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1. 发明授权

US4868096A Surface treatment of silicone-based coating films 失效
标题翻译：硅胶涂层的表面处理
公开(公告)号：US4868096A
公开(公告)日：1989-09-19
申请号：US92485
申请日：1987-09-03
申请人： Muneo Nakayama , Akira Uehara , Akira Hashimoto , Toshihiro Nishimura , Isamu Hijikata , Mitsuaki Minato , Eiichi Kashiwagi
发明人： Muneo Nakayama , Akira Uehara , Akira Hashimoto , Toshihiro Nishimura , Isamu Hijikata , Mitsuaki Minato , Eiichi Kashiwagi
IPC分类号： G03F7/11
CPC分类号： G03F7/11
摘要： The adhesiveness of a silicone-based coating film on a substrate to an overcoating layer, e.g., a photoresist layer, can be improved without causing cracks when the silicone-based coating film is subjected to a plasma treatment at a temperature of 120.degree. C. or below in an atmosphere of a gas mainly composed of oxygen. Similar conditions of plasma treatment are applicable when patterning of a silicone-based coating film is desired in a procedure comprising the steps of forming a photoresist layer thereon, patterning of the photoresist layer in a photolithographic method, selectively etching the silicone-based coating film with the patterned resist layer serving as a mask and removing the photoresist layer by the plasma treatment.
摘要翻译：当将硅氧烷基涂膜在120℃的温度下进行等离子体处理时，可以改善基材上的硅酮基涂膜与外涂层（例如光致抗蚀剂层）的粘附性，而不引起裂纹。在主要由氧组成的气体的气氛中。等离子体处理的类似条件适用于当在包括以下步骤的步骤中需要对硅氧烷基涂膜进行图案化的步骤时，在其上形成光致抗蚀剂层，以光刻方法对光刻胶层进行图案化，选择性地蚀刻硅氧烷基涂膜图案化的抗蚀剂层用作掩模并通过等离子体处理去除光致抗蚀剂层。

2. 发明授权

US4749436A Equipment for thermal stabilization process of photoresist pattern on semiconductor wafer 失效
标题翻译：半导体晶片上光致抗蚀剂图案的热稳定化处理设备
公开(公告)号：US4749436A
公开(公告)日：1988-06-07
申请号：US79257
申请日：1987-07-29
申请人： Mitsuaki Minato , Isamu Hijikata , Akira Uehara , Muneo Nakayama
发明人： Mitsuaki Minato , Isamu Hijikata , Akira Uehara , Muneo Nakayama
IPC分类号： H01L21/027 , G03C5/00 , G03F7/20 , G03F7/38 , G03F7/40 , G07F7/00 , B44C1/22 , B29C37/00 , C03C15/00 , C03C25/06
CPC分类号： G03F7/2024 , Y10S438/948
摘要： An equipment (100; 200) for thermal stabilization process of photoresist pattern on semiconductor wafer comprises an ultraviolet lamp (20) by which a photoresist pattern formed on a semiconductor wafer (W) put in a process chamber (S) under vacuum pressure is irradiated with ultraviolet rays of a predetermined strength, and a heater (10) for heating the wafer to a predetermined temperature.
摘要翻译：用于半导体晶片上的光致抗蚀剂图案的热稳定化处理的设备（100; 200）包括紫外线灯（20），其中在真空压力下放置在处理室（S）中的半导体晶片（W）上形成的光致抗蚀剂图案被照射具有预定强度的紫外线，以及用于将晶片加热到预定温度的加热器（10）。

