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1. 发明申请

US20120299015A1 NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR LAYER GROWTH SUBSTRATE 有权
标题翻译：氮化物半导体器件和氮化物半导体层生长衬底
公开(公告)号：US20120299015A1
公开(公告)日：2012-11-29
申请号：US13405985
申请日：2012-02-27
申请人： Koichi TACHIBANA , Hisashi Yoshida , Hiroshi Ono , Hajime Nago , Yoshiyuki Harada , Toshiki Hikosaka , Maki Sugai , Toshiyuki Oka , Shinya Nunoue
发明人： Koichi TACHIBANA , Hisashi Yoshida , Hiroshi Ono , Hajime Nago , Yoshiyuki Harada , Toshiki Hikosaka , Maki Sugai , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/20 , H01L29/04
CPC分类号： H01L33/20 , H01L29/045 , H01L29/2003 , H01L33/16 , H01L33/32
摘要： According to one embodiment, a nitride semiconductor device includes a substrate and a semiconductor functional layer. The substrate is a single crystal. The semiconductor functional layer is provided on a major surface of the substrate and includes a nitride semiconductor. The substrate includes a plurality of structural bodies disposed in the major surface. Each of the plurality of structural bodies is a protrusion provided on the major surface or a recess provided on the major surface. An absolute value of an angle between a nearest direction of an arrangement of the plurality of structural bodies and a nearest direction of a crystal lattice of the substrate in a plane parallel to the major surface is not less than 1 degree and not more than 10 degrees.
摘要翻译：根据一个实施例，氮化物半导体器件包括衬底和半导体功能层。衬底是单晶。半导体功能层设置在基板的主表面上并且包括氮化物半导体。基板包括设置在主表面中的多个结构体。多个结构体中的每一个是设置在主表面上的突起或设置在主表面上的凹部。多个结构体的排列的最近方向与平行于主表面的平面中的基板的晶格的最近方向之间的角度的绝对值不小于1度且不大于10度。

2. 发明申请

US20110204411A1 CRYSTAL GROWTH METHOD AND SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：晶体生长方法和半导体发光器件
公开(公告)号：US20110204411A1
公开(公告)日：2011-08-25
申请号：US12875560
申请日：2010-09-03
申请人： Hajime NAGO , Koichi TACHIBANA , Toshiki HIKOSAKA , Shinya NUNOUE
发明人： Hajime NAGO , Koichi TACHIBANA , Toshiki HIKOSAKA , Shinya NUNOUE
IPC分类号： H01L33/32 , H01L33/30
CPC分类号： H01L33/24 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/20 , H01L33/32
摘要： According to one embodiment, a crystal growth method is disclosed for growing a crystal of a nitride semiconductor on a major surface of a substrate. The major surface is provided with asperities. The method can include depositing a buffer layer on the major surface at a rate of not more than 0.1 micrometers per hour. The buffer layer includes GaxAl1-xN (0.1≦x
摘要翻译：根据一个实施例，公开了用于在衬底的主表面上生长氮化物半导体的晶体的晶体生长方法。主表面配有凹凸。该方法可以包括以不大于0.1微米/小时的速率在主表面上沉积缓冲层。缓冲层包括GaxAl1-xN（0.1＆nlE; x <0.5），并且具有不小于20纳米且不大于50纳米的厚度。此外，该方法可以包括在沉积缓冲层时在高于衬底的温度的温度下在缓冲层上生长包括氮化物半导体的晶体。

