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    • 4. 发明授权
    • Preparation of copolymers
    • 共聚物的制备
    • US06677419B1
    • 2004-01-13
    • US10293740
    • 2002-11-13
    • Phillip J. BrockEiichi KobayashiIsao NishimuraYukio NishimuraThomas I. WallowMasafumi Yamamoto
    • Phillip J. BrockEiichi KobayashiIsao NishimuraYukio NishimuraThomas I. WallowMasafumi Yamamoto
    • C08F1000
    • C08F232/08C08F220/06C08F220/18C08F220/28
    • A scaleable and high-yielding method of preparing copolymers that is useful as a component of a radiation sensitive resin composition is provided. The method includes the step of reacting at least one monomer A which is an unsaturated alicyclic monomer and forms a polymer main chain by dissociation of the unsaturated bond, and at least one unsaturated monomer B, which also forms a polymer chain by dissociation of an unsaturated bond, wherein less than two electron-withdrawing groups are directly appended to said unsaturation, and where said monomer B is other than the unsaturated alicyclic monomer and forms a polymer main chain, in the presence of a free radical initiator. The reacting step is carried out in a stoichiometric excess of monomer A as compared to monomer B. By carrying out the reacting step in an excess of monomer A as compared to monomer B, the resultant copolymer will have a greater molar concentration of monomer A than is obtainable using other methods.
    • 提供了可用作辐射敏感性树脂组合物的组分的共聚物的可扩展和高产率的方法。 所述方法包括使至少一种不饱和脂环族单体的单体A与不饱和键解离形成聚合物主链的至少一种不饱和单体B,其通过不饱和键解离形成聚合物链 键,其中少于两个吸电子基团直接连接到所述不饱和基团上,并且其中所述单体B不同于不饱和脂环族单体并形成聚合物主链,在自由基引发剂存在下。 与单体B相比,反应步骤在化学计量过量的单体A中进行。通过与单体B相比,通过进行过量单体A的反应步骤,所得共聚物将具有比单体A更大的摩尔浓度 可以使用其他方法获得。
    • 5. 发明授权
    • Resist pattern formation method
    • 抗蚀图案形成方法
    • US06403288B1
    • 2002-06-11
    • US09520345
    • 2000-03-07
    • Yukio NishimuraToshiyuki KaiEiichi KobayashiTakeo Shioya
    • Yukio NishimuraToshiyuki KaiEiichi KobayashiTakeo Shioya
    • G03F7039
    • G03F7/30G03F7/0045Y10S430/115
    • A method of forming a resist pattern from a chemically amplified positive radiation sensitive resin composition. The film thickness of an unexposed portion of a resist film formed from the chemically amplified positive radiation sensitive resin composition after wet development is 100 to 400 Å smaller than that before wet development. Alternatively, a resist film formed from the chemically amplified positive radiation sensitive resin composition is wet developed at both a temperature and a time enough to ensure that the film thickness of an unexposed portion of the resist film after wet development is 100 to 400 Å smaller than that before wet development. A resist film which is formed from a chemically amplified positive radiation sensitive resin composition and experiences a 100 to 400 Å reduction in the film thickness of an unexposed portion by wet development is useful as a resist film for forming a resist pattern.
    • 从化学放大正射线敏感性树脂组合物形成抗蚀剂图案的方法。湿法显影后由化学放大的正性辐射敏感性树脂组合物形成的抗蚀剂膜的未曝光部分的膜厚比以前小100至400埃 湿发展。 或者,由化学放大的正性辐射敏感性树脂组合物形成的抗蚀剂膜在足以确保湿显影后抗蚀剂膜的未曝光部分的膜厚度比100至400小的温度和时间都被湿成型 在湿显影之前的抗蚀剂膜是由化学放大的正性辐射敏感性树脂组合物形成的抗蚀剂膜,通过湿显影而经历100〜400的未曝光部分的膜厚度的降低作为形成抗蚀剂图案的抗蚀剂膜是有用的 。