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1. 发明申请

US20060125670A1 Current cell and digital-to-analog converter using the same 审中-公开
标题翻译：当前单元和数模转换器使用相同
公开(公告)号：US20060125670A1
公开(公告)日：2006-06-15
申请号：US11253181
申请日：2005-10-18
申请人： Min Cho , Seung Lee , Chong Kwon , Jong Kim
发明人： Min Cho , Seung Lee , Chong Kwon , Jong Kim
IPC分类号： H03M1/66
CPC分类号： H03M1/0863 , H03K17/04106 , H03M1/742
摘要： Provided are a current cell and digital-to-analog converter (DAC) using the same. The current cell includes a current source; a first transistor transmitting a current produced from the current source to a first output node based on a first signal; a second transistor transmitting a current produced from the current source to a second output node based on a second signal; a first capacitor coupled between a gate of the first transistor and the second output node; and a second capacitor coupled between a gate of the second transistor and the first output node. A current mode DAC can improve in dynamic performance by using a plurality of current cells each having the above-described configuration.
摘要翻译：提供了使用其的当前单元和数模转换器（DAC）。当前单元包括电流源; 第一晶体管，基于第一信号将从电流源产生的电流传输到第一输出节点; 基于第二信号将从电流源产生的电流传输到第二输出节点的第二晶体管; 耦合在所述第一晶体管的栅极和所述第二输出节点之间的第一电容器; 以及耦合在所述第二晶体管的栅极和所述第一输出节点之间的第二电容器。电流模式DAC可以通过使用具有上述配置的多个当前单元来改善动态性能。

2. 发明申请

US20070132522A1 Multi-band LC resonance voltage-controlled oscillator with adjustable negative resistance cell 有权
标题翻译：具有可调负电阻单元的多频带LC谐振压控振荡器
公开(公告)号：US20070132522A1
公开(公告)日：2007-06-14
申请号：US11542288
申请日：2006-10-02
申请人： Ja Lee , Kwi Kim , Chong Kwon , Jong Kim , Sang Lee , Kyoung Cho
发明人： Ja Lee , Kwi Kim , Chong Kwon , Jong Kim , Sang Lee , Kyoung Cho
IPC分类号： H03B5/08
CPC分类号： H03B5/1228 , H03B5/1215 , H03B5/1243 , H03B5/1265 , H03B5/1271 , H03B2201/0208 , H03B2201/0266 , H03J2200/10
摘要： Provided is an LC resonance voltage-controlled oscillator (VCO) used for a multi-band multi-mode wireless transceiver. In order to generate a multi-band frequency, a capacitor bank and a switchable inductor are included in the LC resonance voltage-controlled oscillator. The LC resonance voltage-controlled oscillator employs an adjustable emitter-degeneration negative resistance cell in place of tail current sources in order to compensate for non-uniform oscillation amplitude caused by the capacitor bank and prevent the degradation of a phase noise due to the tail current sources. The LC resonance voltage-controlled oscillator includes an inductor providing an inductance element partially determining the frequency of an oscillation wave; a discrete capacitor bank providing a capacitance element partially determining the frequency of the oscillation wave and being discretely determined by a control bit signal; and a discrete negative resistance cell providing a negative resistance element that is discretely determined by the control bit signal, to keep the amplitude of the oscillation wave constant.
摘要翻译：提供了一种用于多频带多模无线收发器的LC谐振压控振荡器（VCO）。为了产生多频带频率，LC谐振压控振荡器中包括电容器组和可切换电感器。 LC谐振压控振荡器代替尾电流源采用可调发射极 - 退化负电阻电池，以补偿由电容器组引起的不均匀振荡幅度，并防止由于尾电流导致的相位噪声的降低来源。 LC谐振电压控制振荡器包括：电感器，其提供部分地确定振荡波频率的电感元件; 分立电容器组，提供部分地确定振荡波的频率并由控制位信号离散地确定的电容元件; 以及提供由控制位信号离散地确定的负电阻元件的离散负电阻单元，以保持振荡波的幅度恒定。

