn
IPC分类号： H01L51/52 , H01L51/56
CPC分类号： H01L27/1225 , H01L27/3248 , H01L27/3262 , H01L27/3265 , H01L27/3276 , H01L2227/323
摘要： An organic electroluminescence display including: a gate line disposed on a substrate; a data line crossing the gate line; a TFT connected to the gate and data lines; a capacitor connected to the TFT; and an OLED connected to the TFT. A gate electrode of the TFT and a lower electrode of the capacitor are patterned from a first layer. A gate insulating layer disposed on the gate electrode and an insulating island disposed on the gate line are patterned from a second layer. A semiconductor island disposed on the insulating island and an active layer disposed on the gate insulating layer are patterned from a third layer. An insulating layer is disposed on the TFTs, the capacitor, and between the semiconductor island and the data line. An upper electrode of the capacitor, source/drain electrodes of the TFT, and the data line are patterned from a fourth layer.
摘要翻译：一种有机电致发光显示器，包括：设置在基板上的栅极线; 跨越栅极线的数据线; 连接到门和数据线的TFT; 连接到TFT的电容器; 和连接到TFT的OLED。 TFT的栅电极和电容器的下电极从第一层图案化。设置在栅电极上的栅极绝缘层和设置在栅极线上的绝缘岛从第二层图案化。设置在绝缘岛上的半导体岛和设置在栅绝缘层上的有源层从第三层图案化。在TFT，电容器和半导体岛与数据线之间设置绝缘层。电容器的上电极，TFT的源/漏极和数据线从第四层图案化。

4. 发明授权

US08710503B2 Organic light-emitting display and method of manufacturing the same 有权
标题翻译：有机发光显示器及其制造方法
公开(公告)号：US08710503B2
公开(公告)日：2014-04-29
申请号：US12944619
申请日：2010-11-11
申请人： Tae-Kyung Ahn
发明人： Tae-Kyung Ahn
IPC分类号： H01L29/04
CPC分类号： H01L27/3258
摘要： An organic light emitting display (OLED) device is disclosed. The OLED device includes a thin-film transistor (TFT), which includes a gate electrode; an active layer insulated from the gate electrode; source and drain electrodes insulated from the gate electrode and contacting the active layer; and an insulation layer interposed between the source and drain electrodes and the active layer; and an organic light-emitting element electrically connected to the TFT, wherein the insulation layer includes a first insulation sub-layer contacting the active layer; and a second insulation sub-layer formed on the first insulation sub-layer.
摘要翻译：公开了一种有机发光显示（OLED）装置。 OLED器件包括薄膜晶体管（TFT），其包括栅电极; 与栅电极绝缘的有源层; 源极和漏极与栅电极绝缘并接触有源层; 以及插入在所述源电极和漏电极与所述有源层之间的绝缘层; 和与TFT连接的有机发光元件，其中所述绝缘层包括与所述有源层接触的第一绝缘子层; 以及形成在第一绝缘子层上的第二绝缘子层。

5. 发明授权

US09035313B2 Thin film transistor, method of manufacturing the same and flat panel display device having the same 有权
标题翻译：薄膜晶体管，其制造方法和具有该薄膜晶体管的平板显示装置
公开(公告)号：US09035313B2
公开(公告)日：2015-05-19
申请号：US13408825
申请日：2012-02-29
申请人： Jae-Kyeong Jeong , Jong-Han Jeong , Min-Kyu Kim , Tae-Kyung Ahn , Yeong-Gon Mo , Hui-Won Yang
发明人： Jae-Kyeong Jeong , Jong-Han Jeong , Min-Kyu Kim , Tae-Kyung Ahn , Yeong-Gon Mo , Hui-Won Yang
IPC分类号： H01L29/786 , H01L29/49
CPC分类号： H01L29/7869 , H01L29/4908 , H01L29/78696
摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.
摘要翻译：使用氧化物半导体作为有源层的薄膜晶体管（TFT），制造TFT的方法以及具有该TFT的平板显示装置包括形成在基板上的栅电极; 由氧化物半导体制成的有源层，并通过栅极绝缘层与栅电极绝缘; 源极和漏极耦合到有源层; 以及形成在活性层的一个或两个表面上的界面稳定层。在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持化学上高的界面稳定性。由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止了电荷俘获。

