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    • 8. 发明授权
    • Non-staling gum composition and method of preparation
    • 不稳定的口香糖组合物及其制备方法
    • US4514422A
    • 1985-04-30
    • US333523
    • 1981-12-22
    • Robert YangMartin M. Rieger
    • Robert YangMartin M. Rieger
    • A23G4/00A23G4/06A23G4/08A23G4/10G11B5/716A23G3/30
    • A23G4/06A23G4/00A23G4/08A23G4/10G11B5/716
    • The present invention relates to a gum composition exhibiting improved shelf life and resistance to staling, that comprises a substantially anhydrous mixture of a gum base, at least one sugar alcohol, and glycerin, the glycerin present in an amount ranging from greater than 10% to about 18% by weight of the composition. The gum composition preferably contains no more than 2% by weight of water. The invention includes a method for preparing the gum composition, comprising treating the ingredients thereof, including the glycerin, to remove substantially all water therefrom, thereafter combining the sugar alcohol with the glycerin under agitation and at about 50.degree. C., and adding subsequently thereto the gum base, after which certain additive materials, such as flavorings, and the like may be added with mixing.
    • 本发明涉及一种口香糖组合物,其具有改善的保存期限和抗老化性能,其包括胶基,至少一种糖醇和甘油的基本上无水的混合物,所述甘油的存在量为大于10%至 约18重量%的组合物。 口香糖组合物优选含有不超过2重量%的水。 本发明包括一种制备口香糖组合物的方法,包括处理其成分,包括甘油,以从其中除去基本上所有的水,然后在搅拌和约50℃下将糖醇与甘油混合,随后加入 胶基,然后混合加入某些添加剂如调味剂等。
    • 9. 发明申请
    • High voltage semiconductor device with lateral series capacitive structure
    • 具有横向串联电容结构的高压半导体器件
    • US20070262398A1
    • 2007-11-15
    • US11801819
    • 2007-05-10
    • Mohamed DarwishRobert Yang
    • Mohamed DarwishRobert Yang
    • H01L29/76
    • H01L29/7835H01L29/0634H01L29/0692H01L29/407H01L29/66659
    • According to the present invention, semiconductor device breakdown voltage can be increased by embedding field shaping regions within a drift region of the semiconductor device. A controllable current path extends between two device terminals on the top surface of a planar substrate, and the controllable current path includes the drift region. Each field shaping region includes two or more electrically conductive regions that are electrically insulated from each other, and which are capacitively coupled to each other to form a voltage divider dividing a potential between the first and second terminals. One or more of the electrically conductive regions are isolated from any external electrical contact. Such field shaping regions can provide enhanced electric field uniformity in current-carrying parts of the drift region, thereby increasing device breakdown voltage.
    • 根据本发明,可以通过在半导体器件的漂移区域内嵌入场成形区域来增加半导体器件击穿电压。 可控电流路径在平面基板的顶表面上的两个器件端子之间延伸,并且可控电流路径包括漂移区域。 每个场整形区域包括彼此电绝缘并且彼此电容耦合以形成分压第一和第二端子之间的电势的分压器的两个或更多个导电区域。 一个或多个导电区域与任何外部电触点隔离。 这种场成形区域可以在漂移区域的载流部分中提供增强的电场均匀性,从而增加器件击穿电压。