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1. 发明公开

US20240290677A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20240290677A1
公开(公告)日：2024-08-29
申请号：US18459111
申请日：2023-08-31
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Gyuseong PARK , Joongwon SHIN , Jong-Min LEE , Jimin CHOI
IPC分类号： H01L23/31 , H01L21/56 , H01L21/768 , H01L23/00 , H01L23/532
CPC分类号： H01L23/3157 , H01L21/56 , H01L21/76801 , H01L23/3192 , H01L23/53295 , H01L24/13 , H01L23/291 , H01L24/05 , H01L2224/05567 , H01L2224/05571 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/05669 , H01L2224/05676 , H01L2224/05681 , H01L2224/05684 , H01L2224/05686 , H01L2224/13021 , H01L2224/13082 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13166 , H01L2224/13169 , H01L2224/13176 , H01L2224/13181 , H01L2224/13184 , H01L2224/13186 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/0496
摘要： A semiconductor device includes an interlayer insulating layer, a first protective insulating layer on the interlayer insulating layer, a second protective insulating layer on the first protective insulating layer, and insulating structures disposed in at least one of the first protective insulating layer or the second protective insulating layer, wherein the insulating structures include a first insulating structure including a first material having a first physical property, and a second insulating structure including a second material having a second physical property, and the first material and the second material include a same material, and the first physical property and the second physical property are different physical properties.

2. 发明申请

US20230076238A1 SEMICONDUCTOR CHIP WITH STEPPED SIDEWALL, SEMICONDUCTOR PACKAGE INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME 有权
公开(公告)号：US20230076238A1
公开(公告)日：2023-03-09
申请号：US17882748
申请日：2022-08-08
申请人： Samsung Electronics Co., Ltd.
发明人： Junhyung KIM , Jong-Min LEE , Minjung CHOI , Jimin CHOI
IPC分类号： H01L23/528 , H01L23/00 , H01L21/822 , H01L25/065 , H01L21/66
摘要： Semiconductor chips, semiconductor packages, and semiconductor chip fabrication methods may be provided. The semiconductor chip includes a substrate including a device region and an edge region, a device layer and a wiring layer sequentially stacked on the substrate, a sub-pad on the device region and a residual test pattern on the edge region wherein a sidewall of the residual test pattern is aligned with a sidewall of the substrate, and an upper dielectric stack covering the sub-pad and the residual test pattern. The upper dielectric stack may expose a portion of a top surface of the residual test pattern. A sidewall of the upper dielectric stack may have a stepped region.

3. 发明申请

US20150380421A1 SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME 审中-公开
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20150380421A1
公开(公告)日：2015-12-31
申请号：US14848423
申请日：2015-09-09
申请人： Samsung Electronics Co., Ltd.
发明人： Jae-Hwang SIM , Jinhyun SHIN , Jong-Min LEE
IPC分类号： H01L27/115 , H01L21/764
CPC分类号： H01L27/11524 , H01L21/764 , H01L29/42324
摘要： Provided are a semiconductor memory device and a method of fabricating the same. the semiconductor memory device may include a semiconductor substrate with a first trench defining active regions in a first region and a second trench provided in a second region around the first region, a gate electrode provided on the first region to cross the active regions, a charge storing pattern disposed between the gate electrode and the active regions, a blocking insulating layer provided between the gate electrode and the charge storing pattern and extending over the first trench to define a first air gap in the first trench, and an insulating pattern provided spaced apart from a bottom surface of the second trench to define a second air gap in the second trench.
摘要翻译：提供一种半导体存储器件及其制造方法。半导体存储器件可以包括半导体衬底，其具有限定第一区域中的有源区域的第一沟槽和设置在第一区域周围的第二区域中的第二沟槽，设置在第一区域上的栅电极以跨越有源区域，存储图案，设置在所述栅电极和所述有源区之间，阻挡绝缘层，设置在所述栅电极和所述电荷存储图案之间并在所述第一沟槽上延伸以限定所述第一沟槽中的第一气隙，以及间隔开的绝缘图案从第二沟槽的底表面到第二沟槽中限定第二气隙。

4. 发明申请

US20230114139A1 SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME 有权
公开(公告)号：US20230114139A1
公开(公告)日：2023-04-13
申请号：US17900172
申请日：2022-08-31
申请人： Samsung Electronics Co., Ltd.
发明人： Yong-Hoon SON , Joon Sung KIM , Suk Kang SUNG , Gil Sung LEE , Jong-Min LEE
IPC分类号： H01L27/11582 , H01L23/535 , H01L27/11573
摘要： A semiconductor memory device may include a cell substrate including a cell array region and an extension region, a first mold structure on the cell substrate, a second mold structure on the first mold structure, a channel structure passing through the first and second mold structures on the cell array region, and a cell contact structure passing through the first and second mold structures on the extension region. The first mold structure and the second mold structure respectively include first gate electrodes and second gate electrodes sequentially stacked on the cell array region and stacked in a stepwise manner on the extension region. The cell contact structure includes a lower conductive pattern connected to one of the first gate electrodes, an upper conductive pattern connected to one of the second gate electrodes, and an insulating pattern separating the lower conductive pattern from the upper conductive pattern.

5. 发明申请

US20230030117A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20230030117A1
公开(公告)日：2023-02-02
申请号：US17714202
申请日：2022-04-06
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Juik LEE , Jong-Min LEE , Jimin CHOI , Yeonjin LEE , Jeon Il LEE
IPC分类号： H01L23/48 , H01L23/522 , H01L23/528 , H01L25/065 , H01L23/00 , H01L25/10
摘要： A semiconductor device includes a substrate including a first side and a second side opposite to each other, a first penetrating structure that penetrates the substrate, and a second penetrating structure that penetrates the substrate, the second penetrating structure being spaced apart from the first penetrating structure, and an area of the first penetrating structure being more than twice an area of the second penetrating structure, as viewed from the first side of the substrate.

