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1. 发明申请

US20080254722A1 PAD CONDITIONER 有权
标题翻译： PAD调节器
公开(公告)号：US20080254722A1
公开(公告)日：2008-10-16
申请号：US11734063
申请日：2007-04-11
申请人： Kun Xu , Jimin Zhang , James C. Wang , Thomas H. Osterheld , Yutao Ma , Steve M. Zuniga , Jin Xi
发明人： Kun Xu , Jimin Zhang , James C. Wang , Thomas H. Osterheld , Yutao Ma , Steve M. Zuniga , Jin Xi
IPC分类号： B24B21/18
CPC分类号： B24B53/017 , B24B29/005 , B24B53/12
摘要： A pad conditioner is provided for conditioning a polishing pad in chemical mechanical planarization (CMP). The pad conditioner comprises a plastic abrasive portion having a first hardness and optionally a brush portion having a second hardness less than the first hardness. The plastic abrasive portion comprises a base plate and a plurality of plastic nodules formed on a surface of the base plate, each of the plastic nodules having a planar top surface, wherein the planar top surface is positioned to substantially contact a polishing pad. The brush portion may be positioned adjacent to the plastic abrasive portion, the brush portion having a plurality of brush elements positioned to substantially contact the pad.
摘要翻译：提供了用于在化学机械平面化（CMP）中调理抛光垫的衬垫调节器。衬垫调节剂包括具有第一硬度的塑料磨料部分和任选地具有小于第一硬度的第二硬度的刷部分。塑料研磨部分包括基板和形成在基板的表面上的多个塑料结节，每个塑料结节具有平坦的顶表面，其中平面顶表面被定位成基本接触抛光垫。刷部分可以定位成与塑料研磨部分相邻，刷部分具有多个刷子元件，其定位成基本上接触焊盘。

2. 发明授权

US07815495B2 Pad conditioner 有权
标题翻译：垫调节剂
公开(公告)号：US07815495B2
公开(公告)日：2010-10-19
申请号：US11734063
申请日：2007-04-11
申请人： Kun Xu , Jimin Zhang , James C. Wang , Thomas H. Osterheld , Yutao Ma , Steven M. Zuniga , Jin Yi
发明人： Kun Xu , Jimin Zhang , James C. Wang , Thomas H. Osterheld , Yutao Ma , Steven M. Zuniga , Jin Yi
IPC分类号： B24B53/12
CPC分类号： B24B53/017 , B24B29/005 , B24B53/12
摘要： A pad conditioner is provided for conditioning a polishing pad in chemical mechanical planarization (CMP). The pad conditioner comprises a plastic abrasive portion having a first hardness and optionally a brush portion having a second hardness less than the first hardness. The plastic abrasive portion comprises a base plate and a plurality of plastic nodules formed on a surface of the base plate, each of the plastic nodules having a planar top surface, wherein the planar top surface is positioned to substantially contact a polishing pad. The brush portion may be positioned adjacent to the plastic abrasive portion, the brush portion having a plurality of brush elements positioned to substantially contact the pad.
摘要翻译：提供了用于在化学机械平面化（CMP）中调理抛光垫的衬垫调节器。衬垫调节剂包括具有第一硬度的塑料磨料部分和任选地具有小于第一硬度的第二硬度的刷部分。塑料研磨部分包括基板和形成在基板的表面上的多个塑料结节，每个塑料结节具有平坦的顶表面，其中平面顶表面被定位成基本接触抛光垫。刷部分可以定位成与塑料研磨部分相邻，刷部分具有多个刷子元件，其定位成基本上接触焊盘。

