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1. 再颁专利

USRE35313E Semiconductor integrated circuit with voltage limiter having different output ranges from normal operation and performing of aging tests 失效
公开(公告)号：USRE35313E
公开(公告)日：1996-08-13
申请号：US875088
申请日：1992-04-28
申请人： Ryoichi Hori , Kiyoo Itoh , Hitoshi Tanaka
发明人： Ryoichi Hori , Kiyoo Itoh , Hitoshi Tanaka
IPC分类号： G01R31/30 , G05F1/46 , G11C5/14 , H01L27/02 , G01R31/10 , G01R31/3173 , H02M3/158
CPC分类号： H01L27/0218 , G01R31/30 , G05F1/465 , G11C5/145 , G11C5/147
摘要： In a voltage converter which is disposed in a semiconductor integrated circuit so as to lower an external supply voltage and to feed the lowered voltage to a partial circuit of the integrated circuit, the voltage converter is constructed so as to produce an output voltage suited to an ordinary operation in the ordinary operation state of the semiconductor integrated circuit and an aging voltage in the aging test of the circuit.

2. 发明授权

US5528548A Voltage converter of semiconductor device 失效
标题翻译：半导体器件的电压转换器
公开(公告)号：US5528548A
公开(公告)日：1996-06-18
申请号：US384962
申请日：1995-02-07
申请人： Masashi Horiguchi , Ryoichi Hori , Kiyoo Itoh , Yoshinobu Nakagome , Masakazu Aoki , Hitoshi Tanaka
发明人： Masashi Horiguchi , Ryoichi Hori , Kiyoo Itoh , Yoshinobu Nakagome , Masakazu Aoki , Hitoshi Tanaka
IPC分类号： G05F1/46 , H03K17/693 , G11C7/00
CPC分类号： H03K17/693 , G05F1/465
摘要： A semiconductor memory is provided which includes a voltage converter supplying an internal supply voltage in proportion to the greater one of two reference voltages to a circuit in the semiconductor memory. The voltage converter includes a circuit which is provided for generating a first voltage whose dependency on an external supply voltage is regulated to a predetermined small value, while another circuit is provided for generating a second voltage whose dependency on the external supplying voltage is larger than the dependency of the first voltage. The voltage converter includes MOS transistors and differential amplifiers interconnected with one another, as well as a voltage dividing circuit. The memory also includes a word line booster for boosting the internal supply voltage.
摘要翻译：提供一种半导体存储器，其包括电压转换器，其向半导体存储器中的电路提供与两个参考电压中的较大一个成比例的内部电源电压。电压转换器包括电路，用于产生对外部电源电压的依赖性被调节到预定的小值的第一电压，而另一电路用于产生对外部供电电压的依赖性大于第一电压的依赖性。电压转换器包括彼此互连的MOS晶体管和差分放大器，以及分压电路。该存储器还包括用于升高内部电源电压的字线升压器。

3. 发明授权

US4916389A Semiconductor integrated circuit with voltage limiter having different output ranges from normal operation and performing of aging tests 失效
标题翻译：具有不同输出范围的限压器的半导体集成电路与正常运行和老化测试的执行
公开(公告)号：US4916389A
公开(公告)日：1990-04-10
申请号：US140628
申请日：1988-01-04
申请人： Ryoichi Hori , Kiyoo Itoh , Hitoshi Tanaka
发明人： Ryoichi Hori , Kiyoo Itoh , Hitoshi Tanaka
IPC分类号： H01L27/04 , G01R31/30 , G05F1/46 , G05F3/24 , G11C5/14 , G11C11/407 , H01L21/822 , H01L27/02 , H01L27/06
CPC分类号： G01R31/30 , G05F1/465 , G11C5/145 , G11C5/147 , H01L27/0218
摘要： In a voltage converter which is disposed in a semiconductor integrated circuit so as to lower an external supply voltage and to feed the lowered voltage to a partial circuit of the integrated circuit, the voltage converter is constructed so as to produce an output voltage suited to an ordinary operation in the ordinary operation state of the semiconductor integrated circuit and an aging voltage in the aging test of the circuit.
摘要翻译：在设置在半导体集成电路中以降低外部电源电压并将降低的电压馈送到集成电路的部分电路的电压转换器中，电压转换器被构造成产生适合于通常在半导体集成电路的正常工作状态下工作，并在老化电路中进行老化测试。