3. 发明申请

US20120049155A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120049155A1
公开(公告)日：2012-03-01
申请号：US13030440
申请日：2011-02-18
申请人： Koichi TACHIBANA , Hajime Nago , Toshiki Hikosaka , Shigeya Kimura , Shinya Nunoue
发明人： Koichi TACHIBANA , Hajime Nago , Toshiki Hikosaka , Shigeya Kimura , Shinya Nunoue
IPC分类号： H01L33/04
CPC分类号： H01L33/32 , H01L33/04 , H01L33/06 , H01L33/12
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting part, and a multilayered structural body. The light emitting part is provided between the first and second semiconductor layers and includes barrier layers and well layers alternately stacked. The multilayered structural body is provided between the first semiconductor layer and the light emitting part and includes high energy layers and low energy layers alternately stacked. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the multilayered structural body. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the light emitting part.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，发光部分和多层结构体。发光部分设置在第一和第二半导体层之间，并且包括交替层叠的势垒层和阱层。多层结构体设置在第一半导体层和发光部之间，并且包含交替堆叠的高能层和低能层。第二半导体侧的平均In组成比高于多层结构体中的第一半导体侧的平均In组成比。第二半导体侧的平均In组成比高于发光部中的第一半导体侧的平均In组成比。

4. 发明申请

US20110198633A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20110198633A1
公开(公告)日：2011-08-18
申请号：US12871285
申请日：2010-08-30
申请人： Koichi TACHIBANA , Toshiki Hikosaka , Shigeya Kimura , Hajime Nago , Shinya Nunoue
发明人： Koichi TACHIBANA , Toshiki Hikosaka , Shigeya Kimura , Hajime Nago , Shinya Nunoue
IPC分类号： H01L33/34
CPC分类号： H01L33/06 , H01L33/32 , H01L33/325
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting portion. The light emitting portion is provided between the semiconductor layers and includes barrier layers and well layers alternately stacked. An n-side end well layer which is closest to the n-type semiconductor layer contains InwnGa1-wnN and has a layer thickness twn. An n-side end barrier layer which is closest to the n-type semiconductor layer contains InbnGa1-bnN and has a layer thickness tbn. A p-side end well layer which is closest to the p-type semiconductor layer contains InwpGa1-wpN and has a layer thickness twp. A p-side end barrier layer which is closest to the p-type semiconductor contains InbpGa1-bpN and has a layer thickness tbp. A value of (wp×twp+bp×tbp)/(twp+tbp) is higher than (wn×twn+bn×tbn)/(twn+tbn) and is not higher than 5 times (wn×twn+bn×tbn)/(twn+tbn).
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。发光部分设置在半导体层之间，并且包括交替堆叠的势垒层和阱层。最靠近n型半导体层的n侧端阱层包含InwnGa1-wnN并具有层厚度twn。最靠近n型半导体层的n侧端势垒层包含InbnGa1-bnN并具有层厚度tbn。最靠近p型半导体层的p侧端阱层包含InwpGa1-wpN，并具有层厚度twp。最靠近p型半导体的p侧端势垒层包含InbpGa1-bpN，并具有层厚度tbp。（wp×twp + bp×tbp）/（twp + tbp）的值高于（wn×twn + bn×tbn）/（twn + tbn），并且不高于5次（wn×twn + bn× tbn）/（twn + tbn）。

5. 发明申请

US20120138889A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120138889A1
公开(公告)日：2012-06-07
申请号：US13198105
申请日：2011-08-04
申请人： Koichi TACHIBANA , Hajime Nago , Toshiki Hikosaka , Shigeya Kimura , Shinya Nunoue
发明人： Koichi TACHIBANA , Hajime Nago , Toshiki Hikosaka , Shigeya Kimura , Shinya Nunoue
IPC分类号： H01L33/04
CPC分类号： H01L33/325 , H01L33/02 , H01L33/06 , H01L33/32 , H01L33/40 , H01S5/32341
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting part, and a p-side electrode. The light emitting part is provided between the n-type and the p-type semiconductor layers, and includes a plurality of barrier layers and a plurality of well layers. The p-side electrode contacts the p-type semiconductor layer. The p-type semiconductor layer includes first, second, third, and fourth p-type layers. The first p-type layer contacts the p-side electrode. The second p-type layer contacts the light emitting part. The third p-type layer is provided between the first p-type layer and the second p-type layer. The fourth p-type layer is provided between the second p-type layer and the third p-type layer. The second p-type layer contains Al and contains a p-type impurity in a lower concentration lower than that in the first concentration.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，发光部分和p侧电极。发光部分设置在n型和p型半导体层之间，并且包括多个势垒层和多个阱层。 p侧电极与p型半导体层接触。 p型半导体层包括第一，第二，第三和第四p型层。第一p型层与p侧电极接触。第二p型层与发光部接触。第三p型层设置在第一p型层和第二p型层之间。第四p型层设置在第二p型层和第三p型层之间。第二p型层含有Al并含有比第一浓度低的浓度的p型杂质。

