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1. 发明申请

US20060226125A1 Chemical-mechanical polishing (CMP) slurry and method of planarizing computer memory disk surfaces 失效
标题翻译：化学机械抛光（CMP）浆料和平面化计算机存储盘表面的方法
公开(公告)号：US20060226125A1
公开(公告)日：2006-10-12
申请号：US11447212
申请日：2006-06-05
申请人： Mingming Fang , Michael Ianiro , Don Eisenhour
发明人： Mingming Fang , Michael Ianiro , Don Eisenhour
IPC分类号： C09K13/00 , H01L21/461 , B44C1/22 , C23F1/00
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/3212
摘要： Compositions and methods for planarizing or polishing a surface, particularly a semiconductor wafer surface. The polishing compositions described herein comprise (a) a liquid carrier; (b) purified clay; and optional additives, such as (c) a chemical accelerator; and (d) a complexing or coupling agent capable of chemically or ionically complexing with, or coupling to, the metal and/or insulating material removed during the polishing process. The complexing or coupling agent carries away the removed metal and/or silicon dioxide insulator particles, during polishing, to prevent the separated particles from returning to the surface from which they were removed. Also disclosed are methods of planarizing or polishing a surface comprising contacting the surface with the compositions.
摘要翻译：用于平坦化或抛光表面，特别是半导体晶片表面的组合物和方法。本文所述的抛光组合物包含（a）液体载体; （b）纯化粘土; 和任选的添加剂，例如（c）化学加速剂; 和（d）能够与在抛光过程中除去的金属和/或绝缘材料化学或离子络合或耦合的络合或偶联剂。络合或偶联剂在抛光期间携带去除的金属和/或二氧化硅绝缘体颗粒，以防止分离的颗粒返回到它们被除去的表面。还公开了平面化或抛光表面的方法，包括使表面与组合物接触。

2. 发明申请

US20050233680A1 Method chemical-mechanical polishing and planarizing corundum, GaAs, GaP and GaAs/GaP alloy surfaces 失效
标题翻译：方法化学机械抛光和平面化刚玉，GaAs，GaP和GaAs / GaP合金表面
公开(公告)号：US20050233680A1
公开(公告)日：2005-10-20
申请号：US11131962
申请日：2005-05-18
申请人： Mingming Fang , Michael Ianiro , Don Eisenhour
发明人： Mingming Fang , Michael Ianiro , Don Eisenhour
IPC分类号： B24B1/00 , C09G1/02 , C09K3/14 , H01L21/306
CPC分类号： C09K3/1463 , C09G1/02 , C09K3/1409 , H01L21/30625 , H01L21/31053 , H01L21/3212
摘要： Compositions and methods for planarizing or polishing a corundum, GaAs, GaP or GaAs/GaP alloy surface, particularly a semiconductor wafer surface. The polishing compositions described herein comprise (a) a liquid carrier; (b) a smectite clay, preferably a sodium smectite clay; and optional additives, such as (c) CeO2, SiO2 and/or Al2O3 abrasive particles, (d) a chemical accelerator; and (e) a complexing or coupling agent capable of chemically or ionically complexing with, or coupling to, the material removed during the polishing process. The optional complexing or coupling agent carries away the removed particles, during polishing, to prevent the separated particles from returning to the surface from which they were removed. Also disclosed are methods of planarizing or polishing corundum, GaAs, GaP and GaAs/GaP alloy surfaces comprising contacting the surface with the compositions.
摘要翻译：用于平坦化或抛光刚玉，GaAs，GaP或GaAs / GaP合金表面，特别是半导体晶片表面的组合物和方法。本文所述的抛光组合物包含（a）液体载体; （b）绿土粘土，优选绿土粘土; 和任选的添加剂，例如（c）CeO 2 SiO 2 SiO 2和/或Al 2 O 3 3研磨剂颗粒，（d）化学加速剂; 和（e）能够与在抛光过程中除去的材料化学或离子络合或耦合的络合或偶联剂。任选的络合剂或偶联剂在抛光过程中携带去除的颗粒，以防止分离的颗粒返回到它们被除去的表面。还公开了平面化或抛光刚玉，GaAs，GaP和GaAs / GaP合金表面的方法，包括使表面与组合物接触。