4. 发明授权

US5712859A Semiconductor integrated circuit 失效
公开(公告)号：US5712859A
公开(公告)日：1998-01-27
申请号：US707316
申请日：1996-09-03
申请人： Ryoichi Hori , Kiyoo Itoh , Hitoshi Tanaka
发明人： Ryoichi Hori , Kiyoo Itoh , Hitoshi Tanaka
IPC分类号： G01R31/30 , G05F1/46 , G11C5/14 , G11C29/50 , H01L27/02 , G01R31/317
CPC分类号： G11C29/50 , G01R31/30 , G05F1/465 , G11C5/145 , G11C5/147 , H01L27/0218
摘要： In a voltage converter which is disposed in a semiconductor integrated circuit so as to lower an external supply voltage and to feed the lowered voltage to a partial circuit of the integrated circuit; the voltage converter is constructed so as to produce an output voltage suited to an ordinary operation in the ordinary operation state of the semiconductor integrated circuit and an aging voltage in the aging test of the circuit.

5. 发明授权

US5272393A Voltage converter of semiconductor device 失效
标题翻译：半导体器件的电压转换器
公开(公告)号：US5272393A
公开(公告)日：1993-12-21
申请号：US790065
申请日：1991-11-12
申请人： Masashi Horiguchi , Ryoichi Hori , Kiyoo Itoh , Yoshinobu Nakagome , Masakazu Aoki , Hitoshi Tanaka
发明人： Masashi Horiguchi , Ryoichi Hori , Kiyoo Itoh , Yoshinobu Nakagome , Masakazu Aoki , Hitoshi Tanaka
IPC分类号： G05F1/46 , H03K17/693 , H03K3/01 , H03K5/22
CPC分类号： H03K17/693 , G05F1/465
摘要： In a voltage converter provided in a semiconductor device and supplying an internal supply voltage to a circuit in the semiconductor device, a circuit is provided for generating a first voltage whose dependency on an external supply voltage is regulated to a predetermined small value, while another circuit is provided for generating a second voltage whose dependency on the external supplying voltage is larger than the dependency of the first voltage. Another circuit selects the first voltage when the semiconductor device is in a state of a standard operation and selects the second voltage when the device is in another state of operation, such as testing or aging. The selected voltage may be converted by a differential amplifier which is constituted by a load of P-channel MOS transistors and a source-coupled pair of N-channel MOS transistors. An output of the differential amplifier is fed back through a directly coupled voltage lowering circuit which generates the converted output.
摘要翻译：在设置在半导体器件中的电压转换器中并向半导体器件中的电路提供内部电源电压的电路，用于产生对外部电源电压的依赖性被调节到预定的小值的第一电压，而另一个电路被提供用于产生对外部供电电压的依赖性大于第一电压的依赖性的第二电压。当半导体器件处于标准操作状态时，另一个电路选择第一电压，并且当器件处于另一种操作状态（例如测试或老化）时选择第二电压。所选择的电压可以由由P沟道MOS晶体管的负载和源极耦合的N沟道MOS晶体管对构成的差分放大器来转换。差分放大器的输出通过直接耦合的降压电路反馈，该电路产生转换的输出。