6. 发明申请

US20090321731A1 THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME 有权
标题翻译：薄膜晶体管，其制造方法和具有该薄膜晶体管的平板显示器件
公开(公告)号：US20090321731A1
公开(公告)日：2009-12-31
申请号：US12352851
申请日：2009-01-13
申请人： Jae-Kyeong JEONG , Jong-Han Jeong , Min-Kyu Kim , Tae-Kyung Ahn , Yeon-Gon Mo , Hui-Won Yang
发明人： Jae-Kyeong JEONG , Jong-Han Jeong , Min-Kyu Kim , Tae-Kyung Ahn , Yeon-Gon Mo , Hui-Won Yang
IPC分类号： H01L31/0256 , H01L29/12 , H01L21/02 , H01L31/00
CPC分类号： H01L29/7869 , H01L29/4908 , H01L29/78696
摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.
摘要翻译：使用氧化物半导体作为有源层的薄膜晶体管（TFT），制造TFT的方法以及具有该TFT的平板显示装置包括形成在基板上的栅电极; 由氧化物半导体制成的有源层，并通过栅极绝缘层与栅电极绝缘; 源极和漏极耦合到有源层; 以及形成在活性层的一个或两个表面上的界面稳定层。在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持化学上高的界面稳定性。由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止了电荷俘获。

7. 发明申请

US20090256147A1 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20090256147A1
公开(公告)日：2009-10-15
申请号：US12382341
申请日：2009-03-13
申请人： Min-Kyu Kim , Tae-Kyung Ahn , Jae-Kyeong Jeong
发明人： Min-Kyu Kim , Tae-Kyung Ahn , Jae-Kyeong Jeong
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869
摘要： A thin film transistor, including a transparent channel pattern, a transparent gate insulating layer in contact with the channel pattern, a passivation film pattern disposed on the channel pattern, a source/drain coupled to the channel pattern through a via hole in the passivation film pattern, and a gate facing the channel pattern, the gate insulating layer interposed between the gate and the channel pattern, wherein the passivation film pattern includes at least one of polyimide, photoacryl, and spin on glass (SOG).
摘要翻译：一种薄膜晶体管，包括透明沟道图案，与沟道图案接触的透明栅极绝缘层，设置在沟道图案上的钝化膜图案，通过钝化膜中的通孔耦合到沟道图案的源极/漏极图案和面对沟道图案的栅极，插入在栅极和沟道图案之间的栅极绝缘层，其中钝化膜图案包括聚酰亚胺，光致聚丙烯和旋转玻璃（SOG）中的至少一种。

8. 发明申请

US20070275497A1 Method of aligning a substrate, mask to be aligned with the same, and flat panel display apparatus using the same 有权
标题翻译：对准基板的方法，与其对准的掩模和使用其的平板显示装置
公开(公告)号：US20070275497A1
公开(公告)日：2007-11-29
申请号：US11802323
申请日：2007-05-22
申请人： Jin-Ho Kwack , Tae-Kyung Ahn , Min-Kyu Kim , Se-Yeoul Kwon
发明人： Jin-Ho Kwack , Tae-Kyung Ahn , Min-Kyu Kim , Se-Yeoul Kwon
IPC分类号： H01L21/00
CPC分类号： G03F7/70791 , G03F9/7076 , G03F9/708 , G03F9/7084 , G03F9/7088 , H01L21/682
摘要： A method of aligning a substrate includes forming a first alignment hole in the substrate, preparing a mask with a second alignment hole narrower than the first alignment hole, modifying a surface reflectance around either the first alignment hole or the second alignment hole to form a treatment region, positioning the mask below the substrate, such that the first and second alignment holes overlap, and operating a sensor unit above the first alignment hole to examine alignment of the first and second alignment holes.
摘要翻译：对准衬底的方法包括在衬底中形成第一对准孔，制备具有比第一对准孔窄的第二对准孔的掩模，修改围绕第一对准孔或第二对准孔的表面反射，以形成处理区域，将掩模定位在基板下方，使得第一和第二对准孔重叠，并且在第一对准孔上方操作传感器单元，以检查第一和第二对准孔的对准。

