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1. 发明授权

US06452761B1 Magneto-resistive and spin-valve sensor gap with reduced thickness and high thermal conductivity 失效
标题翻译：磁阻和自旋阀传感器间隙具有减小的厚度和高导热性
公开(公告)号：US06452761B1
公开(公告)日：2002-09-17
申请号：US09483087
申请日：2000-01-14
申请人： Matthew Joseph Carey , Jeffrey Robinson Childress , Robert Edward Fontana, Jr. , Bruce Alvin Gurney , Stuart Stephen Papworth-Parkin , Ren Xu
发明人： Matthew Joseph Carey , Jeffrey Robinson Childress , Robert Edward Fontana, Jr. , Bruce Alvin Gurney , Stuart Stephen Papworth-Parkin , Ren Xu
IPC分类号： G11B533
CPC分类号： B82Y10/00 , G11B5/3103 , G11B5/3106 , G11B5/3133 , G11B5/3903 , G11B5/40 , Y10T29/49043
摘要： The current invention provides for magnetic sensor devices with reduced gap thickness and improved thermal conductivity. Gap structures of the current invention are integrated in laminated Magneto-Resistive and Spin-Valve sensors used in magnetic data storage systems. The gap structures are produced by depositing metal layers and oxidizing portions of or all of the metal layers to form thin high quality oxidized metal dielectric separator layers. The oxidized metal layer provides for excellent electrical insulation of the sensor element and any remaining metallic portions of the metal layers provide a thermally conducting pathway to assist the dissipation of heat generated by the sensor element. Because of the combined qualities of electrical insulation and thermal conductivity, magnetic sensor devices of this invention can be made with thinner gap structures and operated at higher drive currents. Further, oxidized metal layers provide suitable surfaces to growing oxidized metal gap insulator layers of any thickness.
摘要翻译：本发明提供了具有减小的间隙厚度和改善的导热性的磁传感器装置。本发明的间隙结构集成在磁数据存储系统中使用的层压磁阻和旋转阀传感器中。通过沉积金属层和氧化金属层的全部或全部以形成薄的高质量的氧化金属介电隔离层来产生间隙结构。氧化的金属层提供传感器元件的优异的电绝缘性，并且金属层的任何剩余的金属部分提供导热通路，以帮助消散由传感器元件产生的热量。由于电绝缘和导热性的综合特性，本发明的磁传感器装置可以用较薄的间隙结构制成，并在较高的驱动电流下工作。此外，氧化的金属层为任何厚度的生长的氧化金属间隙绝缘体层提供合适的表面。

2. 发明授权

US06542341B1 Magnetic sensors having an antiferromagnetic layer exchange-coupled to a free layer 失效
标题翻译：具有与自由层交换耦合的反铁磁层的磁性传感器
公开(公告)号：US06542341B1
公开(公告)日：2003-04-01
申请号：US09443039
申请日：1999-11-18
申请人： Matthew Joseph Carey , Jeffrey Robinson Childress , Bruce Alvin Gurney
发明人： Matthew Joseph Carey , Jeffrey Robinson Childress , Bruce Alvin Gurney
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996
摘要： A magnetic sensor which detects an external magnetic field with the aid of a ferromagnetic free layer having a magnetic moment responsive to the external magnetic field. The magnetic sensor has an antiferromagnetic layer which is magnetically exchange-coupled to the free layer to produce an exchange bias field He which acts on the free layer to bias its magnetic moment along a certain orientation such as the transverse direction. The additional exchange bias field He is used in balancing a total transverse internal magnetic field Ht which is due to other fields generated by the sensor itself. The value of exchange bias field He is set, e.g., by selecting a certain thickness and a certain composition of the antiferromagnetic layer. The magnetic sensor of the invention can also have a non-magnetic spacer layer interposed between the free layer and the antiferromagnetic layer or be in contact with the free layer. The sensor can be a spin valve sensor, a tunnel valve sensor, or any magnetic sensor using the free layer and the magnetoresistive effect to detect the external magnetic field.
摘要翻译：借助于具有响应于外部磁场的磁矩的铁磁自由层来检测外部磁场的磁传感器。磁传感器具有反铁磁层，其与自由层磁交换耦合，以产生交替偏置场He，其作用于自由层以沿着诸如横向方向的某个取向偏置其磁矩。额外的交换偏置场He用于平衡由传感器本身产生的其他场产生的总横向内部磁场Ht。交换偏置场He的值例如通过选择反铁磁性层的一定厚度和一定的组成来设定。本发明的磁传感器还可以具有介于自由层和反铁磁性层之间或与自由层接触的非磁性间隔层。传感器可以是自旋阀传感器，隧道阀传感器或使用自由层的磁传感器和磁阻效应来检测外部磁场。