3. 发明申请

US20070011952A1 Chemical-mechanical polishing (CMP) slurry containing clay and CeO2 abrasive particles and method of planarizing surfaces 审中-公开
标题翻译：含有粘土和CeO2磨料颗粒的化学机械抛光（CMP）浆料和平面化表面的方法
公开(公告)号：US20070011952A1
公开(公告)日：2007-01-18
申请号：US11485834
申请日：2006-07-13
申请人： Mingming Fang , Michael Ianiro , Don Eisenhour
发明人： Mingming Fang , Michael Ianiro , Don Eisenhour
IPC分类号： B24D3/02
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053 , H01L21/76243
摘要： A composition for planarizing or polishing a surface comprising (a) a liquid carrier, and (b) solids comprising about 0.1 to about 10% by weight clay abrasive particles, and about 0.1% to about 50% by weight CeO2 particles, based on the total weight of solids in the composition, said clay and CeO2 abrasive particles having a particle size such that at least 90% of the particles (by number), when slurried in water, have a particle size in the range of about 10 nm to about 10 μm.
摘要翻译：用于平坦化或抛光表面的组合物，其包含（a）液体载体，和（b）包含约0.1至约10重量％的粘土磨料颗粒和约0.1重量％至约50重量％的CeO 2 / SUB>颗粒，基于组合物中固体的总重量，所述粘土和CeO 2 O 3研磨颗粒具有使得至少90％的颗粒（数量）的颗粒，当浆料在水中，具有在约10nm至约10um范围内的粒度。

4. 发明申请

US20050074975A1 Chemical-mechanical polishing (CMP) slurry and method of planarizing surfaces 失效
标题翻译：化学机械抛光（CMP）浆料和平面化表面的方法
公开(公告)号：US20050074975A1
公开(公告)日：2005-04-07
申请号：US10677433
申请日：2003-10-02
申请人： Mingming Fang , Michael Ianiro , Don Eisenhour
发明人： Mingming Fang , Michael Ianiro , Don Eisenhour
IPC分类号： C09G1/02 , C09K3/14 , H01L21/321 , H01L21/302 , H01L21/461
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/3212
摘要： Compositions and methods for planarizing or polishing a surface, particularly a semiconductor wafer surface. The polishing compositions described herein comprise (a) a liquid carrier; (b) purified clay; and optional additives, such as (c) a chemical accelerator; and (d) a complexing or coupling agent capable of chemically or ionically complexing with, or coupling to, the metal and/or insulating material removed during the polishing process. The complexing or coupling agent carries away the removed metal and/or silicon dioxide insulator particles, during polishing, to prevent the separated particles from returning to the surface from which they were removed. Also disclosed are methods of planarizing or polishing a surface comprising contacting the surface with the compositions.
摘要翻译：用于平坦化或抛光表面，特别是半导体晶片表面的组合物和方法。本文所述的抛光组合物包含（a）液体载体; （b）纯化粘土; 和任选的添加剂，例如（c）化学加速剂; 和（d）能够与在抛光过程中除去的金属和/或绝缘材料化学或离子络合或耦合的络合或偶联剂。络合或偶联剂在抛光期间携带去除的金属和/或二氧化硅绝缘体颗粒，以防止分离的颗粒返回到它们被除去的表面。还公开了平面化或抛光表面的方法，包括使表面与组合物接触。

