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1. 发明申请

US20130214232A1 NONVOLATILE MEMORY DEVICE USING A VARISTOR AS A CURRENT LIMITER ELEMENT 有权
标题翻译：使用VARISTOR作为当前限制元素的非易失性存储器件
公开(公告)号：US20130214232A1
公开(公告)日：2013-08-22
申请号：US13399815
申请日：2012-02-17
申请人： Mihir Tendulkar , Imran Hashim , Yun Wang
发明人： Mihir Tendulkar , Imran Hashim , Yun Wang
IPC分类号： H01L45/00
CPC分类号： H01L45/1608 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1616
摘要： Embodiments of the invention include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In some embodiments, the current limiting component comprises a varistor that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.
摘要翻译：本发明的实施例包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加设置在其中的限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。限流部件的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件的电阻式开关存储器元件中添加固定串联电阻来降低通过可变电阻层的电流。在一些实施例中，限流部件包括变阻器，其是设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。

2. 发明申请

US20130187110A1 NONVOLATILE MEMORY DEVICE USING A TUNNEL OXIDE AS A CURRENT LIMITER ELEMENT 有权
标题翻译：使用隧道氧化物作为电流限制元件的非易失性存储器件
公开(公告)号：US20130187110A1
公开(公告)日：2013-07-25
申请号：US13354006
申请日：2012-01-19
申请人： Mihir Tendulkar , Imran Hashim , Yun Wang
发明人： Mihir Tendulkar , Imran Hashim , Yun Wang
IPC分类号： H01L45/00 , H01L21/02 , B82Y99/00
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616
摘要： Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.
摘要翻译：本发明的实施例通常包括形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件的添加而具有改进的器件切换性能和寿命的电阻式开关存储元件。限流部件的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件的电阻式开关存储器元件中添加固定串联电阻来降低通过可变电阻层的电流。在一个实施例中，限流部件包括隧道氧化物，隧道氧化物是设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。

3. 发明授权

US08698119B2 Nonvolatile memory device using a tunnel oxide as a current limiter element 有权
标题翻译：使用隧道氧化物作为电流限制器元件的非易失性存储器件
公开(公告)号：US08698119B2
公开(公告)日：2014-04-15
申请号：US13354006
申请日：2012-01-19
申请人： Mihir Tendulkar , Imran Hashim , Yun Wang
发明人： Mihir Tendulkar , Imran Hashim , Yun Wang
IPC分类号： H01L29/04 , H01L47/00 , H01L21/20 , G11C11/00
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616
摘要： Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.
摘要翻译：本发明的实施例通常包括形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件的添加而具有改进的器件切换性能和寿命的电阻式开关存储元件。限流部件的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件的电阻式开关存储器元件中添加固定串联电阻来降低通过可变电阻层的电流。在一个实施例中，限流部件包括隧道氧化物，隧道氧化物是设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。

4. 发明授权

US08686386B2 Nonvolatile memory device using a varistor as a current limiter element 有权
标题翻译：使用压敏电阻作为限流元件的非易失性存储器件
公开(公告)号：US08686386B2
公开(公告)日：2014-04-01
申请号：US13399815
申请日：2012-02-17
申请人： Mihir Tendulkar , Imran Hashim , Yun Wang
发明人： Mihir Tendulkar , Imran Hashim , Yun Wang
IPC分类号： H01L29/02 , H01L47/00 , H01L29/04 , H01L29/06
CPC分类号： H01L45/1608 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1616
摘要： Embodiments of the invention include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In some embodiments, the current limiting component comprises a varistor that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.
摘要翻译：本发明的实施例包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加设置在其中的限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。限流部件的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件的电阻式开关存储器元件中添加固定串联电阻来降低通过可变电阻层的电流。在一些实施例中，限流部件包括变阻器，其是设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。