6. 发明申请

US20110198561A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20110198561A1
公开(公告)日：2011-08-18
申请号：US12874510
申请日：2010-09-02
申请人： Koichi TACHIBANA , Hajime Nago , Toshiki Hikosaka , Shigeya Kimura , Shinya Nunoue
发明人： Koichi TACHIBANA , Hajime Nago , Toshiki Hikosaka , Shigeya Kimura , Shinya Nunoue
IPC分类号： H01L33/32
CPC分类号： H01L33/145 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting portion, a first layer, a second layer, and an intermediate layer. The semiconductor layers include nitride semiconductor. The light emitting portion is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a quantum well layer. The first layer is provided between the light emitting portion and the p-type semiconductor layer and includes AlX1Ga1-x1N having first Al composition ratio x1. The second layer is provided between the first layer and the p-type semiconductor layer and includes Alx2Ga1-x2N having second Al composition ratio x2 higher than the first Al composition ratio x1. The intermediate layer is provided between the first layer and the light emitting portion and has a thickness not smaller than 3 nanometers and not larger than 8 nanometers and includes Inz1Ga1-z1N (0≦z1
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，发光部分，第一层，第二层和中间层。半导体层包括氮化物半导体。发光部分设置在n型半导体层和p型半导体层之间，并且包括量子阱层。第一层设置在发光部和p型半导体层之间，并且包括具有第一Al组成比x1的AlX1Ga1-x1N。第二层设置在第一层和p型半导体层之间，并且包括具有比第一Al组成比x1高的第二Al组成比x2的Al x2 Ga1-x2N。中间层设置在第一层和发光部之间，并且具有不小于3纳米且不大于8纳米的厚度，并且包括Inz1Ga1-z1N（0＆nlE; z1 <1）。

7. 发明申请

US20110037049A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：氮化物半导体发光器件
公开(公告)号：US20110037049A1
公开(公告)日：2011-02-17
申请号：US12717653
申请日：2010-03-04
申请人： Koichi TACHIBANA , Hajime Nago , Toshiki Hikosaka , Shinya Nunoue
发明人： Koichi TACHIBANA , Hajime Nago , Toshiki Hikosaka , Shinya Nunoue
IPC分类号： H01L33/04 , H01L33/30
CPC分类号： H01L33/32 , H01L33/06
摘要： Disclosed is a nitride semiconductor light-emitting device including a substrate, a pair of p-type and n-type clad layers formed on the substrate, and an active layer having a single quantum well structure or a multiple quantum well structure, which is sandwiched between the p-type clad layer and the n-type clad layer, and includes a quantum well layer and a pair of barrier layers each having a larger bandgap than that of the quantum well layer, the quantum well layer being sandwiched between the pair of barrier layers. Each of the pair of barrier layers has a multi-layer structure including, starting from the quantum well layer side, a first subbarrier layer having a composition of Iny1Ga1-y1N, a second subbarrier layer having a composition of Iny2Ga1-y2N and a third subbarrier layer having a composition of Iny3Ga1-y3N, in which y1, y2 and y3 satisfy the relationship of 0≦y1,y3
摘要翻译：公开了一种氮化物半导体发光器件，其包括衬底，形成在衬底上的一对p型和n型覆盖层以及具有单量子阱结构或多量子阱结构的有源层，其夹在在p型覆盖层和n型覆盖层之间，包括量子阱层和一对阻挡层，每个阻挡层的带隙比量子阱层的带隙大，量子阱层夹在一对阻挡层。所述一对势垒层中的每一个具有多层结构，包括从量子阱层侧开始具有In y Ga 1-y N N的组成的第一子屏蔽层，具有In y Ga 1-y N N的组成的第二子隔离层和第三子阱 y1，y2和y3满足0＆nlE; y1，y3

