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    • 1. 发明授权
    • Thin film resistor having improved power handling capability
    • 薄膜电阻具有改善的功率处理能力
    • US09406741B2
    • 2016-08-02
    • US13308071
    • 2011-11-30
    • Peter J. Zampardi, Jr.Kai Hay Kwok
    • Peter J. Zampardi, Jr.Kai Hay Kwok
    • H01P1/22H01L49/02H01C1/012H01C1/14H01C1/16H01L27/01
    • H01C1/16H01C1/012H01C1/14H01C7/006H01L27/016H01L28/20H01P1/227
    • Designs and methodologies related to attenuators having a thin-film resistor assembly are disclosed. In some embodiments, the thin-film assembly can include a first and second thin-film resistor, each having a main portion with an input end and an output end. The input end of the first thin-film resistor is interconnected to the input end of the second thin-film resistors, and the output end of the first thin-film resistor is interconnected to the output end of the second thin-film resistor. The first and second thin-film resistors are disposed relative to one another so as to define a separation. The separation region reduces the likelihood of hot spot regions forming at or near the center of the thin-film structure and improves power handling capability for a given resistor width. Also disclosed are examples of how the foregoing features can be implemented in different products and methods of fabrication.
    • 公开了与具有薄膜电阻器组件的衰减器相关的设计和方法。 在一些实施例中,薄膜组件可以包括第一和第二薄膜电阻器,每个薄膜电阻器具有主要部分,其具有输入端和输出端。 第一薄膜电阻器的输入端与第二薄膜电阻器的输入端互连,第一薄膜电阻器的输出端与第二薄膜电阻器的输出端互连。 第一和第二薄膜电阻器相对于彼此设置以限定分离。 分离区域降低了在薄膜结构的中心处或附近形成热点区域的可能性,并且改善给定电阻器宽度的功率处理能力。 还公开了如何在不同的产品和制造方法中实现前述特征的示例。
    • 2. 发明申请
    • THIN FILM RESISTOR HAVING IMPROVED POWER HANDLING CAPABILITY
    • 具有改进的功率处理能力的薄膜电阻器
    • US20120171967A1
    • 2012-07-05
    • US13308071
    • 2011-11-30
    • Peter J. Zampardi, JR.Kai Hay Kwok
    • Peter J. Zampardi, JR.Kai Hay Kwok
    • H04B1/38H01L21/02H01C1/012
    • H01C1/16H01C1/012H01C1/14H01C7/006H01L27/016H01L28/20H01P1/227
    • Designs and methodologies related to attenuators having a thin-film resistor assembly are disclosed. In some embodiments, the thin-film assembly can include a first and second thin-film resistor, each having a main portion with an input end and an output end. The input end of the first thin-film resistor is interconnected to the input end of the second thin-film resistors, and the output end of the first thin-film resistor is interconnected to the output end of the second thin-film resistor. The first and second thin-film resistors are disposed relative to one another so as to define a separation. The separation region reduces the likelihood of hot spot regions forming at or near the center of the thin-film structure and improves power handling capability for a given resistor width. Also disclosed are examples of how the foregoing features can be implemented in different products and methods of fabrication.
    • 公开了与具有薄膜电阻器组件的衰减器相关的设计和方法。 在一些实施例中,薄膜组件可以包括第一和第二薄膜电阻器,每个薄膜电阻器具有主要部分,其具有输入端和输出端。 第一薄膜电阻器的输入端与第二薄膜电阻器的输入端互连,第一薄膜电阻器的输出端与第二薄膜电阻器的输出端互连。 第一和第二薄膜电阻器相对于彼此设置以限定分离。 分离区域降低了在薄膜结构的中心处或附近形成热点区域的可能性,并且改善给定电阻器宽度的功率处理能力。 还公开了如何在不同的产品和制造方法中实现前述特征的示例。