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1. 发明授权

US08202677B2 Chemically-amplified positive resist composition and patterning process thereof 有权
标题翻译：化学扩增的正型抗蚀剂组合物及其构图工艺
公开(公告)号：US08202677B2
公开(公告)日：2012-06-19
申请号：US12457327
申请日：2009-06-08
申请人： Takanobu Takeda , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi , Takeshi Kinsho
发明人： Takanobu Takeda , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi , Takeshi Kinsho
IPC分类号： G03F7/00 , G03F7/04 , G03F7/028 , G03F7/40
CPC分类号： G03F7/0395 , G03F7/0045 , G03F7/0392 , Y10S430/114
摘要： There is disclosed a chemically-amplified positive resist composition comprising, as main components, (A) a base polymer, which contains one or more kinds of a monomer unit represented by the following general formula (1) and the like, and is an alkali-insoluble polymer whose hydroxyl group is partly protected by an acetal group while alkali-soluble when deprotected by an acid catalyst, (B) a sulfonium salt containing a sulfonate anion, (C) a basic component, and (D) an organic solvent. In a lithography technology by a photo resist, an extremely high temporal stability is necessary. In addition, it must give a good pattern profile not dependent on a substrate and have a high resolution power. There can be provided a chemically-amplified positive resist composition which can solve these problems simultaneously, a resist patterning process using the same, and a method for producing a photo mask blank.
摘要翻译：公开了一种化学增幅正型抗蚀剂组合物，其包含作为主要成分的（A）基质聚合物，其包含一种或多种由以下通式（1）表示的单体单元等，并且为碱（B）含有磺酸根阴离子的锍盐，（C）碱性成分和（D）有机溶剂，其羟基部分被缩醛基保护而碱溶性的不溶性聚合物。在通过光刻胶的光刻技术中，需要非常高的时间稳定性。另外，它必须给出不依赖于衬底并且具有高分辨率功率的良好图案轮廓。可以提供能够同时解决这些问题的化学放大正性抗蚀剂组合物，使用其的抗蚀剂图案形成工艺以及制造光掩模坯料的方法。

2. 发明授权

US08691490B2 Sulfonium salt, polymer, method for producing the polymer, resist composition and patterning process 有权
标题翻译：锍盐，聚合物，聚合物的制造方法，抗蚀剂组合物和图案化工艺
公开(公告)号：US08691490B2
公开(公告)日：2014-04-08
申请号：US13013506
申请日：2011-01-25
申请人： Masaki Ohashi , Satoshi Watanabe , Youichi Ohsawa , Keiichi Masunaga , Takeshi Kinsho
发明人： Masaki Ohashi , Satoshi Watanabe , Youichi Ohsawa , Keiichi Masunaga , Takeshi Kinsho
IPC分类号： G03F7/004 , C07C69/54 , C07C309/67
CPC分类号： C07C69/54 , C08F220/38 , G03F7/004 , G03F7/20
摘要： There is disclosed a sulfonium salt represented by the following general formula (1). In the formula, X and Y each represents a group having a polymerizable functional group; Z represents a divalent hydrocarbon group having 1 to 33 carbon atoms optionally containing a hetero atom; R1 represents a divalent hydrocarbon group having 1 to 36 carbon atoms optionally containing a hetero atom; and R2 and R3 each represents a monovalent hydrocarbon group having 1 to 30 carbon atoms optionally containing a hetero atom or R2 and R3 may be bonded with each other to form a ring together with a sulfur atom in the formula. There can be provided a sulfonium salt usable as a resist composition providing high resolution and excellent in LER in photolithography using a high energy beam such as an ArF excimer laser, an EUV light and an electron beam as a light source, a polymer obtained from the sulfonium salt, a resist composition containing the polymer and a patterning process using the resist composition.
摘要翻译：公开了由以下通式（1）表示的锍盐。在该式中，X和Y各自表示具有聚合性官能团的基团， Z表示任选含有杂原子的碳原子数1〜33的二价烃基; R1表示任选含有杂原子的碳原子数1〜36的二价烃基; R 2和R 3各自表示可以含有杂原子的具有1〜30个碳原子的一价烃基，或者R 2和R 3可以相互结合，与式中的硫原子一起形成环。可以提供可用作抗蚀剂组合物的锍盐，其使用诸如ArF准分子激光器，EUV光和电子束作为光源的高能束在光刻中提供高分辨率和优异的LER，从锍盐，含有聚合物的抗蚀剂组合物和使用该抗蚀剂组合物的图案化工艺。