3. 发明授权

US06686068B2 Heterogeneous spacers for CPP GMR stacks 失效
标题翻译：用于CPP GMR堆叠的非均匀间隔物
公开(公告)号：US06686068B2
公开(公告)日：2004-02-03
申请号：US09791510
申请日：2001-02-21
申请人： Matthew Joseph Carey , Jeffrey Robinson Childress , Bruce Alvin Gurney
发明人： Matthew Joseph Carey , Jeffrey Robinson Childress , Bruce Alvin Gurney
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B2005/3996 , H01F10/3227 , H01F10/3259 , H01F41/302 , Y10S428/90 , Y10T428/1107 , Y10T428/1129
摘要： A CPP magnetoresistive sensor with a spacer layer made of a heterogeneous material, which is composed of conductive grains within a highly resistive matrix, has a high resistance. The conductive grains are typically made of a conductive element or alloy that can operate as a GMR spacer material. The highly resistive matrix is typically made of a highly resistive or insulating element, alloy or compound that will hinder the flow of electrons. The sensing electrical current is passed through the conductive grains, which are typically made of the same material as GMR spacers, so the GMR is maintained even though the overall resistance is increased.
摘要翻译：具有由高电阻矩阵内的导电晶粒构成的由异质材料制成的间隔层的CPP磁阻传感器具有高电阻。导电晶粒通常由可作为GMR间隔物材料操作的导电元件或合金制成。高电阻矩阵通常由阻碍电子流动的高电阻或绝缘元件，合金或化合物制成。感测电流通过导电晶粒，导电晶粒通常由与GMR间隔物相同的材料制成，因此即使总体电阻增加，也保持GMR。

4. 发明授权

US07230805B2 Semiconductor slider with an integral spin valve transistor structure and method for making same without a bonding step 有权
标题翻译：具有整体自旋阀晶体管结构的半导体滑块及其制造方法，而无需结合步骤
公开(公告)号：US07230805B2
公开(公告)日：2007-06-12
申请号：US11036238
申请日：2005-01-13
申请人： Jeffrey Robinson Childress , Robert Edward Fontana, Jr. , Jeffrey S. Lille
发明人： Jeffrey Robinson Childress , Robert Edward Fontana, Jr. , Jeffrey S. Lille
IPC分类号： G11B5/39 , H01L43/00
CPC分类号： B82Y10/00 , G11B5/102 , G11B5/3103 , G11B5/3163 , G11B5/332 , G11B5/3903 , G11B5/3967
摘要： A semiconductor slider including an integral spin valve transistor (SVT) having a read width of 250 nm or less disposed on a monolithic semiconductor. substrate, useful in magnetic data storage applications. The monolithic slider may also include other magnetic and semiconductor transistor structures and is fabricated in a single process using standard thin-film processing steps. The SVT includes a sensor stack having a top surface and including a first ferromagnetic (FM) layer in contact with and forming a Schottky barrier at the monolithic semiconductor substrate, a FM shield layer disposed over the sensor stack and in electrical contact with the top surface thereof, a SVT emitter terminal coupled to the FM shield, a SVT collector terminal coupled to the substrate and a SVT base terminal coupled to the first FM layer. The sensor stack may include a spin valve (SV) stack or a tunnel valve (TV) stack, for example.
摘要翻译：一种半导体滑块，其包括设置在单片半导体上的读宽度为250nm或更小的整体自旋阀晶体管（SVT）。基板，可用于磁数据存储应用。单片滑块还可以包括其它磁性和半导体晶体管结构，并且使用标准薄膜处理步骤在单个工艺中制造。 SVT包括具有顶表面并且包括在单片半导体衬底处接触并形成肖特基势垒的第一铁磁（FM）层的传感器堆叠，设置在传感器堆叠上方并与顶表面电接触的FM屏蔽层耦合到FM屏蔽的SVT发射极端子，耦合到衬底的SVT集电极端子和耦合到第一FM层的SVT基极端子。传感器堆叠可以包括例如自旋阀（SV）堆叠或隧道阀（TV）堆叠。