3. 发明授权

US09005999B2 Temperature control of chemical mechanical polishing 有权
标题翻译：化学机械抛光温度控制
公开(公告)号：US09005999B2
公开(公告)日：2015-04-14
申请号：US13539344
申请日：2012-06-30
申请人： Kun Xu , Jimin Zhang , David H. Mai , Stephen Jew , Shih-Haur Walters Shen , Zhihong Wang , Thomas H. Osterheld , Wen-Chiang Tu , Gary Ka Ho Lam , Tomohiko Kitajima
发明人： Kun Xu , Jimin Zhang , David H. Mai , Stephen Jew , Shih-Haur Walters Shen , Zhihong Wang , Thomas H. Osterheld , Wen-Chiang Tu , Gary Ka Ho Lam , Tomohiko Kitajima
IPC分类号： H01L21/00 , H01L21/302 , H01L21/304
CPC分类号： H01L21/302 , B24B37/015 , H01L21/304
摘要： Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.
摘要翻译：提供半导体衬底的化学机械抛光（CMP）的方法，更具体地说，涉及这种化学机械抛光时的温度控制。一方面，该方法包括在抛光过程中用抛光表面抛光衬底以去除导电材料的一部分，在抛光过程中反复监测抛光表面的温度，并将抛光表面暴露于速率骤冷过程响应于所监测的温度，以便在抛光过程中达到监测温度的目标值。

4. 发明申请

US20100081360A1 USE OF PAD CONDITIONING IN TEMPERATURE CONTROLLED CMP 有权
标题翻译：在温度控制CMP中使用焊盘调节
公开(公告)号：US20100081360A1
公开(公告)日：2010-04-01
申请号：US12240615
申请日：2008-09-29
申请人： Kun Xu , Thomas H. Osterheld , Jimin Zhang , Stephen Jew
发明人： Kun Xu , Thomas H. Osterheld , Jimin Zhang , Stephen Jew
IPC分类号： B24B49/14 , B24B1/00 , B24B49/16
CPC分类号： B24B37/042 , B24B37/015 , B24B49/16
摘要： A method and apparatus for temperature control for a chemical mechanical polishing process is provided. In one embodiment, the method comprises polishing the substrate with a surface of a polishing pad assembly, measuring a real-time temperature of the surface of the polishing pad assembly, determining whether the real-time temperature of the surface of the polishing pad assembly is within a predetermined processing temperature range, and contacting the surface of the polishing pad assembly with a pad conditioner to adjust the temperature of the surface of the polishing pad assembly to fall within the predetermined temperature range.
摘要翻译：提供了一种用于化学机械抛光工艺的温度控制方法和装置。在一个实施例中，该方法包括用抛光垫组件的表面抛光衬底，测量抛光垫组件的表面的实时温度，确定抛光垫组件的表面的实时温度是否为在预定的处理温度范围内，并且将抛光垫组件的表面与衬垫调节器接触，以调节抛光垫组件的表面的温度落在预定温度范围内。

5. 发明申请

US20140004626A1 TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING 有权
标题翻译：化学机械抛光温度控制
公开(公告)号：US20140004626A1
公开(公告)日：2014-01-02
申请号：US13539344
申请日：2012-06-30
申请人： KUN XU , Jimin Zhang , David H. Mai , Stephen Jew , Shih-Haur Walters Shen , Zhihong Wang , Thomas H. Osterheld , Wen-Chiang Tu , Gary Ka Ho Lam , Tomohiko Kitajima
发明人： KUN XU , Jimin Zhang , David H. Mai , Stephen Jew , Shih-Haur Walters Shen , Zhihong Wang , Thomas H. Osterheld , Wen-Chiang Tu , Gary Ka Ho Lam , Tomohiko Kitajima
IPC分类号： H01L21/66
CPC分类号： H01L21/302 , B24B37/015 , H01L21/304
摘要： Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.
摘要翻译：提供半导体衬底的化学机械抛光（CMP）的方法，更具体地说，涉及这种化学机械抛光时的温度控制。一方面，该方法包括在抛光过程中用抛光表面抛光衬底以去除导电材料的一部分，在抛光过程中反复监测抛光表面的温度，并将抛光表面暴露于速率骤冷过程响应于所监测的温度，以便在抛光过程中达到监测温度的目标值。