3. 发明授权

US08394570B2 Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process 有权
标题翻译：锍盐，酸发生剂，抗蚀剂组合物，光掩模坯料和图案化工艺
公开(公告)号：US08394570B2
公开(公告)日：2013-03-12
申请号：US12630559
申请日：2009-12-03
申请人： Masaki Ohashi , Takeshi Kinsho , Satoshi Watanabe , Youichi Ohsawa
发明人： Masaki Ohashi , Takeshi Kinsho , Satoshi Watanabe , Youichi Ohsawa
IPC分类号： G03F1/00 , G03F7/00 , C07C309/00
CPC分类号： C07J3/00 , C07C309/12 , C07C381/12 , C07C2601/14 , C07C2603/74 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397
摘要： A sulfonium salt has formula (1) wherein R1 is a monovalent hydrocarbon group except vinyl and isopropenyl, R2, R3, and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl or may bond together to form a ring with the sulfur atom, and n is 1 to 3. A chemically amplified resist composition comprising the sulfonium salt is capable of forming a fine feature pattern of good profile after development due to high resolution, improved focal latitude, and minimized line width variation and profile degradation upon prolonged PED.
摘要翻译：锍盐具有式（1），其中R 1是除乙烯基和异丙烯基之外的一价烃基，R 2，R 3和R 4是烷基，烯基，氧代烷基，芳基，芳烷基或芳氧基烷基，或者可以键合在一起形成与硫原子的环，并且n为1至3.包含锍盐的化学放大抗蚀剂组合物由于高分辨率，改善的焦点纬度以及在延长的PED处的线宽变化和轮廓退化最小化而能够在显影后形成良好轮廓的精细特征图案。

4. 发明申请

US20100009286A1 Chemically-amplified positive resist composition and patterning process thereof 有权
标题翻译：化学扩增的正型抗蚀剂组合物及其构图工艺
公开(公告)号：US20100009286A1
公开(公告)日：2010-01-14
申请号：US12457327
申请日：2009-06-08
申请人： Takanobu Takeda , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi , Takeshi Kinsho
发明人： Takanobu Takeda , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi , Takeshi Kinsho
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0395 , G03F7/0045 , G03F7/0392 , Y10S430/114
摘要： There is disclosed a chemically-amplified positive resist composition comprising, as main components, (A) a base polymer, which contains one or more kinds of a monomer unit represented by the following general formula (1) and the like, and is an alkali-insoluble polymer whose hydroxyl group is partly protected by an acetal group while alkali-soluble when deprotected by an acid catalyst, (B) a sulfonium salt containing a sulfonate anion, (C) a basic component, and (D) an organic solvent. In a lithography technology by a photo resist, an extremely high temporal stability is necessary. In addition, it must give a good pattern profile not dependent on a substrate and have a high resolution power. There can be provided a chemically-amplified positive resist composition which can solve these problems simultaneously, a resist patterning process using the same, and a method for producing a photo mask blank.
摘要翻译：公开了一种化学增幅正型抗蚀剂组合物，其包含作为主要成分的（A）基质聚合物，其包含一种或多种由以下通式（1）表示的单体单元等，并且为碱（B）含有磺酸根阴离子的锍盐，（C）碱性成分和（D）有机溶剂，其羟基部分被缩醛基保护而碱溶性的不溶性聚合物。在通过光刻胶的光刻技术中，需要非常高的时间稳定性。另外，它必须给出不依赖于衬底并且具有高分辨率功率的良好图案轮廓。可以提供能够同时解决这些问题的化学放大正性抗蚀剂组合物，使用其的抗蚀剂图案形成工艺以及制造光掩模坯料的方法。

