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1. 发明申请

US20150311189A1 LOW NOISE AND HIGH PERFORMANCE LSI DEVICE 审中-公开
标题翻译：低噪声和高性能LSI器件
公开(公告)号：US20150311189A1
公开(公告)日：2015-10-29
申请号：US14791770
申请日：2015-07-06
申请人： Samsung Electronics Co., Ltd.
发明人： Shigenobu Maeda , Jeong-Hwan Yang
IPC分类号： H01L27/02 , H01L27/092 , H01L29/78
CPC分类号： H01L27/0922 , H01L21/823412 , H01L21/823418 , H01L21/823807 , H01L21/823814 , H01L27/0207 , H01L27/092 , H01L27/1052 , H01L29/0649 , H01L29/665 , H01L29/7833 , H01L29/7842 , H01L29/7843 , H01L29/7845 , H01L29/7848
摘要： In semiconductor devices in which both NMOS devices and PMOS devices are used to perform in different modes such as analog and digital modes, stress engineering is selectively applied to particular devices depending on their required operational modes. That is, the appropriate mechanical stress, i.e., tensile or compressive, can be applied to and/or removed from devices, i.e., NMOS and/or PMOS devices, based not only on their conductivity type, i.e., n-type or p-type, but also on their intended operational application, for example, analog/digital, low-voltage/high-voltage, high-speed/low-speed, noise-sensitive/noise-insensitive, etc. The result is that performance of individual devices is optimized based on the mode in which they operate. For example, mechanical stress can be applied to devices that operate in high-speed digital settings, while devices that operate in analog or RF signal settings, in which electrical noise such as flicker noise that may be introduced by applied stress may degrade performance, have no stress applied.
摘要翻译：在其中使用NMOS器件和PMOS器件的半导体器件中，以不同的模式（例如模拟和数字模式）来执行应力工程，根据所需的操作模式，对特定器件有选择地施加应力工程。也就是说，适当的机械应力，即拉伸或压缩，可以施加到和/或从设备（即，NMOS和/或PMOS器件）中去除和/或从器件去除，不仅基于它们的导电类型，即n型或p- 类型，而且还在于其预期的操作应用，例如模拟/数字，低电压/高电压，高速/低速，噪声敏感/噪声不敏感等。结果是个体的性能设备根据其运行模式进行优化。例如，机械应力可以应用于在高速数字设置中工作的设备，而在模拟或RF信号设置中工作的设备，其中可能由施加的应力引入的诸如闪烁噪声的电噪声可能降低性能，具有没有施加应力。

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