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1. 发明授权

US07508120B2 Piezoelectric element and method for manufacturing 失效
标题翻译：压电元件及其制造方法
公开(公告)号：US07508120B2
公开(公告)日：2009-03-24
申请号：US10543119
申请日：2004-01-21
申请人： Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama , Noriyuki Kuwano
发明人： Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama , Noriyuki Kuwano
IPC分类号： H01L41/09
CPC分类号： H01L41/316
摘要： A lower electrode is formed on a silica glass substrate or a stainless substrate. Through a sputtering process, a thin film of aluminum nitride and/or zinc oxide is formed on the lower substrate so that the degree of dipole-orientation becomes 55% or more, and thereby a piezoelectric thin film is formed. And an upper electrode is formed on the piezoelectric thin film.A piezoelectric device has a piezoelectric layer made of aluminum nitride and/or zinc oxide. Aluminum nitride and zinc oxide with a crystal structure have inborn piezoelectric characteristics because their crystal structures are not symmetrical, they do not have Curie temperature unlike ferroelectrics, and in aluminum nitride and zinc oxide, magnetic transition does not occur even at high temperature, so that they never lose piezoelectric characteristics until crystal melts or sublimates.
摘要翻译：在石英玻璃基板或不锈钢基板上形成下电极。通过溅射工艺，在下基板上形成氮化铝和/或氧化锌薄膜，使得偶极取向度达到55％以上，从而形成压电薄膜。并且在压电薄膜上形成上电极。压电装置具有由氮化铝和/或氧化锌制成的压电层。具有晶体结构的氮化铝和氧化锌具有先天的压电特性，因为它们的晶体结构不对称，它们不像铁电体那样具有居里温度，并且在氮化铝和氧化锌中，即使在高温下也不会发生磁转变，因此在晶体熔化或升华之前，它们不会失去压电特性。

2. 发明申请

US20060131680A1 Piezoelectric element and method for manufacturing 失效
公开(公告)号：US20060131680A1
公开(公告)日：2006-06-22
申请号：US10543119
申请日：2004-01-21
申请人： Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama , Noriyuki Kuwano
发明人： Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama , Noriyuki Kuwano
IPC分类号： H01L29/84
CPC分类号： H01L41/316
摘要： A lower electrode is formed on a silica glass substrate or a stainless substrate. Through a sputtering process, a thin film of aluminum nitride and/or zinc oxide is formed on the lower substrate so that the degree of dipole-orientation becomes 55% or more, and thereby a piezoelectric thin film is formed. And an upper electrode is formed on the piezoelectric thin film. A piezoelectric device has a piezoelectric layer made of aluminum nitride and/or zinc oxide. Aluminum nitride and zinc oxide with a crystal structure have inborn piezoelectric characteristics because their crystal structures are not symmetrical, they do not have Curie temperature unlike ferroelectrics, and in aluminum nitride and zinc oxide, magnetic transition does not occur even at high temperature, so that they never lose piezoelectric characteristics until crystal melts or sublimates.

3. 发明授权

US07642693B2 Wurtzite thin film, laminate containing wurtzite crystalline layer and their manufacturing methods 有权
标题翻译：纤锌矿薄膜，含纤锌矿结晶层的层压板及其制造方法
公开(公告)号：US07642693B2
公开(公告)日：2010-01-05
申请号：US10556663
申请日：2004-05-14
申请人： Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama , Toshihiro Kamohara
发明人： Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama , Toshihiro Kamohara
IPC分类号： H01L41/083
CPC分类号： H01L41/316 , C23C14/06 , C30B23/00 , C30B29/403 , C30B29/406 , H01L41/257
摘要： A thin film made of a wurtzite structure compound is manufactured by a reactive sputtering using a metal material as a target, and a nitrogen gas or oxygen gas as a reactive gas. By optimizing film-forming conditions when manufacturing the film, it is possible to obtain a wurtzite thin film whose polarization directions of crystal grains are aligned in a uniform direction. There is provided a laminate including a first wurtzite crystalline layer made of a wurtzite crystalline structure compound is formed in advance between a substrate and a functional material layer that is a ground. Thus it is possible to improve the crystallinity and crystalline orientation of a second wurtzite crystalline layer on the functional material layer.
摘要翻译：通过使用金属材料作为靶的反应性溅射和作为反应气体的氮气或氧气制造由纤锌矿结构化合物制成的薄膜。通过在制造膜时优化成膜条件，可以获得其晶粒的极化方向在均匀方向上排列的纤锌矿薄膜。提供了一种层压体，其包括在基体和作为地面的功能材料层之间预先形成由纤锌矿结晶化合物制成的第一纤锌矿结晶层。因此，可以提高功能材料层上的第二纤锌矿结晶层的结晶度和结晶取向性。