6. 发明授权

US4930112A Semiconductor device having a voltage limiter 失效
标题翻译：具有限压器的半导体器件
公开(公告)号：US4930112A
公开(公告)日：1990-05-29
申请号：US934546
申请日：1986-11-24
申请人： Hitoshi Tanaka , Ryoichi Hori , Kiyoo Itoh , Katsutaka Kimura , Katsuhiro Shimohigashi
发明人： Hitoshi Tanaka , Ryoichi Hori , Kiyoo Itoh , Katsutaka Kimura , Katsuhiro Shimohigashi
IPC分类号： G11C11/407 , G05F1/46 , G11C11/401 , G11C11/4074 , G11C11/409
CPC分类号： G05F1/465 , G11C11/4074
摘要： A semiconductor device comprising a plurality of circuits driven by at least one external power source, and at least one voltage converter transforming the voltage of the external power source into another voltage. At least a part of the plurality of circuits are driven by the output voltage of the at least one voltage converter, which is provided with a controller for controlling its load driving power, corresponding to the operation of the part of the plurality of circuits. The voltage converter includes a voltage limiter which is used exclusively for each of the different natures of the loads, and its operation and load driving power are controlled, depending on the operations of each of the loads.
摘要翻译：一种半导体器件，包括由至少一个外部电源驱动的多个电路和至少一个将外部电源的电压转换成另一电压的电压转换器。所述多个电路的至少一部分由所述至少一个电压转换器的输出电压驱动，所述至少一个电压转换器的输出电压与所述多个电路的所述部分的操作相对应地设置有用于控制其负载驱动功率的控制器。电压转换器包括专用于负载的不同性质的电压限制器，并且根据每个负载的操作来控制其操作和负载驱动功率。

7. 发明授权

US5566185A Semiconductor integrated circuit 失效
标题翻译：半导体集成电路
公开(公告)号：US5566185A
公开(公告)日：1996-10-15
申请号：US371973
申请日：1995-01-12
申请人： Ryoichi Hori , Kiyoo Itoh , Hitoshi Tanaka
发明人： Ryoichi Hori , Kiyoo Itoh , Hitoshi Tanaka
IPC分类号： G01R31/30 , G05F1/46 , G11C5/14 , G11C29/50 , H01L27/02 , G01R31/3173
CPC分类号： G11C29/50 , G01R31/30 , G05F1/465 , G11C5/145 , G11C5/147 , H01L27/0218
摘要： In a voltage converter which is disposed in a semiconductor integrated circuit so as to lower an external supply voltage and to feed the lowered voltage to a partial circuit of the integrated circuit; the voltage converter is constructed so as to produce an output voltage suited to an ordinary operation in the ordinary operation state of the semiconductor integrated circuit and an aging voltage in the aging test of the circuit.
摘要翻译：在电压转换器中，该电压转换器设置在半导体集成电路中以降低外部电源电压并将降低的电压馈送到集成电路的部分电路; 电压转换器被构造成在半导体集成电路的普通操作状态下产生适合于普通操作的输出电压和电路的老化测试中的老化电压。

8. 发明授权

US5493572A Semiconductor integrated circuit with voltage limiter having different output ranges for normal operation and performing of aging tests 失效
标题翻译：具有电压限制器的半导体集成电路具有不同的输出范围，用于正常运行和执行老化测试
公开(公告)号：US5493572A
公开(公告)日：1996-02-20
申请号：US869851
申请日：1992-04-16
申请人： Ryoichi Hori , Kiyoo Itoh , Hitoshi Tanaka
发明人： Ryoichi Hori , Kiyoo Itoh , Hitoshi Tanaka
IPC分类号： G01R31/30 , G05F1/46 , G11C5/14 , H01L27/02 , G01R31/317
CPC分类号： G05F1/465 , G01R31/30 , G11C5/145 , G11C5/147 , H01L27/0218
摘要： In a voltage converter which is disposed in a semiconductor integrated circuit so as to lower an external supply voltage and to feed the lowered voltage to a partial circuit of the integrated circuit; the voltage converter is constructed so as to produce an output voltage suited to an ordinary operation in the ordinary operation state of the semiconductor integrated circuit and an aging voltage in the aging test of the circuit.
摘要翻译：在电压转换器中，该电压转换器设置在半导体集成电路中以降低外部电源电压并将降低的电压馈送到集成电路的部分电路; 电压转换器被构造成在半导体集成电路的普通操作状态下产生适合于普通操作的输出电压和电路的老化测试中的老化电压。