5. 发明申请

US20050277367A1 Chemical-mechanical polishing (CMP) slurry containing clay and CeO2 abrasive particles and method of planarizing surfaces 失效
标题翻译：含有粘土和CeO2磨料颗粒的化学机械抛光（CMP）浆料和平面化表面的方法
公开(公告)号：US20050277367A1
公开(公告)日：2005-12-15
申请号：US10867337
申请日：2004-06-14
申请人： Mingming Fang , Michael Ianiro , Don Eisenhour
发明人： Mingming Fang , Michael Ianiro , Don Eisenhour
IPC分类号： C03C19/00 , C09G1/02 , C09K3/14 , H01L21/00 , H01L21/3105 , H01L21/321 , B24B1/00
CPC分类号： C09G1/02 , C03C19/00 , C09K3/1409 , C09K3/1463 , H01L21/31053 , H01L21/3212
摘要： A composition for planarizing or polishing a surface comprising (a) a liquid carrier, and (b) solids comprising about 0.1 to about 10% by weight clay abrasive particles, and about 0.1% to about 50% by weight CeO2 particles, based on the total weight of solids in the composition, said clay and CeO2 abrasive particles having a particle size such that at least 90% of the particles (by number), when slurried in water, have a particle size in the range of about 10 nm to about 10 μm.
摘要翻译：用于平坦化或抛光表面的组合物，其包含（a）液体载体，和（b）包含约0.1至约10重量％的粘土磨料颗粒和约0.1重量％至约50重量％的CeO 2 / SUB>颗粒，基于组合物中固体的总重量，所述粘土和CeO 2 O 3研磨颗粒具有使得至少90％的颗粒（数量）的颗粒，当浆料在水中，具有在约10nm至约10um范围内的粒度。

6. 发明申请

US20050072054A1 Chemical-mechanical polishing (CMP) slurry and method of planarizing computer memory disk surfaces 审中-公开
标题翻译：化学机械抛光（CMP）浆料和平面化计算机存储盘表面的方法
公开(公告)号：US20050072054A1
公开(公告)日：2005-04-07
申请号：US10713709
申请日：2003-11-14
申请人： Mingming Fang , Michael Ianiro , Don Eisenhour
发明人： Mingming Fang , Michael Ianiro , Don Eisenhour
IPC分类号： C09G1/02 , C09K3/14 , H01L21/321 , B24D3/02
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/3212
摘要： Compositions and methods for planarizing or polishing a NiP, glass, ceramic or Glass-ceramic surface in the manufacture of a computer memory disk. The polishing compositions described herein comprise (a) a liquid carrier, preferably water; (b) an abrasive; (c) purified clay; and optional additives, such as (d) a chemical accelerator or oxidizing agent; and (e) a complexing or coupling agent capable of chemically or ionically complexing with, or coupling to, the NiP, glass, ceramic, and/or glass-ceramic material removed during the polishing process. The complexing or coupling agent carries away the metal, glass, ceramic and/or glass-ceramic particles removed during polishing, to prevent the separated particles from returning to the surface from which they were removed. Also disclosed are methods of planarizing or polishing a NiP, glass, ceramic and/or glass-ceramic surface comprising contacting the surface with the compositions.
摘要翻译：用于在计算机存储盘的制造中平面化或抛光NiP，玻璃，陶瓷或玻璃陶瓷表面的组合物和方法。本文所述的抛光组合物包含（a）液体载体，优选水; （b）磨料; （c）纯化粘土; 和任选的添加剂，例如（d）化学促进剂或氧化剂; 和（e）与在抛光过程中除去的NiP，玻璃，陶瓷和/或玻璃 - 陶瓷材料化学或离子络合或耦合的络合或偶联剂。络合或偶联剂携带抛光过程中除去的金属，玻璃，陶瓷和/或玻璃 - 陶瓷颗粒，以防止分离的颗粒返回到被除去的表面。还公开了平面化或抛光NiP，玻璃，陶瓷和/或玻璃 - 陶瓷表面的方法，包括使表面与组合物接触。