4. 发明授权

US06608427B2 High-sensitivity flexible ceramic sensor 失效
公开(公告)号：US06608427B2
公开(公告)日：2003-08-19
申请号：US10237121
申请日：2002-09-09
申请人： Morito Akiyama , Naohiro Ueno , Kiichi Ikeda , Kazuhiro Nonaka , Hiroshi Tateyama
发明人： Morito Akiyama , Naohiro Ueno , Kiichi Ikeda , Kazuhiro Nonaka , Hiroshi Tateyama
IPC分类号： H01L4104
CPC分类号： H01L41/1132
摘要： Disclosed is a high-sensitivity flexible ceramic sensor for detecting mechanical shocks and vibrations, which comprises a metal foil of a specified thickness as a substrate, a single-crystalline thin film of a piezoelectric ceramic material such as aluminum nitride and zinc oxide having a specified thickness formed on the substrate, a metallic electrode formed on the thin ceramic film and an external circuit connecting the metal foil and the electrode with insertion of an electric meter for measuring the piezoelectric voltage changes induced in the ceramic thin film.

5. 发明授权

US06823739B2 Thin pressure sensor and biological information measuring device using same, and biological information measuring method 失效
标题翻译：薄压力传感器和使用其的生物信息测量装置，以及生物信息测量方法
公开(公告)号：US06823739B2
公开(公告)日：2004-11-30
申请号：US10317161
申请日：2002-12-12
申请人： Naohiro Ueno , Morito Akiyama , Kiichi Ikeda , Hiroshi Tateyama
发明人： Naohiro Ueno , Morito Akiyama , Kiichi Ikeda , Hiroshi Tateyama
IPC分类号： G01L900
CPC分类号： A61B5/6892 , A61B5/021 , A61B5/1126 , A61B2562/0247 , G01L9/008
摘要： A thin pressure sensor includes: a pair of external electrodes, which are respectively made of conductive thin films that are respectively provided with piezoelectric layers on inner sides; and a single internal electrode, made of a conductive thin film, which is sealed between the pair of external electrodes, one of the pair of external electrodes having a conducting window that conducts to said internal electrode. The thin pressure sensor has a simple and thin structure with sufficient durability and mechanical strength.
摘要翻译：薄压力传感器包括：一对外部电极，其分别由内侧上分别设置有压电层的导电薄膜制成; 以及密封在一对外部电极之间的由导电薄膜制成的单个内部电极，所述一对外部电极中的一个具有导通到所述内部电极的导电窗口。薄压力传感器具有简单而薄的结构，具有足够的耐久性和机械强度。

6. 发明授权

US07233094B2 Piezoelectric device comprising ultrahighly-oriented aluminum nitride thin film and its manufacturing method 失效
标题翻译：包含超高取向氮化铝薄膜的压电器件及其制造方法
公开(公告)号：US07233094B2
公开(公告)日：2007-06-19
申请号：US10516333
申请日：2003-05-29
申请人： Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama , Yoshitaka Sunagawa , Yoshihiro Umeuchi , Keiichiro Jinushi
发明人： Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama , Yoshitaka Sunagawa , Yoshihiro Umeuchi , Keiichiro Jinushi
IPC分类号： H01L41/04 , H01L41/18 , H04R17/00
CPC分类号： H01L41/316 , Y10T29/42
摘要： The present invention has an objective to provide a high performance piezoelectric element in which is formed an aluminum nitride thin film free from hillocks, cracks, and peeling which exhibits superhigh c-axis orientation, by forming a bottom electrode from a W layer with no intervening adhesive layer on a glass or other cheap substrate. The piezoelectric element of the present invention is a piezoelectric element using a superhigh-oriented aluminum nitride thin film characterized in that the piezoelectric element is free from hillocks, cracks, and peeling and includes a stack structure in which a bottom electrode, a piezoelectric body thin film, and a top electrode are sequentially formed on a substrate; the bottom electrode is made of an oriented W layer of which a (111) plane of W is parallel to a surface of the substrate; and the piezoelectric body thin film is formed of a c-axis-oriented aluminum nitride thin film having a rocking curve full width half maximum (RCFWHM) not exceeding 2.5°.
摘要翻译：本发明的目的是提供一种高性能压电元件，其通过从W层形成底部电极而不间断地形成不具有超高c轴取向的小丘，裂纹和剥离的氮化铝薄膜粘合剂层在玻璃或其他便宜的基材上。本发明的压电元件是使用超高取向氮化铝薄膜的压电元件，其特征在于，压电元件没有小丘，裂纹和剥离，并且包括堆叠结构，其中底部电极，压电体薄膜和顶电极依次形成在基板上; 底部电极由取向的W层制成，其中W（111）面平行于衬底的表面; 并且压电体薄膜由具有不超过2.5°的摇摆曲线全宽半最大值（RCFWHM）的c轴取向氮化铝薄膜形成。