3. 发明申请

US20070132515A1 Wide-band multimode frequency synthesizer and variable frequency divider 有权
标题翻译：宽带多模频率合成器和可变分频器
公开(公告)号：US20070132515A1
公开(公告)日：2007-06-14
申请号：US11634004
申请日：2006-12-05
申请人： Ja Lee , Kwi Kim , Chong Kwon , Jong Kim , Sang Lee
发明人： Ja Lee , Kwi Kim , Chong Kwon , Jong Kim , Sang Lee
IPC分类号： H03L7/085
CPC分类号： H03K23/667 , H03L7/0898 , H03L7/093 , H03L7/099 , H03L7/193
摘要： A wide-band multimode frequency synthesizer using a Phase Locked Loop (PLL) is provided. The multiband frequency synthesizer includes a multimode prescaler, a phase detector/a charge pump, a swallow type frequency divider, and a switching bank LC tuning voltage-controlled oscillator having wide-band and low phase noise characteristics. The multimode prescaler operates in five modes and divides a signal up to 12 GHz. The wide-band frequency synthesizer can be used in various fields such as WLAN/HYPERLAN/DSRC/UWB systems that operate in the frequency range from 2 GHz to 9 GHz. The wide-band multimode frequency synthesizer includes a frequency/phase detector for comparing a frequency and phase of a reference high-frequency signal with a frequency and phase of a feedback high-frequency signal; a charge pump for producing an output current corresponding to the result of the comparison performed by the frequency/phase detector; a loop filter for producing an output voltage corresponding to an accumulated value of the output current of the charge pump; a voltage-controlled oscillator for generating an oscillation signal having a frequency corresponding to the output voltage of the loop filter; and a variable frequency divider for dividing an output signal of the voltage-controlled oscillator by a designated integer value, and outputting the result as a feedback signal, wherein at lease two of an amount of unit pumping charges of the charge pump, an RLC value of the loop filter, an RLC value of the voltage-controlled oscillator, and a divisor value of the variable frequency divider are controlled according to a band.
摘要翻译：提供了使用锁相环（PLL）的宽带多模频率合成器。多频率频率合成器包括多模预分频器，相位检测器/电荷泵，燕子式分频器和具有宽带和低相位噪声特性的开关组LC调谐压控振荡器。多模预分频器以五种模式工作，并将信号分为12 GHz。宽带频率合成器可用于各种领域，例如在2 GHz至9 GHz频率范围内工作的WLAN / HYPERLAN / DSRC / UWB系统。宽带多模频率合成器包括用于将参考高频信号的频率和相位与反馈高频信号的频率和相位进行比较的频率/相位检测器; 用于产生与由频率/相位检测器执行的比较结果相对应的输出电流的电荷泵; 环路滤波器，用于产生与电荷泵的输出电流的累积值相对应的输出电压; 用于产生具有与环路滤波器的输出电压对应的频率的振荡信号的压控振荡器; 以及可变分频器，用于将压控振荡器的输出信号除以指定的整数值，并输出该结果作为反馈信号，其中至少两个电荷泵的单位泵送电荷，RLC值根据频带控制环路滤波器的电压控制振荡器的RLC值和可变分频器的除数值。

4. 发明申请

US20070131965A1 Triple-well low-voltage-triggered ESD protection device 审中-公开
标题翻译：三重低电压触发ESD保护装置
公开(公告)号：US20070131965A1
公开(公告)日：2007-06-14
申请号：US11634926
申请日：2006-12-07
申请人： Kwi Kim , Chong Kwon , Jong Kim , Young Koo
发明人： Kwi Kim , Chong Kwon , Jong Kim , Young Koo
IPC分类号： H02H9/00
CPC分类号： H01L27/0262 , H01L29/7436
摘要： An ESD protection device with a silicon controlled rectifier (SCR) structure which is applied to a nano-device-based high-speed I/O interface circuit and semiconductor substrate operated by a low power voltage. The triple-well low-voltage-triggered ESD protection device includes: a deep n-type well formed on a p-type substrate; n- and p-type wells formed to be mutually connected in the deep n-type well; and a bias application region for applying a direct bias voltage to the p-type well.
摘要翻译：具有可控硅整流器（SCR）结构的ESD保护器件，其被施加到基于纳米器件的高速I / O接口电路和由低功率电压操作的半导体衬底。三阱低压触发ESD保护器件包括：在p型衬底上形成的深n型阱; 形成在深n型井中相互连接的n型和p型阱; 以及用于向p型阱施加直接偏置电压的偏置施加区域。

5. 发明申请

US20060125016A1 Electrostatic discharge protection circuit using triple welled silicon controlled rectifier 有权
标题翻译：静电放电保护电路采用三芯硅控整流器
公开(公告)号：US20060125016A1
公开(公告)日：2006-06-15
申请号：US11294255
申请日：2005-12-05
申请人： Kwi Kim , Chong Kwon , Jong Kim
发明人： Kwi Kim , Chong Kwon , Jong Kim
IPC分类号： H01L23/62
CPC分类号： H01L29/7436 , H01L29/749 , H01L29/87 , H01L2924/0002 , H01L2924/00
摘要： Provided is an electrostatic discharge (ESD) protection circuit using a silicon controlled rectifier (SCR), which is applied to a semiconductor integrated circuit (IC). A semiconductor substrate has a triple well structure such that a bias is applied to a p-well corresponding to a substrate of a ggNMOS device. Thus, a trigger voltage of the SCR is reduced. In addition, two discharge paths are formed using two SCRs comprised of PNP and NPN bipolar transistors, with the result that the ESD protection circuit can have great discharge capacity.
摘要翻译：提供了一种应用于半导体集成电路（IC）的使用可控硅整流器（SCR）的静电放电（ESD）保护电路。半导体衬底具有三重阱结构，使得偏置被施加到对应于ggNMOS器件的衬底的p阱。因此，SCR的触发电压降低。此外，使用由PNP和NPN双极晶体管组成的两个SCR形成两个放电路径，结果是ESD保护电路可以具有很高的放电容量。