9. 发明授权

US5402375A Voltage converter arrangement for a semiconductor memory 失效
标题翻译：用于半导体存储器的电压转换器装置
公开(公告)号：US5402375A
公开(公告)日：1995-03-28
申请号：US207679
申请日：1994-03-09
申请人： Masashi Horiguchi , Ryoichi Hori , Kiyoo Itoh , Yoshinobu Nakagome , Masakazu Aoki , Hitoshi Tanaka
发明人： Masashi Horiguchi , Ryoichi Hori , Kiyoo Itoh , Yoshinobu Nakagome , Masakazu Aoki , Hitoshi Tanaka
IPC分类号： G05F1/46 , H03K17/693 , G11C7/00
CPC分类号： H03K17/693 , G05F1/465
摘要： In a voltage converter provided in a semiconductor memory and supplying an internal supply voltage to a circuit in the semiconductor memory, a circuit is provided for generating a first voltage whose dependency on an external supply voltage is regulated to a predetermined small value, while another circuit is provided for generating a second voltage whose dependency on the external supplying voltage is larger than the dependency of the first voltage. The voltage converter includes MOS transistors and differential amplifiers interconnected with one another, as well as voltage dividing means. The memory also includes a word line booster for boosting the internal supply voltage.
摘要翻译：在设置在半导体存储器中的电压转换器中并向半导体存储器中的电路提供内部电源电压的电路，用于产生对外部电源电压的依赖性被调节到预定的小值的第一电压，而另一个电路被提供用于产生对外部供电电压的依赖性大于第一电压的依赖性的第二电压。电压转换器包括彼此互连的MOS晶体管和差分放大器，以及分压装置。该存储器还包括用于升高内部电源电压的字线升压器。

10. 发明申请

US20050219935A1 Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions 失效
公开(公告)号：US20050219935A1
公开(公告)日：2005-10-06
申请号：US11133232
申请日：2005-05-20
申请人： Takao Watanabe , Ryoichi Hori , Goro Kitsukawa , Yoshiki Kawajiri , Takayuki Kawahara , Kiyoo Itoh
发明人： Takao Watanabe , Ryoichi Hori , Goro Kitsukawa , Yoshiki Kawajiri , Takayuki Kawahara , Kiyoo Itoh
IPC分类号： G11C5/14 , G11C7/00 , G11C7/12 , G11C8/00 , G11C8/10 , G11C11/4094 , H03K5/08 , H03K17/00 , H03K17/693 , H03K19/003 , H03K19/017 , H03K19/0175 , H03K19/0944
CPC分类号： G11C7/12 , G11C5/14 , G11C5/147 , G11C8/10 , G11C11/4094 , G11C11/413 , H03K5/08 , H03K17/693 , H03K19/00376 , H03K19/00384 , H03K19/017 , H03K19/01707 , H03K19/017518 , H03K19/09448 , H03K2217/0036
摘要： A semiconductor integrated circuit comprises a semiconductor chip, a power supply terminal provided on the semiconductor chip for receiving a voltage from an external power supply source, an internal circuit provided on the semiconductor chip, a power supply circuit provided on the semiconductor chip for transforming an external power supply voltage received from the power supply terminal for supplying a source voltage resulting from the voltage transformation to the internal circuit, and a control circuit provided on the semiconductor chip for controlling the power supply circuit, wherein the control circuit includes external power supply voltage detecting means and/or temperature detecting means and responds to the signal from the external power supply voltage detecting means and/or the temperature detecting means by changing the power supply voltage to the internal circuit to thereby maintain the operating speed of the internal circuit to be constant.

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