5. 发明授权

US06870717B2 Semiconductor slider with an integral spin valve transistor structure and method for making same without a bonding step 失效
标题翻译：具有整体自旋阀晶体管结构的半导体滑块及其制造方法，而无需结合步骤
公开(公告)号：US06870717B2
公开(公告)日：2005-03-22
申请号：US10150189
申请日：2002-05-16
申请人： Jeffrey Robinson Childress , Robert Edward Fontana, Jr. , Jeffrey S. Lille
发明人： Jeffrey Robinson Childress , Robert Edward Fontana, Jr. , Jeffrey S. Lille
IPC分类号： G11B5/10 , G11B5/31 , G11B5/33 , G11B5/39 , H01L29/82
CPC分类号： B82Y10/00 , G11B5/102 , G11B5/3103 , G11B5/3163 , G11B5/332 , G11B5/3903 , G11B5/3967
摘要： A semiconductor slider including an integral spin valve transistor (SVT) having a read width of 250 nm or less disposed on a monolithic semiconductor substrate, useful in magnetic data storage applications. The monolithic slider may also include other magnetic and semiconductor transistor structures and is fabricated in a single process using standard thin-film processing steps. The SVT includes a sensor stack having a top surface and including a first ferromagnetic (FM) layer in contact with and forming a Schottky barrier at the monolithic semiconductor substrate, a FM shield layer disposed over the sensor stack and in electrical contact with the top surface thereof, a SVT emitter terminal coupled to the FM shield, a SVT collector terminal coupled to the substrate and a SVT base terminal coupled to the first FM layer. The sensor stack may include a spin valve (SV) stack or a tunnel valve (TV) stack, for example.
摘要翻译：一种半导体滑块，其包括设置在单片半导体衬底上的读宽度为250nm或更小的整体自旋阀晶体管（SVT），可用于磁数据存储应用。单片滑块还可以包括其它磁性和半导体晶体管结构，并且使用标准薄膜处理步骤在单个工艺中制造。 SVT包括具有顶表面并且包括在单片半导体衬底处接触并形成肖特基势垒的第一铁磁（FM）层的传感器堆叠，设置在传感器堆叠上方并与顶表面电接触的FM屏蔽层耦合到FM屏蔽的SVT发射极端子，耦合到衬底的SVT集电极端子和耦合到第一FM层的SVT基极端子。传感器堆叠可以包括例如自旋阀（SV）堆叠或隧道阀（TV）堆叠。

6. 发明授权

US06577476B1 Flux guide structure for a spin valve transistor which includes a slider body semiconductor layer 有权
标题翻译：包括滑块体半导体层的自旋阀晶体管的通量引导结构
公开(公告)号：US06577476B1
公开(公告)日：2003-06-10
申请号：US10108688
申请日：2002-03-28
申请人： Jeffrey Robinson Childress , Robert Edward Fontana, Jr. , Jeffrey Scott Lille
发明人： Jeffrey Robinson Childress , Robert Edward Fontana, Jr. , Jeffrey Scott Lille
IPC分类号： G11B539
CPC分类号： B82Y10/00 , G01R33/06 , G11B5/012 , G11B5/3106 , G11B5/332
摘要： A spin valve transistor (SVT) for a magnetic head and a method of making the same are described. A slider of a disk drive is formed of a semiconductor material, such as silicon. A free layer is formed over the semiconductor material and a magnetic pinned layer is formed over a portion of the free layer. The free layer has an edge that is substantially flush with an air bearing surface (ABS) between the magnetic head and the disk, whereas the magnetic pinned layer has an edge that is recessed away from the ABS. Advantageously, since the free layer serves as a flux guiding structure for the sensor, the sensor has a thinner profile at the ABS to accommodate higher recording densities.
摘要翻译：描述了一种用于磁头的自旋阀晶体管（SVT）及其制造方法。磁盘驱动器的滑块由诸如硅的半导体材料形成。在半导体材料上形成自由层，并且在自由层的一部分上形成磁性被钉扎层。自由层具有与磁头和盘之间的空气支承表面（ABS）基本齐平的边缘，而磁性钉扎层具有远离ABS凹进的边缘。有利地，由于自由层用作传感器的通量引导结构，传感器在ABS处具有更薄的轮廓以适应较高的记录密度。

7. 发明授权

US08004374B2 Increased anisotropy induced by direct ion etch for telecommunications/electronics devices 有权
标题翻译：通过电子/电子设备的直接离子蚀刻引起的各向异性增加
公开(公告)号：US08004374B2
公开(公告)日：2011-08-23
申请号：US11845239
申请日：2007-08-27
申请人： Matthew Joseph Carey , Jeffrey Robinson Childress , Stefan Maat
发明人： Matthew Joseph Carey , Jeffrey Robinson Childress , Stefan Maat
IPC分类号： H03H7/01 , H01P1/20
CPC分类号： G11B5/3166 , G11B5/3163 , G11B5/3196 , G11B5/3932 , G11C11/14 , H01L43/12 , Y10T29/49075
摘要： A microwave bandstop filter having a magnetic strip formed over dielectric material. The magnetic resonant frequency is controlled by an induced magnetic anisotropy in the magnetic strip of the microwave bandstop filter. The magnetic anisotropy field is induced by an anisotropic surface texture formed on the surface of the magnetic strip itself, or formed on an underlying layer. Alternatively, the anisotropic surface texture could be formed on both an underlying layer and on the magnetic strip itself. This induced magnetic anisotropy field allows the resonant frequency of the microwave filter to be controlled over a wide frequency range and make high frequency operation possible without reliance on the application of an externally applied magnetic field.
摘要翻译：一种微波带阻滤波器，其具有在电介质材料上形成的磁条。磁共振频率由微波带阻滤波器的磁条中的感应磁各向异性控制。磁各向异性场由形成在磁条本身的表面上的各向异性表面纹理引起，或形成在下层上。或者，各向异性表面纹理可以形成在下层和磁条本身上。该感应磁各向异性场允许微波滤波器的谐振频率在宽的频率范围内被控制，并且可以在不依赖外部施加的磁场的情况下进行高频运行。