6. 发明申请

US20060125054A1 Electrostatic discharge protection circuit using zener triggered silicon controlled rectifier 审中-公开
标题翻译：使用齐纳触发的可控硅整流器的静电放电保护电路
公开(公告)号：US20060125054A1
公开(公告)日：2006-06-15
申请号：US11302596
申请日：2005-12-13
申请人： Kwi Kim , Chong Kwon , Jong Kim
发明人： Kwi Kim , Chong Kwon , Jong Kim
IPC分类号： H01L29/167
CPC分类号： H01L27/0262 , H01L29/87
摘要： Provided is an electrostatic discharge (ESD) protection circuit using a silicon controlled rectifier (SCR), which is applied to a semiconductor integrated circuit (IC). The ESD protection circuit using an SCR includes: a semiconductor substrate including a first well and a second well; first and second heavily doped regions disposed in an upper portion of the first well; third and fourth heavily doped regions disposed in an upper portion of the second well; a fifth heavily doped region disposed at an interface between the first and second wells; a sixth heavily doped region disposed beside the fifth heavily doped region in the upper portion of the second well; a first overload preventing unit having a drain connected to the sixth heavily doped region, a source connected to the first and second heavily doped regions, and a gate connected to the first and second heavily doped regions through a first resistor; and a second overload preventing unit having a drain connected to the fifth heavily doped region, a source connected to the third and fourth heavily doped regions, and a gate connected to the third and fourth heavily doped regions through a second resistor.
摘要翻译：提供了一种应用于半导体集成电路（IC）的使用可控硅整流器（SCR）的静电放电（ESD）保护电路。使用SCR的ESD保护电路包括：包括第一阱和第二阱的半导体衬底; 第一和第二重掺杂区域设置在第一阱的上部; 第三和第四重掺杂区域设置在第二阱的上部; 设置在第一和第二阱之间的界面处的第五重掺杂区域; 第六重掺杂区域，设置在第二阱的上部的第五重掺杂区域旁边; 第一过载防止单元，其具有连接到第六重掺杂区域的漏极，连接到第一和第二重掺杂区域的源极以及通过第一电阻器连接到第一和第二重掺杂区域的栅极; 以及第二过载防止单元，其具有连接到第五重掺杂区域的漏极，连接到第三和第四重掺杂区域的源极，以及通过第二电阻器连接到第三和第四重掺杂区域的栅极。

7. 发明申请

US20050030392A1 Method for eliminating blooming streak of acquired image 审中-公开
标题翻译：消除所获取图像的花纹的方法
公开(公告)号：US20050030392A1
公开(公告)日：2005-02-10
申请号：US10645716
申请日：2003-08-07
申请人： Kujin Lee , Poong Seong , Seung Lee , Jong Kim
发明人： Kujin Lee , Poong Seong , Seung Lee , Jong Kim
IPC分类号： H04N5/359 , H04N5/217
CPC分类号： H04N5/3595 , H04N5/23238 , H04N5/247
摘要： A method for eliminating blooming streak of an acquired image is capable of eliminating blooming streaks in the acquired image photographing an object together with a light source by mutually replacing the blooming streaks in the acquired image with a partial image corresponding to the blooming streaks from other acquired image, wherein each image is acquired by cameras with changing the arrangement direction of the CCD sensors of the cameras.
摘要翻译：消除所获取图像的花纹的方法能够消除所获取的图像中与摄像对象一起的斑纹，通过相互替换所获取的图像中的花纹条纹，其中相应于来自其它所获取的花纹条纹的部分图像图像，其中通过改变相机的CCD传感器的布置方向的相机获取每个图像。