7. 发明申请

US20050236710A1 Piezoelectric device comprising ultrahighly-orientated aluminum nitride thin film and its manufacturing method 失效
标题翻译：包含超高取向氮化铝薄膜的压电器件及其制造方法
公开(公告)号：US20050236710A1
公开(公告)日：2005-10-27
申请号：US10516333
申请日：2003-05-29
申请人： Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama , Yoshitaka Sunagawa , Yoshihiro Umeuchi , Keiichiro Jinushi
发明人： Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama , Yoshitaka Sunagawa , Yoshihiro Umeuchi , Keiichiro Jinushi
IPC分类号： C23C14/34 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/29 , H01L41/316 , H01L21/28 , H01L23/52
CPC分类号： H01L41/316 , Y10T29/42
摘要： The present invention has an objective to provide a high performance piezoelectric element in which is formed an aluminum nitride thin film free from hillocks, cracks, and peeling which exhibits superhigh c-axis orientation, by forming a bottom electrode from a W layer with no intervening adhesive layer on a glass or other cheap substrate. The piezoelectric element of the present invention is a piezoelectric element using a superhigh-oriented aluminum nitride thin film characterized in that the piezoelectric element is free from hillocks, cracks, and peeling and includes a stack structure in which a bottom electrode, a piezoelectric body thin film, and a top electrode are sequentially formed on a substrate; the bottom electrode is made of an oriented W layer of which a (111) plane of W is parallel to a surface of the substrate; and the piezoelectric body thin film is formed of a c-axis-oriented aluminum nitride thin film having a rocking curve full width half maximum (RCFWHM) not exceeding 2.5°.
摘要翻译：本发明的目的是提供一种高性能压电元件，其通过从W层形成底部电极而不间断地形成不具有超高c轴取向的小丘，裂纹和剥离的氮化铝薄膜粘合剂层在玻璃或其他便宜的基材上。本发明的压电元件是使用超高取向氮化铝薄膜的压电元件，其特征在于，压电元件没有小丘，裂纹和剥离，并且包括堆叠结构，其中底部电极，压电体薄膜和顶电极依次形成在基板上; 底部电极由取向的W层制成，其中W（111）面平行于衬底的表面; 并且压电体薄膜由具有不超过2.5°的摇摆曲线全宽半最大值（RCFWHM）的c轴取向氮化铝薄膜形成。

8. 发明申请

US20070057285A1 Wurtzite thin film, laminate containing wurtzite crystalline layer and their manufacturing methods 有权
标题翻译：纤锌矿薄膜，含纤锌矿结晶层的层压板及其制造方法
公开(公告)号：US20070057285A1
公开(公告)日：2007-03-15
申请号：US10556663
申请日：2004-05-14
申请人： Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama , Toshihiro Kamohara
发明人： Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama , Toshihiro Kamohara
IPC分类号： H01L29/732 , H01L31/00 , H01L21/00
CPC分类号： H01L41/316 , C23C14/06 , C30B23/00 , C30B29/403 , C30B29/406 , H01L41/257
摘要： According to the present invention, a thin film made of a wurtzite structure compound is manufactured by a reactive sputtering using a metal material as a target, and a nitrogen gas or an oxygen gas as a reactive gas. By optimizing film-forming conditions when manufacturing the film, it is possible to obtain a wurtzite thin film whose polarization directions of crystal grains are aligned in a uniform direction. According to a laminate of the present invention, a first wurtzite crystalline layer made of a wurtzite crystalline structure compound is formed in advance between a substrate and a functional material layer that is a ground. Thus, it is possible to improve the crystallinity and crystalline orientation of a second wurtzite crystalline layer formed on the functional material layer.
摘要翻译：根据本发明，通过使用金属材料作为靶的反应性溅射和作为反应气体的氮气或氧气制造由纤锌矿结构化合物制成的薄膜。通过在制造膜时优化成膜条件，可以获得其晶粒的极化方向在均匀方向上排列的纤锌矿薄膜。根据本发明的层压体，预先在基板和作为地面的功能性材料层之间形成由纤锌矿型结晶化合物构成的第一纤锌矿结晶层。因此，可以提高在功能材料层上形成的第二纤锌矿结晶层的结晶度和结晶取向性。