6. 发明申请

US20190043889A1 VERTICAL MEMORY DEVICES 审中-公开
公开(公告)号：US20190043889A1
公开(公告)日：2019-02-07
申请号：US16157684
申请日：2018-10-11
申请人： Samsung Electronics Co., Ltd.
发明人： Joo-Hee PARK , Jong-Min LEE , Seon-Kyung KIM , Kee-Jeong RHO , Jin-hyun SHIN , Jong-Hyun PARK , Jin-Yeon WON
IPC分类号： H01L27/11582 , H01L27/1157 , H01L27/11565
CPC分类号： H01L27/11582 , H01L27/11565 , H01L27/1157
摘要： A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a first direction that vertical to a top surface of the substrate, a plurality of gate lines and a conductive line on the substrate. The gate lines are stacked on top of each other. The gate lines surround the channels. The gate lines are spaced apart from each other along the first direction. The conductive line cuts the gate lines along the first direction. A width of the conductive line is periodically and repeatedly changed.

7. 发明申请

US20200098854A1 CAPACITOR STRUCTURES, DECOUPLING STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME 审中-公开
公开(公告)号：US20200098854A1
公开(公告)日：2020-03-26
申请号：US16697484
申请日：2019-11-27
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Jong-Min LEE , Jongryul JUN , Eun A. KIM , Jung-Bum LIM
IPC分类号： H01L49/02 , H01L27/108 , H01L27/08
摘要： Decoupling structures are provided. The decoupling structures may include first conductive patterns, second conductive patterns and a unitary supporting structure that structurally supports the first conductive patterns and the second conductive patterns. The decoupling structures may also include a common electrode disposed between ones of the first conductive patterns and between ones of the second conductive patterns. The first conductive patterns and the common electrode are electrodes of a first capacitor, and the second conductive patterns and the common electrode are electrodes of a second capacitor. The unitary supporting structure may include openings when viewed from a plan perspective. The first conductive patterns and the second conductive patterns are horizontally spaced apart from each other with a separation region therebetween, and none of the openings extend into the separation region.

8. 发明申请

US20190190622A1 WIRELESS COMMUNICATION APPARATUSES PERFORMING SELECTIVE NOISE FILTERING AND METHODS OF OPERATING THE SAME 审中-公开
公开(公告)号：US20190190622A1
公开(公告)日：2019-06-20
申请号：US16222217
申请日：2018-12-17
申请人： Samsung Electronics Co., Ltd.
发明人： Hae-chul LEE , Seong-ho KIM , Sung-won PARK , Uk-hyeon SHIN , Sang-un OH , Seung-yup LEE , Jong-Min LEE , Jung-su HAN
IPC分类号： H04B15/00
CPC分类号： H04B15/00
摘要： A method performed by at least one processor of a wireless communication apparatus including a plurality of internal components, the method includes generating a plurality of sets of noise information corresponding to a plurality of test noise signals generated by the plurality of internal components under a plurality of state conditions, receiving a radio frequency (RF) signal, determining a magnitude of a noise signal that interferes with the RF signal by using a set of noise information corresponding to a current state condition from among the plurality of sets of noise information, and performing noise filtering on the RF signal based on a magnitude of the RF signal and the magnitude of the noise signal.

9. 发明申请

US20190172904A1 CAPACITOR STRUCTURES, DECOUPLING STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME 审中-公开
公开(公告)号：US20190172904A1
公开(公告)日：2019-06-06
申请号：US16268185
申请日：2019-02-05
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Jong-Min LEE , Jongryul JUN , Eun A KIM , Jung-Bum LIM
IPC分类号： H01L49/02 , H01L27/08 , H01L27/108
摘要： Decoupling structures are provided. The decoupling structures may include first conductive patterns, second conductive patterns and a unitary supporting structure that structurally supports the first conductive patterns and the second conductive patterns. The decoupling structures may also include a common electrode disposed between ones of the first conductive patterns and between ones of the second conductive patterns. The first conductive patterns and the common electrode are electrodes of a first capacitor, and the second conductive patterns and the common electrode are electrodes of a second capacitor. The unitary supporting structure may include openings when viewed from a plan perspective. The first conductive patterns and the second conductive patterns are horizontally spaced apart from each other with a separation region therebetween, and none of the openings extend into the separation region.

10. 发明申请

US20170155746A1 ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20170155746A1
公开(公告)日：2017-06-01
申请号：US15287900
申请日：2016-10-07
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Hae-Jung YANG , Seung-Joo LEE , Kwang-Eun GO , Kang-Sik KIM , Jae-Hoon WOO , Jong-Min LEE
IPC分类号： H04M1/02 , H05K9/00 , H05K7/20
CPC分类号： H04M1/026 , G06F1/1637 , G06F1/203 , H04M1/0266 , H04M1/0277 , H04M1/0279 , H05K7/20509 , H05K9/0007
摘要： A method for manufacturing an electronic device, according to the present disclosure, may include: detecting positions of one or more heat sources, which are disposed in a printed circuit board or in a display of the electronic device, or a path of the heat that is diffused from the heat sources; selecting a heat radiating structure to correspond to the positions of the heat sources or the diffusion path; selecting an adiabatic member or a heat radiating member, which is disposed based the selected heat radiating structure to block or radiate the heat transferred from the heat source; and forming the selected heat radiating structure or disposing the selected adiabatic member or heat radiating member on the periphery of the heat source or on the diffusion path. According to various embodiments of the disclosure, the heat radiation improvement can be maximized and/or improved by improving the structure of a heat radiation path of the electronic device and by selecting and disposing heat radiating members in appropriate positions.

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