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    • 2. 发明授权
    • Porous silicon nitride with rodlike grains oriented
    • 多孔氮化硅,棒状晶粒取向
    • US5935888A
    • 1999-08-10
    • US848224
    • 1997-04-29
    • Motohiro ToriyamaKiyoshi HiraoManuel E. BritoSyuzo KanzakiYasuhiro Shigegaki
    • Motohiro ToriyamaKiyoshi HiraoManuel E. BritoSyuzo KanzakiYasuhiro Shigegaki
    • B28B3/02C04B30/02C04B35/622C04B35/626C04B35/64C04B38/00C04B35/584
    • C04B38/00C04B30/02C04B38/0051
    • An object of the present invention is to provide a high-porosity, high-strength porous silicon nitride having great tolerance with respect to strain and stress, and a method for producing the same, and the present invention relates to a high-porosity, high-strength porous silicon nitride having great tolerance with respect to strain and stress, characterized in that rodlike grains of silicon nitride with a minor diameter of 0.5 to 10 .mu.m and an aspect ratio of 10 to 100 are oriented in a single direction, and the rest of the structure other than the rodlike grains consists solely of pores with a porosity of 5 to 30%, and further the above-mentioned porous silicon nitride is produced by mixing rodlike particles of silicon nitride with a minor diameter of 0.5 to 10 .mu.m and an aspect ratio of 10 to 100 as the silicon nitride with an auxiliary that serves to bind the rodlike particles, forming a tape in which the silicon nitride rodlike particles are oriented in a single direction by sheet forming, extrusion forming, or another such forming process, and sintering this product in a nitrogen atmosphere after lamination and degreasing of it.
    • 本发明的目的是提供一种相对于应变和应力具有很大公差的高孔隙率高强度多孔氮化硅及其制造方法,本发明涉及高孔隙率,高 - 相对于应变和应力具有很大公差的强度多孔氮化硅,其特征在于,小直径为0.5至10μm,长宽比为10至100的氮化硅棒状晶粒沿单一方向取向,并且 杆状颗粒以外的结构的其余部分仅由孔隙率为5〜30%的孔组成,进一步通过将氮化硅的棒状颗粒与0.5〜10μm的小直径混合而制成上述多孔氮化硅 长宽比为10〜100,作为氮化硅与辅助材料,用于粘合棒状颗粒,形成其中氮化硅棒状颗粒沿着单一方向取向的带 等等,形成,挤出成型或另一种这样的成型方法,并在层压和脱脂之后在氮气气氛中烧结该产品。
    • 4. 发明授权
    • Method of producing silicon nitride ceramics having thermal high
conductivity
    • 具有导热性高的氮化硅陶瓷的制造方法
    • US5902542A
    • 1999-05-11
    • US766317
    • 1996-12-13
    • Kiyoshi HiraoKoji WatariMotohiro ToriyamaSyuzo KanzakiMasaaki Obata
    • Kiyoshi HiraoKoji WatariMotohiro ToriyamaSyuzo KanzakiMasaaki Obata
    • C04B35/584C04B35/593C04B35/638C04B35/64C04B35/645
    • C04B35/5935
    • The present invention provides silicon nitride ceramics having high thermal conductivity and a method for production thereof. This invention relates to a method for producing a silicon nitride sintered body having a microstructure with silicon nitride crystals oriented uniaxially and exhibiting high thermal conductivity of 100 to 150 W/mK in the direction parallel to the orientation direction of the crystals, which comprises of preparing a slurry by mixing a mixed powder of a sintering auxiliary, beta-silicon nitride single crystals as seed crystals and a silicon nitride raw powder with a dispersing medium, forming the slurry by tape casting or extrusion forming, calcining the formed silicon nitride body with beta-silicon nitride single crystals oriented parallel to the casting plane to remove the organic components, densifying it by hot pressing and the like if required, and further annealing it at 1700 to 2000.degree. C. under the nitrogen pressure of 1 to 100 atmospheres.
    • 本发明提供了具有高导热性的氮化硅陶瓷及其制造方法。 本发明涉及一种具有氮化硅结构的氮化硅烧结体的制造方法,该氮化硅烧结体具有在与晶体取向方向平行的方向上单轴取向并具有100〜150W / mK的高导热率的微结构, 通过将烧结助剂,β-氮化硅单晶的混合粉末作为晶种和氮化硅原料粉末与分散介质混合来形成浆料,通过带状流延或挤出成型形成浆料,用β - 氮化硅单晶,其平行于铸造平面取向以去除有机组分,如果需要,通过热压等来致密化,并且在1〜100个大气压的氮气压力下,在1700〜2000℃进一步退火。