8. 发明授权

US07460343B2 Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer 失效
标题翻译：使用倾斜蚀刻底层的磁性读取传感器，用于在硬磁堆叠偏压层中诱导单轴磁各向异性
公开(公告)号：US07460343B2
公开(公告)日：2008-12-02
申请号：US11097638
申请日：2005-03-31
申请人： Matthew Joseph Carey , Jeffrey Robinson Childress , Eric Edward Fullerton , Stefan Maat
发明人： Matthew Joseph Carey , Jeffrey Robinson Childress , Eric Edward Fullerton , Stefan Maat
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y25/00 , B82Y40/00 , H01F10/16 , H01F10/30 , H01F10/3272 , H01F10/3286 , H01F41/308 , H01L43/08
摘要： A magnetoresistive sensor having an in stack bias layer with an engineered magnetic anisotropy in a direction parallel with the medium facing surface. The in-stack bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to form anisotropic roughness in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic in-stack bias layer deposited thereover.
摘要翻译：磁阻传感器具有在与介质面向表面平行的方向上具有工程磁各向异性的堆叠偏置层。叠层偏置层可以由CoPt，CoPtCr或一些其它磁性材料构成，并且沉积在已被离子束蚀刻的底层上。已经以相对于正常的角度执行离子束蚀刻，以便形成定向的波纹或小面的各向异性的粗糙度。各向异性粗糙度在其上沉积的硬磁堆叠偏压层中引起基本平行于面向介质的表面的单轴磁各向异性。

9. 发明申请

US20090168269A1 CURRENT PERPENDICULAR TO PLANE SPIN VALVE WITH HIGH-POLARIZATION MATERIAL IN AP1 LAYER FOR REDUCED SPIN TORQUE 审中-公开
标题翻译：在AP1层平面旋转阀的平面旋转阀用于减少旋转扭矩的当前
公开(公告)号：US20090168269A1
公开(公告)日：2009-07-02
申请号：US11966017
申请日：2007-12-28
申请人： Matthew Joseph Carey , Jeffrey Robinson Childress , Stefan Maat , Neil Smith
发明人： Matthew Joseph Carey , Jeffrey Robinson Childress , Stefan Maat , Neil Smith
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/132 , H01F10/3272
摘要： A current perpendicular to plane magnetoresistive sensor having improved resistance amplitude change and reduced spin torque noise. The sensor has an antiparallel coupled pinned layer structure with at least one of the layers of the pinned layer structure includes a high spin polarization material such as Co2FeGe. The sensor can also include an antiparallel coupled free layer.
摘要翻译：垂直于平面磁阻传感器的电流具有改善的电阻幅度变化和减少的自旋转矩噪声。传感器具有反平行耦合的钉扎层结构，其中被钉扎层结构的至少一个层包括诸如Co 2 FeGe的高自旋极化材料。传感器还可以包括反平行耦合的自由层。

10. 发明授权

US07457085B2 Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers 失效
标题翻译：使用倾斜蚀刻底层的磁性读取传感器，用于诱导硬磁偏置层中的单轴磁各向异性
公开(公告)号：US07457085B2
公开(公告)日：2008-11-25
申请号：US11096636
申请日：2005-03-31
申请人： Matthew Joseph Carey , Jeffrey Robinson Childress , Eric Edward Fullerton , Stefan Maat
发明人： Matthew Joseph Carey , Jeffrey Robinson Childress , Eric Edward Fullerton , Stefan Maat
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , G11B5/3932 , H01F10/16 , H01F10/30 , H01F10/3272 , H01F41/306 , H01L43/08 , H01L43/12
摘要： A magnetoresistive sensor having a hard bias layer with an engineered magnetic anisotropy in a direction substantially parallel with the medium facing surface. The hard bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness on its surface for example in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic bias layers deposited there over.
摘要翻译：磁阻传感器具有在与介质面对表面基本平行的方向上具有工程磁各向异性的硬偏置层。硬偏置层可以由CoPt，CoPtCr或一些其它磁性材料构成，并且被沉积在已被离子束蚀刻的底层上。已经以相对于正常的角度执行离子束蚀刻，以便在其表面上引起各向异性的粗糙度，例如以定向的波纹或小面的形式。各向异性粗糙度在其上沉积的硬磁偏置层中引起基本平行于面向介质的表面的单轴磁各向异性。

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