8. 发明申请

US20120286284A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER 有权
标题翻译：半导体发光器件和散热器
公开(公告)号：US20120286284A1
公开(公告)日：2012-11-15
申请号：US13206700
申请日：2011-08-10
申请人： Koichi TACHIBANA , Shigeya Kimura , Hajime Nago , Shinya Nunoue
发明人： Koichi TACHIBANA , Shigeya Kimura , Hajime Nago , Shinya Nunoue
IPC分类号： H01L33/32
CPC分类号： H01L33/12 , B82Y20/00 , H01L33/007 , H01L33/025 , H01L33/06 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/32 , H01S5/3407 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12
摘要： According to one embodiment, a semiconductor light emitting device includes: a foundation layer, a first semiconductor layer, a light emitting part, and a second semiconductor layer. The foundation layer includes a nitride semiconductor. The foundation layer has a dislocation density not more than 5×108 cm−2. The first semiconductor layer of a first conductivity type is provided on the foundation layer and includes a nitride semiconductor. The light emitting part is provided on the first semiconductor layer. The light emitting part includes: a plurality of barrier layers; and a well layer provided between the barrier layers. The well layer has a bandgap energy smaller than a bandgap energy of the barrier layers and has a thickness larger than a thickness of the barrier layers. The second semiconductor layer of a second conductivity type different from the first conductivity type, is provided on the light emitting part and includes a nitride semiconductor.
摘要翻译：根据一个实施例，半导体发光器件包括：基底层，第一半导体层，发光部分和第二半导体层。基础层包括氮化物半导体。基础层的位错密度不大于5×108cm-2。第一导电类型的第一半导体层设置在基底层上并且包括氮化物半导体。发光部分设置在第一半导体层上。发光部包括：多个阻挡层; 以及设置在阻挡层之间的阱层。阱层具有小于阻挡层的带隙能量的带隙能量，并且具有比阻挡层的厚度大的厚度。具有不同于第一导电类型的第二导电类型的第二半导体层设置在发光部分上并且包括氮化物半导体。

9. 发明申请

US20120138896A1 SEMICONDUCTOR DEVICE 失效
公开(公告)号：US20120138896A1
公开(公告)日：2012-06-07
申请号：US13398239
申请日：2012-02-16
申请人： Koichi TACHIBANA , Chie HONGO , Hajime NAGO , Shinya NUNOUE
发明人： Koichi TACHIBANA , Chie HONGO , Hajime NAGO , Shinya NUNOUE
IPC分类号： H01L33/04
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/02 , H01L33/305 , H01S5/2009 , H01S5/22 , H01S5/2224 , H01S5/3063 , H01S5/3072 , H01S5/3216 , H01S5/34333 , H01S2304/04 , Y10S257/918
摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

10. 发明申请

US20120138895A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120138895A1
公开(公告)日：2012-06-07
申请号：US13398170
申请日：2012-02-16
申请人： Koichi TACHIBANA , Chie Hongo , Hajime Nago , Shinya Nunoue
发明人： Koichi TACHIBANA , Chie Hongo , Hajime Nago , Shinya Nunoue
IPC分类号： H01L33/04
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/02 , H01L33/305 , H01S5/2009 , H01S5/22 , H01S5/2224 , H01S5/3063 , H01S5/3072 , H01S5/3216 , H01S5/34333 , H01S2304/04 , Y10S257/918
摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.
摘要翻译：半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出，第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

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