7. 发明授权

US07267784B2 Chemical-mechanical polishing (CMP) slurry and method of planarizing computer memory disk surfaces 失效
标题翻译：化学机械抛光（CMP）浆料和平面化计算机存储盘表面的方法
公开(公告)号：US07267784B2
公开(公告)日：2007-09-11
申请号：US11447212
申请日：2006-06-05
申请人： Mingming Fang , Michael R. Ianiro , Don Eisenhour
发明人： Mingming Fang , Michael R. Ianiro , Don Eisenhour
IPC分类号： C09K13/00
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/3212
摘要： Compositions and methods for planarizing or polishing a surface, particularly a semiconductor wafer surface. The polishing compositions described herein comprise (a) a liquid carrier; (b) purified clay; and optional additives, such as (c) a chemical accelerator; and (d) a complexing or coupling agent capable of chemically or ionically complexing with, or coupling to, the metal and/or insulating material removed during the polishing process. The complexing or coupling agent carries away the removed metal and/or silicon dioxide insulator particles, during polishing, to prevent the separated particles from returning to the surface from which they were removed. Also disclosed are methods of planarizing or polishing a surface comprising contacting the surface with the compositions.
摘要翻译：用于平坦化或抛光表面，特别是半导体晶片表面的组合物和方法。本文所述的抛光组合物包含（a）液体载体; （b）纯化粘土; 和任选的添加剂，例如（c）化学加速剂; 和（d）能够与在抛光过程中除去的金属和/或绝缘材料化学或离子络合或耦合的络合或偶联剂。络合或偶联剂在抛光期间携带去除的金属和/或二氧化硅绝缘体颗粒，以防止分离的颗粒返回到它们被除去的表面。还公开了平面化或抛光表面的方法，包括使表面与组合物接触。

8. 发明授权

US07223156B2 Method chemical-mechanical polishing and planarizing corundum, GaAs, GaP and GaAs/GaP alloy surfaces 失效
标题翻译：方法化学机械抛光和平面化刚玉，GaAs，GaP和GaAs / GaP合金表面
公开(公告)号：US07223156B2
公开(公告)日：2007-05-29
申请号：US11131962
申请日：2005-05-18
申请人： Mingming Fang , Michael R. Ianiro , Don Eisenhour
发明人： Mingming Fang , Michael R. Ianiro , Don Eisenhour
IPC分类号： B24B1/00
CPC分类号： C09K3/1463 , C09G1/02 , C09K3/1409 , H01L21/30625 , H01L21/31053 , H01L21/3212
摘要： Compositions and methods for planarizing or polishing a corundum, GaAs, GaP or GaAs/GaP alloy surface, particularly a semiconductor wafer surface. The polishing compositions described herein comprise (a) a liquid carrier; (b) a smectite clay, preferably a sodium smectite clay; and optional additives, such as (c) CeO2, SiO2 and/or Al2O3 abrasive particles, (d) a chemical accelerator; and (e) a complexing or coupling agent capable of chemically or ionically complexing with, or coupling to, the material removed during the polishing process. The optional complexing or coupling agent carries away the removed particles, during polishing, to prevent the separated particles from returning to the surface from which they were removed. Also disclosed are methods of planarizing or polishing corundum, GaAs, GaP and GaAs/GaP alloy surfaces comprising contacting the surface with the compositions.
摘要翻译：用于平坦化或抛光刚玉，GaAs，GaP或GaAs / GaP合金表面，特别是半导体晶片表面的组合物和方法。本文所述的抛光组合物包含（a）液体载体; （b）绿土粘土，优选绿土粘土; 和任选的添加剂，例如（c）CeO 2 SiO 2 SiO 2和/或Al 2 O 3 3研磨剂颗粒，（d）化学加速剂; 和（e）能够与在抛光过程中除去的材料化学或离子络合或耦合的络合或偶联剂。任选的络合剂或偶联剂在抛光过程中携带去除的颗粒，以防止分离的颗粒返回到它们被除去的表面。还公开了平面化或抛光刚玉，GaAs，GaP和GaAs / GaP合金表面的方法，包括使表面与组合物接触。