6. 发明授权

US08292691B2 Use of pad conditioning in temperature controlled CMP 有权
标题翻译：在温度控制CMP中使用焊盘调节
公开(公告)号：US08292691B2
公开(公告)日：2012-10-23
申请号：US12240615
申请日：2008-09-29
申请人： Kun Xu , Thomas H. Osterheld , Jimin Zhang , Stephen Jew
发明人： Kun Xu , Thomas H. Osterheld , Jimin Zhang , Stephen Jew
IPC分类号： B24B49/14
CPC分类号： B24B37/042 , B24B37/015 , B24B49/16
摘要： A method and apparatus for temperature control for a chemical mechanical polishing process is provided. In one embodiment, the method comprises polishing the substrate with a surface of a polishing pad assembly, measuring a real-time temperature of the surface of the polishing pad assembly, determining whether the real-time temperature of the surface of the polishing pad assembly is within a predetermined processing temperature range, and contacting the surface of the polishing pad assembly with a pad conditioner to adjust the temperature of the surface of the polishing pad assembly to fall within the predetermined temperature range.
摘要翻译：提供了一种用于化学机械抛光工艺的温度控制方法和装置。在一个实施例中，该方法包括用抛光垫组件的表面抛光衬底，测量抛光垫组件的表面的实时温度，确定抛光垫组件的表面的实时温度是否为在预定的处理温度范围内，并且将抛光垫组件的表面与衬垫调节器接触，以调节抛光垫组件的表面的温度落在预定温度范围内。

7. 发明申请

US20100279435A1 TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光温度控制
公开(公告)号：US20100279435A1
公开(公告)日：2010-11-04
申请号：US12433559
申请日：2009-04-30
申请人： Kun Xu , Jimin Zhang , Stephen Jew , Thomas H. Osterheld
发明人： Kun Xu , Jimin Zhang , Stephen Jew , Thomas H. Osterheld
IPC分类号： H01L21/66 , C23F1/08
CPC分类号： B24B55/02 , B24B37/015
摘要： A chemical mechanical polishing apparatus including a platen for holding a pad having a polishing surface, a subsystem for holding a substrate and the polishing surface together during a polishing step, and a temperature sensor oriented to measure a temperature of the polishing surface, wherein the subsystem accepts the temperature measured by the sensor and is programmed to vary a polishing process parameter in response to the measured temperature. In an aspect, a chemical mechanical polishing apparatus having a platen for holding a pad having a polishing surface, a fluid delivery system for transporting a fluid from a source to the polishing surface, and a temperature controller which during operation controls the temperature of the fluid transported by the delivery system.
摘要翻译：一种化学机械抛光装置，包括用于在抛光步骤期间将用于保持具有抛光表面的焊盘的垫板，用于保持基板和抛光表面的子系统以及用于测量抛光表面的温度的温度传感器，其中所述子系统接受由传感器测量的温度，并被编程以响应于测量的温度来改变抛光工艺参数。一方面，一种具有用于保持具有抛光表面的焊盘的压板的化学机械抛光装置，用于将流体从源传送到抛光表面的流体输送系统以及在操作期间控制流体温度的温度控制器由运送系统运输。