5. 发明申请

US20130200325A1 Nonvolatile Memory Device Using A Tunnel Nitride As A Current Limiter Element 有权
标题翻译：使用隧道氮化物作为限流元件的非易失性存储器件
公开(公告)号：US20130200325A1
公开(公告)日：2013-08-08
申请号：US13368118
申请日：2012-02-07
申请人： Mihir Tendulkar , Yun Wang
发明人： Mihir Tendulkar , Yun Wang
IPC分类号： H01L45/00
CPC分类号： H01L45/1608 , G11C13/0007 , G11C13/0069 , G11C2013/0078 , G11C2213/15 , G11C2213/32 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1616
摘要： Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises a resistive material that is configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel nitride that is a current limiting material that is disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.
摘要翻译：本发明的实施例通常包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。在一个实施例中，限流部件包括被配置为改善电阻式开关存储器元件的开关性能和寿命的电阻材料。电流限制层的电性能被配置为通过在电阻式开关存储元件中增加固定串联电阻来在逻辑状态编程步骤（即，“设置”和“复位”步骤）期间降低通过可变电阻层的电流存在于非易失性存储器件中。在一个实施例中，限流部件包括隧道氮化物，其是限制在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。

6. 发明申请

US20130214237A1 NONVOLATILE MEMORY DEVICE USING A TUNNEL OXIDE LAYER AND OXYGEN BLOCKING LAYER AS A CURRENT LIMITER ELEMENT 有权
标题翻译：使用隧道氧化物层和氧气阻挡层作为电流限制元件的非易失性存储器件
公开(公告)号：US20130214237A1
公开(公告)日：2013-08-22
申请号：US13399728
申请日：2012-02-17
申请人： Mihir Tendulkar , Imran Hashim , Yun Wang
发明人： Mihir Tendulkar , Imran Hashim , Yun Wang
IPC分类号： H01L47/00 , H01L21/02
CPC分类号： H01L45/08 , G11C2213/51 , H01L45/12 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/16
摘要： Embodiments of the invention include a method of forming a nonvolatile memory device that contains a resistive switching memory element with improved device switching performance and lifetime, due to the addition of a current limiting component. In one embodiment, the current limiting component comprises a resistive material configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide layer that is a current limiting material and an oxygen barrier layer that is an oxygen deficient material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.
摘要翻译：本发明的实施例包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。在一个实施例中，限流部件包括被配置为改善电阻式开关存储器元件的开关性能和寿命的电阻材料。电流限制层的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件中存在的电阻式开关存储器元件中增加固定串联电阻来降低通过可变电阻层的电流。在一个实施例中，限流部件包括作为限流材料的隧道氧化物层和作为设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的缺氧材料的氧阻挡层。

7. 发明授权

US09299926B2 Nonvolatile memory device using a tunnel oxide layer and oxygen blocking layer as a current limiter element 有权
标题翻译：使用隧道氧化物层和氧阻挡层作为限流元件的非易失性存储器件
公开(公告)号：US09299926B2
公开(公告)日：2016-03-29
申请号：US13399728
申请日：2012-02-17
申请人： Mihir Tendulkar , Imran Hashim , Yun Wang , Tim Minvielle , Takeshi Yamaguchi
发明人： Mihir Tendulkar , Imran Hashim , Yun Wang , Tim Minvielle , Takeshi Yamaguchi
IPC分类号： H01L21/02 , H01L45/00
CPC分类号： H01L45/08 , G11C2213/51 , H01L45/12 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/16
摘要： Embodiments of the invention include a method of forming a nonvolatile memory device that contains a resistive switching memory element with improved device switching performance and lifetime, due to the addition of a current limiting component. In one embodiment, the current limiting component comprises a resistive material configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide layer that is a current limiting material and an oxygen barrier layer that is an oxygen deficient material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.
摘要翻译：本发明的实施例包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。在一个实施例中，限流部件包括被配置为改善电阻式开关存储器元件的开关性能和寿命的电阻材料。电流限制层的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件中存在的电阻式开关存储器元件中增加固定串联电阻来降低通过可变电阻层的电流。在一个实施例中，限流部件包括作为限流材料的隧道氧化物层和作为设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的缺氧材料的氧阻挡层。