9. 发明申请

US20110042666A1 Organic light emitting display device 有权
标题翻译：有机发光显示装置
公开(公告)号：US20110042666A1
公开(公告)日：2011-02-24
申请号：US12801201
申请日：2010-05-27
申请人： Hui-Won Yang , Yeon-Gon Mo , Jin-Seong Park , Min-Kyu Kim , Tae-Kyung Ahn , Hyun-Joong Chung
发明人： Hui-Won Yang , Yeon-Gon Mo , Jin-Seong Park , Min-Kyu Kim , Tae-Kyung Ahn , Hyun-Joong Chung
IPC分类号： H01L33/28
CPC分类号： H01L27/124 , H01L27/1225 , H01L27/3262 , H01L27/3276
摘要： An organic light emitting display device including a plurality of scan lines arranged in a first direction, a plurality of data lines arranged in a second direction, the plurality of data lines intersecting with the plurality of scan lines, and pixels respectively disposed at intersection portions of the scan and data lines, each pixel including at least one thin film transistor (TFT) and an organic light emitting diode, wherein the TFT is an oxide TFT, the oxide TFT including a first oxide semiconductor layer as an active layer, and a second oxide semiconductor layer is disposed between intersecting scan and data lines.
摘要翻译：一种有机发光显示装置，包括沿第一方向布置的多条扫描线，沿第二方向布置的多条数据线，与多条扫描线相交的多条数据线，以及分别设置在多条扫描线的交点处的像素所述扫描和数据线，每个像素包括至少一个薄膜晶体管（TFT）和有机发光二极管，其中所述TFT是氧化物TFT，所述氧化物TFT包括作为有源层的第一氧化物半导体层，以及第二氧化物半导体层设置在相交的扫描线和数据线之间。

10. 发明申请

US20100026169A1 Thin film transistor, method of manufacturing the same and flat panel display device having the same 失效
标题翻译：薄膜晶体管，其制造方法和具有该薄膜晶体管的平板显示装置
公开(公告)号：US20100026169A1
公开(公告)日：2010-02-04
申请号：US12382743
申请日：2009-03-23
申请人： Jong-Han Jeong , Tae-Kyung Ahn , Jae-Kyeong Jeong , Jin-Sung Park , Hun-Jung Lee , Hyun-Soo Shin , Yeon-Gon Mo
发明人： Jong-Han Jeong , Tae-Kyung Ahn , Jae-Kyeong Jeong , Jin-Sung Park , Hun-Jung Lee , Hyun-Soo Shin , Yeon-Gon Mo
IPC分类号： H01J1/62 , H01L29/10 , H01L21/16 , H01L29/08
CPC分类号： H01L29/78696 , H01L27/1225 , H01L29/7869
摘要： Disclosed is a thin film transistor which has an oxide semiconductor as an activation layer, a method of manufacturing the same and a flat panel display device having the same. The thin film transistor includes an oxide semiconductor layer formed on a substrate and including a channel region, a source region and a drain region, a gate electrode insulated from the oxide semiconductor layer by a gate insulating film, and source electrode and drain electrode which are coupled to the source region and the drain region, respectively. The oxide semiconductor layer includes a first layer portion and a second layer portion. The first layer portion has a first thickness and a first carrier concentration, and the second layer portion has a second thickness and a second carrier concentration. The second carrier concentration is lower than the first carrier concentration.
摘要翻译：公开了具有氧化物半导体作为活化层的薄膜晶体管，其制造方法和具有该活性层的平板显示装置。薄膜晶体管包括形成在基板上的氧化物半导体层，其包括沟道区域，源极区域和漏极区域，通过栅极绝缘膜与氧化物半导体层绝缘的栅极电极以及源极电极和漏极电极耦合到源区和漏区。氧化物半导体层包括第一层部分和第二层部分。第一层部分具有第一厚度和第一载流子浓度，并且第二层部分具有第二厚度和第二载流子浓度。第二载流子浓度低于第一载流子浓度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式