8. 发明申请

US20100120330A1 ENDPOINT CONTROL OF MULTIPLE-WAFER CHEMICAL MECHANICAL POLISHING 失效
标题翻译：多波长化学机械抛光的端点控制
公开(公告)号：US20100120330A1
公开(公告)日：2010-05-13
申请号：US12267434
申请日：2008-11-07
申请人： Jimin Zhang , Thomas H. Osterheld , Ingemar Carlsson , Boguslaw A. Swedek , Stephen Jew
发明人： Jimin Zhang , Thomas H. Osterheld , Ingemar Carlsson , Boguslaw A. Swedek , Stephen Jew
IPC分类号： B24B49/00
CPC分类号： B24B37/013 , B24B49/12
摘要： A computer-implemented method includes polishing substrates simultaneously in a polishing apparatus. Each substrate has a polishing rate independently controllable by an independently variable polishing parameter. Measurement data that varies with the thickness of each of the substrates is acquired from each of the substrates during polishing with an in-situ monitoring system. A projected thickness that each substrate will have at a target time is determined based on the measurement data. The polishing parameter for at least one substrate is adjusted to adjust the polishing rate of the at least one substrate such that the substrates have closer to the same thickness at the target time than without the adjustment.
摘要翻译：计算机实现的方法包括在抛光装置中同时抛光衬底。每个基底具有通过独立可变抛光参数独立控制的抛光速率。随着每个基板的厚度变化的测量数据在用原位监测系统进行抛光时从每个基板获得。基于测量数据确定每个基板在目标时间具有的投影厚度。调整至少一个基板的抛光参数以调节至少一个基板的抛光速率，使得基板在目标时间比不进行调节更接近相同厚度。

9. 发明授权

US08562389B2 Thin polishing pad with window and molding process 有权
公开(公告)号：US08562389B2
公开(公告)日：2013-10-22
申请号：US12130670
申请日：2008-05-30
申请人： Dominic J. Benvegnu , Jimin Zhang , Thomas H. Osterheld , Boguslaw A. Swedek
发明人： Dominic J. Benvegnu , Jimin Zhang , Thomas H. Osterheld , Boguslaw A. Swedek
IPC分类号： B24B49/00
CPC分类号： B24B37/205 , B24B37/013
摘要： A polishing pad is described that has a polishing layer with a polishing surface, an adhesive layer on a side of the polishing layer opposite the polishing layer, and a solid light-transmitting window extending through and molded to the polishing layer. The window has a top surface coplanar with the polishing surface and a bottom surface coplanar with a lower surface of the adhesive layer. A method of making a polishing pad includes forming an aperture through a polishing layer and an adhesive layer, securing a backing piece to the adhesive layer on a side opposite a polishing surface of the polishing layer, dispensing a liquid polymer into the aperture, and curing the liquid polymer to form a window.

10. 发明申请

US20100120331A1 ENDPOINT CONTROL OF MULTIPLE-WAFER CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：多波长化学机械抛光的端点控制
公开(公告)号：US20100120331A1
公开(公告)日：2010-05-13
申请号：US12267473
申请日：2008-11-07
申请人： Ingemar Carlsson , Boguslaw A. Swedek , Jimin Zhang , Stephen Jew , Thomas H. Osterheld
发明人： Ingemar Carlsson , Boguslaw A. Swedek , Jimin Zhang , Stephen Jew , Thomas H. Osterheld
IPC分类号： B24B49/02 , B24B7/20 , B24B49/12
CPC分类号： B24B37/013 , B24B49/12
摘要： A computer-implemented method includes polishing substrates simultaneously in a polishing apparatus. Each substrate has a polishing rate independently controllable by an independently variable polishing parameter. Measurement data that varies with the thickness of each of the substrates is acquired from each of the substrates during polishing with an in-situ monitoring system. A projected time at which each substrate will reach a target thickness is determined based on the measurement data. The polishing parameter for at least one substrate is adjusted to adjust the polishing rate of the at least one substrate such that the substrates reach the target thickness closer to the same time than without the adjustment.
摘要翻译：计算机实现的方法包括在抛光装置中同时抛光衬底。每个基底具有通过独立可变抛光参数独立控制的抛光速率。随着每个基板的厚度变化的测量数据在用原位监测系统进行抛光时从每个基板获得。基于测量数据确定每个基板将达到目标厚度的预计时间。调整用于至少一个基板的抛光参数以调节至少一个基板的抛光速率，使得基板达到比不进行调整更接近于目标厚度。

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