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2. 发明申请

US20090197413A1 Polishing Composition and Polishing Method Using The Same 有权
标题翻译：抛光组合和抛光方法使用它
公开(公告)号：US20090197413A1
公开(公告)日：2009-08-06
申请号：US12362991
申请日：2009-01-30
申请人： Mikikazu SHIMIZU , Tomohiko AKATSUKA , Kazuya SUMITA
发明人： Mikikazu SHIMIZU , Tomohiko AKATSUKA , Kazuya SUMITA
IPC分类号： C09G1/14 , C09G1/02 , H01L21/304
CPC分类号： H01L21/3212 , C09G1/02
摘要： The present invention provides a polishing composition that can be suitably used in polishing of polysilicon, and a polishing method using the polishing composition. The polishing composition contains abrasive grains and an anionic surfactant having a monooxyethylene group or a polyoxyethylene group and has a pH of 9 to 12. If the anionic surfactant contained in the polishing composition has a polyoxyethylene group, the number of repeating oxyethylene units in the polyoxyethylene group is preferably 2 to 8. The anionic surfactant contained in the polishing composition can be an anionic surfactant that has a phosphate group, a carboxy group, or a sulfo group as well as a monooxyethylene group or a polyoxyethylene group. The content of the anionic surfactant in the polishing composition is preferably 20 to 500 ppm.
摘要翻译：本发明提供了可以适用于多晶硅研磨的抛光组合物和使用该抛光组合物的研磨方法。抛光组合物含有磨粒和具有单氧乙烯基或聚氧乙烯基的阴离子表面活性剂，其pH为9〜12。如果研磨用组合物中含有的阴离子表面活性剂具有聚氧乙烯基，则聚氧乙烯基团优选为2〜8。抛光组合物中所含的阴离子表面活性剂可以是具有磷酸基，羧基或磺基以及单氧乙烯基或聚氧乙烯基的阴离子表面活性剂。抛光组合物中阴离子表面活性剂的含量优选为20〜500ppm。

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