3. 发明授权

US4528934A Thin-film coating apparatus 失效
标题翻译：薄膜涂装设备
公开(公告)号：US4528934A
公开(公告)日：1985-07-16
申请号：US524605
申请日：1983-08-19
申请人： Muneo Nakayama
发明人： Muneo Nakayama
IPC分类号： B05C9/08 , B05C11/08 , B05D1/40 , G03F7/16 , H01L21/027
CPC分类号： G03F7/162 , B05C11/08 , B05C9/08
摘要： A thin-film coating apparatus comprising a device for applying in a dropwise manner a film-forming coating solution onto a material to be treated, a spinner adapted to rotate the material, a casing for enclosing the material, and a wall surface provided within the casing such that the wall surface faces the material, the wall surface being wet with a solvent for a solute of the coating solution. The apparatus is effective in applying a high-quality uniform coating film at a high speed, thereby facilitating the mass-production of thin-film coated materials or articles.
摘要翻译：一种薄膜涂覆装置，包括用于将成膜涂层溶液逐滴涂布到待处理材料上的装置，适于旋转材料的旋转器，用于封闭材料的壳体，以及设置在其内的壁面套管使得壁表面面向材料，壁表面用用于溶剂溶剂的溶剂润湿。该设备在高速应用高质量的均匀涂膜方面是有效的，从而有利于大量生产薄膜涂覆材料或制品。

4. 发明授权

US4527865A Electrochromic display device 失效
标题翻译：电致变色显示装置
公开(公告)号：US4527865A
公开(公告)日：1985-07-09
申请号：US579006
申请日：1984-02-15
申请人： Junichi Washo , Takaaki Miyazaki , Mitsuo Ishii , Muneo Nakayama , Akira Hashimoto , Toshihiro Nishimura
发明人： Junichi Washo , Takaaki Miyazaki , Mitsuo Ishii , Muneo Nakayama , Akira Hashimoto , Toshihiro Nishimura
IPC分类号： G02F1/17 , G02F1/15 , G02F1/153 , G09F9/30
CPC分类号： G02F1/1533
摘要： An electrochromic display device comprising a transparent substrate and a counter substrate sealingly joined together to define a cell for accommodating an electrolyte, a transparent electroconductive layer on an inner surface of the transparent substrate, a display electrode layer overlaying the transparent electroconductive layer and a counter electrode layer deposited on an inner surface of the counter substrate is featured by the provision of a transparent insulating layer between the transparent substrate and the transparent electroconductive layer.
摘要翻译：一种电致变色显示装置，包括透明基板和对置基板，密封地连接在一起以限定用于容纳电解质的单元，在透明基板的内表面上的透明导电层，覆盖透明导电层的显示电极层和对置电极在对置基板的内表面上沉积的层的特征在于在透明基板和透明导电层之间设置透明绝缘层。

5. 发明授权

US5261566A Solution-dropping nozzle device 失效
标题翻译：滴液喷嘴装置
公开(公告)号：US5261566A
公开(公告)日：1993-11-16
申请号：US946260
申请日：1992-09-16
申请人： Muneo Nakayama
发明人： Muneo Nakayama
IPC分类号： B05B15/02 , B65D47/18
CPC分类号： B05B15/025
摘要： A thin-film coating apparatus for forming a metal oxide film or diffusion source film on the surfaces of materials to be treated. The apparatus includes a solution-dropping nozzle device including an inner tube adapted to cause a solution to flow down therethrough and an outer tube enclosing the inner tube. The inner wall of the outer tube is spaced from the outer wall of the inner tube so as to define a flow path therebetween, the flow path being adapted to supply a cleaning solution to the tip portion of the inner tube. Because the tip portion of the inner tube can be cleaned efficiently, any concentration or deposition of the dropping solution is prevented from occurring at the tip portion of the inner tube.
摘要翻译：一种用于在待处理材料的表面上形成金属氧化物膜或扩散源膜的薄膜涂覆装置。该设备包括一个溶液滴喷嘴装置，其包括适于使溶液向下流动的内管和封闭内管的外管。外管的内壁与内管的外壁间隔开以限定其间的流动路径，该流动路径适于将清洁溶液供应到内管的末端部分。因为可以有效地清洁内管的尖端部分，所以可以防止在内管的尖端处发生滴液的浓缩或沉积。