8. 发明申请

US20050105030A1 Multi-domain liquid crystal display device 有权
标题翻译：多域液晶显示装置
公开(公告)号：US20050105030A1
公开(公告)日：2005-05-19
申请号：US10938854
申请日：2004-09-13
申请人： Jeom Kim , Doo Ko , Joun Lee , Jong Kim , Jong Kim , Young Cho , Mi Chu
发明人： Jeom Kim , Doo Ko , Joun Lee , Jong Kim , Jong Kim , Young Cho , Mi Chu
IPC分类号： G02F1/1362 , G02F1/1337
CPC分类号： G02F1/136213 , G02F1/136286 , G02F2001/136218
摘要： A multi-domain liquid crystal display device comprises first and second substrates facing each other; a liquid crystal layer between the first and second substrates; a plurality of gate bus lines arranged in a first direction on the first substrate and a plurality of data bus lines arranged in a second direction on the first substrate to define a plurality of pixel region; a thin film transistor positioned at a crossing area of the data bus line and the gate bus line, the thin film transistor comprising a gate electrode, a semiconductor layer, and source/drain electrodes; a common-auxiliary electrode comprising at least one electrode in the each pixel region; a plurality of pixel electrodes electrically charged through the thin film transistor; and an alignment layer on at least one substrate between the first and second substrates.
摘要翻译：多域液晶显示装置包括彼此面对的第一和第二基板; 第一和第二基板之间的液晶层; 在第一基板上沿第一方向排列的多个栅极总线和在第一基板上沿第二方向布置的多个数据总线，以限定多个像素区域; 位于数据总线和栅极总线的交叉区域的薄膜晶体管，薄膜晶体管包括栅极，半导体层和源极/漏极; 在每个像素区域中包括至少一个电极的公共辅助电极; 通过薄膜晶体管充电的多个像素电极; 以及在所述第一和第二基板之间的至少一个基板上的取向层。

9. 发明申请

US20070004145A1 Method of manufacturing semiconductor device having recess gate structure with varying recess width for increased channel length 有权
标题翻译：制造半导体器件的方法，该半导体器件具有用于增加沟道长度的具有变化的凹槽宽度的凹陷栅极结构
公开(公告)号：US20070004145A1
公开(公告)日：2007-01-04
申请号：US11318960
申请日：2005-12-27
申请人： Jong Kim , Chang Lee , Jong Kim , Se Won
发明人： Jong Kim , Chang Lee , Jong Kim , Se Won
IPC分类号： H01L21/336
CPC分类号： H01L21/28061 , H01L21/30604 , H01L21/3065 , H01L21/3081 , H01L29/66621
摘要： A varying-width recess gate structure having a varying-width recess formed in a semiconductor device can sufficiently increase the channel length of the transistor having a gate formed in the varying-width recess, thereby effectively reducing the current leakage and improving the refresh characteristics. In the method of manufacturing the recess gate structure, etching is performed twice or more, so as to form a gate recess having varying width in the substrate, and a gate is formed in the gate recess.
摘要翻译：具有形成在半导体器件中的可变宽度凹部的变宽的凹槽栅极结构可以充分增加形成在可变宽度凹部中的栅极的晶体管的沟道长度，从而有效地减小漏电流并提高刷新特性。在制造凹槽栅结构的方法中，进行两次或更多次的蚀刻，以形成在衬底中具有变化的宽度的栅极凹槽，并且在栅极凹部中形成栅极。

10. 发明申请

US20050163734A1 Cosmetic composition having whitening effect comprising extract of pulsatilla radix as main ingredient 审中-公开
标题翻译：具有美白作用的化妆品组合物，其中含有脉comprising提取物作为主要成分
公开(公告)号：US20050163734A1
公开(公告)日：2005-07-28
申请号：US11086919
申请日：2005-03-23
申请人： Jong Kim , Hye Kim , Jong Kim
发明人： Jong Kim , Hye Kim , Jong Kim
IPC分类号： A61K8/60 , A61K8/97 , A61Q19/02 , A61K35/78 , A61K7/135
CPC分类号： A61K8/602 , A61K8/97 , A61Q19/02
摘要： Disclosed is whitening cosmetic composition comprising extract of Pulsatillae Radix as main ingredient and if necessary, additionally comprising ingredient(s) selected from the group consisting ranunculin, deoxypodophyllotoxin and 3-O-α-L-ramnopyranosyl(1→2)-[β-D-glucopyranosyl(1-4)]-α-L-arabinopyranoside(SB365) obtained from the extract of Pulsatillae Radix and auxiliary ingredient(s) selected from the group consisting extract of Ulmaceae Cortex and extract of Glycyrrhizae Radix. The present composition has an excellent whitening effect.
摘要翻译：公开了包含白头翁comprising提取物作为主要成分的美白化妆品组合物，如果需要，另外还包含选自兰古林，脱氧鬼臼毒素和3-O-α-L-雷蒙吡喃糖基（1-> 2） - [ D-吡喃葡萄糖基（1-4）]-α-L-阿拉伯吡喃糖苷（SB365），其从白头ae提取物和辅助成分中选出乌ace科皮质提取物和甘草提取物。本发明的组合物具有优异的美白效果。

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