8. 发明授权

US08552413B2 Nonvolatile memory device using a tunnel nitride as a current limiter element 有权
标题翻译：使用隧道氮化物作为限流元件的非易失性存储器件
公开(公告)号：US08552413B2
公开(公告)日：2013-10-08
申请号：US13368118
申请日：2012-02-07
申请人： Mihir Tendulkar , Tim Minvielle , Yun Wang , Takeshi Yamaguchi
发明人： Mihir Tendulkar , Tim Minvielle , Yun Wang , Takeshi Yamaguchi
IPC分类号： H01L29/02
CPC分类号： H01L45/1608 , G11C13/0007 , G11C13/0069 , G11C2013/0078 , G11C2213/15 , G11C2213/32 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1616
摘要： Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises a resistive material that is configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel nitride that is a current limiting material that is disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.
摘要翻译：本发明的实施例通常包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。在一个实施例中，限流部件包括被配置为改善电阻式开关存储器元件的开关性能和寿命的电阻材料。电流限制层的电性能被配置为通过在电阻式开关存储元件中增加固定串联电阻来在逻辑状态编程步骤（即，“设置”和“复位”步骤）期间降低通过可变电阻层的电流存在于非易失性存储器件中。在一个实施例中，限流部件包括隧道氮化物，其是限制在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。

9. 发明授权

US08779407B2 Multifunctional electrode 有权
公开(公告)号：US08779407B2
公开(公告)日：2014-07-15
申请号：US13367662
申请日：2012-02-07
申请人： Hieu Pham , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Yun Wang , Hong Sheng Yang
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Dipankar Pramanik , Yun Wang , Hong Sheng Yang
IPC分类号： H01L29/02
CPC分类号： C23C14/345 , C23C14/0042 , C23C14/0641 , C23C14/083 , C23C14/225 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1616 , H01L45/1625
摘要： A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.

10. 发明授权

US08683420B2 Method and system of improved reliability testing 有权
标题翻译：改进可靠性测试方法和系统
公开(公告)号：US08683420B2
公开(公告)日：2014-03-25
申请号：US12948257
申请日：2010-11-17
申请人： Yun Wang , Tony P. Chiang , Ryan Clarke , Chi-I Lang , Yoram Schwarz
发明人： Yun Wang , Tony P. Chiang , Ryan Clarke , Chi-I Lang , Yoram Schwarz
IPC分类号： G06F17/50
CPC分类号： H01L22/14
摘要： A method and system of improved reliability testing includes providing a first substrate and a second substrate, each substrate comprising only a first metallization layer; processing regions on a first substrate by combinatorially varying at least one of materials, unit processes, and process sequences; performing a first reliability test on the processed regions on the first substrate to generate first results; processing regions on a second substrate in a combinatorial manner by varying at least one of materials, unit processes, and process sequences based on the first results of the first reliability test; performing a second reliability test on the processed regions on the second substrate to generate second results; and determining whether the first substrate and the second substrate meet a predetermined quality threshold based on the second results.
摘要翻译：改进的可靠性测试的方法和系统包括提供第一衬底和第二衬底，每个衬底仅包括第一金属化层; 通过组合地改变材料，单元过程和工艺顺序中的至少一个来处理第一衬底上的处理区域; 对所述第一基板上的所述经处理区域进行第一可靠性测试以产生第一结果; 基于第一可靠性测试的第一结果，通过改变材料，单元过程和过程序列中的至少一个来以组合的方式处理第二基板上的区域; 对所述第二基板上的所述经处理区域进行第二可靠性测试以产生第二结果; 以及基于所述第二结果来确定所述第一基板和所述第二基板是否满足预定质量阈值。

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