5. 发明授权

US08609889B2 Photoacid generator, resist composition, and patterning process 有权
标题翻译：光酸发生剂，抗蚀剂组合物和图案化工艺
公开(公告)号：US08609889B2
公开(公告)日：2013-12-17
申请号：US12828557
申请日：2010-07-01
申请人： Masaki Ohashi , Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe
发明人： Masaki Ohashi , Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe
IPC分类号： G03F7/028 , G03F7/26 , C07C309/06 , C07C309/07
CPC分类号： C07C309/12 , C07C381/12 , C07C2603/74 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： The photoacid generator produces a sulfonic acid which has a bulky cyclic structure in the sulfonate moiety and a straight-chain hydrocarbon group and thus shows a controlled acid diffusion behavior and an adequate mobility. The PAG is fully compatible with a resin to form a resist composition which performs well during the device fabrication process and solves the problems of resolution, LWR, and exposure latitude.
摘要翻译：光致酸发生剂产生在磺酸盐部分中具有大体积的环状结构的磺酸和直链烃基，因此显示受控的酸扩散行为和适当的迁移率。 PAG与树脂完全兼容以形成在器件制造过程中表现良好的抗蚀剂组合物，并解决了分辨率，LWR和曝光宽容度的问题。

6. 发明授权

US08062828B2 Positive resist composition and patterning process 有权
标题翻译：正抗蚀剂组成和图案化工艺
公开(公告)号：US08062828B2
公开(公告)日：2011-11-22
申请号：US12370652
申请日：2009-02-13
申请人： Youichi Ohsawa , Takeshi Kinsho , Masaki Ohashi , Seiichiro Tachibana , Takeru Watanabe , Jun Hatakeyama
发明人： Youichi Ohsawa , Takeshi Kinsho , Masaki Ohashi , Seiichiro Tachibana , Takeru Watanabe , Jun Hatakeyama
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/2041 , Y10S430/108 , Y10S430/111 , Y10S430/143
摘要： A positive resist composition comprises a polymer comprising recurring units having a sulfonium salt incorporated therein as a base resin which becomes soluble in alkaline developer under the action of acid. The polymer generates a strong sulfonic acid upon exposure to high-energy radiation so as to facilitate effective scission of acid labile groups in the resist composition.
摘要翻译：正型抗蚀剂组合物包含含有其中掺入其中的锍盐作为基础树脂的重复单元的聚合物，其在酸的作用下变得可溶于碱性显影剂。聚合物在暴露于高能量辐射时产生强烈的磺酸，以促进抗蚀剂组合物中酸不稳定基团的有效断裂。

7. 发明申请

US20110003247A1 PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS 有权
标题翻译：光电发生器，电阻组合和图案处理
公开(公告)号：US20110003247A1
公开(公告)日：2011-01-06
申请号：US12828557
申请日：2010-07-01
申请人： Masaki Ohashi , Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe
发明人： Masaki Ohashi , Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe
IPC分类号： G03F7/20 , G03F7/004 , C07C69/753
CPC分类号： C07C309/12 , C07C381/12 , C07C2603/74 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： The photoacid generator produces a sulfonic acid which has a bulky cyclic structure in the sulfonate moiety and a straight-chain hydrocarbon group and thus shows a controlled acid diffusion behavior and an adequate mobility. The PAG is fully compatible with a resin to form a resist composition which performs well during the device fabrication process and solves the problems of resolution, LWR, and exposure latitude.
摘要翻译：光致酸发生剂产生在磺酸盐部分中具有大体积的环状结构的磺酸和直链烃基，因此显示受控的酸扩散行为和适当的迁移率。 PAG与树脂完全兼容以形成在器件制造过程中表现良好的抗蚀剂组合物，并解决了分辨率，LWR和曝光宽容度的问题。

8. 发明申请

US20070099113A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process 有权
标题翻译：新型磺酸盐和衍生物，光酸产生剂，抗蚀剂组合物和图案化方法
公开(公告)号：US20070099113A1
公开(公告)日：2007-05-03
申请号：US11588414
申请日：2006-10-27
申请人： Katsuhiro Kobayashi , Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe , Masaki Ohashi
发明人： Katsuhiro Kobayashi , Youichi Ohsawa , Takeshi Kinsho , Takeru Watanabe , Masaki Ohashi
IPC分类号： G03C1/00
CPC分类号： G03F7/0045 , C07C309/08 , C07C381/12 , G03F7/0392 , Y10S430/114 , Y10S430/115
摘要： Sulfonate salts have the formula: CF3—CH(OH)—CF2SO3−M+ wherein M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Because of inclusion within the molecule of a hydroxyl group which is a polar group, the sulfonic acids are effective for restraining the length of acid diffusion through hydrogen bond or the like. The photoacid generators that generate these sulfonic acids perform well during the device fabrication process including coating, pre-baking, exposure, post-exposure baking, and developing steps. The photoacid generators are little affected by water left on the wafer during the ArF immersion lithography.
摘要翻译：磺酸盐具有下式：CF 3 -CH（OH）-CF 2 SO 3 SO 2 - > + +其中M + +是Li，Na，K，铵或四甲基铵离子。由于在分子内包含作为极性基团的羟基，所以磺酸对于抑制通过氢键等的酸扩散的长度是有效的。产生这些磺酸的光酸产生剂在器件制造过程中表现良好，包括涂层，预烘烤，曝光，曝光后烘烤和显影步骤。在ArF浸没光刻期间，光致酸发生器几乎不受水晶体上剩余的水分的影响。