9. 发明授权

US07152482B2 Piezoelectric sensor and input device including same 失效
标题翻译：压电传感器和输入装置包括它
公开(公告)号：US07152482B2
公开(公告)日：2006-12-26
申请号：US10529746
申请日：2003-09-26
申请人： Naohiro Ueno , Morito Akiyama , Hiroshi Tateyama
发明人： Naohiro Ueno , Morito Akiyama , Hiroshi Tateyama
IPC分类号： G01L9/00
CPC分类号： G06F3/0414 , G01L1/16 , G01L9/008 , G01L23/222
摘要： A piezoelectric sensor arranged so as to includes: a transparent piezoelectric element having a piezoelectric property; and a pair of transparent conductor film layers opposed to each other with the piezoelectric element therebetween, the transparent piezoelectric element and the transparent conductor film layers are formed between a pair of transparent substrates, opposed to each other, which serve as pressure transmission means. Consequently, the transparent piezoelectric sensor has an excellent durability. A piezoelectric sensor comprises a piezoelectric element with a piezoelectric property which is made of a piezoelectric material having no Curie point and has a dipole orientation degree of not less than 75%. Consequently, the piezoelectric sensor having an excellent durability and a simple structure is provided at low cost.
摘要翻译：一种压电传感器，其布置成包括：具有压电特性的透明压电元件; 和一对彼此相对的透明导电膜层，透明压电元件和透明导体膜层形成在彼此相对的一对透明基板之间，用作压力传递装置。因此，透明压电传感器具有优异的耐久性。压电传感器包括具有压电特性的压电元件，该压电元件由不具有居里点且具有不小于75％的偶极取向度的压电材料制成。因此，以低成本提供了具有优异的耐久性和简单结构的压电传感器。

10. 发明申请

US20060144154A1 Piezoelectric sensor and input device comprising same 失效
标题翻译：压电传感器和包括其的输入装置
公开(公告)号：US20060144154A1
公开(公告)日：2006-07-06
申请号：US10529746
申请日：2003-09-26
申请人： Naohiro Ueno , Morito Akiyama , Hiroshi Tateyama
发明人： Naohiro Ueno , Morito Akiyama , Hiroshi Tateyama
IPC分类号： G01L9/00
CPC分类号： G06F3/0414 , G01L1/16 , G01L9/008 , G01L23/222
摘要： A piezoelectric sensor arranged so as to includes: a transparent piezoelectric element having a piezoelectric property; and a pair of transparent conductor film layers opposed to each other with the piezoelectric element therebetween, the transparent piezoelectric element and the transparent conductor film layers are formed between a pair of transparent substrates, opposed to each other, which serve as pressure transmission means. Consequently, the transparent piezoelectric sensor has an excellent durability. A piezoelectric sensor comprises a piezoelectric element with a piezoelectric property which is made of a piezoelectric material having no Curie point and has a dipole orientation degree of not less than 75%. Consequently, the piezoelectric sensor having an excellent durability and a simple structure is provided at low cost.
摘要翻译：一种压电传感器，其布置成包括：具有压电特性的透明压电元件; 和一对彼此相对的透明导电膜层，透明压电元件和透明导体膜层形成在彼此相对的一对透明基板之间，用作压力传递装置。因此，透明压电传感器具有优异的耐久性。压电传感器包括具有压电特性的压电元件，该压电元件由不具有居里点且具有不小于75％的偶极取向度的压电材料制成。因此，以低成本提供了具有优异的耐久性和简单结构的压电传感器。

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