6. 发明授权

US5156884A Method for forming a film of oxidized metal 失效
标题翻译：形成氧化金属膜的方法
公开(公告)号：US5156884A
公开(公告)日：1992-10-20
申请号：US638016
申请日：1991-01-07
申请人： Katsuya Tanitsu , Muneo Nakayama , Akira Hashimoto , Toshihiro Nishimura
发明人： Katsuya Tanitsu , Muneo Nakayama , Akira Hashimoto , Toshihiro Nishimura
IPC分类号： C23C18/14
CPC分类号： C23C18/14
摘要： The inventive method comprises the steps of coating the substrate surface with a coating solution containing .beta.-diketone complex of a metallic element in an aprotic polar solvent, drying and irradiating the coating film on the surface with ultraviolet light, optionally, followed by a heat treatment to form an electrically insulating oxidized metal film on the surface. By virtue of the ultraviolet irradiation, the oxidized metal film can be imparted with increased insulation even by omitting the heat treatment or by decreasing the temperature of the heat treatment so that the adverse influences on the characteristics of the substrate can be minimized.
摘要翻译：本发明的方法包括以下步骤：在非质子极性溶剂中用含有金属元素的β-二酮配合物的涂布溶液涂覆基材表面，然后用紫外线干燥并在表面上照射涂膜，然后进行热处理以在表面上形成电绝缘的氧化金属膜。通过紫外线照射，即使省略热处理，也可以通过降低热处理的温度，能够赋予氧化金属膜更高的绝缘性，从而可以使对基板的特性的不利影响最小化。

7. 发明授权

US4894254A Method of forming silicone film 失效
标题翻译：形成硅胶膜的方法
公开(公告)号：US4894254A
公开(公告)日：1990-01-16
申请号：US272083
申请日：1988-11-16
申请人： Muneo Nakayama , Akira Hashimoto , Toshihiro Nishimura , Akira Uehara , Isamu Hijikata
发明人： Muneo Nakayama , Akira Hashimoto , Toshihiro Nishimura , Akira Uehara , Isamu Hijikata
IPC分类号： B05D3/02 , B05D3/06 , B05D3/14 , B29C59/14 , C09D183/04 , G02F1/1337 , H01L21/312
CPC分类号： C08J7/123 , B05D3/145 , B29C59/14 , C09D183/04 , G02F1/133711 , H01L21/3121 , B05D2518/10 , B05D3/02 , C08J2383/04
摘要： A silicone film is formed by drying a solution coated on a substrate at a temperature below 150.degree. C. to form a silicone film on the substrate, treating the silicone film in an oxygen plasma, and heating the silicone film treated in the plasma at a temperature of 150.degree. C. or higher.
摘要翻译：通过在低于150℃的温度下干燥涂覆在基材上的溶液来形成硅氧烷膜，以在基材上形成硅酮膜，在氧等离子体中处理硅酮膜，并加热在等离子体中处理的硅酮薄膜温度为150℃以上。

8. 发明授权

US4790262A Thin-film coating apparatus 失效
标题翻译：薄膜涂装设备
公开(公告)号：US4790262A
公开(公告)日：1988-12-13
申请号：US914328
申请日：1986-10-01
申请人： Muneo Nakayama , Akira Uehara , Hiroyoshi Sago , Hideyuki Mizuki
发明人： Muneo Nakayama , Akira Uehara , Hiroyoshi Sago , Hideyuki Mizuki
IPC分类号： B05C11/08 , G03F7/16 , H01L21/00 , H01L21/027
CPC分类号： H01L21/6715 , G03F7/162 , Y10S134/902
摘要： A thin-film coating apparatus for coating a thin film on a material includes a casing, a spinner mounted in the casing for rotating the material, and a pipe disposed upwardly of the spinner and having in a lower end thereof a nozzle for dropping a film-forming coating solution onto the material. The casing comprises an annular upper plate, a cylindrical circumferential wall, and a bottom plate. The annular upper plate has defined therein gas flow passages for passage of an inert gas such as an N.sub.2 gas introduced from an exterior supply source, and gas ejector holes defined in the upper surface of the annular upper plate in communication with the gas flow passages for ejecting the inert gas toward the pipe.
摘要翻译：用于在材料上涂覆薄膜的薄膜涂布装置包括壳体，安装在壳体中用于旋转材料的旋转器和设置在旋转器的上方的管，并且在其下端具有用于滴下薄膜的喷嘴形成涂层溶液。壳体包括环形上板，圆柱形周壁和底板。环形上板限定有用于通过诸如从外部供应源引入的N 2气体的惰性气体的气体流动通道和限定在环形上板的上表面中的与气体流动通道连通的气体排出孔，向管道喷射惰性气体。