9. 发明授权

US08105748B2 Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process 有权
标题翻译：可聚合阴离子的锍盐和聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US08105748B2
公开(公告)日：2012-01-31
申请号：US12580953
申请日：2009-10-16
申请人： Masaki Ohashi , Youichi Ohsawa , Takeshi Kinsho , Jun Hatakeyama , Seiichiro Tachibana
发明人： Masaki Ohashi , Youichi Ohsawa , Takeshi Kinsho , Jun Hatakeyama , Seiichiro Tachibana
IPC分类号： G03F7/038 , G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： C07D307/77 , C07C309/12 , C07C381/12 , C08F2220/303 , C08F2220/382 , G03F7/0045 , G03F7/0397 , G03F7/2041 , Y10S430/108 , Y10S430/111 , Y10S430/143
摘要： A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R1 is H, F, methyl or trifluoromethyl, R2, R3 and R4 are C1-C10 alkyl, alkenyl or oxoalkyl or C6-C18 aryl, aralkyl or aryloxoalkyl, or two of R2, R3 and R4 may bond together to form a ring with S, A is a C2-C20 hydrocarbon group having cyclic structure, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.
摘要翻译：提供了具有式（1）的可聚合阴离子的锍盐，其中R 1是H，F，甲基或三氟甲基，R 2，R 3和R 4是C 1 -C 10烷基，烯基或氧代烷基或C 6 -C 18芳基，芳烷基或芳氧基烷基，或 R 2，R 3和R 4中的两个可以键合在一起形成具有S的环，A是具有环状结构的C 2 -C 20烃基，n是0或1.锍盐在暴露于高温下时产生非常强的磺酸，能量辐射。还提供了包含衍生自锍盐的聚合物的抗蚀剂组合物。

10. 发明授权

US08057985B2 Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process 有权
标题翻译：可聚合阴离子的锍盐和聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US08057985B2
公开(公告)日：2011-11-15
申请号：US12549191
申请日：2009-08-27
申请人： Masaki Ohashi , Takeshi Kinsho , Youichi Ohsawa , Jun Hatakeyama , Seiichiro Tachibana
发明人： Masaki Ohashi , Takeshi Kinsho , Youichi Ohsawa , Jun Hatakeyama , Seiichiro Tachibana
IPC分类号： G03F7/038 , G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： C08F28/02 , C07C309/12 , C07C381/12 , C07C2601/14 , C07C2602/42 , C07C2603/74 , C07D493/08 , C07D493/18 , C08F20/22 , C08F20/36 , C08F20/38 , G03F7/0045 , G03F7/0046 , G03F7/0395 , G03F7/0397 , Y10S430/108 , Y10S430/111 , Y10S430/122 , Y10S430/124 , Y10S430/126 , Y10S430/143
摘要： A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R1 is H, F, methyl or trifluoromethyl, R2, R3 and R4 are C1-C10 alkyl, alkenyl or oxoalkyl or C6-C18 aryl, aralkyl or aryloxoalkyl, or two of R2, R3 and R4 may bond together to form a ring with S, A is a C1-C20 organic group, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.
摘要翻译：提供了具有式（1）的可聚合阴离子的锍盐，其中R 1是H，F，甲基或三氟甲基，R 2，R 3和R 4是C 1 -C 10烷基，烯基或氧代烷基或C 6 -C 18芳基，芳烷基或芳氧基烷基，或 R 2，R 3和R 4中的两个可以键合在一起形成具有S的环，A是C1-C20有机基团，n是0或1.锍盐在暴露于高能量辐射时产生非常强的磺酸。还提供了包含衍生自锍盐的聚合物的抗蚀剂组合物。

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