9. 发明授权

US07112123B2 Chemical-mechanical polishing (CMP) slurry containing clay and CeO2 abrasive particles and method of planarizing surfaces 失效
标题翻译：含有粘土和CeO2磨料颗粒的化学机械抛光（CMP）浆料和平面化表面的方法
公开(公告)号：US07112123B2
公开(公告)日：2006-09-26
申请号：US10867337
申请日：2004-06-14
申请人： Mingming Fang , Michael R. Ianiro , Don Eisenhour
发明人： Mingming Fang , Michael R. Ianiro , Don Eisenhour
IPC分类号： B24B1/00
CPC分类号： C09G1/02 , C03C19/00 , C09K3/1409 , C09K3/1463 , H01L21/31053 , H01L21/3212
摘要： A composition for planarizing or polishing a surface comprising (a) a liquid carrier, and (b) solids comprising about 0.1 to about 10% by weight clay abrasive particles, and about 0.1% to about 50% by weight CeO2 particles, based on the total weight of solids in the composition, said clay and CeO2 abrasive particles having a particle size such that at least 90% of the particles (by number), when slurried in water, have a particle size in the range of about 10 nm to about 10 μm.
摘要翻译：用于平坦化或抛光表面的组合物，其包含（a）液体载体，和（b）包含约0.1至约10重量％的粘土磨料颗粒和约0.1重量％至约50重量％的CeO 2 / SUB>颗粒，基于组合物中固体的总重量，所述粘土和CeO 2 O 3研磨颗粒具有使得至少90％的颗粒（数量）的颗粒，当浆料在水中，具有在约10nm至约10um范围内的粒度。

10. 发明申请

US20050072551A1 Cope/drag interface sealing article for the metal casting industry, and method 审中-公开
标题翻译：金属铸造行业的接触/拖动接口密封件及其方法
公开(公告)号：US20050072551A1
公开(公告)日：2005-04-07
申请号：US10676603
申请日：2003-10-01
申请人： Anatoliy Sorokin , Vincent Losacco , Don Eisenhour
发明人： Anatoliy Sorokin , Vincent Losacco , Don Eisenhour
IPC分类号： B22C21/00 , B22D33/04
CPC分类号： B22C21/00
摘要： A fiber-reinforced sealing article disposed between an upper sand mold portion (cope) and lower sand mold portion (drag) to fill in, or correct irregularities in green sand molds. In casting metal shapes in a sand/binder mold, the cope and/or drag mold portions include sand compositions that are not perfectly planar surrounding the mold cavity, leaving one or more areas where the cope and drag are not in contact or otherwise provide a seal surrounding the mold cavity. The fiber-reinforced clay-containing article described herein is disposed between the cope and drag to seal the mold in one or more locations surrounding the mold cavity. The composition described herein is capable of shaping by hand, like modeling clay; and the article is preferably in the form of a continuous rope that is flexible, remains hydrated, and can be cut or broken to a desired length and disposed in area(s) where the cope and drag do not make good mating contact.
摘要翻译：一种纤维增强的密封制品，设置在上砂模部分（上模）和下砂模部分（拖）之间以填充或校正绿砂模具中的凹凸。在砂/粘合剂模具中铸造金属形状时，上模和/或拖模模具部分包括不是完全平坦的围绕模腔的砂组合物，留下一个或多个区域，其中上层和下拉不接触或以其他方式提供围绕模腔密封。本文所述的含纤维增强粘土的制品设置在上模和下拉之间，以将模具密封在围绕模腔的一个或多个位置。本文描述的组合物能够用手塑造，如造型粘土; 并且制品优选地是柔性的，保持水合的连续绳索的形式，并且可以被切割或破碎成所需长度并且设置在上下和不具有良好配合接触的区域中。

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