9. 发明授权

US4960618A Process for formation of metal oxide film 失效
标题翻译：金属氧化膜形成工艺
公开(公告)号：US4960618A
公开(公告)日：1990-10-02
申请号：US461873
申请日：1990-01-08
申请人： Katsuya Tanitsu , Muneo Nakayama , Yoshimi Sato
发明人： Katsuya Tanitsu , Muneo Nakayama , Yoshimi Sato
IPC分类号： C23C18/12 , G02F1/1333 , H01L21/316
CPC分类号： C23C18/1216 , G02F1/133345 , H01L21/316
摘要： A process for the formation of a metal oxide film on a substrate by coating the substrate with a coating solution and heating the substrate to a temperature of at least 100.degree. C. The coating solution is composed of (a) a .beta.-diketone, (b) at least one element or compound selected from the group consisting of elements capable of forming complexes with said .beta.-diketone, salts of the elements and hydrolysates of alkoxides of the elements, and (c) an aprotic polar solvent. As an alternative, it is composed of a metal complex of a .beta.-diketone and an aprotic polar solvent.
摘要翻译：一种在基材上形成金属氧化物膜的方法，该方法是通过用涂布溶液涂覆基材并将该基材加热到至少100℃的温度。涂布溶液由（a）β-二酮（ b）至少一种选自能够与所述β-二酮形成络合物的元素，元素的盐和元素的醇盐的水解产物的组分，和（c）非质子极性溶剂。作为替代，它由β-二酮和非质子极性溶剂的金属络合物组成。

10. 发明授权

US4793862A Silica-based antimony containing film-forming composition 失效
标题翻译：含二氧化硅的含锑成膜组合物
公开(公告)号：US4793862A
公开(公告)日：1988-12-27
申请号：US92510
申请日：1987-09-03
申请人： Tsutomu Ishikawa , Muneo Nakayama , Akira Hashimoto , Toshihiro Nishimura
发明人： Tsutomu Ishikawa , Muneo Nakayama , Akira Hashimoto , Toshihiro Nishimura
IPC分类号： H01L21/22 , H01L21/225 , C09K3/00
CPC分类号： H01L21/2255 , H01L21/2225
摘要： An improved silica-based film-forming composition for diffusion of antimony in the doping works of semiconductors is proposed which comprises an organic solvent, a partial hydrolysis product of an alkoxy silane compound and an antimony compound dissolved in the organic solvent. The antimony compound in the inventive composition is an alkoxy antimony or aryloxy antimony compound so that the problem of corrosion of the coating apparatus can be entirely avoided without decreasing the dopant concentration in the semiconductor substrate, as well as to provide a film-forming composition which is advantageously stable in storage.
摘要翻译：提出了一种改进的二氧化硅基成膜组合物，用于在半导体的掺杂工艺中扩散锑，其包括有机溶剂，烷氧基硅烷化合物的部分水解产物和溶解在有机溶剂中的锑化合物。本发明组合物中的锑化合物是烷氧基锑或芳氧基锑化合物，从而可以在不降低半导体衬底中的掺杂剂浓度的情况下完全避免涂覆装置的腐蚀问题，以及提供一种成膜组合物，有利地在储存中稳定。

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